INORGANIC CHEMISTRY
·
2025
·
IF 4.7
Jin-Zhao Huang,Meng-Xin Li,Kai-Zheng Song,Wan-Ying Yao,Feng-Lei Jiang
InP quantum dots (QDs) show a unique promise for display and lighting applications. However, the synthesis of InP QDs with high optical quality is much more difficult compared to that of Cd-based QDs and Pb-based perovskites. Here, we established a layer-by-layer modification approach to improve the optical properties of the InP QDs. InP QDs with green emission were prepared using tris(dimethylamino)phosphine ((DMA)3P). By introducing aluminum isopropoxide (AIP) twice during the formation of the ZnSeS and ZnS shell layers, we increased the photoluminescence quantum yield (PLQY) of the resulting Al-modified InP/ZnSeS/ZnS QDs to 96%. The full-width-at-half-maximum (fwhm) could be narrowed to 37 nm. It was speculated that the introduction of Al could alleviate the charge mismatch between the cores and shells and passivate surface defects. In addition, AIP might form oxides on the outer layers of QDs, thus enhancing their stability. Moreover, the green light-emitting diode (LED) based on Al-modified InP/ZnSeS/ZnS QDs performed well with a maximum power efficiency of 28 lm/W. This work finds a way to obtain InP QDs of high brightness and narrow emission by modification in the midsynthetic process, which will inspire the synthesis of better InP QDs.
研究领域:
材料科学
·
光学工程
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产品关联
DOI
PubMed
高影响因子
FOOD CHEMISTRY
·
2021
·
IF 7.514
Yanbo Wang,Junjie Ma,Huan Li,Jinru Zhou,Hong Zhang,Linglin Fu
Arginine kinase (AK) is one of the most important allergens in shrimp products. Herein, a novel immunoassay for quantitation of AK was developed using the antibody modified gold nanoparticle (AuNP) and quantum dot (QD). When the first antibody modified AuNP (AuNP-Ab1) was bridged by AK with the secondary antibody modified QD (QD-Ab2), fluorescence resonance energy transfer (FRET) would occur between the AuNP and QD, which led to a decrease in fluorescent signals. The decrease in fluorescence intensity was found to correlate linearly with the log of AK concentration in the range of 1.0 × 10 -6 -1.0 × 10 -3 mg/mL (R 2 = 0.9909) and the detection limit was 0.11 ng/mL. The immunoassay was further proved to have encouraging specificity, precision and accuracy. Compared with existing methods, this study provided a promising approach to develop a highly sensitive and selective detection method for AK in shrimp related food samples.
研究领域:
分析化学
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纳米技术
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食品科学
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免疫学
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产品关联
DOI
PubMed
高影响因子
Nanoscale
·
2023
·Vol. 15
·期 6
·2837-2842
·
IF 6.7
Lufa Li,Yaning Luo,Qianqian Wu,Lin Wang,Guohua Jia,Tao Chen,Chengxi Zhang,Xuyong Yang
The interfacial state between the hole transport layer (HTL) and quantum dots (QDs) plays a crucial role in the optoelectronic performance of light-emitting diodes. Herein, we reported an efficient and bright green indium phosphide (InP) QD-based light-emitting diode (LED) by introducing a self-assembled monolayer of 4-bromo-2-fluorothiophenol (SAM-BFTP) molecule to improve interfacial charge transport in LED devices. The molecular dipole layer at the interface of the QD layer and HTL not only reduces the energy barrier of holes injected into QDs through vacuum energy level shift but also inhibits the fluorescence quenching of QDs caused by the HTL. Moreover, copper ions doped into phosphomolybdic acid (Cu:PMA) is selected as the hole injection layer (HIL) into the device system based on the SAM-BFTP molecule, and as a result, a green InP QD LED (QLED) with a maximum external quantum efficiency (EQE) of 8.46% and a luminance of 18 356 cd m−2 was realized. This work can inform and underpin the future development of InP-based QLEDs with concurrent high efficiency and brightness.
