CHEMICAL ENGINEERING JOURNAL
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2025
·
IF 13.2
Zhixin Wan,Fengzhi Li,Feng Jiang,Chao Wang,Junzhe Li,Hanyue Zhao,Yangzhou Ma,Jie Xu,Chao Yang
Metal selenides are promising anode materials for sodium-ion batteries due to their high theoretical capacity, but their practical application is hindered by sluggish reaction kinetics and structural instability. Herein, a MoSe 2 /Sb 2 Se 3 heterostructure embedded in a carbon matrix with abundant heterojunctions and selenium vacancies is synthesized via solid-state selenization using polyvinylpyrrolidone as both carbon source and nucleation inducer. The heterojunctions induce lattice distortion and generate internal electric fields to accelerate charge transfer, while selenium vacancies enhance Na + adsorption and create additional active sites. Density functional theory calculations reveal a reduced bandgap (1.25 eV) and optimized electronic structure, synergistically boosting conductivity and ion diffusion kinetics. Benefiting from these features, the MoSe 2 /Sb 2 Se 3 /C anode delivers a reversible capacity of 405.7 mAh g −1 at 0.2 A g −1 after 100 cycles and maintains 261.7 mAh g −1 at 5 A g −1 over 3000 cycles, outperforming most reported sodium-ion anodes. In situ XRD and TEM analyses confirm reversible phase evolution (MoSe 2 /Sb 2 Se 3 ↔ Na 3 Sb/Mo) and robust structural stability. This study demonstrates a synergistic defect-interface engineering strategy to advance heterostructured materials for durable energy storage.
研究领域:
材料科学
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储能
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纳米技术
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电化学
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电池技术
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产品关联
DOI
高影响因子
Science China-Materials
·
2022
·Vol. 66
·期 4
·1460-1470
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IF 8.64
Cheng Yufei,Sun Qian,Li Qiujie,Zhang Wenwan,Liu Enzhou,Fan Jun,Xie Haijiao,Miao Hui,Hu Xiaoyun
Antimony selenide (Sb 2 Se 3 ) is a narrow-band-gap semiconductor that has been increasingly used as an excellent light-harvesting material in photoelectrocatalysis. The unique connections of the one-dimensional (Sb 4 Se 6 ) n ribbon structural units determine the high anisotropy of their carrier transport. In this study, a reduced graphene oxide (rGO)-modified quasi-one-dimensional Sb 2 Se 3 @In 2 S 3 light-trapping heterostructure was successfully constructed by vapor transport deposition followed by an in situ hydrothermal method. The results showed that the thickness of the in situ grown non-layered In 2 S 3 nanosheets was significantly reduced from 30 to 10 nm under the space-confinement effect of rGO, facilitating the construction of light-trapping nanostructures and increasing the electrochemically active surface area of the photoelectrode. The quasi-one-dimensional Sb 2 Se 3 @In 2 S 3 -rGO nanorod photoelectrode achieved a higher photocurrent density (1.169 mA cm −2 ), which was 2 and 16 times higher than that of Sb 2 Se 3 @In 2 S 3 and pristine Sb 2 Se 3 , respectively. The ultrathin In 2 S 3 nanosheets were co-modified with rGO nanosheets to fabricate a brush-like composite photoelectrode that exhibited favourable stability with an average hydrogen production rate of 16.59 µmol cm −2 h −1 under neutral conditions. The experimental results and theoretical calculations both showed that the significant improvement in photoelectrochemical performance can be perfectly explained by the type-II heterojunction mechanism. This study provides a new exploration to design rGO-modified composite photoelectrodes for photoelectrochemical applications.
