Nature Energy
·
2025
·
IF 60.1
Xiang Chunxu,Yuan Mingjun,Ding Chuan’an,Zheng Yuanyuan,Li Yize,Hu Xiaole,Zhang Jie,Li Xinyu,Ma Chengfeng,Wang Shaoying,Yan Weibo,Yang Chunlei,Huang Wei,Xin Hao
Solution processing has great advantages for emerging thin-film solar cells but remains a big challenge for multielemental inorganic films due to complicated phase evolution and grain growth during crystallization. Here we report the fabrication of uniform, large-area Cu 2 ZnSn(S,Se) 4 (CZTSSe) films and solar modules from solution. By tuning the thiourea/metal ratio to increase film porosity—thereby promoting more uniform vertical reaction and lateral grain growth—we improved the uniformity of CZTSSe films and achieved a single-cell efficiency of 13.4% and a solar module efficiency of 8.91%. We further optimized the module structure to reduce non-ideal contact and patterning-induced shunt and resistive losses, resulting in a champion CZTSSe module with a National Renewable Energy Laboratory-certified efficiency of 10.1%. This module also exhibits the lowest cell-to-module loss in open circuit voltage and current density among state-of-the-art emerging thin-film solar modules. Our work demonstrates the viability of solution processing to deposit uniform, large-area CZTSSe film and efficient solar modules, advancing the development of the technology.
研究领域:
材料科学
·
光伏技术
·
薄膜太阳能电池
·
无机功能材料
·
能源材料
✓ 已验证
产品关联
DOI
高影响因子
RSC Advances
·
2018
·Vol. 8
·期 8
·4119-4124
·
IF 2.936
Pengpeng Zhang,Qing Yu,Xue Min,Linbao Guo,Jiangjian Shi,Xiangyun Zhao,Dongmei Li,Yanhong Luo,Huijue Wu,Qingbo Meng,Sixin Wu
The annealing temperature of solution-processed Cu2ZnSn(S,Se)4 (CZTSSe) precursor films has been carefully optimized for favorable selenization. At higher temperature, more solvent will be removed, and the crystallinity of the precursor films can be improved. It is found that, although the crystallinity of selenized film is continuously enhanced by increasing the temperature, a dense CZTSSe film with round and large grains can only be achieved at medium high temperature ranging from 350 to 400 °C. Further investigation reveals that, in this regime, the carrier and defect densities are obviously reduced, leading to average photoelectric conversion efficiency (PCE) improved from 5.1% to 9.4%. An optimal annealing temperature of 380 °C is obtained and up to 10.04% of photoelectric conversion efficiency has been achieved.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2020
·
IF 6.984
Bin Xu,Chuanhe Ma,Xiaoshuang Lu,Yulin Liu,Qiao Zhang,Ye Chen,Pingxiong Yang,Junhao Chu,Lin Sun
Cu 2 ZnSn(S,Se) 4 (CZTSSe) has received considerable attention as the promising absorber for thin-film solar cells. For traditional selenization process, the issues of Sn-loss, lower S/(S + Se) ratio, and unsuitable back contact interface extensively exist in CZTSSe solar cells. In present work, SnSe and SnS powder is introduced during selenization process, respectively. The effects of SnSe and SnS powder on CZTSSe films and the Mo/CZTSSe interface have been comprehensively studied. We discover that SnS not only can provide the Sn-contained vapor in selenization process but also offer S-vapor. Due to the presence of Sn-contained vapor, the number of voids in the CZTSSe absorber and Mo/CZTSSe interface decreases remarkably and the Sn-loss is effectively suppressed. The thickness of Mo(S,Se) 2 layer is significantly reduced, and the S/(S + Se) ratio in CZTSSe bulk obviously increases owing to the presence of S-vapor. As a consequence, the open-circuit voltage and fill factor of the solar cell significantly increase and the CZTSSe solar cell with efficiency of 10.07% (total area) is successfully fabricated.
研究领域:
材料科学
·
能源技术
✓ 已验证
DOI
高影响因子
Chinese Physics B
·
2018
·Vol. 27
·期 1
·016402
·
IF 1.321
Xue Min,Jiangjian Shi,Linbao Guo,Qing Yu,Pengpeng Zhang,Qingwen Tian,Dongmei Li,Yanhong Luo,Huijue Wu,Qingbo Meng,Sixin Wu
The Zn/Sn ratio in Cu2ZnSn(S, Se)4 (CZTSSe) films has been regulated to control the composition-related phase, defect, and photoelectric properties for high performance kesterite solar cells. It is found that the increase in the Zn/Sn ratio can slightly narrow the energy band gap to extend the light absorption range and improve the photocurrent. Optimal Zn/Sn ratio of 1.39 in CZTSSe film is obtained with the least secondary phase, the lowest defect density, and the longest charge recombination lifetime. Up to 10.1% photoelectric conversion efficiency has been achieved by this composition regulation.
