Advanced Materials Interfaces
·
2022
·Vol. 9
·期 9
·2102286
·
IF 6.389
Fei Chen,Congcong Deng,Xingfu Wang,Chao Liu,Qing Liu,Can Zou,Guohui Wu,Zixuan Zhao,Kai Chen,Fangliang Gao,Shaobin Zhan,Shuti Li
The development of self-powered high-performance UV photodetectors is essential for energy efficient futuristic wearable and portable applications. Herein, a self-powered organic/inorganic (PTAA/GaN microwire) hybrid heterojunction ultraviolet (UV) photodetector (PD) has been prepared by a low-cost and simple spin-coating method. Furthermore, the piezo-phototronic effect as an effective interfacial regulating strategy is utilized to modulate the photo-response performances of the PD by engineering the energy-band structure at the local junction/interface. Under 325 nm laser irradiation, the obtained device demonstrates excellent photo-response properties at 0 V bias, showing a high responsivity (268 mA W −1 ) and detectivity (2.49 × 10 12 Jones) under weak light intensity as low as 0.2 mW cm −2 , as well as fast response speeds (rise time of 14 ms and decay time of 23 ms). The PD exhibits better performance than most reported organic/inorganic heterojunction self-powered PDs. By applying a − 0.52% compressive strain, the responsivity and detectivity of the device are greatly enhanced by 32% without external bias, and by 1256% at 2 V bias under 1.4 mW cm −2 light intensity. On the contrary, by applying a 0.41% tensile strain, the responsivity and detectivity are decreased by 18% without external bias. It indicates that the strain has a significant modulating effect on the photo-response performance of the PD. The positive piezo-potential modulated energy-band structure at the PTAA/GaN interface may account for the enhanced performance. This study demonstrates a promising approach to optimize the performance of a self-powered heterostructure optoelectronic devices through strain modulated.
研究领域:
材料科学
·
光电子学
·
纳米技术
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2023
·
IF 6.2
Qing Liu,Jiang Shi,Weidong Song,Xingfu Wang,Longfei He,Shaobin Zhan,Fangliang Gao,Shuti Li
As an important component of optical sensors , position-sensitive detector (PSD) plays an important role in non-contact measurement systems and is widely used in many important fields. However, the preparation and application of ultraviolet (UV) PSD are still to be studied. Herein, we propose a high precision UV PSD constructed by graphene (Gr)/GaN heterojunction (active area is 5 ×5 mm 2 ) for the first time, and Fowler-Nordheim tunneling mechanism has been used to improve device performance. Benefiting from the FNT, under a weak light power of 0.06 mW/cm 2 , the PSD is able to determine the position of the UV light spot through the output photocurrent difference, displays high precision (0.16 μA/mm), excellent weak light detection capability，and good linearity without power supply. Besides, the Gr/GaN show an ultralow threshold voltage (0.132 V) of FNT. When the bias is higher than 0.132 V, photogenerated carriers will tunneling the thin insulation layer by the FNT, resulting in a multiplication of the photocurrent. Therefore, under the same power densities light irradiation (0.06 mW/cm 2 ), the device exhibits an ultrahigh responsivity of 1.88 A/W, a remarkable detectivity of 2.71 × 10 13 Jones, and a high LDR of over 99.58 at 0 V bias. More importantly, as an optoelectronic demodulator the device realizes the decoding of optical signals into electrical signals, showing great potential for application in non-contact measurement systems.