研究领域:
材料科学
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光电化学
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DOI
高影响因子
Journal of Materials Chemistry C
·
2019
·Vol. 7
·期 45
·14350-14356
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IF 6.641
Huafei Guo,Zhiwen Chen,Xin Wang,Qingfei Cang,Changhao Ma,Xuguang Jia,Ningyi Yuan,Jianning Ding
Antimony selenide (Sb2Se3) thin films are attractive light-absorbing materials used in low-cost and highly efficient thin-film solar cells. In order to increase the efficiency of Sb2Se3 solar cells based on a tin oxide (SnO2) buffer layer, an ultrathin cadmium sulfide (CdS) film was introduced at the interface between the fluorine doped SnO2 glass (FTO) and the SnO2 film. Different thicknesses of the CdS/SnO2 compound buffer layers were used to form p–n junctions with the Sb2Se3 film. The ultrathin CdS layer not only increased the carrier connection and transport, but also decreased the conduction band offset and grain boundary density of the Sb2Se3 film. Lastly, an efficiency of 5.27% for the FTO/CdS (10 nm)/SnO2 (40 nm)/Sb2Se3/Au solar cells was obtained, which is higher than the reported highest efficiency of Sb2Se3 solar cells based on a SnO2 buffer layer.
研究领域:
光伏学
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材料科学
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薄膜技术
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可再生能源
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DOI
高影响因子
Solar RRL
·
2018
·Vol. 3
·期 3
·1800224
·
IF 0
Huafei Guo,Zhiwen Chen,Xing Wang,Qingfei Cang,Xuguang Jia,Changhao Ma,Ningyi Yuan,Jianning Ding
Antimony selenide (Sb 2 Se 3 ) thin films are attractive light-absorbing materials for low-cost and highly efficient thin-film solar cells. Optimizing columnar growth of the grains and the proper hole concentration will be very helpful for improving the efficiency of Sb 2 Se 3 thin-film solar cells. In this paper, a monoatomic layer of Al 2 O 3 prepared by the atomic layer deposition (ALD) method is used to increase the hole concentration of the Sb 2 Se 3 film. The increase in the hole concentration is mainly due to the suppression of n-type defects, such as V se , or the increase in p-type defects, such as V sb . In addition, a simple and environmentally friendly oxygen plasma method is used to modify the CdS film to induce ordered columnar growth of the Sb 2 Se 3 film deposited by the rapid thermal evaporation (RTE) method. Finally, an oxygen plasma treatment on CdS and a monoatomic Al 2 O 3 layer covering the Sb 2 Se 3 was combined to fabricate a solar cell with a new structure, FTO/CdS/P-Sb 2 Se 3 /P + -Sb 2 Se 3 /Al 2 O 3 /Au, and its efficiency was increased from 2.48% to 6.7%. These simple, nontoxic, and industrially applicable methods provide potential avenues for preparing low-cost and highly efficient solar cells.
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DOI
Journal of Materiomics
·
2021
·Vol. 7
·期 6
·1324-1334
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IF 6.425
Guangxing Liang,Xingye Chen,Donglou Ren,Xiangxing Jiang,Rong Tang,Zhuanghao Zheng,Zhenghua Su,Ping Fan,Xianghua Zhang,Yi Zhang,Shuo Chen
Antimony selenide (Sb 2 Se 3 ) has drawn tremendous research attentions in recent years as an environment-friendly and cost-efficient photovoltaic material. However, the intrinsic low carrier density and electrical conductivity limited its scope of applications. In this work, an effective ion doping strategy was implemented to improve the electrical and photoelectrical performances of Sb 2 Se 3 thin films. The Sn-doped and I-doped Sb 2 Se 3 thin films with controllable chemical composition can be prepared by magnetron sputtering combined with post-selenization treatment based on homemade plasma sintered targets. As a result, the Sn-doped Sb 2 Se 3 thin film exhibited a great increase in carrier density by several orders of magnitude, by contrast, a less increase with one order of magnitude was achieved for the I-doped Sb 2 Se 3 thin film. Additionally, such cation or anion doping could simultaneously modify the conduction type of Sb 2 Se 3 , enabling the first fabrication of a substrate structured Sb 2 Se 3 -based quasi-homojunction thin film solar cell with configuration of Mo/Sb 2 Se 3 -Sn/Sb 2 Se 3 -I/ITO/Ag. The obtained power conversion efficiency exceeding 2% undoubtedly demonstrated its attractive photovoltaic application potential and further investigation necessity.