研究领域:
光伏技术
·
材料科学
·
半导体材料
·
可再生能源
✓ 已验证
DOI
高影响因子
JOURNAL OF POWER SOURCES
·
2016
·
IF 6.333
Yanchun Yang,Xiaojiao Kang,Lijian Huang,Song Wei,Daocheng Pan
Earth abundant Cu 2 ZnSn(S,Se) 4 (CZTSSe) has been considered as one of the most promising thin film solar cell absorber candidates. Here, we develop a facile water-based precursor solution approach for depositing high-efficiency Cu 2 ZnSn(S,Se) 4 thin film solar cells. In this environmentally friendly approach, inexpensive elemental Cu, Zn, Sn and S powders are used as the starting materials and are dissolved in the aqueous solution of thioglycolic acid and methylamine, forming a homogeneous precursor solution for depositing Cu 2 ZnSnS 4 nanocrystal thin film . As-deposited CZTS nanocrystal thin films are selenized to form the large-grain CZTSSe absorber layers . It was found that Na doping plays an important role in the formation of the extremely dense and flat CZTSSe absorber layer, and fill factor can be significantly improved for Na-doped CZTSSe solar cells, which lead to a photoelectric conversion efficiency of 6.96% with an open-circuit voltage of 378 mV, a short current density of 28.17 mA cm −2 , and a fill factor of 65.4%.
研究领域:
材料科学
·
新能源材料
·
半导体薄膜
·
光伏技术
·
无机功能材料
✓ 已验证
DOI
高影响因子
SOLAR ENERGY
·
2019
·
IF 4.674
Huiling Cai,Liquan Yao,Yingsen Xia,Chunyan Dao,Jianmin Li,Limei Lin,Zhiping Huang,Guilin Chen
In this work, a three-step (sulfurization-selenization-sulfurization) annealing process was designed to optimize the surface constitution of Cu 2 ZnSn(S, Se) 4 (CZTSSe) thin films, which was prepared by oxide nanoparticles-based approach. The devices with the Mo/CZTSSe/CdS/ZnMgO/ZnO:Al/Al structure were fabricated and their performances were studied. The additional post-sulfurization with low toxicity sulfur powder has negligible impact on the structure, morphology and composition of CZTSSe bulk, however, it improves open circuit voltage of device significantly. The open circuit voltage can be increased significantly from 408 mV (without surface sulfurization) to 497 mV (with surface sulfurization). This is benefited from the increase of surficial sulfur content and the broadening of the surface band-gap of the CZTSSe thin film. The result is confirmed by X-ray photoelectron spectroscopy analysis. Such a crucial three-step annealing process promotes the power conversion efficiency from 4.71% (2-step) to 6.37% (3-step), which is the champion efficiency of oxide precursor derived CZTSSe solar cell.
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
产品关联
DOI
高影响因子
Scientific Reports
·
2014
·Vol. 4
·期 1
·1-9
·
IF 5.078
Zhong Jie,Xia Zhe,Luo Miao,Zhao Juan,Chen Jie,Wang Liang,Liu Xinsheng,Xue Ding-Jiang,Cheng Yi-Bing,Song Haisheng,Tang Jiang
To obtain high photovoltaic performances for the emerging copper zinc tin sulfide/selenide (CZTSSe) thin film solar cells, much effort has deservedly been placed on CZTSSe phase purification and CZTSSe grain size enhancement. Another highly crucial but less explored factor for device performance is the elemental constitution of CZTSSe surface, which is at the heart of p-n junction where major photogenerated carriers generate and separate. In this work we demonstrate that, despite the well-built phase and large grained films are observed by common phases and morphology characterization (XRD, Raman and SEM), prominent device efficiency variations from short circuited to 6.4% are obtained. Insight study highlights that the surface (0–250 nm) compositions variation results in different bulk defect depths and doping densities in the depletion zone. We propose that suitable sulfurization (at ~10 kPa sulfur pressure) drives optimization of surface constitution by managing the Cu, Zn and Sn diffusion and surface reaction. Therefore, our study reveals that the balance of elemental diffusion and interface reactions is the key to tuning the surface quality CZTSSe film and thus the performance of as resulted devices.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2015
·
IF 2.999
Yong Cui,Zhe Zhang,Xu Du,Wei Liu,Yulin Deng,Shi Liu,Gang Wang
Ternary metastable wurtzite structure Cu 2 SnS 3 nanocrystals were successfully synthesized via solvothermal way. As-synthesized Cu 2 SnS 3 nanocrystals were characterized in detail by X-ray powder diffraction, energy dispersive X-ray spectrometry, UV–Vis–NIR spectrometry and transmission electron microscopy . Hybrid solution has been obtained by mixing Cu 2 SnS 3 nanocrystals ink and Zn molecule precursor solution. Hybrid solution process was used to fabricate Cu 2 ZnSn(S,Se) 4 thin film .
