ACS Applied Electronic Materials
·
2026
·
IF 4.7
Qinghu Guo,Ting Wang,Mengchen Yao,Shangshu Li,Yiren Liu,Weiping Gong,Hua Hao
The demand for advanced microwave dielectric ceramics for 5G base station filters drives the need for materials combining moderate permittivity, high quality factor (Q × f), and near-zero temperature stability (τf). This work investigates Ga2O3-doped SrTiO3–NdAlO3 (ST-NA) ceramics. The optimal base composition (0.5ST-0.5NA) achieves εr = 40.2, Q × f = 12,729 GHz, τf = 5.89 ppm/°C. To further enhance the microwave dielectric performance, Ga2O3 doping was introduced into the ST-NA ceramics. The substitution of Ga3+ for Ti4+ not only induces associated oxygen vacancy formation but also effectively suppressed the reduction of Ti4+ to Ti3+ during sintering, thereby reducing conduction loss, while the dielectric constant remained relatively stable. Consequently, 1.5% Ga2O3-doped ST-NA ceramic exhibited excellent overall microwave dielectric properties, with εr = 40.7, Q × f = 21,441 GHz, τf = 1.78 ppm/°C. These results demonstrate that Ga2O3-doped ST-NA ceramics are promising candidates for temperature-stable, low-loss microwave components in 5G and other high-frequency communication systems.
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Materials Today Physics
·
2022
·
IF 11.021
C. Wu,F. Wu,C. Ma,S. Li,A. Liu,X. Yang,Y. Chen,J. Wang,D. Guo
Ga 2 O 3 based self-powered photodetectors , which can work in photovoltaic mode, show great potential applications in the next-generation photodetectors. Due to the difficulty of p-type doping of Ga 2 O 3 , constructing heterojunctions is a promising alternative for self-powered Ga 2 O 3 photodetectors. Although several inorganic materials have been focused on fabricating Ga 2 O 3 based heterojunction, some disadvantages prevent them from being widely used, such as the large lattice mismatch , the unsuitable bandgap, the inflexibility, the complex preparation process, etc. In this study, a general strategy has been proposed for high-performance photodetectors through building a type-Ⅱ Ga 2 O 3 heterojunction with the small-molecule hole transport materials (SMHTMs). The relatively large hole mobility of SMHTMs guarantees the high-speed transport of the photogenerated holes, and the solar-blind filter effect of the SMHTMs films makes the photodetector highly spectrum selective. Herein, four types of SMHTMs have been used to constructed photodetectors with Ga 2 O 3 , and all of them exhibit self-powered characteristics with I on / I off ratios of about>10 5 , which is 1–2 orders of magnitude larger than these previously reported Ga 2 O 3 photodetectors. Among them, the photodetector based on β -Ga 2 O 3 /TAPC heterojunction shows the best photoelectrical performances with a dark current of about 20 fA, a I on / I off ratio of 5.9 × 10 5 , and a detectivity of 1.02 × 10 13 Jones at 0 V, all of which are amongst the best values ever reported for Ga 2 O 3 based self-powered photodetectors. The high-speed transport of the photogenerated holes and large built-in field in the β -Ga 2 O 3 /SMHTMs heterojunctions should be responsible for these remarkable performances. This work provides a feasible strategy to high-performance Ga 2 O 3 based self-powered photodetectors, thus may push forward their applications.