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Xiangwei He,Jianping Xu,Shaobo Shi,Lina Kong,Xiaosong Zhang,Lan Li
The technology for photodetection and localization of corona discharge typically necessitates the integration of various photodetectors (PDs) with different photoresponse bands and relies on external power supplies. A self-powered PD was fabricated utilizing the Sb2Se3/Ga2O3 heterojunction, exhibiting a broadband photoresponse from solar-blind ultraviolet (SBUV) to visible (Vis) and near-infrared (NIR) bands. The surface states of Ga2O3 nanorod array (NR) films were modulated by treatment with hydrogen peroxide (H2O2) solution for different periods of time to suppress the interface recombination of photogenerated carriers in type-I heterojunctions. The H2O2 treatment resulted in increased hydroxyl groups (−OH) and decreased oxygen vacancies in Ga2O3 NRs. The −OH can facilitate oxygen molecule (O2) adsorption in Ga2O3 NRs and form O2– to consume photogenerated holes to reduce the recombination of photogenerated carriers. However, the decrease of oxygen vacancies will cause a decline in the concentration of electrons in Ga2O3 NRs to hinder the carrier transport. Ultimately, the optimized Al/Sb2Se3/Ga2O3/FTO PD, subjected to H2O2 treatment for 4 min, demonstrated responsivities of 3.3, 130, and 180 mA/W under 254, 525, and 850 nm light illumination without applying a bias voltage, respectively. The utilization of oxygen adsorption and desorption processes to regulate the recombination of photogenerated carriers at the interface is an effective strategy for improving the performance of I-type heterojunction self-powered PDs. An approach was conceptually proposed for all-day real-time corona discharge monitoring in high-voltage transmission lines by utilizing the broadband photoresponse characteristic of PDs. The SBUV photoresponse was applied for the capture of SBUV light signals generated by corona discharge. The photoresponse in Vis and NIR light bands was employed to provide background information on corona discharge in both strong light conditions during daytime and weak light conditions during nighttime. The results provide a low power and miniaturized solution for the digitalization of the Power Internet of Things (IoT) and enable real-time monitoring of high-voltage transmission lines.
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产品关联
DOI
PubMed
高影响因子
Frontiers in Chemistry
·
2022
·
IF 5.545
Zhao Benhui,Deng Yueqing,Cao Lei,Zhu Jichun,Zhou Zhengji
Kesterite-structured Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaics have attracted considerable attention in recent years because of its low-cost and eco-friendly raw material, as well as high theoretical conversion efficiency. However, its photovoltaic performance is hindered by large open-circuit voltage (VOC) deficiency due to the presence of intrinsic defects and defect clusters in the bulk of CZTSSe absorber films. The doping of extrinsic cation to the CZTSSe matrix was adopted as an effective strategy to ameliorate defect properties of the solar cell absorbers. Herein, a novel Se&Sb2Se3 co-selenization process was employed to introduce Sb into CZTSSe crystal lattice. The results reveal that Sb-doping plays an active role in the crystallization and grain growth of CZTSSe absorber layer. More importantly, one of the most seriously detrimental SnZn deep defect is effectively passivated, resulting in significantly reduced deep-level traps and band-tail states compared to Sb free devices. As a result, the power conversion efficiency of CZTSSe solar cell is increased significantly from 9.17% to 11.75%, with a VOC especially enlarged to 505 mV from 449 mV. This insight provides a deeper understanding for engineering the harmful Sn-related deep defects for future high-efficiency CZTSSe photovoltaic devices.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）