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2022
·
IF 6.959
Jiayong Zhang,Bin Yao,Zhanhui Ding,Yongfeng Li
The performance stability of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is one of the key issues for its commercialization. Currently, Cu+ and Cu2+ salts have been successfully used to prepare CZTSSe solar cells, but comparative studies on the performance stability of the two types of solar cells are scarce. In this work, the performance degradation processes of CZTSSe solar cells, stored for 249 days under dry conditions, prepared respectively with Cu2+ and Cu+ salts (denoted Cu2+-cell and Cu+-cell, respectively) are investigated. It is found that the Cu+-cell has a higher initial PCE but worse performance stability than the Cu2+-cell. By calculation of the contribution percentage of VOC, JSC, and FF to the PCE and JL, Rs, Rsh, and (A, J0) to VOC, JSC, and FF for the two types of solar cells with the best initial PCE, it is concluded that the contribution percentages of JL, Rs, Rsh, and (A, J0) to a decreased PCE for the Cu2+-cell are nearly equal, while the decreased PCE for the Cu+-cell dominantly comes from a greatly decreased Rsh and sharply increased J0. The great decrease in Rsh is due to the formation of SnSe2, which may result from its chemical reaction pathway to fabricate the CZTSSe absorber. The sharp increase in J0 may be attributed to the formation of SnZn antisite defects. This work indicates that it is important to consider the Cu oxidation state of the salts to improve the stability of solution-processed CZTSSe solar cells.
研究领域:
材料科学
·
可再生能源
·
光电转换
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2024
·
IF 5.4
Boyang Han,Yongfeng Li,Rensheng Wang,Wenjie Zhu,Zhenyan He,Huanhuan Sun,Xiuqing Meng,Shihua Huang,Yanping Song,Jiayong Zhang,Bin Yao
Suppressing the CuZn antisite defects and band tailing states is paramount for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. To this end, cation doping has been widely adopted and investigated. Nevertheless, to the best of our knowledge, there is a scarcity of reports specifically addressing the doping of group IIIA elements to date. Herein, we present a viable strategy, incorporating the Al element, to achieve superior absorber quality and device performance. The addition of Al-doping not only improves the selenization degree but also enhances surface smoothness and induces a more Cu-deficient CZTSSe surface, thereby elevating both the quality of the absorber and heterojunction interface. Furthermore, we observe that the CuZn defect can be effectively mitigated through the substitution of Al dopants at the Zn site, consequently resulting in a reduction of band tailing states. Consequently, it significantly improves the efficiency from 6.24 to 9.25% with a low open-circuit voltage deficit of ∼0.291 V relative to the doping-free case, one of the highest values for the type of IIIA element doping cells. Our results demonstrate that Al incorporation is also a feasible pathway to suppress the antisite defects and band tailing states in solution-processed CZTSSe, thereby facilitating the realization of efficient kesterite solar cells.
研究领域:
材料科学
·
可再生能源
·
太阳能电池技术
·
半导体物理
✓ 已验证
DOI
高影响因子
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
·
2024
·Vol. 130
·期 3
·1-11
·
IF 2.5
Hu Jiaming,Han Xiuxun,Zhu Wuzhi,Wu Fangfang,Tan Xiaohui
Incorporating substitutional elements from groups I, II and IV is an important approach to improve the quality of kesterite thin films. Among the elements, Ag and Ge are most effective in promoting the performance of Cu 2 ZnSn(S,Se) 4 solar cells. Although several theoretical and experimental studies have been conducted on the Ag/Ge-alloyed kesterite, there are significant differences in the reported morphological characteristics, photovoltaic performance and even the optimal Ag/Ge substitution ratio due to different preparation processes utilized, which leads to difficulties in comparing the Ag-incorporated and Ge-incorporated kesterite solar cells. Currently, there is little literature on the comparative study concerned. Herein, we fabricated Ag-alloyed and Ge-alloyed kesterite solar cells based on the same solution method and process conditions, and laterally compared the effects of Ag substitution and Ge substitution on the phase compositions, morphologies, optical bandgaps, minority carrier lifetime and device performance of kesterite Cu 2 ZnSn(S,Se) 4 thin films.
研究领域:
材料科学
·
光伏技术
·
薄膜技术
·
固体物理
·
半导体器件
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2024
·Vol. 12
·期 17
·10260-10268
·
IF 10.7
Yingfen Li,Xingye Chen,Runxi Wang,Nian Zhou,Fang Huang,Jun Zhao,Zhenghua Su,Shuo Chen,Guangxing Liang
In this study, Sb2S3 was introduced into the two-step selenization process to promote bottom grain growth and reduce the surface roughness of the Cu2ZnSn(S,Se)4 light-absorber layer. The introduction of Sb doping in Cu2ZnSn(S,Se)4 can passivate bulk and interface defects and a small conduction band offset (CBO) can be found, which facilitate the improvement of heterojunction carrier transport properties. Similarly, simulations illustrated that Sb doping improved device efficiency by controlling bulk and interface defects and band alignment. This optimized method facilitated the penetration of Sb, resulting in a high-quality CZTSSe absorber layer. Ultimately, the research culminated in a significant enhancement, yielding a solar cell with an impressive efficiency of 13.11%. These findings offer new possibilities for kesterite solar cells and advance the potential of CZTSSe materials in thin film photovoltaic applications.
研究领域:
材料科学
·
光伏技术
·
半导体物理
·
薄膜太阳能电池
·
无机功能材料
·
固态电子学
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）