研究领域:
光电子学
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材料科学
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半导体器件
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光子学
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JOURNAL OF NON-CRYSTALLINE SOLIDS
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2026
·
IF 3.6
Zhitao Shan,Hong Wang,Shujiang Liu,Yanfei Zhang,Cheng Zuo,Qiuju Zheng,Haizheng Tao,Yuanzheng Yue
In this work, we investigated the structural and physical property evolutions induced by the substitution of Al 2 O 3 by Ga 2 O 3 in two series of CaO-Al 2 O 3 -Ga 2 O 3 (CAG) glasses. To suppress crystallization, glasses with compositions of (I) 50CaO• (50- x )Al 2 O 3 • x Ga 2 O 3 ( x = 0–50 mol%) and (II) 63CaO• (37- x )Al 2 O 3 • x Ga 2 O 3 ( x = 0–37 mol%) were prepared via containerless aerodynamic levitation technique. It was found that with increasing substitution of Al 2 O 3 by Ga 2 O 3 (i.e., increasing x ), both glass series exhibited monotonic decreases in hardness, glass transition temperature and thermal expansion coefficient. High-resolution XPS analyses revealed that the two glass series exhibited distinct compositional dependences in their local structural evolution. Specifically, in series I ([CaO]:[Al 2 O 3 +Ga 2 O 3 ] = 1:1), the coordination environments of O, Ga, and Al remained largely unchanged upon substitution. In contrast, Series II ([CaO]:[Al 2 O 3 +Ga 2 O 3 ] = 12:7) exhibited significant shifts in O and Al coordination, while the Ga environment was only minimally affected. Furthermore, XPS indicated that trace OH - species preferentially interact with Al/Ga-O bonds by non-bridging oxygens within [AlO 4 ] or [GaO 4 ] tetrahedra. These findings elucidate the critical roles of both [CaO]/[Al 2 O 3 +Ga 2 O 3 ] and [Al 2 O 3 ]/[Al 2 O 3 +Ga 2 O 3 ] ratios in tailoring the structure - property relationships of CAG glasses.
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Nanomaterials
·
2025
·Vol. 15
·期 5
·402
·
IF 4.3
Lingfeng Mao,Xiaoxuan Wang,Chaoyang Huang,Yi Ma,Feifei Qin,Wendong Lu,Gangyi Zhu,Zengliang Shi,Qiannan Cui,Chunxiang Xu
Gallium oxide (Ga2O3), an ultrawide bandgap semiconductor, is an ideal material for solar-blind photodetectors, but challenges such as low responsivity and response speed persist. In this paper, one-dimensional (1D) Ga2O3nanorods were designed to achieve high photodetection performance due to their effective light absorption and light field confinement. Through modulating source concentration, pH value, temperature, and reaction time, 1D β-Ga2O3nanorods were controllably fabricated using a cost-effective hydrothermal method, followed by post-annealing. The nanorods had a diameter of ~500 nm, length from 0.5 to 3 μm, and structure from nanorods to spindles, indicating that different β-Ga2O3nanorods can be utilized controllably through tuning reaction parameters. The 1D β-Ga2O3nanorods with a high length-to-diameter ratio were chosen to construct metal-semiconductor-metal type photodetectors. These devices exhibited a high responsivity of 8.0 × 10−4A/W and detectivity of 4.58 × 109Jones under 254 nm light irradiation. The findings highlighted the potential of 1D Ga2O3nanostructures for high-performance solar-blind ultraviolet photodetectors, paving the way for future integrable deep ultraviolet optoelectronic devices.
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Journal of Environmental Sciences
·
2012
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IF 1.66
Baoxiu Zhao,Mou Lv,Li Zhou
Perfluorooctanoic acid (PFOA) is a new-found hazardous persistent organic pollutant, and it is resistant to decomposition by hydroxyl radical (HO) due to its stable chemical structure and the high electronegativity of fluorine. Photocatalytic reduction of PFOA with β-Ga 2 O 3 in anoxic aqueous solution was investigated for the first time, and the results showed that the photoinduced electron (e − cb ) coming from the β-Ga 2 O 3 conduction band was the major degradation substance for PFOA, and shorter-chain perfluorinated carboxylic acids (PFCAs, C n F 2n+1 COOH, 1 ≤ n ≤ 6) were the dominant products. Furthermore, the concentration of F − was measured by the IC technique and defluorination efficiency was calculated. After 3 hr, the photocatalytic degradation efficiency was 98.8% and defluorination efficiency was 31.6% in the presence of thiosulfate and bubbling N 2 . The degradation reaction followed first-order kinetics ( k = 0.0239 min −1 , t 1/2 = 0.48 hr). PFCAs (C n F 2n+1 COOH, 1 ≤ n ≤ 7) were detected and measured by LC-MS and LC-MS/MS methods. It was deduced that the probable photocatalytic degradation mechanism involves e − cb attacking the carboxyl of C n F 2n + 1 COOH, resulting in decarboxylation and the generation of C n F 2n + 1 . The produced C n F 2n + 1 reacted with H 2 O, forming C n F 2n + 1 OH, then C n F 2n + 1 OH underwent HF loss and hydrolysis to form C n F 2n+1 COOH.
