Sustainable Energy & Fuels
·
2019
·Vol. 4
·期 4
·1621-1629
·
IF 4.912
Yachao Du,Qingwen Tian,Jin Huang,Yuechao Zhao,Xiaohuan Chang,Afei Zhang,Sixin Wu
Additional elements in Cu2ZnSn(S,Se)4 (CZTSSe) absorber layers present a viable strategy to improve the performance of thin film solar cells. In this study, heterovalent cation doping by partially substituting metal cations with Ga3+ is explored by constructing a sandwich-like configuration. We demonstrated that a low doping level of Ga3+ can be successfully incorporated into the host lattice of CZTSSe to form a homogeneous Cu2ZnSn(Ga) (S,Se)4 (CZTGSSe) alloy material. Characterization was performed using SEM, EDS, XRD, Raman spectroscopy, and XPS, which showed that the material fabricated by this heterovalent cation doping method expressed high phase purity, appropriate valence components, and suitable optical bandgap, which are vital for high performance solar cells. As a result, the champion device achieves stabilized efficiency as high as 10.80%, improved by nearly 28% compared with only 8.43% for the reference device.
研究领域:
材料科学
·
太阳能
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2024
·
IF 18.5
Yu Mao,Tao Wang,Yue Jian,Yuanyuan Huang,Yanmei Deng,Ening Gu,Xianzhong Lin,Guowei Yang
Inkjet printing is a promising and scalable drop-on-demand deposition technique for cost-effective mass production of thin film solar cells. However, the efficiency of inkjet-printed Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells based on dimethyl sulfoxide (DMSO) precursor ink is inferior to state-of-the-art spin-coated devices. Therefore, it is crucial to improve the efficiencies of inkjet-printed CZTSSe solar cells. In this work, inkjet printing technique is used to deposit flat and continuous CZTSSe thin films in ambient air using a novel 2-methoxyethanol-based ink that shows long-term stability in the air and better wettability compared to the conventional used DMSO-based ink. In addition, the effects of printing resolution on the structure, morphology, electrical and photovoltaic properties of CZTSSe light harvesting layer are investigated. Eventually, a remarkable device efficiency of 12.86% is achieved, surpassing the reported record efficiency for CZTSSe solar cells based on inkjet printing by ≈40%. Notably, this inkjet printing method allows for the significant reduction of preparation cost of CZTSSe thin films by improving the raw material utilization, thus paving a more viable pathway toward the sustainable development of CZTSSe solar cells.
研究领域:
材料科学
·
太阳能
·
纳米技术
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
Small Methods
·
2024
·
IF 10.7
Yue Jian,Litao Han,Xiangrui Kong,Tianliang Xie,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yuena Meng,Yafang Qi,Guangxing Liang,Xianghua Zhang,Zhi Zheng,Sixin Wu
High-crystalline-quality absorbers with fewer defects are crucial for further improvement of open-circuit voltage ( V OC ) and efficiency of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. However, the preparation of high-quality CZTSSe absorbers remains challenging due to the uncontrollability of the selenization reaction and the complexity of the required selenization environment for film growth. Herein, a novel segmented control strategy for the selenization environment, specifically targeting the evaporation area of Se, to regulate the selenization reactions and improve the absorber quality is proposed. The large evaporation area of Se in the initial stage of the selenization provides a great evaporation and diffusion flux for Se, which facilitates rapid phase transition reactions and enables the attainment of a single-layer thin film. The reduced evaporation area of Se in the later stage creates a soft-selenization environment for grain growth, effectively suppressing the loss of Sn and promoting element homogenization. Consequently, the mitigation of Sn-related deep-level defects on the surface and in the bulk induced by element imbalance is simultaneously achieved. This leads to a significant improvement in nonradiative recombination suppression and carrier collection enhancement, thereby enhancing the V OC . As a result, the CZTSSe device delivers an impressive efficiency of 13.77% with a low V OC deficit.
