Scientific Reports
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2014
·Vol. 4
·期 1
·1-9
·
IF 5.078
Zhong Jie,Xia Zhe,Luo Miao,Zhao Juan,Chen Jie,Wang Liang,Liu Xinsheng,Xue Ding-Jiang,Cheng Yi-Bing,Song Haisheng,Tang Jiang
To obtain high photovoltaic performances for the emerging copper zinc tin sulfide/selenide (CZTSSe) thin film solar cells, much effort has deservedly been placed on CZTSSe phase purification and CZTSSe grain size enhancement. Another highly crucial but less explored factor for device performance is the elemental constitution of CZTSSe surface, which is at the heart of p-n junction where major photogenerated carriers generate and separate. In this work we demonstrate that, despite the well-built phase and large grained films are observed by common phases and morphology characterization (XRD, Raman and SEM), prominent device efficiency variations from short circuited to 6.4% are obtained. Insight study highlights that the surface (0–250 nm) compositions variation results in different bulk defect depths and doping densities in the depletion zone. We propose that suitable sulfurization (at ~10 kPa sulfur pressure) drives optimization of surface constitution by managing the Cu, Zn and Sn diffusion and surface reaction. Therefore, our study reveals that the balance of elemental diffusion and interface reactions is the key to tuning the surface quality CZTSSe film and thus the performance of as resulted devices.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2015
·
IF 2.999
Yong Cui,Zhe Zhang,Xu Du,Wei Liu,Yulin Deng,Shi Liu,Gang Wang
Ternary metastable wurtzite structure Cu 2 SnS 3 nanocrystals were successfully synthesized via solvothermal way. As-synthesized Cu 2 SnS 3 nanocrystals were characterized in detail by X-ray powder diffraction, energy dispersive X-ray spectrometry, UV–Vis–NIR spectrometry and transmission electron microscopy . Hybrid solution has been obtained by mixing Cu 2 SnS 3 nanocrystals ink and Zn molecule precursor solution. Hybrid solution process was used to fabricate Cu 2 ZnSn(S,Se) 4 thin film .
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2022
·
IF 6.959
Jiayong Zhang,Bin Yao,Zhanhui Ding,Yongfeng Li
The performance stability of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is one of the key issues for its commercialization. Currently, Cu+ and Cu2+ salts have been successfully used to prepare CZTSSe solar cells, but comparative studies on the performance stability of the two types of solar cells are scarce. In this work, the performance degradation processes of CZTSSe solar cells, stored for 249 days under dry conditions, prepared respectively with Cu2+ and Cu+ salts (denoted Cu2+-cell and Cu+-cell, respectively) are investigated. It is found that the Cu+-cell has a higher initial PCE but worse performance stability than the Cu2+-cell. By calculation of the contribution percentage of VOC, JSC, and FF to the PCE and JL, Rs, Rsh, and (A, J0) to VOC, JSC, and FF for the two types of solar cells with the best initial PCE, it is concluded that the contribution percentages of JL, Rs, Rsh, and (A, J0) to a decreased PCE for the Cu2+-cell are nearly equal, while the decreased PCE for the Cu+-cell dominantly comes from a greatly decreased Rsh and sharply increased J0. The great decrease in Rsh is due to the formation of SnSe2, which may result from its chemical reaction pathway to fabricate the CZTSSe absorber. The sharp increase in J0 may be attributed to the formation of SnZn antisite defects. This work indicates that it is important to consider the Cu oxidation state of the salts to improve the stability of solution-processed CZTSSe solar cells.