研究领域:
材料科学
·
光学工程
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DOI
PubMed
高影响因子
Advanced Optical Materials
·
2026
·Vol. 14
·期 34
·e71656
·
IF 7.2
Ke Wang,Ziyang Zhao,Aidi Zhang,Jicun Ren
InP quantum dots (QDs) are promising for next-generation displays due to their superior color purity, high quantum yield, tunable emission, and non-toxicity. However, their practical application is limited by instability under heat, oxygen, and intense illumination. To address this critical issue of stability, we proposed a dual-layer encapsulation strategy. Firstly, InP/ZnSe/ZnS QDs are synthesized via a “one-pot” approach. Then, mZIF-8@QDs materials are prepared by embedding QDs into a mesoporous zeolite imidazolate framework (mZIF) formed after pore structure modification and surface modification. Finally, a novel vacuum-assisted deposition method is employed to uniformly polymerize polymethyl methacrylate (PMMA) on the surface of mZIF-8@QDs, thereby achieving a secondary coating and obtaining the mZIF-8@QDs@PMMA composite material. The QDs loading capacity was significantly enhanced by modification of the saturated fatty acid for mesoZIF-8. The synthesized fluorescent composite material exhibits high quantum yield, long fluorescence lifetime, good photostability and thermostability. Furthermore, this composite material is used as a color conversion layer in liquid crystal displays (LCDs). The experimental results indicate that the composite material has exceptional durability, and retains over 95% of its initial luminance after 1000 h of accelerated aging under continuous high-temperature and high-intensity blue light irradiation.
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DOI
高影响因子
Small
·
2024
·
IF 13
Guohua Mi,Yisen Yao,Li Xia,Hongyang Zhao,Qian Yang,Zhiming M. Wang,Xin Tong
Colloidal InP/ZnSeS-based quantum dots (QDs) are considered promising building blocks for light-emitting devices due to their environmental friendliness, high quantum yield (QY), and narrow emission. However, the intrinsic type-I band structure severely hinders potential photoelectrochemical (PEC) applications requiring efficient photoexcited carrier separation and transfer. In this study, the optoelectronic properties of InP/ZnSeS QDs are tailored by introducing Al dopants in the ZnSeS layer, which concurrently passivate the surface defects and act as shallow donor states for suppressed non-radiative recombination and improved charge extraction efficiency. Consequently, as-fabricated InP/ZnSeS:Al QDs-based PEC-type photodetector exhibited a high detectivity up to 10 11 Jones and a remarkable responsivity of 0.66 A W −1 at 600 nm even under self-powered condition (0V bias). In addition, as-prepared InP/ZnSeS:Al QDs-based photoanode can be alternatively used for PEC hydrogen generation, showing an H 2 production rate of 73.7 µmol cm −2 h −1 under 1 sun illumination (AM 1.5G, 100 mW cm −2 ). The results offer a prospective strategy for optimizing eco-friendly QDs for high-performance multifunctional light detection/conversion devices.
研究领域:
材料科学
·
能源科学
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产品关联
DOI
PubMed
高影响因子
TOPICS IN CATALYSIS
·
2026
·
IF 3.7
Wu Jundao,Huang Zeai,Zhang Fan,Liu Jiayi,He Yi,Hu Wei,Tang Xiao,Zairov Rustem,Sinyashin Oleg G.
The substantial presence of nitrogen oxides (NO and NO 2 ) in outdoor environments detrimentally impacts natural ecosystems and exerts significant influence on urban climates. Conventional NO x treatment methods frequently suffer from challenges such as harsh reaction conditions and high energy consumption. Consequently, the development of advanced photocatalytic systems to efficiently degrade NO x while minimizing the formation of toxic byproducts represents a critical challenge in environmental catalysis. In this study, a novel ternary composite material (5% Mo-CN/InP-NBOC) was constructed via hydrothermal synthesis and surface modification strategies, achieving 42% NO oxidation efficiency under visible light irradiation with a mere 0.9% NO 2 generation rate. This performance demonstrates efficient photocatalytic NO oxidation while effectively suppressing NO 2 production. Systematic characterization techniques, including XRD, TEM, and XPS, confirmed the successful integration of InP quantum dots (5–10 nm) and amorphous Mo-CN onto NBOC nanosheets, forming an intimate heterojunction structure. PL and ESR analyses revealed that Mo-CN enhances charge carrier separation and governs the NO oxidation process through the activation of dual free radical pathways (⋅O 2 − and ⋅OH). This work establishes a “quantum dot-primary catalyst-cocatalyst” ternary collaborative design paradigm, providing experimental evidence and theoretical models to address the challenges of synergistic optimization among activity, selectivity, and stability in photocatalytic NO x treatment.
