Nano Research
·
2021
·Vol. 14
·期 11
·3864-3872
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IF 8.897
Hu Taotao,Zhang Fu,Yu Hua,Zhang Meng,Yu Yue,Zhang Wenfeng,Liu Rui,Tian Liuwen,Ma Zhu
As a famous hole transporting material, nickle oxide (NiO x ) has drawn enormous attention due to its low cost and superior stability. However, the relatively low conductivity and high-density surface trap states of NiO x severely limit device performance in solar cell applications. Interfacial engineering is an efficient approach to achieve remarkable hole-transporting performance by surface passivation. Herein, the efficient NiO x hole transport layer was prepared by surface passivation engineering strategy via facile solution processes with cesium iodide (CsI). It is demonstrated that CsI plays a super-effective dual-function role in inverted solar cell device: On one hand, the presence of CsI hugely passivates the surface trap states at the NiO x /perovskite interface along with obviously improved conductivity by the incorporated Cs + ; on the other hand, the ions immigration is significantly suppressed by the presence of I ion for high-quality perovskite films, resulting in a stable contact interface. The ameliorative interface leads to largely reduced carrier non-radiative recombination, attributing to boosted carrier extraction efficiency. As a result, decent power conversion efficiency (PCE) of 18.48% with a noticeable fill factor (FF) beyond 80% was achieved. This facile and efficient surface engineering approach with dual-function shows excellent potential for the design of high-performance functional interfacial modification layer to achieve high-performance solar cells.
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DOI
高影响因子
Solar RRL
·
2023
·Vol. 7
·期 24
·2300701
·
IF 7.9
Yingying Deng,Chen Dong,Yuhao Song,Miaosen Yao,Wanlong Wang,Junjie Tong,Gentian Yue,Weifeng Zhang,Furui Tan
Hole-transporting layer (HTL) plays a critical role in determining the device performance of carbon-electrode-based perovskite solar cells (C-PSCs). However, the use of best-performing organic HTL (such as 2,2′,7,7′-tetrakis (N, N-di-p-methoxyphenyl-amine)-9,9′-spirobifluorene [Spiro-OMeTAD] or poly(3-hexylthiophene) [P3HT]) for efficient and stable C-PSCs remains challenging due to the hygroscopic additives, unfavorable band alignments, and corrosive carbon pastes. Herein, the additive-free Spiro-OMeTAD/P3HT composite (denoted as Spiro@P3HT) is employed as HTL to construct the fully ambient solution-processed C-PSCs, and NiO x is used as top HTL/buffer layer that protects P3HT from being corroded by carbon pastes. As compared to pristine P3HT, the incorporation of Spiro-OMeTAD not only smooths the HTL morphology, but also shifts down the highest occupied molecular orbital level, thus forming a more energy-favorable cascade that maximizes hole extraction at the perovskite/HTL interface and minimizes recombination loss. Consequently, the target C-PSCs with optimal Spiro@P3HT composite HTL achieve a champion efficiency of 19%. More importantly, benefiting from the self-sealing protection of hydrophobic Spiro@P3HT HTL and carbon electrode, the target C-PSCs exhibit no noticeable performance degradation after storage in ambient air for 1440 h and continuous operation under illumination for 350 h. In this work, a facile way is provided to develop robust and efficient additive-free HTL toward fully solution-processing high-performance C-PSCs.
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DOI
高影响因子
Journal of Materials Chemistry C
·
2024
·Vol. 12
·期 18
·6628-6636
·
IF 5.7
Yuhao Song,Bingjie Xu,Yingying Deng,Miaosen Yao,Junjie Tong,Qichao Wang,Wanlong Wang,Gentian Yue,Weifeng Zhang,Chen Dong,Furui Tan
Low-cost and stable carbon-based perovskite solar cells (C-PSCs) have been regarded as the most promising device architecture for PSC commercialization. However, due to the large interfacial resistance and energy-level mismatch between the carbon-electrode and perovskite, C-PSCs have suffered from a low fill factor (FF) and an open-circuit voltage (Voc) deficit, limiting their efficiency. Here, a low-temperature, solution-processed P3HT/NiOx organic/inorganic hybrid bilayer, where both elements are doped with graphene (G), is developed as hole-transporting layers (HTLs) for C-PSCs. The optimal G-P3HT/G-NiOx bilayer HTLs not only provide well-matched cascade band alignments that facilitate the charge separation and extraction, and reduce the recombination loss at the perovskite/carbon-electrode interface, but their G co-dopants also build carrier highways within the NiOx and P3HT matrix, accelerating the charge transport and thus reducing FF loss. As a result, a Voc improvement of 100 mV, an FF of up to 79.2%, and a best power conversion efficiency (PCE) of 19.1% for the C-PSCs are achieved. More importantly, the unencapsulated devices with G-P3HT/G-NiOx bilayer HTLs retain 88% of their initial PCE in ambient air for 2500 h; and 91% upon continuous heating at 85 °C for 637 h; and 77% after operation at the maximum power point for over 12000 min. This work provides valuable knowledge for designing bilayer HTLs for highly efficient and stable C-PSCs.