研究领域:
环境科学
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材料科学
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Science China-Chemistry
·
2014
·Vol. 58
·期 3
·532-538
·
IF 1.516
Chai XiaoHui,Liu ZhiHong,Huang YingPing
Three different nanorod-like gallium oxides with mono/poly-crystalline nature (α, β, and α/β-Ga 2 O 3 ) were prepared by regulating the amount of polyethylene glycol (PEG) 6000 in the range of 0.2–0.8 g proportionally via a hydrothermal method combined with further calcination. The bandgap of the products, given by UV-Vis diffuse reflectance spectra (UV-Vis DRS), was in the order of α-Ga 2 O 3 > α/β-Ga 2 O 3 > β-Ga 2 O 3 . To further investigate the photocatalysis performance of the catalysts, the decomposition of rhodamine B (RhB) by Ga 2 O 3 under UV light illumination ( λ < 387 nm) was presented and complete degradation could be achieved within 30 min, a result that showed the highest efficiency. The photocatalytic oxidation mechanism is further discussed and prominently related to the active species: hydroxyl radical (·OH) and superoxide radical (O 2
· − ), which were confirmed by electron paramagnetic resonance (EPR).
研究领域:
材料科学
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环境科学
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Materials Horizons
·
2024
·
IF 12.2
Geng Chen,Tao Zhang,Limin Zhang,Kai Tao,Qiang Chen,Hongjing Wu
Interface engineering, by modulating defect distribution and impedance at interfaces and inducing interfacial polarization, has proven to be an effective strategy for optimizing dielectric properties. However, the inherent incompatibility between heterogeneous phases presents a significant challenge in constructing multi-heterointerfaces and understanding how their distribution influences dielectric performance. Herein, we constructed an EGaIn@Ni/NiO/Ga2O3 composite structure by employing a low-intensity ultrasound-assisted galvanic replacement reaction followed by high-temperature annealing. The controlled addition of Ni salts allowed for the fine-tuning of Ni, NiO, and In concentrations and their spatial distribution within the interfacial architecture. Annealing treatment induced a transition from amorphous to crystalline phases, triggering dual relaxation behaviors between EGaIn/Ni and NiO/Ga2O3. Additionally, significant charge accumulation was observed at the NiO/Ga2O3 interface, likely due to the substantial work function difference between Ni and NiO, coupled with the low barrier height between EGaIn and Ni, which facilitates electron migration. Consequently, the optimized samples exhibited a maximum absorption bandwidth of 7.92 GHz, which is the highest among the EGaIn-based absorbers reported in the literature. This work not only elucidates the mechanism by which multi-heterogeneous interfacial distributions regulate the dielectric properties but also provides an effective approach for modulating the electromagnetic wave performance of liquid metals.
