Journal of Materiomics
·
2023
·
IF 9.4
Sitong Wei,Zhen Ji,Wenhao Li,Shuqi Zheng,Qing Wang,Zhiliang Li,Lu Yu,Sitong Luo,Weiyu Song
Cu 3 SbSe 4 , a copper-based sulfide free of rare earth elements, has received extensive attention in thermoelectric materials. However, its low carrier concentration restricts its widespread application. In this study, a microwave-assisted solution synthesis method was used to produce samples of Cu 3 SbSe 4 , which enabled the formation of CuSe in situ and increased the yield. Through the use of first-principles calculations, structural analysis, and performance evaluation, it was found that CuSe can enhance the carrier concentration and that induced nano-defects have a positive effect on reducing the lattice thermal conductivity. Moreover, doping with Sn decreases the band gap of the system and moves the Fermi level into the valence band, increasing the carrier concentration to 1.15 × 10 −20 cm −3 . Finally, the zT value of the Cu 3 Sb 0.98 Sn 0.02 Se 4 sample was achieved at 1.05 at 623 K when the theoretical yield of a single synthesis was 10 mmol.
研究领域:
材料科学
·
热电学
·
固体物理
✓ 已验证
产品关联
DOI
高影响因子
SCRIPTA MATERIALIA
·
2024
·
IF 5.3
Chengjun Li,Yubo Luo,Wang Li,Linhan Yang,Wenyuan Ma,Zheng Ma,Chengwei Sun,Boyu Yang,Yingchao Wei,Xin Li,Junyou Yang
We report here a high thermoelectric performance in magnesium (Mg) doped Sb 2 Si 2 Te 6 . The substitution of Mg 2+ for Sb 3+ in Sb 2 Si 2 Te 6 induces a synergetic effect on electrical transport performance, exciting multi-band carrier transport behavior, enhancing carrier concentration, and increasing the density of states effective mass. Such effects lead to the highest power factor of 10.95 μW cm −1 K −2 at 824 K for the Sb 1.99 Mg 0.01 Si 2 Te 6 , representing a ∼22 % increase compared to pristine Sb 2 Si 2 Te 6 . In addition, Mg doping induces Mg Sb − point defects phonon scattering, resulting in a low thermal conductivity of ∼0.52 W m −1 K −1 at 824 K. The simultaneous optimization of the power factor and thermal conductivity in Sb 1.99 Mg 0.01 Si 2 Te 6 leads to a peak ZT of ∼1.15 at 824 K and an average ZT of ∼0.68 (400−824 K), showing its potential for power generator at medium temperature.
研究领域:
材料科学
·
热电学
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固体物理学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2025
·
IF 9.5
Hanqian Li,Bangzhi Ge,Wenqi Xie,Ruoyan Li,Chao Li,Wanqi Jie,Dongxu Zhang,Yi Qin,Yuan Yu,Chongjian Zhou
Liquid-like thermoelectric materials continuously draw significant attention because of their extraordinary performance. However, liquid-like Cu atoms usually aggregate into clusters, resulting in charge carrier concentration far above the optimized value. Herein, we demonstrate that the dynamic Cu atoms can be homogenized throughout the matrix by a phase-dependent diffusion process. We directly visulized that the typical equilibrium process periodically aggregates Cu atoms into clusters along the grain boundaries, leaving abundant vacancies within the dynamic cation sublattice and thereby causing carrier concentrations that are much higher than the optimal value. We developed a solid-state non-equilibrium quenching process to freeze the homogeneous Cu sublattice in the symmetry cubic phase to ambient environment and removed the unfavorable Cu segregation. This substantially decreases the hole concentration from 1.2 × 1022 cm−3 for the equilibrium sample to 0.8 × 1022 cm-3 for the quenched sample, approaching the calculated optimal value. Notably, the highly uniform Cu sublattice reduces the lattice thermal conductivity to predicted minima of 0.3 W·m−1·K−1 from 300 to 1000 K. The reduced hole concentration and lattice thermal conductivity collectively give rise to a high ZT value of 1.5 at 1000 K, lying in the ballpark of all previously reported stoichiometric copper chalcogenides.