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Kai-Zheng Song,Jin-Zhao Huang,Meng-Xin Li,Feng-Lei Jiang
High-performance, environmentally friendly indium phosphide (InP)-based quantum dots (QDs) are urgently needed to meet the demands of rapidly evolving display and lighting technologies. By adopting the highly efficient and cost-effective one-pot method and utilizing aluminum isopropoxide (AIP) as the Al source, a series of Al-doped InP/(Al)ZnS QDs with emission maxima ranging from 480 to 627 nm were synthesized. The photoluminescence quantum yield (PLQY) of the blue, green, yellow, orange, and red QDs, with emission peaks at 480, 509, 560, 600, and 627 nm, reached 34%, 62%, 86%, 96%, and 85%, respectively. Remarkably, the required reaction times for synthesizing the above QDs were all within 4 h, showcasing the high efficiency of this one-pot method. Moreover, the influence of Al-doping on red InP/ZnS QDs was thoroughly explored. Compared with undoped QDs, the increased PLQY, narrowed full-width at half-maximum (fwhm), and enhanced photostability were observed in Al-doped QDs. Characterization results revealed the relatively thicker shell in Al-doped QDs and demonstrated the presence of Al in the shell in the form of AlPOx. The increased shell thickness and narrowed fwhm indicated a reduced lattice strain at the core–shell interface in Al-doped QDs, which might result from the introduced trivalent Al3+, as it alleviated the charge mismatch at the core/shell interface. Approximately 3 g of QDs powders can be obtained through a single gram-scale one-pot preparation. The on-chip white light-emitting diode (LED), using the red and green Al-doped QDs as phosphors, exhibited a maximum power efficiency of 17.8 lm W–1 and stable CIE coordinates around (0.32, 0.35), and achieved a wide color gamut (97.4% of the NTSC color space), demonstrating the promising potential in lighting technologies.
研究领域:
材料科学
·
光学工程
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2019
·Vol. 7
·期 25
·7636-7642
·
IF 6.641
Fei Chen,Peiwen Lv,Xu Li,Zhenbo Deng,Feng Teng,Aiwei Tang
We report highly-efficient red-emitting InP/ZnS-based quantum-dot light-emitting diodes (QD-LEDs) fabricated via an all-solution-processed technique, in which colloidal ZnO nanoparticles (NPs) with tailoring compositions act as the electron transport layers (ETLs). The optical band gap, energy level and charge injection capability of ETLs can be manipulated by incorporation of various metal dopants with different valence states and ionic radii into ZnO NPs, and the QD-LEDs with ZnO:Mg NPs as the ETL exhibit a superior device performance over other counterparts. By rational passivation of Cl ions on the surface of ZnO:Mg NPs, a record external quantum efficiency (ηEQE) of 4.24% is successfully realized in the all-solution-processed red-emitting InP/ZnS-based QD-LEDs. The maximum luminance reaches a record 5595 cd m−2. The Cl@ZnO:Mg NPs not only provide a well-matched charge balance but also prevent interfacial exciton dissociation, boosting the enhancement of device performance. This work shows an effective composition-modulated interfacial engineering strategy for improving the performance of all-solution-processed QD-LEDs.
研究领域:
材料科学
·
光电工程
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产品关联
DOI
高影响因子
Nano Energy
·
2025
·
IF 17.1
Nasrud Din,Fawad Saeed,Sajid Hussain,Rai Muhammad Dawood Sultan,Zhang Yuyi,Premkumar Sellan,Qing Li,Zhiwei Zhao,Zhuoya Zhu,Jianming Zhou,Byung Seong Bae,Damian C. Onwudiwe,Qasim Khan,Zaman Ashraf,Wei Lei
Advanced bioimaging requires a uniform and large-area near-infrared (NIR) light illumination source. Achieving uniform light typically involves the use of inorganic near-infrared light-emitting diodes (NIR-LEDs), such as AlGaAs or GaAs, which are often complemented by additional optical components like reflectors and diffusers. However, the use of such optical components imposes limitations on their applicability and flexibility. On the other hand, Quantum dot NIR LEDs (NIR-QLEDs) offer distinct advantages for bioimaging, as they directly emit light uniformly across their entire surface, without the need for any additional optical components. However, for state-of-the-art quantum dot-based NIR LEDs, the previous NIR-QLEDs have suffered from suboptimal charge transport and rapid degradation, limiting their radiance and EQE. This work addresses these limitations by demonstrating an