研究领域:
材料科学
·
可再生能源
·
光电转换
✓ 已验证
产品关联
DOI
高影响因子
Nature Communications
·
2024
·Vol. 15
·期 1
·1-10
·
IF 14.7
Wang Jinlin,Shi Jiangjian,Yin Kang,Meng Fanqi,Wang Shanshan,Lou Licheng,Zhou Jiazheng,Xu Xiao,Wu Huijue,Luo Yanhong,Li Dongmei,Chen Shiyou,Meng Qingbo
Charge loss at grain boundaries of kesterite Cu 2 ZnSn(S, Se) 4 polycrystalline absorbers is an important cause limiting the performance of this emerging thin-film solar cell. Herein, we report a Pd element assisted reaction strategy to suppress atomic vacancy defects in GB regions. The Pd, on one hand in the form of PdSe x compounds, can heterogeneously cover the GBs of the absorber film, suppressing Sn and Se volatilization loss and the formation of their vacancy defects (i.e. V Sn and V Se ), and on the other hand, in the form of Pd(II)/Pd(IV) redox shuttle, can assist the capture and exchange of Se atoms, thus contributing to eliminating the already-existing V Se defects within GBs. These collective effects have effectively reduced charge recombination loss and enhanced p-type characteristics of the kesterite absorber. As a result, high-performance kesterite solar cells with a total-area efficiency of 14.5% (certified at 14.3%) have been achieved.
研究领域:
材料科学
·
太阳能
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry A
·
2024
·Vol. 12
·期 17
·10260-10268
·
IF 10.7
Yingfen Li,Xingye Chen,Runxi Wang,Nian Zhou,Fang Huang,Jun Zhao,Zhenghua Su,Shuo Chen,Guangxing Liang
In this study, Sb2S3 was introduced into the two-step selenization process to promote bottom grain growth and reduce the surface roughness of the Cu2ZnSn(S,Se)4 light-absorber layer. The introduction of Sb doping in Cu2ZnSn(S,Se)4 can passivate bulk and interface defects and a small conduction band offset (CBO) can be found, which facilitate the improvement of heterojunction carrier transport properties. Similarly, simulations illustrated that Sb doping improved device efficiency by controlling bulk and interface defects and band alignment. This optimized method facilitated the penetration of Sb, resulting in a high-quality CZTSSe absorber layer. Ultimately, the research culminated in a significant enhancement, yielding a solar cell with an impressive efficiency of 13.11%. These findings offer new possibilities for kesterite solar cells and advance the potential of CZTSSe materials in thin film photovoltaic applications.
研究领域:
材料科学
·
光伏技术
·
半导体物理
·
薄膜太阳能电池
·
无机功能材料
·
固态电子学
✓ 已验证
DOI
高影响因子
SOLAR ENERGY
·
2021
·
IF 5.742
Junye Tong,Shaotong Wang,Gang Wang,Yue Liu,Yuxiang Wang,Liping Chen,Lingling Wang,Daocheng Pan,Xintong Zhang,Yichun Liu
Ion doping strategy is a promising method to enhance the efficiency of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells, however, most of the reported works focus on studying the single ion doping in CZTSSe absorber layers . Here, Li + &Ag + and Li + &Cd 2+ double-ion-doping strategy are applied to improve the microstructure and device performances. We found that the double-ion-doping strategy can obviously increase the grain size, reduce the thickness of fine-grain layers and enhance the device performances. Furthermore, the PCEs of Li + &Ag + and Li + &Cd 2+ doped CZTSSe solar cells are up to 8.87% and 8.39%, respectively. It shows an encouraging improvement of over 43.5% and 35.8% enhancement compared with the traditional method (6.18%), and significantly higher than single ion doping strategy (7.60%, 7.99% and 7.11% for Li + , Ag + , and Cd 2+ doped CZTSSe solar cells). This work provides a new solution to improve the microstructure and device performances of CZTSSe solar cells.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
INORGANIC CHEMISTRY
·
2019
·
IF 4.85
Mengping He,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Yuena Meng,Sixin Wu