研究领域:
材料科学
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凝聚态物理
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纳米技术
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固体化学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2025
·
IF 5.5
Zhengshuai Cao,Mu Li,Li Shan,Mingshang Liu,Wenming Li
SnTe is an environmentally friendly and promising alternative thermoelectric material in contrast to harmful PbTe. However, the long-lasting high lattice thermal conductivity significantly inhibits the further enhancement of the thermoelectric figure of merit ZT. Herein, this study proposed a strategy of solvothermal copper doping to considerably reduce the lattice thermal conductivity by introducing multiscale hierarchical structures. The structural and morphological characterizations indicate that Cu was doped as interstitial atoms and secondary-phase Cu1.80Te. Simultaneously, this study reveals that Cu1.80Te and the SnTe matrix stem from nanoparticles and octahedral structures, respectively. In the sintered bulks, phonon scattering was significantly increased owing to the abundant micro/nanopores, Cu1.80Te nanoprecipitates, grain boundaries of SnTe, and phase boundaries between Cu1.80Te and SnTe. The increased phonon scattering leads to a lattice thermal conductivity of ∼0.36 W m–1 K–1 at 773 K, which is lower than that of pristine SnTe. Benefiting from this substantially decreased thermal conductivity, a ZT value of ∼0.91 was achieved in Sn0.98Cu0.02Te. The enhancement is ∼300% over pristine SnTe. This work provides an effective method to fabricate high-performance energy-effective SnTe-based thermoelectric materials.
研究领域:
材料科学
·
热电材料
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固体物理
·
能源材料
✓ 已验证
产品关联
DOI
高影响因子
Nature Communications
·
2023
·Vol. 14
·期 1
·1-9
·
IF 16.6
Zhou Zhifang,Huang Yi,Wei Bin,Yang Yueyang,Yu Dehong,Zheng Yunpeng,He Dongsheng,Zhang Wenyu,Zou Mingchu,Lan Jin-Le,He Jiaqing,Nan Ce-Wen,Lin Yuan-Hua
Thermoelectric materials can realize direct conversion between heat and electricity, showing excellent potential for waste heat recovery. Cu 2 Se is a typical superionic conductor thermoelectric material having extraordinary ZT values, but its superionic feature causes poor service stability and low mobility. Here, we reported a fast preparation method of self-propagating high-temperature synthesis to realize in situ compositing of BiCuSeO and Cu 2 Se to optimize the service stability. Additionally, using the interface design by introducing graphene in these composites, the carrier mobility could be obviously enhanced, and the strong phonon scatterings could lead to lower lattice thermal conductivity. Ultimately, the Cu 2 Se-BiCuSeO-graphene composites presented excellent thermoelectric properties with a ZT max value of ~2.82 at 1000 K and a ZT ave value of ~1.73 from 473 K to 1000 K. This work provides a facile and effective strategy to largely improve the performance of Cu 2 Se-based thermoelectric materials, which could be further adopted in other thermoelectric systems.
研究领域:
材料科学
·
热电材料
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能源材料
✓ 已验证
DOI
PubMed
高影响因子
NATURE MATERIALS
·
2024
·Vol. 23
·期 4
·527-534
·
IF 37.2
Hu Haihua,Ju Yiwei,Yu Jincheng,Wang Zechao,Pei Jun,Thong Hao-Cheng,Li Jing-Wei,Cai Bowen,Liu Fengming,Han Zhanran,Su Bin,Zhuang Hua-Lu,Jiang Yilin,Li Hezhang,Li Qian,Zhao Huijuan,Zhang Bo-Ping,Zhu Jing,Li Jing-Feng
The liquid-like feature of thermoelectric superionic conductors is a double-edged sword: the long-range migration of ions hinders the phonon transport, but their directional segregation greatly impairs the service stability. We report the synergetic enhancement in figure of merit (ZT) and stability in Cu 1.99 Se-based superionic conductors enabled by ion confinement effects. Guided by density functional theory and nudged elastic band simulations, we elevated the activation energy to restrict ion migrations through a cation–anion co-doping strategy. We reduced the carrier concentration without sacrificing the low thermal conductivity, obtaining a ZT of ∼ 3.0 at 1,050 K. Notably, the fabricated device module maintained a high conversion efficiency of up to ∼ 13.4% for a temperature difference of 518 K without obvious degradation after 120 cycles. Our work could be generalized to develop electrically and thermally robust functional materials with ionic migration characteristics.
