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CsPbI3
Journal of Physical Chemistry C · 2022 · IF 4.177

Phase Regulation and Surface Passivation of Stable α-CsPbI3 Nanocrystals with Dual-Mode Luminescence via Synergistic Effects of Ligands

Xueying Chen,Yeqing Chen,Jie Huang,Chen Li,Zongming Ni,Kang Zhang,Mingxuan Cao,Ting Yu,Yan Chen,Xin He,Yang Li

Cubic-phase CsPbI3 perovskite nanocrystals (CsPbI3 NCs) are widely used as a promising luminescent material in optical devices such as light-emitting diodes and lasers due to their high photoluminescence quantum efficiency and excellent color purities. However, the CsPbI3 lattice is more likely to face the problem of phase transformation due to the poor thermodynamic stability, which would lead to the decrease of its photoluminescence quantum efficiency. In this work, α-CsPbI3 NCs were synthesized by the room-temperature dual-ligand-assisted re-precipitation method under the synergistic effect of n-octanoic acid (OTAC), oleylamine (OLA), and (3-aminopropyl)triethoxysilane (APTES). The anionic OTAC and cationic OLA ligands interacted with the Pb2+ and I–, respectively, on the surface of the α-CsPbI3 NCs to passivate the defects on the surface. By the adjustment to the volume ratio of the OTAC to OLA, the synergistic effects of the dual ligands inhibited the distortion of the octahedral [PbI6]4– and maintained the cubic perovskite structure of the α-CsPbI3 NCs. The hydrolysis of APTES into the silica layer would provide efficient environmental protection and maintain the cubic phase of α-CsPbI3 at room temperature. The α-CsPbI3 NCs not only produce strong red emission upon the UV excitation but also exhibit strong up-conversion luminescent properties upon the near-infrared excitation at a low excitation power laser of 1064 nm, showing dual-mode luminescent characteristics as a promising material for potential applications in optical devices.

CAS / MDL: 14866-33-2
研究领域: 材料科学 · 光电子学 · 纳米技术 · 光子学
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CHEMICAL ENGINEERING JOURNAL · 2020 · IF 10.652

Ni2+-doped CsPbI3 perovskite nanocrystals with near-unity photoluminescence quantum yield and superior structure stability for red light-emitting devices

Menglong Liu,Naizhong Jiang,Hai Huang,Jidong Lin,Feng Huang,Yongping Zheng,Daqin Chen

Room temperature phase instability of cubic CsPbI 3 perovskite nanocrystals is one of the notorious limitations for practical applications in optoelectronic fields. Herein, the incorporation of Ni 2+ ions into CsPbI 3 lattice was successfully achieved by a modified hot-injection method using nickel acetate as doping precursor. The as-prepared Ni 2+ (3.3 mol%): CsPbI 3 nanocrystals exhibited an improved, near-unity (95%~100%) photoluminescence quantum yield owing to the enhanced radiative decay rate and the decreased non-radiative decay rate. Additionally, Ni-doping was demonstrated to stabilize CsPbI 3 lattice and the Ni 2+ : CsPbI 3 film and colloidal solution can retain their red luminescence up to 15 days and 7 months in atmosphere, respectively. First-principle calculations verified that the significantly improved optical performance and stability of Ni 2+ : CsPbI 3 nanocrystals arose primarily from the increased formation energy due to the successful doping of Ni 2+ in CsPbI 3 . Benefiting from such an effective doping strategy, the as-prepared Ni 2+ -doped CsPbI 3 perovskite nanocrystals can function well as efficient red-light emitter toward the fabrication of high-performance perovskite LED with a peak external quantum efficiency of ~7%.

研究领域: 材料科学 · 光电技术 · 纳米技术 · 光子学
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MICRON · 2018 · IF 1.728

Investigating chemical and structural instabilities of lead halide perovskite induced by electron beam irradiation

