Solar RRL
·
2023
·Vol. 7
·期 13
·2300185
·
IF 7.9
Boyang Han,Yanping Song,Huanhuan Sun,Junjie Ma,Rensheng Wang,Xinlong Fan,Dan Chi,Xiuqing Meng,Shihua Huang,Bin Yao
As compared to the predecessor Cu(In,Ga)Se 2 device, the current efficiency of kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells is still much lower mainly due to the known carriers recombination issue within interface and absorber bulk. In contrast to the majority of researches concerning recombination issues that focus on either single absorber bulk or interface passivation strategy, this study is pioneering in constructing synergistic passivation effects (SPE) to address the bulk and interface recombination issue simultaneously. By introducing a novel niobium pentoxide passivation layer into the back electrode interface (BEI), it is identified that SPE can be constructed due to Nb (& O) diffusion from Nb 2 O 5 layer to absorber bulk and BEI during high-temperature selenization. The chemical passivation effect is fulfilled via the intrinsic high resistance characteristic of Nb 2 O 5 layer, and also through the NbO x passivation aiming to absorber bulk benefited from Nb (& O) diffusion. Meanwhile, the occupations of Nb (& O) on the Mo (& Se) sites induce a conduction type inversion in MoSe 2 interfacial layer and create a preferable interface p + -Mo(Se,O) 2 :Nb/CZTSSe, achieving an interfacial field passivation effect. Ultimately, the promoted absorber quality and improved charge carrier transportation from SPE contribute to the boost of device performance beyond 10% efficiency.
研究领域:
材料科学
·
可再生能源
·
太阳能电池技术
·
半导体物理
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2025
·
IF 6.3
Jingyuan Guo,Letu Siqin,Yufei Li,Wenbo Li,Ruijian Liu,Hongmei Luan,Chengjun Zhu
The band alignment of Cu 2 ZnSn(S,Se) 4 (CZTSSe)/CdS(In) in novel CZTSSe solar cells without a ZnO window layer has been initially investigated in our previous studies. However, the In content of CdS(In) diffused into the absorber is low, and the ability to regulate the band arrangement is limited. In this work, we employ In-ion-doped absorbers to adjust defects. However, this approach leads to a significant loss in short-circuit current density (Jsc). To address this, Cd is introduced to enhance Jsc through grain growth promotion and morphological improvement, thereby offsetting the Jsc loss induced by In doping. The co-doping of In and Cd reduces the conduction band offset (CBO) from 0.28 eV to 0.21 eV, thereby inhibiting carrier recombination and enhancing transport efficiency. Additionally, the concentration of bulk defects is reduced by an order of magnitude. As a result, the fill factor (FF) increased from 56.97 % to 60.08 %, Jsc increased from 37.10 mA/cm 2 to 38.66 mA/cm 2 , and open-circuit voltage (Voc) increased from 431.64 mV to 440.48 mV. Finally, the power conversion efficiency (PCE) of CZTSSe solar cell is enhanced to 10.23 %.
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产品关联
DOI
高影响因子
Sustainable Energy & Fuels
·
2019
·Vol. 4
·期 4
·1621-1629
·
IF 4.912
Yachao Du,Qingwen Tian,Jin Huang,Yuechao Zhao,Xiaohuan Chang,Afei Zhang,Sixin Wu
Additional elements in Cu2ZnSn(S,Se)4 (CZTSSe) absorber layers present a viable strategy to improve the performance of thin film solar cells. In this study, heterovalent cation doping by partially substituting metal cations with Ga3+ is explored by constructing a sandwich-like configuration. We demonstrated that a low doping level of Ga3+ can be successfully incorporated into the host lattice of CZTSSe to form a homogeneous Cu2ZnSn(Ga) (S,Se)4 (CZTGSSe) alloy material. Characterization was performed using SEM, EDS, XRD, Raman spectroscopy, and XPS, which showed that the material fabricated by this heterovalent cation doping method expressed high phase purity, appropriate valence components, and suitable optical bandgap, which are vital for high performance solar cells. As a result, the champion device achieves stabilized efficiency as high as 10.80%, improved by nearly 28% compared with only 8.43% for the reference device.