研究领域:
光学传感器
·
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2019
·
IF 8.456
Cancan Tian,Fei Wang,Yunpeng Wang,Zhe Yang,Xuejiao Chen,Jingjing Mei,Hongzhen Liu,Dongxu Zhao
Self-powered photodetectors (SPPDs) have attracted lots of attention due to their various advantages including no external power sources, high-sensitivity, fast response speed, and so on. This study reports the fabrication and characterization results of CsPbBr3 microcrystals (MCs) grown by chemical vapor deposition (CVD) method, and the SPPDs have been fabricated on the basis of the CsPbBr3 MCs layer with the sandwich structure of GaN/CsPbBr3 MCs/ZnO. Such designed SPPD shows the detectivity (D*) of 1014 Jones, on/off ratio of up to 105, peak responsivity (R) of 89.5 mA/W, and enhanced stability at the incident wavelength of 540 nm. The photodetector enables the fast photoresponse speed of 100 μs rise time and 140 μs decay time. The performances of the SPPD are comparable to the best ones ever reported for CsPbBr3 based PDs but do not need external power supplies, which mainly benefit from the low trap density, long carrier diffusion of high quality CsPbBr3MCs film, and the built-in electric fields in the sandwich structure of GaN/CsPbBr3/ZnO layers.
研究领域:
材料科学
·
光子学
·
纳米技术
·
半导体器件
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Biosensors-Basel
·
2023
·Vol. 13
·期 8
·831
·
IF 5.4
Shengjie Hu,Xuecheng Jiang,Liang Yang,Xue Tang,Guofeng Yang,Yuanyuan Hu,Jie Wang,Naiyan Lu
Schistosomiasis, typically characterized by chronic infection in endemic regions, has the potential to affect liver tissue and pose a serious threat to human health. Detecting and screening for this disease early on is crucial for its prevention and control. However, existing methods encounter challenges such as low sensitivity, time-consuming processes, and complex sample handling. To address these challenges, we report a soluble egg antigen (SEA)-based functionalized gridless and meander-type AlGaN/GaN high electron mobility transistors (HEMT) sensor for the highly sensitive detection of antibodies toSchistosoma japonicum. Immobilization of the self-assembled membrane on the gate surface was verified using a semiconductor parameter analyzer, scanning electron microscope (SEM), and atomic force microscopy (AFM). The developed biosensor demonstrates remarkable performance in detecting anti-SEA, exhibiting a linear concentration range of 10 ng/mL to 100 μg/mL and a sensitivity of 0.058 mA/log (ng/mL). It also exhibits similar excellent performance in serum systems. With advantages such as rapid detection, high sensitivity, miniaturization, and label-free operation, this biosensor can fulfill the requirements for blood defense.Keywords:biomedical sensor;AlGaN/GaN high electron mobility transistors (HEMT);Schistosoma japonicum;soluble egg antigens (SEA);rapid detection
研究领域:
生物医学工程
·
传染病学
·
传感器技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
DALTON TRANSACTIONS
·
2017
·Vol. 46
·期 8
·2643-2652
·
IF 4.029
Aimin Wu,Jing Li,Baodan Liu,Wenjin Yang,Yanan Jiang,Lusheng Liu,Xinglai Zhang,Changmin Xiong,Xin Jiang
(GaN)1−x(ZnO)x solid solution has attracted extensive attention due to its feasible band-gap tunability and excellent photocatalytic performance in overall water splitting. However, its potential application in the photodegradation of organic pollutants and environmental processing has rarely been reported. In this study, we developed a rapid synthesis process to fabricate porous (GaN)1−x(ZnO)x solid solution with a tunable band gap in the range of 2.38–2.76 eV for phenol photodegradation. Under visible-light irradiation, (GaN)0.75(ZnO)0.25 solid solution achieved the highest photocatalytic performance compared to other (GaN)1−x(ZnO)x solid solutions with x = 0.45, 0.65 and 0.85 due to its higher redox capability and lower lattice deformation. Slight Ag decoration with a content of 1 wt% on the surface of the (GaN)0.75(ZnO)0.25 solid solution leads to a significant enhancement in phenol degradation, with a reaction rate eight times faster than that of pristine (GaN)0.75(ZnO)0.25. Interestingly, phenol in aqueous solution (10 mg L−1) can also be completely degraded within 60 min, even under the direct exposure of sunlight irradiation. The photocurrent response indicates that the enhanced photocatalytic activity of (GaN)0.75(ZnO)0.25/Ag is directly induced by the improved transfer efficiency of the photogenerated electrons at the interface. The excellent phenol degradation performance of (GaN)1−x(ZnO)x/Ag further broadens their promising photocatalytic utilization in environmental processing, besides in overall water splitting for hydrogen production.