Xuanyu Chen,Zhiwei Wang

Chemical and structural instabilities of lead halide perovskites remain a major obstacle to their large-scale applications in photovoltaic solar cells and optoelectronic devices. Herein we report on a comparative investigation of electron beam irradiation effects on (all-inorganic) CsPbI 3 and (organic-inorganic hybrid) CH 3 NH 3 PbI 3 halide perovskite thin films by transmission electron microscopy. Upon continuous electron beam irradiation with high dose rates, CsPbI 3 exhibits rather rapid morphological change and compositional degradation within irradiated regions, which are attributed to the radiolysis effect and probably assisted by electron beam heating and Coulomb forces. In contrast, for the freestanding, polycrystalline CH 3 NH 3 PbI 3 thin films, significant structural damage mainly occurs on/outside the periphery of the irradiated regions, while, within the irradiated areas, the structural configurations appear rather intact. The electron beam induced electric field effect is suggested to be the primary reason for the unusual damage phenomenon. The building up of induced electrical fields in CH 3 NH 3 PbI 3 is probably pertinent to its some unusual structural properties (e.g., rotational dynamics of organic cations), but should be also promoted by the unavoidable modifications of physical properties during the film preparation and electron beam focusing. The study provides an insight for exploring the fundamental origin of structural instabilities and property degradation of halide perovskites.

CAS / MDL: 68-12-2 10101-63-0
研究领域: 材料科学 · 化学
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JOURNAL OF ALLOYS AND COMPOUNDS · 2026 · IF 6.7

High-detectivity Ni2+-doped CsPbI3 Nanorod UV Photodetectors

Tianze Wen,Xue Jiang,Jiawei Zheng,Shenao Wang,Jun Luo,Jinju Zheng,Bingsuo Zou,Jialong Zhao,Zhentao Du

Growth of qualified single-crystalline perovskite nanorods. High-purity, high-crystallinity Ni 2+ -doped CsPbI 3 nanorods are successfully prepared by introducing ion doping. • The substantially enhanced stability. The introduction of Ni 2+ doping improved the stability of the nanorods, allowing the Ni 2+ -doped CsPbI 3 nanorods to maintain their structural and optical integrity for more than 5 weeks under ambient conditions. • The overall excellent performance of the as-constructed PDs. The introduction of Ni 2+ doping reduced the defect concentration and carrier recombination rate. The detectivity of the photodetectors is comparable to the best-reported values among both undoped and ion-doped one-dimensional CsPbI 3 nanomaterial-based photodetectors (The Ni 2+ -doped CsPbI 3 nanorod PD has a responsivity of 1.08 × 10 3   A/W, a detectivity of 1.11 × 10 14 Jones, and an external quantum efficiency of 3.58 × 10 5 %, respectively). CsPbI 3 nanomaterials have attracted significant attention in optoelectronic devices due to their high carrier mobility and long diffusion length. Among them, one-dimensional (1D) CsPbI 3 nanomaterials offer more direct charge-carrier transport channels, making them ideal candidates for constructing high-performance micro/nanoscale photodetectors (PDs). However, CsPbI 3 nanomaterials still exhibit a high defect density within the crystal structure, which exacerbates carrier recombination. In this work, we successfully prepared Ni 2+ -doped CsPbI 3 nanorods with high crystallinity via a hot-injection method by partially substituting Ni 2+ for Pb 2+ . The as-prepared nanorods remain stable under ambient conditions for over five weeks. Ni 2+ doping reduces the defect-state density and electron–hole recombination rate of the CsPbI 3 nanorods. Meanwhile, the induced electronically active states facilitate photoexcitation, thereby collectively enhancing the photoelectric performance of the CsPbI 3 nanorods. The ultraviolet (UV) PD assembled based on Ni 2+ -doped CsPbI 3 nanorods exhibits excellent overall performance, featuring a detectivity of up to 1.11 × 10 14 Jones, which is comparable to the reported detectivity values of high-performance 1D CsPbI 3 -based photodetectors measured under different experimental conditions. This work provides some guidance for the development of high-performance UV optoelectric devices. Download: Download high-res image (194KB) Download: Download full-size image High-quality Ni 2+ -doped CsPbI 3 nanorods are successfully synthesized. The UV photodetector exhibits outstanding photoelectric performance, achieving a responsivity of 1.08 × 10 3   A/W, a detectivity of 1.11 × 10 14 Jones, and an external quantum efficiency of 3.58 × 10 5 %.