研究领域:
材料科学
·
太阳能
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2020
·Vol. 8
·期 42
·22292-22301
·
IF 11.301
Junjie Fu,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yafang Qi,Sixin Wu
A major obstacle hindering further development of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is the inherent recombination losses that occur both via bulk defects and charge extraction interfaces. Herein, we propose a generic Ag, Ge dual-gradient absorber architecture, involving a downshift of absorber VBM at the front contact and an upshift of absorber CBM at the back contact, to improve device performance. We experimentally show that the substitution of Cu by Ag allows for larger band bending at the p–n junction, and the substitution of Sn by Ge imposes an additional drift field within the quasi-neutral region. Additionally, the Ag and Ge ions diffusing into the bulk absorber passivate the deleterious CuZn and CuSn deep-level defects. In turn, accelerated charge extraction, transport and minimized recombination loss offered surprising gains in Voc and Jsc, and the dual-gradient device achieved a maximum efficiency of 12.26% with an improved Voc,deficit of 553 mV. This Ag, Ge graded-substitution approach offers an alternative absorber architecture to improve the Voc,deficit in future high-efficiency kesterite PV cells.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
DOI
高影响因子
Journal of Energy Chemistry
·
2022
·
IF 13.599
Licheng Lou,Yuancai Gong,Jiazheng Zhou,Jinlin Wang,Xiao Xu,Kang Yin,Biwen Duan,Huijue Wu,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng
Photo-generated carrier recombination loss at the CZTSSe/CdS front interface is a key issue to the open-circuit voltage ( V OC ) deficit of Cu 2 ZnSnS x Se 4− x (CZTSSe) solar cells. Here, by the aid of an easy-handling spin-coating method, a thin PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) layer as an electron extraction layer has been introduced on the top of CdS buffer layer to modify CZTSSe/CdS/ZnO-ITO (In 2 O 3 :Sn) interfacial properties. Based on Sn 4+ /DMSO (dimethyl sulfoxide) solution system, a total-area efficiency of 12.87% with a V OC of 529 mV has been achieved. A comprehensive investigation on the influence of PCBM layer on carrier extraction, transportation and recombination processes has been carried out. It is found that the PCBM layer can smooth over the CdS film roughness, thus beneficial for a dense and flat window layer. Furthermore, this CZTSSe/CdS/PCBM heterostructure can accelerate carrier separation and extraction and block holes from the front interface as well, which is mainly ascribed to the downward band bending of the absorber and a widened space charge region. Our work provides a feasible way to improve the front interfacial property and the cell performance of CZTSSe solar cells by the aid of organic interfacial materials.
研究领域:
材料科学
·
太阳能
·
光伏技术
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产品关联
DOI
高影响因子
Nature Energy
·
2025
·
IF 60.1
Wang Jinlin,Meng Fanqi,Lou Licheng,Yin Kang,Xu Xiao,Jiao Menghan,Zhang Bowen,Li Yiming,Shi Jiangjian,Wu Huijue,Luo Yanhong,Li Dongmei,Meng Qingbo
Atomic disorder is a widespread issue in multi-element crystalline materials and poses a critical challenge to the performance of Cu 2 ZnSn(S, Se) 4 (CZTSSe) photovoltaic devices. In particular, Cu–Zn disorder is prevalent in CZTSSe due to its low formation energy, leading to the formation of high-concentration deep defects and severe charge loss. The regulation of this disorder remains challenging because of the trade-off between the thermodynamics of the disorder–order phase transition and the kinetics of atom interchange. Here we introduce additional vacancy defects at the CZTSSe surface via magnesium doping to reduce the energy barrier for atom interchange. This vacancy-assisted approach enhances the kinetics of Cu–Zn ordering, thereby reducing charge loss in the device. As a result, we achieve a power conversion efficiency of 14.9% certified by the Chinese National PV Industry Measurement and Testing Center in CZTSSe solar cells, marking an advancement in the development of emerging inorganic thin-film photovoltaics.