industrial-friendly, all-solution processing technique for NIR-QLED device fabrication with significantly enhanced radiance and efficiency by utilizing copper (Cu) doped InP/ZnSe quantum dots (QDs). Cu-doping in InP/ZnSe QDs generates localized intra-gap states, enhancing carrier trapping and radiative recombination while suppressing non-radiative pathways, leading to unprecedented NIR peak emission at 924 nm and a narrow full-width at half maximum (FWHM) of 81 nm. These intra-gap states facilitate pure NIR emission, thereby substantially enhancing the device's efficiency. Based on the energy levels of the doped InP/ZnSe quantum dots (QDs), ZnMgO and WO₃ are employed as the electron transport layer (ETL) and hole transport layer (HTL), respectively. ZnMgO and WO₃ provide favorable conduction and valence band offsets, ensuring efficient carrier injection while suppressing leakage currents. The NIR-QLED exhibited an external quantum efficiency (EQE) of approximately 16 %. With a high current density of 250 × 10⁻³ A cm⁻², the radiance improved to 62 W sr⁻¹ m⁻². The all-solution processing technique employed in this work enabled the fabrication of a large emission area measuring 35 mm × 35 mm. Under illumination from this NIR-QLED, subcutaneous deep vein images were clearly observable. Consequently, this all-solution process not only simplifies the production process but also facilitates scalability, paving the robust route for the development of larger-area devices tailored for complex bioimaging applications.
研究领域:
生物医学光学
·
纳米技术
·
材料科学
·
光子学
·
生物成像
·
半导体器件
✓ 已验证
产品关联
DOI
高影响因子
OPTICS COMMUNICATIONS
·
2018
·
IF 1.887
Wu Yang,Wanlu Zhang,Guilin Zhang,Jiatao Zhu,Guoxing He,Ruiqian Guo
We reported two types of tunable white LEDs (WLEDs) based on high quality the single emissive InP/ZnS quantum dots (QDs) and the dual emissive Ag:InP/ZnS QDs via myristic acid (MA) passivation and Ag doping. The WLEDs with three color InP/ZnS QDs could realize color rendering indices (CRIs) of 97–98, color quality scales (CQSs) of 94–98, and limited luminous efficacies (LLEs) of 238–246 lm/W at correlated color temperatures (CCTs) of 2700 K to 6500 K, and the WLEDs with dual emissive Ag:InP/ZnS and red emissive InP/ZnS QDs could realize CRIs of 90–93, CQSs of 90–93, and LLEs of 223–242 lm/W at CCTs of 2700 K to 4000 K. Finally, their luminous efficacies were estimated.
研究领域:
材料科学
·
光学工程
·
半导体技术
✓ 已验证
产品关联
DOI
高影响因子
SENSORS AND ACTUATORS A-PHYSICAL
·
2025
·
IF 4.9
Ziqiang Tian,Maoyuan Huang,Qi Zhong,Xiaomeng Gong,Jia Guo,Ruiqian Guo,Changchun Wang
The design and fabrication of photonic crystals with multiple optical states are significant and urgently desired. However, most conventional photonic crystals with scalable potential display only a single structural color mode, limiting their practical application. Herein, we successfully achieved a new type of dual-mode photonic crystal films through the co-assembly of polymer colloidal core@shell nanoparticles and InP@ZnS quantum dots at room temperature. The co-assembly process was completed with high efficiency by a powerful assembly technique called molecule-mediated shearing-induced assembly technique (MSAT). The obtained dual-mode photonic crystal films possessed two distinct optical states, including a structural color mode and a fluorescent color mode. The advantages of both photonic band gaps and fluorescence emission were synchronously integrated, exhibiting bright structural colors and vibrant fluorescent colors under sunlight irradiation and ultraviolet excitation, respectively. The switch of the two optical states was highly reversible and stable. Besides, we also found that the dual-mode photonic crystal films realized enhanced fluorescent emission from the slow photon effect, and the relationship between the fluorescence enhancement effect and order degrees of dual-mode PC films was studied. Finally, the dual-mode photonic crystal films were employed to design a visual coding-decoding system, and also as raw materials to produce anti-counterfeiting photonic paints. All the experiments provided a novel insight for achieving multiple optical states within a single system, creating opportunities for extending the application of photonic crystals in the realm of information storage, anti-counterfeiting, response materials, and pattern display.
研究领域:
光学材料
·
光子学
·
纳米技术
·
材料科学
·
荧光光谱学
·
信息安全
·
防伪技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）