研究领域:
材料科学
·
太阳能
·
光伏技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
APPLIED SURFACE SCIENCE
·
2023
·
IF 6.7
Chengcheng Qi,Yuhua Luo,Yongping Dong
The study of single atoms in the field of electrochemical sensing is at the early stage. How to boost the catalytic performance of single atoms is still a big challenge. Herein, we prepare Fe-Se dual single-atom sites on N-doped ultrathin carbon carrier (Fe 1 Se 1 /NC) for realizing highly sensitive nonenzymatic detection of H 2 O 2 . Fe 1 Se 1 /NC was synthesized through the pyrolysis strategy, and then was characterized by transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) mapping, high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), and electrochemical techniques, respectively. The results displayed that Fe and Se both existed in an atomically dispersed status. Compared to the single-atom Se or Fe catalyst (Se 1 /NC or Fe 1 /NC), the Fe 1 Se 1 /NC significantly boosted the electrocatalytic activity for H 2 O 2 reduction. The Fe 1 Se 1 /NC modified electrode could be used to detect H 2 O 2 in a wide linear range of 0.02 mM to 13 mM with a high sensitivity of 1508.6 µA·mM −1 ·cm −2 and a low detection limit of 11.5 µM. Moreover, the sensor was successfully employed for detecting H 2 O 2 in disinfectant and urine samples. This work provides a novel design of dual-atom catalysts for excellent electrochemical sensing applications.
研究领域:
电化学
·
催化
·
材料科学
·
分析化学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2020
·
IF 6.155
Liquan Yao,Limei Lin,Hui Liu,Fengying Wu,Jianmin Li,Shuiyuan Chen,Zhigao Huang,Guilin Chen
Antimony chalcogenide Sb 2 (S, Se) 3 is attracting a lot of attention as photovoltaic absorber owing to its rewarding photoelectric properties, low toxicity, and earth abundance. However, its device efficiency is still limited by the absorber material quality and device interface recombination. In this work, a fluorine-doped tin oxide (FTO) substrate with ultra-thin SnO 2 layer and a low-cost stabilized carbon paste are introduced as a front and back contact layer respectively in Sb 2 (S, Se) 3 based planar solar cells. Over 5.2 % efficiency is demonstrated in the structure of FTO/SnO 2 /CdS/Sb 2 (S, Se) 3 /Carbon/Ag, where the Sb 2 (S, Se) 3 is prepared by hydrothermal technique. The complementary device physics characterizations reveal that the interfacial recombination between TCO and CdS is significantly suppressed by the introduction of ultra-thin SnO 2 layer, which is profited from the leakage protection and bandgap offset engineering by its high resistivity and suitable conduction band minimum. Meanwhile, the successful adoption of the low-cost stabilized carbon as a back contact here shows an enormous potential to replace the conventional organic hole transport materials and noble metal. We hope this work can provide positive guidance to optimize Sb 2 (S, Se) 3 based planar solar cells in the future.
研究领域:
材料科学
·
光伏技术
·
可再生能源
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2022
·Vol. 33
·期 8
·2211102
·
IF 19.924
Kai Huang,Chaoliang Lin,Guangqiang Yu,Peng Du,Xinyu Xie,Xian He,Zhichuan Zheng,Ning Sun,Haolin Tang,Xibo Li,Ming Lei,Hui Wu
The introduction of electronegative non-metallic heterostructures is promisingly desired to develop Ru-based oxide catalysts, which have higher activity and robust stability for acidic oxygen evolution reaction (OER). Developing scalable synthetic strategies and enlightening the mechanism understanding of the enhancement is imperative but still challenging. Herein, a facile selenium-assisted reduction approach is reported to fabricate the partially reduced nano-sized Ru with mixed-valence Se species immobilization, directly from commercial RuO 2 through ball milling and annealing procedures. The obtained Ru/Se-RuO 2 composites demonstrate superior electrocatalytic performance toward acidic OER with small overpotentials of 190 and 240 mV at 10 and 100 mA cm −2 , a Tafel slope of only 43.7 mV dec −1 , and no detectable activity decay under operation for 24 h. Experimental results further demonstrate a synergistic effect including enhanced electron transfer interaction by the formation of Ru/RuO 2 heterostructures and more available active sites due to Se doping. Theoretical calculations indicate that slight Se doping and metallic Ru loading can significantly decrease the free energy change for the formation of *OOH intermediate, and thus dramatically promotes the OER performance. This strategy offers a promising strategy for the development of non-metallic elements incorporated high-performance catalysts and related water electrocatalytic devices for sustainable energy applications.