研究领域:
材料科学
·
环境科学
·
光催化
·
半导体物理
·
能源化学
✓ 已验证
DOI
高影响因子
ADVANCED MATERIALS
·
2026
·
IF 29.1
Tingting Lin,Liwei Liu,Xinguo Liu,Changjian Zhou,Wenliang Wang
High polarization-selectivity UV photodetectors with multifunctional integration play a crucial role in the next-generation optoelectronic devices. However, weak and unruly dichroism radio (DR) of naturally anisotropic materials seriously restricts the detection accuracy and practical application, especially for wide-bandgap materials with rough surfaces and inherent weak anisotropy. In this work, a novel approach for the polarization-selectivity UV photosynapse devices with PdSe 2 / a -plane GaN heterostructures has been proposed. A simple pre-selenization treatment is employed to enhance the anisotropy (DR = 16) and crystallinity of PdSe 2 , addressing the current limitation of insufficient anisotropy (DR<5) that hinders the practical application. The devices take advantage of inherent anisotropic materials and synergistic effect from the in situ growth of PdSe 2 on a -plane GaN, resulting in an enhancement of anisotropic photocurrent ratio from 1. 6 to 10.7. Thanks to the synergistic effect of the whole device architecture, the devices reveal an ultra-long relaxation time of up to 282s and effectively improve the details of image recognition, speed up calculations, and accurate detection capabilities. The combination of high polarization-selectivity, accurate detection, ultra-long memory, and outstanding data processing capabilities establishes the photodetector as a promising candidate for the on-chip integration of multi-information carrying, processing, and neuromorphic computing.
✓ 已验证
DOI
PubMed
高影响因子
MICROCHIMICA ACTA
·
2026
·Vol. 193
·期 5
·304
·
IF 5.4
Xiong Nuoxuan,Lin Yue,Luo Fang,Lin Cuiying,Qiu Bin,Lin Zhenyu,Jiang Zhou,Wang Jian
Nucleolin (NCL) is a critical biomarker for early cancer diagnosis and prognostic evaluation. To overcome the limitations of existing detection methods, such as insufficient sensitivity and cumbersome procedures, this study reports an ultrasensitive biosensing platform based on an organic photoelectrochemical transistor (OPECT). The biosensor employs a guanine-rich DNA aptamer, AS1411, immobilized on an n-GaN/Au gate electrode. Specific binding to NCL induces AS1411 to fold into a G-quadruplex (G4) structure, whose intrinsic π-π stacking interactions are proposed to establish an efficient charge transport channel. This effect substantially promotes the separation of photogenerated holes, and combining this with the intrinsic gain of the OPECT transconductance mechanism yields notable signal amplification. As a result, the proposed sensor exhibits ultrahigh sensitivity with a limit of detection (LOD) of 0.28 pM (S/ N = 3) and a wide linear range from 1 pM to 100 nM. The excellent analytical performance originates from the synergistic effect of OPECT amplification, G4-mediated charge transport, efficient photoelectric conversion of the GaN/Au gate, and minimal signal loss. Moreover, the biosensor demonstrates high selectivity against potential interfering proteins and reliable quantitative accuracy in complex biological matrices. In the analysis of breast cancer cell lysates, recoveries range from 96.4% to 97.6%, consistent with the standard ELISA method. This work establishes a label-free detection strategy wherein ultrasensitive signal transduction is achieved exclusively through aptamer conformational switching-without requiring heterojunction engineering enabling point-of-care NCL analysis. Graphical