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ChemNanoMat · 2018 ·Vol. 5 ·期 3 ·313-317 · IF 3.173

Highly Flexible CsPbI3 Perovskite Nanocrystal Light-Emitting Diodes

Min Lu,Hua Wu,Xiaoyu Zhang,Hua Wang,Yue Hu,Vicki L. Colvin,Yu Zhang,William W. Yu

Graphical Highly flexible red light-emitting diodes were fabricated by using smooth Ag film as a cathode, photopolymer (NOA63) as a flexible substrate and CsPbI 3 perovskite nanocrystals as an emission layer, exhibiting a high color purity and EQE of 8.2%. The device has excellent flexibility and high mechanical robustness. The superior optical and electrical properties of perovskite nanocrystals (NCs) make them attractive for light-emitting diodes (LEDs). However, making stable flexible LEDs still remains a big challenge. Here, highly flexible CsPbI 3 perovskite LEDs were fabricated using a photopolymer as the substrate, and an ultra-smooth Ag films instead of ITO as the bottom electrode. Moreover, the device electron injection was also improved with Ag electrode. The flexible LEDs exhibited excellent electroluminescence characteristics with a low turn-on voltage of 2.0 V and an external quantum efficiency of 8.2%. In addition, the flexible LEDs maintained their good performance after 1000 times of repeated 180 degree stretch-release bending.

CAS / MDL: 112-90-3
研究领域: 材料科学 · 光学工程
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Advanced Optical Materials · 2023 ·Vol. 11 ·期 6 ·2202561 · IF 9

Revealing Atomic-Level Surface Passivation of PbI2-Reconditioned Red Perovskite Quantum Dots

Liuli Yang,Jianhua Huang,Zheyuan Xu,Yang Li,Shijin Hou,Yike Tan,Juan Du,Xiao Wang,Ziwei Li,Anlian Pan

CsPbI 3 perovskite quantum dots (QDs) are promising materials for high-efficiency and low-cost red fluorophores in advanced display and light-sensing applications. However, structural and spectral stabilities of CsPbI 3 QDs by traditional preparation are seriously broken in water or light environment. Here, a compositional engineering strategy with an additional PbI 2 -recondition process to synthesize highly-stable CsPbBr 1.2 I 1.8 @ SiO 2 QDs is demonstrated. Time- and temperature-dependent photoluminescence and Raman measurements prove that spectral stability and exciton binding energy of QDs are greatly improved within this strategy. Notably, high-resolution structure characterizations, point-to-point diffraction patterns and line-scanning of element distributions provide strong and direct evidence at atomic-level to reveal that PbI 2 -recondition can repair defects well, which helps to construct perfect lattices and homogeneous SiO 2 passivation layers to prevent the surface bonding of molecules. Moreover, our red perovskite QDs are further designed to prepare various anti-counterfeiting labels as multi-scale complex patterns to store and protect information. The proposed recondition strategy explores a new avenue to prepare stable and high-quality red perovskite QDs for new-generation lighting and light-sensing devices.

研究领域: 材料科学 · 光学工程 · 纳米技术
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OPTICAL MATERIALS · 2021 · IF 3.08

Studying of the pressure-induced photoluminescence characteristics of CsPbI3 nanocrystals

Juanjuan Zhang,Jian Wu,Xiaochun Chi,Lingyun Pan,Yongjun Bao,Ning Sui,Bing Zhao,Hanzhuang Zhang,Yinghui Wang

The carrier dynamics and the radiative channel together govern the performance of optoelectronic devices based on perovskite nanocrystals (NCs). In order to further understand their relationship, the pressure-dependent spectral test is employed, which scans the photo-physical properties of CsPbI 3 NCs. The carrier dynamics involving monomolecular and bimolecular recombination slow down with pressure, which decreases the photoluminescence quantum yield (PLQY). The former is affected by the variance of the shallow defect and both of them are sensitive to the phase transition at 0.39 GPa, which is confirmed by the pressure-dependent PL and absorption spectral data. The radiative lifetime , originated from a part of bimolecular recombination, prolongs with pressure, even though the PLQY decreases simultaneously. The photo-physical characteristics as mentioned is mainly originated from the lattice shrinkage induced by pressure. Our work provides clues for optimizing the performance of lighting and displaying devices based on inorganic perovskites NCs.