研究领域:
电催化
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材料科学
·
能量转换
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纳米材料
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可持续能源
✓ 已验证
DOI
高影响因子
Journal of Energy Chemistry
·
2021
·
IF 9.676
Yueqing Deng,Zhengji Zhou,Xin Zhang,Lei Cao,Wenhui Zhou,Dongxing Kou,Yafang Qi,Shengjie Yuan,Zhi Zheng,Sixin Wu
The development of kesterite photovoltaic solar cells has been hindered by large open-circuit voltage ( V oc ) deficit. Recently, Sn Zn deep point defect and associative defect cluster have been recognized as the main culprit for the V oc losses. Therefore, manipulating the deep-level donor of Sn Zn antisite defects is crucial for breaking through the bottleneck of present Cu 2 ZnSn(S,Se) 4 (CZTSSe) photovoltaic technology. In this study, the Sn Zn deep traps in CZTSSe absorber layer are suppressed by incorporation of Ge. The energy levels and concentration of Sn Zn defects measured by deep-level transient spectroscopy (DLTS) decrease significantly. In addition, the grain growth of CZTSSe films is also promoted due to Ge implantation, yielding the high quality absorber layer. Consequently, the efficiency of CZTSSe solar cells increases from 9.15% to 11.48%, largely attributed to the 41 mV V oc increment.
研究领域:
材料科学
·
光伏技术
·
太阳能
✓ 已验证
DOI
高影响因子
Solar RRL
·
2024
·
IF 6
Chenxi Zhao,Bowen Liu,Fuyan Chen,Jiaxin Gao,Xinan Shi,Daocheng Pan
Cu(In, Ga)(S, Se) 2 (CIGSSe) solar cell is one of the most promising thin-film solar cells with a record power conversion efficiency (PCE) of 23.6%. Conventional CIGSSe thin-film solar cells are usually fabricated on Mo-coated soda-lime glass substrate, thereby, the sunlight on the rear side cannot be utilized by the monofacial CIGSSe solar cells owing to the opacity of the Mo electrode. CIGSSe solar cells fabricated on transparent conductive oxide (TCO) electrode enable to fabricate bifacial solar cells, which can generate power on both sides of solar cells, so that bifacial solar cells have a high potential application in building-integrated photovoltaics. However, the PCEs of CIGSSe solar cells fabricated on TCO substrates are significantly lower than those of ones on Mo substrates. In this article, bifacial CIGSSe solar cells on fluorine-doped tin oxide (FTO) substrate are fabricated by using an ionic liquid-assisted solution approach and utilizing a MoO 3 thin film as an interface layer between FTO and CIGSSe absorber layer, yielding a front-side PCE of 9.73% and a back-side PCE of 1.77%.
研究领域:
材料科学
·
光伏技术
·
可再生能源
✓ 已验证
产品关联
DOI
高影响因子
APPLIED CATALYSIS B-ENVIRONMENTAL
·
2025
·
IF 21.1
Ziwei Ma,Jingyi Wang,Wei Wang,Xueyi Song,Yating Liu,Shaobin Wang,Yunjin Yao
We engineered a NiSe/Ni₃Se₂ heterostructure on nickel foam that activates formic acid for rapid hexavalent chromium detoxification. We used one-step hydrothermal growth and probed structure and mechanism by diffraction and spectroscopy, electron microscopy, electron paramagnetic resonance with 5,5-dimethyl-1-pyrroline N-oxide, and batch and fixed-bed tests. The optimized catalyst removed 99.7% of 50 mg L⁻¹ hexavalent chromium in 40 minutes at 25 °C, achieved full removal of 1 mg L⁻¹ in 20 minutes, tolerated common ions, and maintained 100% removal for 180 h in continuous flow. Mechanistic analyses show a radical pathway dominated by hydrogen radicals (H ⁎ ) and carbon dioxide radical anions ( C O 2 • − ), promoted by selenium vacancies and tightly coupled nickel selenide interfaces that accelerate formic-acid activation and interfacial charge transfer. Operating without external energy input, this monolithic architecture avoids powder recovery and minimizes pressure drop and cost, offering a general route to defect-engineered selenides for efficient, low-cost environmental redox remediation.