The earth-abundant Cu2ZnSnS4 (CZTS) quantum dots (QDs) have emerged as one potential substitute to toxic cadmium or rare indium QDs, but their application in quantum dot-sensitized solar cells (QDSSCs) is still limited by the improper particle size and the rigorous synthesis and ligand exchange conditions. Herein, we developed a one-pot hot injection method by using Tri-n-octylphosphine oxide (TOPO) as the solvent and oleylamine as the capping agent to synthesize Cu2ZnSn(S,Se)4 (CZTSSe) QDs with adjustable size and narrow size distribution. The key feature of this approach is that we can take advantage of the high-temperature nucleation, low-temperature growth, and strong reducibility of NaHB4 to prepare small-sized CZTSSe QDs without using 1-dodecanethiol (DDT) and to extend the light harvesting range through Se incorporation. After Se incorporation, it turns out that the conduction band (CB) level of CZTSSe QDs decreases, implying that the injection driving force of the electron to the CB of TiO2 films becomes weaker and a larger recombination would be induced at the TiO2/QDs/electrolyte interface. Benefiting from the broadened optoelectronic response range, the induced higher Jsc (16.80 vs 14.13 mA/cm2) finally leads to the increase of the conversion efficiency of CZTSSe QDSSC from 3.17% to 3.54% without further modification. Despite the fact that the efficiency is still far behind those of literature reported values through use of other chalcogenide sensitizers, this DDT-free approach solves the main hindrance for the application of CZTSSe QDs in QDSSCs and holds a more convenient way for ligand exchange, light absorption improvement, and particle size control.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry A
·
2020
·Vol. 9
·期 4
·2292-2300
·
IF 11.301
Yafang Qi,Xiaoyue Zhao,Yao Liu,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yuena Meng,Sixin Wu
In Cu2ZnSn(S,Se)4 photovoltaic devices, the exceptionally high density of 2CuZn + SnZn donor defects may induce bandgap fluctuations and thus limit Voc and PCE enhancement. We have previously reported that the partial substitution of Ag for Cu in Cu2ZnSn(S,Se)4 provides a promising way to effectively suppress CuZn defects and considerably enhance the cell performance for Cu2ZnSn(S,Se)4 photovoltaic devices. However, the bandgap fluctuations and detrimental band tailing fundamentally still limit cell performance. On the basis of a Ag-substituted CZTSSe system, in this paper, we demonstrate that partially substituting Zn with Mn could be a feasible tactic to pronouncedly decrease the bandgap fluctuations and prevent detrimental band tailing. Our in-depth investigation reveals that Mn substitution could increase depletion width, decrease the defect densities of the CuZn acceptor and 2CuZn + SnZn donor, and enable grain boundary (GB) inversion in a (Cu,Ag)2ZnSn(S,Se)4-based cell. As a result, an impressive PCE of 11.81% was achieved when the Mn substitution level was 10%, with a Voc of 478 mV, a Jsc of 37.89 mA cm−2, and an FF of 65.23%. This is so far the highest efficiency among Mn-substituted CZTSSe-based photovoltaic devices. By thoroughly understanding these photoelectric properties of the CZTSSe-based photovoltaic devices, we believe that the breakthrough in device efficiency will come soon through our continuous efforts.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY
·
2017
·
IF 4.018
Yingli Pei,Jing Guo,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Qingwen Tian,Yuena Meng,Sixin Wu
The doping of indium into absorber layer has been proven to be beneficial for hybrid buffer structured Cu 2 ZnSn(S, Se) 4 (CZTSSe) solar cells, but it is difficult to precisely control the doping content only relying on In diffusion from In 2 S 3 emitter. Herein, we use the solution method to prepare In-substituted CZTSSe layer by directly doping In 2 Se 3 into metal chalcogenides precursor solution. The doping content can be precisely controlled and the influences of indium doping on cell performance are systematically discussed. Mott-Schottky and resistivity measurements indicate that the carrier concentration and charge transport process are monotonically enhanced with increasing In/(In + Sn) content (0 at.%, 3 at.%, 6 at.% and 12 at.%). The improvements of series resistance also lead to a monotonic increase of fill factor ( FF ) from 52.1% to 64.8%. Due to the larger recombination at high doping content, the 6 at.% In content device finally contributes the highest power conversion efficiency of 8.47%. It is expected that a precisely controlled indium doping could further improve cell performance for efficient hybrid buffer structured devices.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