研究领域: 光电子学 · 纳米材料 · 钙钛矿纳米晶体 · 高压物理
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Surfaces and Interfaces · 2026 · IF 6

CsPbI3/Pt-g-C3N4 heterostructures toward efficient photocatalytic dichlorophenol removal

Wenbin Shi,Yi Tian,Ping Yang,Xiao Zhang

CsPbI 3 /Pt-g-C 3 N 4 Z-scheme heterojunction was created for efficient charge carrier separation. • 1D/2D heterostructure enhances interfacial contact and charge separation. • Pt nanocrystals act as electron mediators guiding directional charge flow. • Coupling photocatalysis with persulfate activation boosts degradation efficiency. • Singlet oxygen identified as the dominant reactive species in the system. A novel Z-scheme photocatalytic system was constructed by bridging graphitic carbon nitride (g-C 3 N 4 ) nanosheets with CsPbI 3 nanowires (NWs) via Pt nanocrystals (NCs) mediators. Comprehensive material characterization verifies that the rational combination of CsPbI 3 NWs and g-C 3 N 4 nanosheets leads to a well-defined 1D/2D heterostructure with intimate interfacial contact. Notably, Pt NCs as highly efficient electron mediators successfully establish a Z-scheme charge transfer pathway and thereby remarkably enhance the separation and migration efficiency of photogenerated carriers. Photoelectrochemical measurement confirms that g-C 3 N 4 /Pt/CsPbI 3 NW composites exhibit substantially elevated photocurrent density and remarkably reduced charge transfer resistance compared with the composites created using CsPbI 3 NCs, indicating the important role of 1D NW structure. Because of well-developed heterostructure and expanding visible light absorption, g-C 3 N 4 /Pt/CsPbI 3 NW composites revealed a degradation efficiency of 71.3% for 2,4-dichlorophenol while that of g-C 3 N 4 /Pt/CsPbI 3 NC composites is 62.9%. The degradation efficiency was further elevated to 82.8% with the introduction of persulfate, forming a coupled photocatalysis advanced oxidation process. Mechanistic studies demonstrate that the construction of Z-scheme heterojunction remarkably enhances the generation of superoxide radicals (·O 2 - ), with a resulting concentration of 12.23 × 10 –7 mol/L. These ·O 2 - species are subsequently converted into singlet oxygen, the primary active agent that works together with ·O 2 - and other radicals to synergistically degrade organic pollutants. These resultssuggest that a highly efficient and stable Z-scheme photocatalyst was created and offer important theoretical and practical guidance for advanced photocatalyst design. Download: Download high-res image (237KB) Download: Download full-size image

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LANGMUIR · 2020 · IF 3.557

Stable Luminescent CsPbI3 Quantum Dots Passivated by (3-Aminopropyl)triethoxysilane

Kun He,Cong Shen,Yanqing Zhu,Xiaoli Chen,Zhuoneng Bi,Thandapani Marimuthu,Gang Xu,Xueqing Xu

Perovskite nanomaterials have been fascinating for commercial applications and fundamental research owing to their excellent optical properties and satisfactory processability. They are expected to be alternative downconversion materials in phosphor-converted LEDs for lighting or display technology. However, owing to their low formation energy and large specific surface area, perovskite nanomaterials are sensitive to environmental stress like humidity, heat, etc. In this paper, cubic CsPbI3 quantum dots (QDs) with improved stability are synthesized using (3-aminopropyl)triethoxysilane (APTES). These luminescent CsPbI3 QDs passivated by APTES not only show excellent stability when stored in hexane but also possess outstanding steadiness for lattice structure when prepared as a thin film in open air. They do not decompose immediately in the water. Such excellent stability is attributed to the hindrance from hydrolysis of APTES, which forms an analogous core–shell structure to protect the “core” CsPbI3 QDs. Furthermore, an additional iodine source is added to enhance their emissionm and CsPbI3QDs with a PLQY of 84% are synthesized.

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Journal of Energy Chemistry · 2025 · IF 14.9

Self-crosslinking strategy enabling high-performance inverted inorganic perovskite solar cells with fill factor exceeding 85%

Zhongyu Liu,Xiu Huang,Yuchen Zhao,Jianwei Wang,Jiaying Liu,Chenyu Zhou,Hongwei Wang,Tian Cui,Xiaohui Liu