研究领域:
环境化学
·
催化
·
材料科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2025
·
IF 9.5
Yuting Sun,Bin Yao,Yuhong Jiang,Yongfeng Li,Xiaobo Du,Zhanhui Ding,Jiayong Zhang,Chunkai Wang,Ding Ma,Mengge Li,Yan Zhu,Xiaofei Sun,Ning Ding,Liyuan Shi
It is well known that the improvement of crystal quality and photoelectric properties of Cu2ZnSn(S,Se)4 (CZTSSe) is one of the key issues in enhancing power conversion efficiency (PCE). To resolve this problem, we selected Li2CO3 as a Li source to prepare Li-doped CZTSSe by annealing Li-doped Cu2ZnSnS4 (CZTS) precursor films in air, followed by selenization (CZTSSe-Li-A). It is interesting that the air annealing leads to the incorporation of Li and O into CZTSSe in the form of Li-O pairs, which improves the crystal quality and absorption coefficient (α) of CZTSSe-Li-A and decreases its hole concentration and resistivity compared with Li-doped CZTSSe prepared using Li-doped CZTS that is not annealed in air (CZTSSe-Li). By optimizing Li doping concentration, annealing temperature and time, the highest PCE of CZTSSe-Li-A solar cell without MgF anti-reflection layer reaches 11.13%, which is larger than the highest PCE of CZTSSe-Li solar cell (10.21%). Quantitative analysis indicates that the increased PCE of CZTSSe-Li-A solar cell compared to CZTSSe-Li solar cell is mainly attributed to the decrease in reverse saturation current density (J0) and series resistance (Rs) caused by thermal effect of the air annealing, followed by an increase in photogeneration density (JL) and shunt resistance (Rsh). The decreased J0 is due to a reduction in interfacial defect density, increased JL is due to increase in α and depletion region width, and decreased Rs and increased Rsh are due to improve crystal quality. This work offers a route for the improvement of PCE of CZTSSe solar cells.
研究领域:
材料科学
·
光伏技术
·
薄膜技术
·
固体物理
✓ 已验证
产品关联
DOI
高影响因子
Journal of Energy Chemistry
·
2024
·
IF 14
Shicheng Deng,Songfan Wang,Yuanyuan Wang,Qian Xiao,Yuena Meng,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Zhi Zheng,Sixin Wu
Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells suffer from severe carrier recombination, limiting the photovoltaic performance. Unfavorable energy band alignment at the p-n junction and defective front interface are two main causes. Herein, oxygen incorporation in CZTSSe via absorber air-annealing was developed as a strategy to optimize its surface photoelectric property and reduce the defects. With optimized oxygen incorporation conditions, the carrier separation and collection behavior at the front interface of the device is improved. In particular, it is found that oxygen incorporated absorber exhibits increased band bending, larger depletion region width, and suppressed absorber defects. These indicate the dynamic factors for carrier separation become stronger. Meanwhile, the increased potential difference between grain boundaries and intra grains combined with the decreased concentration of interface deep level defect in the absorber provide a better path for carrier transport. As a consequence, the champion efficiency of CZTSSe solar cells has been improved from 9.74% to 12.04% with significantly improved open-circuit voltage after optimized air-annealing condition. This work provides a new insight for interface engineering to improve the photoelectric conversion efficiency of CZTSSe devices.
研究领域:
材料科学
·
太阳能
·
半导体物理
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2021
·
IF 8.128
Jinxin Wei,Zhe Hu,Wenjie Zhou,Yi Qiu,Hanqing Dai,Yuanyuan Chen,Zhongjie Cui,Siyu Liu,Haiyang He,Wanlu Zhang,Fengxian Xie,Ruiqian Guo
With the blooming development of zero-dimensional nanomaterials , I-III-VI alloying quantum dots (QDs) with outstanding photoelectrical properties have emerged to attract much attention as promising environmentally-friendly substitutions for conventional binary Cd-based QDs. In this work, a facile one-pot method was introduced to synthesize unreported quaternary Ag-Cu-Ga-Se/ZnSe (ACGSe/ZnSe) QDs. A relatively high photoluminescence quantum yield (PL QY) of 71.9% and a tunable emission from 510 to 620 nm were successfully achieved. We explored the roles of alloying compositions in ACGSe/ZnSe QDs, inferring that increased Ag proportion would not only lower the V defect level which leads to the blue shift of emission, but also slow the ZnSe shelling process owing to the larger lattice distortion. At last, the white light-emitting diodes (WLEDs) were fabricated with ACGSe/ZnSe QDs as the conversion layer, indicating that the as-prepared QDs are a promising candidate for further applications.
研究领域:
材料科学
·
纳米技术
·
光电技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）