✓ 已验证
DOI
PubMed
高影响因子
Surfaces and Interfaces
·
2025
·
IF 6.3
Diancheng Zhu,Linyan Gu,Wenxi Zhang,Miao Cheng,Tao Wei,Qianqian Liu,Ruirui Wang,Wanfei Li,Ming Li,Bo Liu,Jing Hu
In this work, we present a room temperature (RT, 25 ± 3 °C) nitrogen dioxide (NO 2 ) sensor based on antimony doped gallium nitride (Sb-GaN) thin film, fabricated using a multi-target co-sputtering method with a physical vapor deposition (PVD). The effects of Sb incorporation and sputtering power on gas-sensitive properties of the fabricated sensor were investigated. Intriguingly, the optimized Sb-GaN thin film demonstrated a substantial response ( S = 5.8) to 10 ppm NO 2 gas at 25 °C in darkness, with response/recovery times of 185/750 s and a detection limit (DL) as low as 1.64 ppb. Additionally, the sensor exhibited excellent selectivity, reproducibility and good stability in high humidity environment. The XPS study showed that the sensor’s stability deteriorates in 10 days due to the residual adsorption of oxygen ions on the film’s surface. In addition, the sensor’s response-recovery characteristics under six different light irradiations were compared, and red light was found to significantly accelerate the recovery process of the device. The sensing enhancement (4.5 times) of the Sb-GaN sensor is ascribed to the structure induced by Sb-doping and the augmented active sites. Importantly, these investigations offer a valuable reference for synthesis of reliable, eco-friendly, and energy-efficient sensing materials for gas detection in darkness.
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Physics
·
2025
·
IF 9.7
Hao Wu,Jinyi Pan,Jie Wang,Chenyu Guo,Sichao Du,Duo Xiao,Daoyou Guo,Jun Hu
Broadband ultraviolet photodetectors (BUVPDs), with spectral sensitivity spanning from the deep-ultraviolet band (DUV) to near-ultraviolet band (NUV), offer compact, high-speed, and versatile detection solutions for environmental monitoring, safety, and advanced imaging applications. Herein, we propose and demonstrate a self-powered BUVPD based on a homojunction composed of gallium nitride (GaN) quantum dots and epitaxial GaN. By harnessing the synergistic effects of the pyroelectric and photovoltaic responses, the device exhibits excellent performance, including a high responsivity of 149 mA/W, a specific detectivity of 4.5 × 10 11 Jones, and a fast response time of 10 ms. The underlying photo-response mechanism is elucidated via energy band diagram analysis of the GaN homojunction. Furthermore, the influence of ambient temperature on device performance is systematically investigated. Notably, the dark current remains at the pA level across a wide temperature range from 83 K to 373 K. At 373 K, the responsivity shows only a slight deviation from room-temperature values, highlighting the detector's robustness under extreme thermal conditions. Benefiting from its outstanding optoelectronic properties, the device also demonstrates promising deep-UV transmission-mode imaging capabilities under weak light conditions. This work presents a novel design strategy for high-performance BUVPDs and paves the way for next-generation, high-sensitivity deep-ultraviolet imaging technologies.