Inorganic CsPbI 3 perovskite with superior thermal stability and photoelectric properties has developed into a promising candidate for photovoltaic applications. Nevertheless, the power conversion efficiency (PCE) of CsPbI 3 perovskite solar cells (PSCs) still lags far behind that of both organic-inorganic hybrid counterparts and the theoretical PCE limit, primarily restricted by severe fill factor (FF) and open-circuit voltage ( V OC ) deficits. Herein, an in-situ self-crosslinking strategy is proposed to construct high-performance inverted inorganic PSCs by incorporating acrylate monomers as additives into CsPbI 3 perovskite precursors. During the thermal annealing process of perovskite films, acrylate monomers can form network structures by breaking the C=C groups through an in-situ polymerization reaction, mainly anchored at the grain boundaries (GBs) and on the surfaces of perovskite. Meanwhile, the C=O groups of acrylate polymers can favorably coordinate with uncoordinated Pb 2+ , thereby decreasing defect density and stabilizing the perovskite phase. Particularly, with multiple crosslinking and passivation sites, the incorporation of dipentaerythritol pentaacrylate (DPHA) can effectively improve the perovskite film quality, suppress nonradiative recombination, and block moisture erosion. Consequently, the DPHA-based PSC achieves a champion PCE of 20.05% with a record-high FF of 85.05%, both of which rank among the top in the performance of inverted CsPbI 3 PSCs. Moreover, the unencapsulated DPHA-based device exhibits negligible hysteresis, remarkably improved long-term storage, and operational stability. This work offers a facile and useful strategy to simultaneously promote the efficiency and device stability of inverted inorganic PSCs.

研究领域: 材料科学 · 光伏技术
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Small · 2025 · IF 12.1

Room-Temperature CsPbI3-Quantum-Dot Reinforced Solid-State Li-Polymer Battery

Wentao Wang,Aili Jia,Yiping Wang,Yuanxiao Qu,Junfeng Huang,Wen Zhang,Haitao Zhang

A novel polymer electrolyte based on CsPbI 3 quantum dots (QDs) reinforced polyacrylonitrile (PAN), named as PIL, is exploited to address the low room-temperature (RT) ion conductivity and poor interfacial compatibility of polymer solid-state electrolytes. After optimizing the content of CsPbI 3 QDs, RT ion conductivity of PIL largely increased from 0.077 to 0.56 mS cm −1 , and its Li-ion transference number ( τ L i + ${{\tau }_{{\mathrm{L}}{{{\mathrm{i}}}^ + }}}$ ) from 0.20 to 0.63. It is revealed that the synergistic enhancement of Li-ion transport and interface stability is realized by CsPbI 3 QDs through Lewis acid–base interaction, ordered polarization of PAN, and interface chemical regulation. These two effects guarantee the robust solid-electrolyte interface (SEI) in PIL-based solid-state batteries. Consequently, PIL electrolyte enables solid-state Li-metal batteries to deliver extraordinary RT cycling performance as verified by excellent cycling stability (>2000 h at 0.1 mA cm −2 ) of Li|PIL|Li symmetric batteries. Moreover, Li|PIL|LFP (LFP is LiFePO 4 ) and Li|PIL|NCM811 (NCM811 is Li(Ni 0.8 Co 0.1 Mn 0.1 )O 2 ) batteries maintain capacity retention of 81.2% and 77.9%, respectively, after 600 cycles at 0.5 C, as well as good rate-capability and very high Coulombic efficiency at RT.

研究领域: 材料科学 · 能源存储与转换
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ACS Applied Nano Materials · 2024 · IF 5.3

Sulfate-Passivated CsPbI3 Perovskite Nanocrystals for Efficient Red Light-Emitting Diodes

Hongrui Cheng,Wensong Wang,Haijiang Qiu,Fushan Li,Yuanhui Zheng

Due to their excellent optical performance, lead halide perovskite nanocrystals (PeNCs) have been widely used in optoelectronic devices. However, the presence of surface defects such as localized trap states severely hampers their practical application in optoelectronic fields. In this work, we have developed a simple method to reduce surface defects by introducing sulfuric acid after the nucleation of CsPbI3 PeNCs is complete. Sulfate ions effectively interact with the exposed metal lead ions on the surface of perovskite NCs, leading to surface passivation. This process represses nonradiative recombination and significantly enhances the luminescence efficiency of PeNCs. Moreover, the passivated CsPbI3 PeNCs with SO42– exhibit a lower overall energy-level structure compared to that of pristine CsPbI3 PeNCs, promoting improved electron injection. Benefiting from this highly effective passivation strategy, light-emitting diodes (LEDs) based on SO42–-passivated PeNCs exhibit an optimal external quantum yield of 9.94% and luminance of 2182 cd m–2, surpassing the performance of LEDs made from pristine PeNCs.

研究领域: 材料科学 · 光电领域
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