研究领域:
材料科学
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热电学
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固体物理
✓ 已验证
DOI
高影响因子
APL Materials
·
2018
·Vol. 6
·期 3
·
IF 4.127
Sun Min,Qian Qi,Tang Guowu,Liu Wangwang,Qian Guoquan,Shi Zhenguo,Huang Kaimin,Chen Dongdan,Xu Shanhui,Yang Zhongmin
Bi 2 Te 3 -based materials have been reported to be one of the best room-temperature thermoelectric materials, and it is a challenge to substantially improve their thermoelectric properties. Here novel Bi 2 Te 3 core fibers with borosilicate glass cladding were fabricated utilizing a modified molten core drawing method. The Bi 2 Te 3 core of the fiber was found to consist of hexagonal polycrystalline nanosheets, and polycrystalline nanosheets had a preferential orientation; in other words, the hexagonal Bi 2 Te 3 lamellar cleavage more tended to be parallel to the symmetry axis of the fibers. Compared with a homemade 3-mm-diameter Bi 2 Te 3 rod, the polycrystalline nanosheets’ preferential orientation in the 89- μ m-diameter Bi 2 Te 3 core increased its electrical conductivity, but deduced its Seebeck coefficient. The Bi 2 Te 3 core exhibits an ultrahigh ZT of 0.73 at 300 K, which is 232% higher than that of the Bi 2 Te 3 rod. The demonstration of fibers with oriented nano-polycrystalline core and the integration with an efficient fabrication technique will pave the way for the fabrication of high-performance thermoelectric fibers.
研究领域:
材料科学
·
热电学
·
纳米材料
·
光纤技术
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Physics
·
2023
·
IF 11.5
Sitong Wei,Lu Yu,Zipei Zhang,Zhen Ji,Sitong Luo,Jingxuan Liang,Weiyu Song,Shuqi Zheng
Cu 3 SbSe 4 -based thermoelectric materials , known for their complex crystal structure and splendid Seebeck coefficient , have garnered significant attention. However, a major challenge in this field is further enhancing the thermoelectric performance while effectively controlling the carrier concentration. In this work, a novel doping strategy is proposed to effectively adjust the energy band structure by Mn doping while simultaneously increasing the carrier concentration and the effective mass of the density of states , thereby optimizing the power factor. Additionally, Sn doping is employed to boost the carrier concentration significantly while strengthening the covalent bonds , thereby improving the samples’ stability. As a result, the Cu 3 Sb 0.92 Mn 0.06 Sn 0.02 Se 4 sample achieves a zT value of 0.74 at 673 K. Moreover, the Cu 3 Sb 0.93 Mn 0.06 Sn 0.01 Se 4 sample exhibits an average zT value of 0.39 within the temperature range of 273–675 K. This research sheds light on an approach for designing high-performance Cu 3 SbSe 4 -based thermoelectric materials by manipulating the carrier concentration and enhancing the covalent bond strength through doping.
研究领域:
材料科学
·
热电学
·
固体物理学
·
化学
✓ 已验证
产品关联
DOI
高影响因子
Small
·
2024
·Vol. 20
·期 32
·2312003
·
IF 13
Mohammad Nisar,Adeel Abbas,Junze Zhang,Fu Li,Zhuanghao Zheng,Guangxing Liang,Ping Fan,Yue-Xing Chen
Enhancing the thermoelectric performance of n-type polycrystalline SnSe is essential, addressing challenges posed by elevated thermal conductivity and compromised power factor inherent in its intrinsic p-type characteristics. This investigation utilized solid-state reactions and spark plasma sintering techniques for the synthesis of n-type SnSe. A significant improvement in the figure of merit (ZT) is achieved through strategic reduction in Se concentration and optimization of crystal orientation. The co-doping with Br and Ge further improves the material; Br amplifies carrier concentration, enhancing electrical conductivity, while Ge introduces effective phonon scattering centers. In the Br/Ge co-doped SnSe sample, thermal conductivity dropped to 0.38 Wm⁻¹K⁻¹, yielding a remarkable power factor of 662 µW mK − 2 at 773 K, culminating in a ZT of 1.34. This signifies a noteworthy 605% improvement over the pristine sample, underscoring the pivotal role of Ge doping in enhancing n-type material thermoelectric properties. The enhancement is attributed to Br doping introducing additional electronic states near the valence band, and Ge doping modifying the band structure, fostering resonant states near the conduction band. The Br/Ge co-doping further transforms the band structure, influencing electrical conductivity, Seebeck coefficient, and thermal conductivity, advancing the understanding and application of n-type SnSe materials for superior thermoelectric performance.