研究领域:
半导体物理
·
光电子学
·
纳米材料
·
传感器技术
·
成像技术
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2024
·
IF 5.1
Congming Ke,Shoulin Liu,Yiao Pang,Yongping Wei,Yaping Wu,Qiufa Luo,Yueqin Wu,Jing Lu
With the rapid development of the third-generation semiconductor materials, the chemical mechanical polishing rate and surface quality of single-crystal gallium nitride (GaN) substrates have been a research hot-spot. In this work, the synergistic effect of abrasive friction and glycine (Gly) on improving the chemical mechanical polishing (CMP) performance of single-crystal GaN substrate is proposed and studied systematically. The results indicated that the polishing solutions with Gly have a 2.3-fold improvement in material removal rate (MRR) as well as scratch-free surface than that without Gly. The maximum MRR of the single-crystal GaN substrate is 129.4 nm/h with surface roughness (Ra) of 0.64 nm attained by using the polishing solutions containing only 3 wt% potassium persulfate (K 2 S 2 O 8 ). In contrast, when Gly is added as a reaction reagent, which can be activated by abrasive friction, the maximum MRR is increased to 304.2 nm/h with Ra of 0.42 nm. Meanwhile, the epitaxial evaluation indicates that two-dimensional (2D) MoS 2 grown on processed single-crystal GaN substrate has superior crystalline quality and optical properties. Finally, the polishing mechanism of the single-crystal GaN substrate using the mixed solutions of K 2 S 2 O 8 and Gly is discussed. The proposed CMP method has potential applications in the semiconductor and microelectronics industries.
研究领域:
材料科学
·
半导体技术
✓ 已验证
DOI
高影响因子
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
·
2025
·
IF 5.4
Diancheng Zhu,Yiting Liu,Yangtao Qian,Miao Cheng,Tao Wei,Qianqian Liu,Ruirui Wang,Wanfei Li,Zhenxiao Fu,Haiyang Jiang,Zibo Li,Bo Liu,Jing Hu
Gallium nitride (GaN)-based gas sensors are widely recognized for their excellent carrier mobility, high-temperature resistance, and corrosion resistance, making them suitable for extreme working conditions. However, pure-phase GaN suffers from poor sensitivity and slow response/recovery rates due to its surface chemical stability. In this work, we proposed an Ag-modified GaN thin film, fabricated via magnetron sputtering, for direct integration into a sensor device for room-temperature NO 2 detection. The Ag modification is achieved through a dual approach: thermal diffusion combined with sputtering, followed by wet etching. The optimized Ag-GaN sensor demonstrates a maximum response of ∼4.3 toward 10 ppm NO 2 at room temperature (25 ± 3 °C), with excellent linearity across two concentrations range (1–10 ppm and 400–1000 ppb). The device exhibits a theoretical detection limit of ∼1.35 ppb and a response/recovery time of 150/400 s. Furthermore, the sensor shows highly reversible reaction-recovery behavior, with 2.05 % relative standard deviation (RSD), indicating outstanding repeatability. These findings advance the application of GaN-based materials in gas sensing, particularly for sensitive and reliable NO 2 detection at room temperature.
研究领域:
材料科学
·
气体传感技术
·
纳米材料
·
半导体器件
✓ 已验证
产品关联
DOI
高影响因子
INORGANIC CHEMISTRY
·
2018
·
IF 4.7
Jing Li,Baodan Liu,Aimin Wu,Bing Yang,Wenjin Yang,Fei Liu,Xinglai Zhang,Vladimir An,Xin Jiang
Photoelectrochemical water splitting has emerged as an effective artificial photosynthesis technology to generate clean energy of H2 from sunlight. The core issue in this reaction system is to develop a highly efficient photoanode with a large fraction of solar light absorption and greater active surface area. In this work, we take advantage of energy band engineering to synthesize (GaN)1–x(ZnO)x solid solution nanowires with ZnO contents ranging from 10.3% to 47.6% and corresponding band gap tailoring from 3.08 to 2.77 eV on the basis of the Au-assisted VLS mechanism. The morphology of nanowires directly grown on the conductive substrate facilitates the charge transfer and simultaneously improves the surface reaction sites. As a result, a photocurrent approximately 10 times larger than that for a conventional powder-based photoanode is obtained, which indicates the potential of (GaN)1–x(ZnO)x nanowires in the preparation of superior photoanodes for enhanced water splitting. It is anticipated that the water-splitting capability of (GaN)1–x(ZnO)x nanowire can be further increased through alignment control for enhanced visible light absorption and reduction of charge transfer resistance.
研究领域:
材料科学
·
可再生能源
·
纳米技术
·
光电化学
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）