研究领域:
光伏技术
·
材料科学
·
半导体物理
·
薄膜技术
·
无机电子学
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产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2020
·Vol. 9
·期 1
·413-422
·
IF 11.301
Xiaohuan Chang,Junjie Fu,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yafang Qi,Zhi Zheng,Sixin Wu
The introduction of alkali metal (AM) post-deposition treatment (PDT) has led to the consecutive breakthrough of world record efficiencies for Cu(In,Ga)Se2 photovoltaics. However, for the derivative Cu2SnZn(S,Se)4 (CZTSSe) solar cells, the corresponding verdict seems partially unjustified due to the difference in defect chemical environment and phase structure, and the most effective incorporation means of AMs is still a mystery. In this work, for the first time, we developed a dual AM synergistic incorporation strategy combining light and heavy AMs by post-depositing CsF after NaF-PDT to improve the efficiency of CZTSSe solar cells. The relevant microscopic-electrical advantages with regard to the different roles of NaF and CsF PDT are discussed in more detail. It was found that the Na atoms are randomly dispersed both in the grain interior (GI) and grain boundaries (GBs), significantly increasing the acceptor concentration and passivating the deep level defects to enhance the Voc. In contrast, the Cs atoms are mainly segregated at the GBs, primarily increasing the potential of the GBs and improving the FF. The prominent electric benefits of Cs at the GBs and Na in the GI finally increase the device efficiency from 10.12% to 12.16%. Our findings solve the difficulty in obtaining the available Voc and FF for future high efficiency research and should serve as a basis for the in-depth understanding of AM-PDT in kesterite photovoltaics.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Solar RRL
·
2019
·Vol. 3
·期 10
·1900131
·
IF 0
Afei Zhang,Zhengji Zhou,Wenhui Zhou,Dongxing Kou,Yuena Meng,Yafang Qi,Shengjie Yuan,Sixin Wu
A back contact interface in a kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) photovoltaic device plays an important role in fabricating high quality semiconducting photoactive layers and improving carrier extraction efficiency. However, uncontrolled decomposition reactions between the CZTSSe absorber layer and Mo electrode result in high series resistance and recombination at the back interface. The insertion of high work function MoO 3 as an interfacial layer is considered as a promising way to engineer the back contact. This highlights the importance of elucidating the chemistry and dynamics of MoO 3 at the Mo/kesterite interface in the CZTSSe annealing process. Herein, A detailed investigation of the elemental diffusion and chemistry of the back contact with the MoO 3 intermediate layer during selenization is carried out. The results demonstrate that the presence of the MoO 3 interfacial layer largely suppresses the chemical reaction between Mo and CZTSSe in the annealing process, inducing high quality CZTSSe absorbing films with fewer voids and reducing the thickness of MoSe 2 from 209 to 84 nm when the optimized thickness of MoO 3 is 10 nm. This finally leads to the increase in device efficiency from 9.02% to 10.92%, and the best performance where an efficiency of 11.37% is achieved.
研究领域:
材料科学
·
光伏技术
·
半导体物理
·
太阳能电池技术
✓ 已验证
产品关联
DOI
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Fengxia Yang,Hao Sun,Xiang Zhang,Dandan Chen,Jianbiao Chen,Xuqiang Zhang,Jiangtao Chen,Yun Zhao,Yan Li
Self-rectifying optoelectronic synaptic memristor integrates the multi-field regulated dynamic plasticity of biological synapses while effectively addressing the long-standing challenge of parasitic current suppression in high-density device arrays. This work demonstrates an Ag/CZTSSe/Mo (CZTSSe: Cu 2 ZnSn(S, Se) 4 ) optoelectronic synaptic memristor enabling reversible switching between bipolar resistive switching and self-rectifying modes, thus functioning simultaneously as a selector and memristor. The non-volatile bipolar switching behavior features bias-modulated On/Off ratio (2.2 × 10 2 –5.1 × 10 3 ) and a near-infrared light-tunable reset voltage (0.52–0.06 V), while the self-rectifying characteristic maintains a rectification ratio of >10 3 over 100 switching cycles. Under either electrical or light (470–980 nm) stimuli, the memristor emulates key artificial synaptic behaviors, including excitatory postsynaptic current, paired-pulse facilitation, long-term potentiation/depression, spike-timing-dependent plasticity, and short-to-long-term memory (S/LTM) transitions. Notably, its realized applications, including 1) reset-dominated unclonable security encryption, 2) visible-light vision imaging to near-infrared weak-signal detection, and 3) envelope demodulation of amplitude-modulated signals for long-distance high-accuracy data transmission, highlight its cross-disciplinary advantages in neuromorphic computing.
研究领域:
神经形态计算
·
光电子学
·
忆阻器技术
·
电阻开关
·
人工突触
·
纳米电子学
·
信息安全
·
信号处理
·
传感器与成像
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DOI
高影响因子
危险品化学品经营许可证（带存储）