研究领域:
材料科学
·
热电材料
·
固体物理
·
凝聚态物理
✓ 已验证
DOI
高影响因子
Advanced Energy Materials
·
2025
·
IF 26
Yao Wang,Jianrui Wang,Xiao Xu,Yan Wang,Baohai Jia,Shangyang Li,Kornelius Nielsch,Jiaqing He
The excellent performance of skutterudites is related to the interrelated filling fraction and doping limitation of the intricate matrix. Especially for the investigation of n-type electronegatively filling samples, the exceptionally low doping capacity at Sb sites leads to severely compromised thermoelectric performance. Here, a breakthrough is achieved in surpassing conventional doping limits by developing a novel “electrical compensation-bonding modulation” method, contributing to the reconfiguration of the unique X 4 ring structure (Consists of Sb 4 units) in S 0.2 Se 0.05 Co 4 Sb 12-x Te x skutterudites. The modulated bond hierarchy and disorder enable a concurrent regulation of phonon and carrier transport, resulting in a significant improvement of the transport properties. Building upon this foundation, a revolutionary off-center state has been introduced to the matrix via continuous doping of Se at Sb sites, aimed at suppressing the lattice thermal conductivity. Ultimately, a peak zT of 1.8 at 800 K is achieved, with an average zT of 1.1 across the 300–800 K temperature range. This work provides a universal approach to overcome doping limits in Co 4 Sb 12 -based thermoelectrics.
研究领域:
材料科学
·
热电学
·
固态化学
·
能源材料
✓ 已验证
产品关联
DOI
高影响因子
Joule
·
2024
·
IF 38.6
Hailong Yang,Baohai Jia,Lin Xie,Dasha Mao,Junchao Xia,Jianmin Yang,Minhui Yuan,Quan Gan,Xusheng Liu,Mingyuan Hu,Jing Shuai,Jiaqing He
Beyond phonon transport, non-propagating transport is also crucial for crystals to achieve ultra-low lattice thermal conductivity (κ L ) approaching the amorphous limitation. In our study, the demonstrated enhancement of phonon localization proves instrumental in achieving ultra-low κ L , offering an understanding of the role of non-propagating transport. We experimentally verified this principle through a meticulously designed vapor-liquid-solid reaction in Mg 3 (Sb,Bi) 2 -based materials. A remarkably low κ L of 0.19 W/mK at room temperature was obtained. This marked a 77% reduction, compared with full-density counterparts, and was attributed to enhanced localization involved in high-frequency phonons. Moreover, we achieved a record zT value close to 1.2 at room temperature, along with the highest average zT value of 1.6 from 300 to 573 K among all n-type materials. These remarkable results align precisely with electron-phonon decoupling through strengthening phonon localization for materials design and application, which underscores the pivotal role in thermal transport.
研究领域:
材料科学
·
热电学
·
固体物理学
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2021
·Vol. 31
·期 30
·2103197
·
IF 18.808
Zheng Ma,Tian Xu,Wang Li,Yiming Cheng,Jinmeng Li,Dan Zhang,Qinghui Jiang,Yubo Luo,Junyou Yang
A new p-type high entropy semiconductor AgMnGeSbTe 4 with a band gap of ≈0.28 eV is reported as a promising thermoelectric material. AgMnGeSbTe 4 crystallizes in the rock-salt NaCl structure with cations Ag, Mn, Ge, and Sb randomly disordered over the Na site. Thus, a strong lattice distortion forms from the large difference in the atomic radii of Ag, Mn, Ge, and Sb, resulting in a low lattice thermal conductivity of 0.54 W m −1 K −1 at 600 K. In addition, the AgMnGeSbTe 4 exhibits a degenerate semiconductor behavior and a large average power factor of 10.36 µW cm −1 K −2 in the temperature range of 400–773 K. As a consequence, the AgMnGeSbTe 4 has a peak figure of merit ( ZT ) of 1.05 at 773 K and a desirable average ZT value of 0.84 in the temperature range of 400–773 K. Moreover, the thermoelectric performance of AgMnGeSbTe 4 can be further enhanced by precipitating of Ag 8 GeTe 6 , which acts as extra scatting centers for holes with low energy and phonons with medium wavelength. The simultaneous optimization in power factor and lattice thermal conductivity yields a peak ZT of 1.27 at 773 K and an average ZT of 0.92 (400–773 K) in AgMnGeSbTe 4 -1 mol% Ag 8 GeTe 6 .
研究领域:
材料科学
·
热电学
·
固态化学
·
能量转换材料
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）