研究领域:
材料科学
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电子工程
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ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Yijie Wen,Shuai Hu,Chao Lin,Xin Guo,Jinshu Huang,Maohui Yuan,Kai Han
As an emerging ultrawide bandgap semiconductor, Ga2O3 nanoparticles (NPs) have garnered significant attention across various fields due to their high thermal and chemical stability. Conventional synthesis methods for Ga2O3 NPs, such as high-temperature solid-state reactions and hydrothermal processes, encounter challenges including complex procedures, limited scalability, and production of large particle sizes. In this study, we develop a straightforward approach to synthesize phase-pure, nanosized Ga2O3 NPs through flame spray pyrolysis, followed by an annealing treatment. By the incorporation of trivalent chromium ions (Cr3+) into the Ga2O3 NPs, it achieves intensive near-infrared (NIR) luminescence, specifically the R lines associated with the 4T2 → 4A2 and 2E → 4A2 transitions. These R lines are sensitive to cryogenic temperatures due to their relatively small energy difference. The synthesized Ga2O3 NPs demonstrate excellent ratiometric thermometric performance within the temperature range of 83–213 K, achieving a maximum relative sensitivity of 3.35% K–1 at 83 K based on the Boltzmann distribution of the luminescent thermometer. Furthermore, an efficient NIR phosphor-converted LED (pc-LED) device is fabricated by employing Cr3+-doped Ga2O3 NPs, which are excited by using a blue LED chip. This NIR pc-LED is subsequently applied in night vision illumination and anticounterfeiting detection.
研究领域:
材料科学
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纳米技术
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光学传感器
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半导体物理
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光子学
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Journal of Physical Chemistry Letters
·
2022
·
IF 6.888
Yu Pei,Lingyan Liang,Xiaolong Wang,Zhenhua Wang,Hengbo Zhang,Junyan Ren,Hongtao Cao
Crystalline Ga2O3 (c-Ga2O3) is a promising candidate for next-generation solar-blind photodetectors (SBPDs) but is suffering from high processing temperatures. Herein, seed-induced engineering is proposed via adopting Zn as an induced metal for crystallizing Ga2O3, lowering the processing temperature by 200 °C. After annealing, the Zn/Ga2O3 consists of an inner Ga2O3 layer of a monoclinic crystalline phase, top ZnO crystals coming from Zn oxidation, and a thin corundum Ga2O3 layer between them, which implies a “seed-induced” crystallization mechanism besides the nonequilibrium chaotic state caused by the traditional electron transfer one. As a result, the tailored c-Ga2O3 thin-film transistor-type SBPD with enhanced packing density and finite oxygen deficiency demonstrates a satisfactory responsivity of 8.6 A/W and also an ultrahigh UVC/visible rejection ratio (R254/R450) of 2 × 105. The seed-induced engineering forecasts its potential application in crystalline Ga2O3 SBPDs under a relatively low processing temperature.
研究领域:
材料科学
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光电子学
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半导体器件
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薄膜技术
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高影响因子
LANGMUIR
·
2025
·
IF 3.9
Mingxin Ren,Jizhou Yang,Zhiyuan Chen,Zhi Wan,Peilin Zuo,Zhenghang Tian,Zhigang Liu,Feng Teng,Peng Hu,Haibo Fan
Tetracycline antibiotic contaminants have attracted more and more attention due to their high toxicity and the difficulty of their natural decomposition. Here, we have successfully regulated the morphologies of Ga2O3 photocatalysts (Ga2O3 QDs, Ga2O3 hollow spheres, and Ga2O3 micrometer rods) through a simple solvothermal and hydrothermal method and investigated their photocatalytic degradation of tetracycline hydrochloride (TC-HCl). It was found that Ga2O3 QDs showed the best photocatalytic performance due to their large specific surface area (61.1838 m2 g–1), wide bandgap (4.62 eV), etc. After the preparation conditions had been optimized, the Ga2O3 QDs synthesized at 240 °C and 10 h exhibited the best performance in degrading TC-HCl; after 500 W xenon lamp irradiation for 20 min, the degradation efficiency can reach 99% and the degradation rate reached 0.2988 min–1. By trapping experiments, the main active substances in the degradation of TC-HCl by Ga2O3 were identified as a superoxide radical (•O2) and a hole (h+). This study provides a new idea of catalyst morphology regulation and a new method for efficient photocatalytic degradation of TC-HCl.