Solar RRL
·
2021
·Vol. 5
·期 8
·2100216
·
IF 8.582
Bin Xu,Xiatong Qin,Xiaoshuang Lu,Yulin Liu,Ye Chen,Hui Peng,Pingxiong Yang,Junhao Chu,Lin Sun
Cu 2 ZnSn(S,Se) 4 has been widely regarded as a promising thin-film solar cell material. In recent years, the development of Cu 2 ZnSn(S,Se) 4 solar cells has encountered a bottleneck, and the higher open-circuit voltage deficit mainly caused by the secondary phase, CZTSSe/CdS interface recombination, deep-level defects, and band-tailing effects has been an outstanding issue. Herein, the influence of the composition and phase distribution of the precursor thin film on the defect and performance of Cu 2 ZnSn(S,Se) 4 solar cells is studied. By modifying the distribution of composition and phase for precursor films, a Cu 2 ZnSn(S,Se) 4 absorber layer without secondary phase and with fewer detrimental defects can be obtained from the pure-phase precursor film. Thanks to the reduction of the band-tailing effects, the increase in the depletion width for heterojunction, and the decrease in CZTSSe/CdS interface recombination, the photovoltaic performance of CZTSSe thin-film solar cells is significantly improved. Finally, based on the excellent kesterite absorber layer, a Cu 2 ZnSn(S,Se) 4 solar cell with 11.51% power conversion efficiency (the active area efficiency is 12.4%) is prepared.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2025
·
IF 6.3
Jingyuan Guo,Letu Siqin,Yufei Li,Wenbo Li,Ruijian Liu,Hongmei Luan,Chengjun Zhu
The band alignment of Cu 2 ZnSn(S,Se) 4 (CZTSSe)/CdS(In) in novel CZTSSe solar cells without a ZnO window layer has been initially investigated in our previous studies. However, the In content of CdS(In) diffused into the absorber is low, and the ability to regulate the band arrangement is limited. In this work, we employ In-ion-doped absorbers to adjust defects. However, this approach leads to a significant loss in short-circuit current density (Jsc). To address this, Cd is introduced to enhance Jsc through grain growth promotion and morphological improvement, thereby offsetting the Jsc loss induced by In doping. The co-doping of In and Cd reduces the conduction band offset (CBO) from 0.28 eV to 0.21 eV, thereby inhibiting carrier recombination and enhancing transport efficiency. Additionally, the concentration of bulk defects is reduced by an order of magnitude. As a result, the fill factor (FF) increased from 56.97 % to 60.08 %, Jsc increased from 37.10 mA/cm 2 to 38.66 mA/cm 2 , and open-circuit voltage (Voc) increased from 431.64 mV to 440.48 mV. Finally, the power conversion efficiency (PCE) of CZTSSe solar cell is enhanced to 10.23 %.
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2021
·Vol. 10
·期 2
·779-788
·
IF 12.732
Kang Yin,Xiao Xu,Muyu Wang,Jiazheng Zhou,Biwen Duan,Jiangjian Shi,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng
Crystallization growth plays a crucial role in influencing the film quality and final photoelectric conversion performance of a kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cell. Herein, an exploration of a two-step selenization strategy to control the growth kinetics of an aqueous solution derived CZTSSe film for high solar cell efficiency is reported. By synergistically exploiting the benefits of high and low temperature selenization in facilitating the CZTSSe phase formation, introducing beneficial point defect states, configuring the interfacial energy band structure, and sustaining excellent surface microstructure, a total-area cell efficiency of 12.5% has been achieved. These results demonstrate the significance of controlling the crystallization growth of CZTSSe to improve the device performance. The high cell performance achieved here is comparable to that of hydrazine or dimethyl sulfoxide solution-based cells and thus would help facilitate the development of CZTSSe solar cells toward more diversified film fabrication technologies.
研究领域:
材料科学
·
可再生能源
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）