研究领域:
环境化学
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材料科学
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光催化
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纳米技术
·
污染物降解
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高影响因子
ChemSusChem
·
2024
·
IF 7.5
Tong Xu,Tao Shan,Yuting Jiang,Lian-hua Xu,Huiyan Zhang,Sheng Chu
Graphical Utilizing solar energy to upcycling plastic waste into value-added chemicals is a promising strategy for realizing sustainable development. In this study, an efficient photocatalytic conversion of polyethylene plastic into syngas (CO+H 2 mixtures) by using a ZnS/Ga 2 O 3 Z-scheme heterojunction photocatalyst is reported. The strategy provides a green approach to effectively mitigate plastic pollution under environmentally friendly conditions. The photocatalytic conversion of plastic waste into value-added products using solar energy presents a promising approach for promoting environmental sustainability. Nonetheless, the emission of CO 2 during the conventional photocatalytic degradation process remains a major hurdle that impedes its further development. In this study, we propose an efficient photocatalytic conversion of polyethylene plastic into syngas (CO+H 2 mixtures) by using a ZnS/Ga 2 O 3 Z-scheme heterojunction photocatalyst. It is found that the strong redox capability of photogenerated holes and electrons in the Z-scheme heterojunction photocatalyst can promote the oxidative depolymerization of PE plastic, concurrently enabling the efficient reduction of the intermediate product CO 2 into syngas. Furthermore, this system also demonstrates applicability in the conversion and upcycling of other polyolefin plastics including polypropylene and polyvinyl chloride. Our findings highlight the potential of polyolefin plastics photoreforming for the production of syngas under environmentally benign conditions.
研究领域:
环境科学
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材料科学
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Materials
·
2026
·Vol. 19
·期 11
·2417
·
IF 3.7
Boyang Chen,Xinyu Liu,Yiyuan Liu,Zeliang Gao,Zhitai Jia,Wenxiang Mu
HighlightsFor the first time, a high-quality Ti3+-dopedβ-Ga2O3single crystal was successfully grown via the EFG method.The photoelectric properties ofβ-Ga2O3were effectively modulated via Ti3+doping, achieving a moderate semi-insulating state and a reduced bandgap.Ti3+-dopedβ-Ga2O3crystal was fabricated into X-ray detectors with a metal–semiconductor–metal (MSM) structure, demonstrating superior detection performance.Gallium oxide (Ga2O3) is emerging as a promising material for X-ray detectors due to its high sensitivity, high melting point, and stable physicochemical properties. However, intrinsic background shallow donors in raw materials hinder the preparation of high-resistance intrinsic crystals, making doping essential to tailor electrical properties. This study grew Ti3+-dopedβ-Ga2O3single crystals via the Edge-defined Film-fed Growth (EFG) method using Ti2O3as a dopant, achieving high resistivity and a moderate reduction in bandgap. High-resolution X-ray diffraction (HRXRD) showed a rocking curve full width at half maximum (FWHM) of 96.50 arcsec. Compared with the unintentionally doped (UID) crystal, the bandgap exhibited a slight reduction, decreasing from 4.76 eV to 4.59 eV. In the infrared transmission spectra, the onset wavelength of the decrease in transmittance for the Ti3+:β-Ga2O3crystal showed a distinct redshift relative to that of the UID crystal, indicating effective suppression of free electrons within the crystal. X-ray photoelectron spectroscopy (XPS) revealed that Ti3+incorporation minimally affected the valence states of Ga and O or the Ga/O ratio, with no significant shift in valence band maximum (EVBM). A metal–semiconductor–metal (MSM) structured X-ray detector fabricated on polished Ti3+:β-Ga2O3(100) substrate with Ti/Au electrodes exhibited a peak sensitivity of 943.16 μC/(Gy·cm2) at 40 V bias and 2.944 μGy/s dose rate, surpassing the upper sensitivity limit reported for semi-insulating doping bulkβ-Ga2O3detectors. The rise and fall times were 0.23 s and 0.30 s, respectively, with a minimum detectable limit (MDL) of 164.26 nGy/s, demonstrating its potential for high-performance X-ray detection applications.
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