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高影响因子
Small
·
2024
·
IF 13
Jiajia Zhang,Fang Cui,Qinghai Ma,Tieyu Cui
Low-cost and eco-friendly Ni/NiO heterojunctions have been theoretically proven to be the ideal candidate for stepwise electrocatalysis of alkaline hydrogen evolution reaction, attributed to the preferred OH ad adsorption by incompletely filled d orbitals of NiO phase and favorable H ad adsorption energy of Ni phase. Nevertheless, most Ni/NiO compounds reported so far fail to exhibit excellent catalytic activity, possibly due to the lack of efficient electron transport, limited interfacial active sites, and unregulated Ni n+ ratios. To address the above bottlenecks, herein, the ultrasmall Ni/NiO x @C nanocapsules (<5 nm) are directly constructed by graphitization of four-layer Ni-based coordination polymers at record low temperatures of 400 °C. Ascribed to the accelerated electron and mass transfer by the carbon nano-onions coated around Ni/NiO x heterojunctions, the extreme rise in interfaces and Ni 3+ defects with t6 2ge1 g electronic configuration owed to the ultrasmall size, the Ni/NiO x @C nanocapsules exhibit the highest catalytic activity and the lowest overpotential of η 10 = 80 mV among various Ni/NiO materials (measured on the glassy carbon electrode). This work not only constructs an industrialized high-efficiency electrocatalyst toward alkaline HER, but also provides a novel strategy for the constant-scale preparation of multicomponent transition metals-based nanocrystals below 4 nm.
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DOI
PubMed
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2023
·
IF 15.1
Dan Zhang,Xiaofeng Wang,Tingfang Tian,Xuefeng Xia,Jiayu Duan,Zhiping Fan,Fan Li
The poor and limited-functional NiO x /perovskite buried interface has hindered the development of NiO x -based perovskite solar cells (PSCs). Herein, a π-conjugated liquid-crystalline organic spacer with aggregation-induced emission (AIE), ( Z )-2-([1,1′-biphenyl]-4-yl)-3-(4-(3-aminopropoxy)phenyl)acrylonitrile (BPCSA), is employed for the multi-functional NiO x /perovskite buried interface engineering. The functional groups of BPCSA spacer can coordinate with NiO x and induce the in-situ formation of 2D perovskite at the NiO x /perovskite interface. The in-situ -formed 2D perovskite interlayer can passivate interface defects, strengthen interface interconnection and optimize energy level alignment between NiO x and 3D perovskites. More markedly, the π-conjugated liquid-crystalline molecular structure and AIE property of BPCSA spacer can guide the high-quality crystal growth of upper 3D perovskite films, release interfacial strain, facilitate interfacial carrier transport and realize efficient photosensitization process concurrently. Consequently, such 3D/2D PSCs can acquire a champion power conversion efficiency (PCE) of 23.45% with improved stability. Besides, high-performance flexible 3D/2D PSCs are also successfully demonstrated.
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高影响因子
Applied Materials Today
·
2022
·
IF 8.663
Xikang Yang,Anlang Wu,Zhiqiang Deng,Zhihai Wu,Zhenfu Zhao,Ziyang Hu
Perovskite quantum dots (PeQDs) are emerging as one of the most promising candidates for next-generation display technology due to their outstanding optical and electrical properties. However, the inherent instability, lead-toxicity and poor electrical conductivity of PeQDs films have seriously hindered their commercial applications. To solve these problems, we adopted the strategy of Zr ions doping and in-situ passivation of CsPbBr 3 PeQDs with the short-chain inorganic ligand potassium thiocyanate (KSCN), which not only enhanced the stability and boosted the photoluminescence quantum yield (PLQY) of PeQDs films, but also improved their electrical conductivity. To further solve the problem of charge injection balance and improve the operating lifetime of the devices, we simultaneously used all-inorganic metal oxide semiconductor materials Mg-doped ZnO (Mg-ZnO) and Mg-doped NiO x (Mg-NiO x ) as the electron and hole transport layers of QLEDs (ETL and HTL), respectively. The operating stability of the devices was greatly improved while being able to withstand higher current densities. Therefore, using Zr-doped and KSCN passivated CsPbBr 3 (Zr doped CsPbBr 3 -KSCN) PeQDs as the light-emitting layer, we fabricated highly efficient and stable green-light all-inorganic quantum dots light-emitting diodes (QLEDs) with the maximum external quantum efficiency (EQE) of 13.8% and the maximum brightness of 24800 cd/m 2 . These green perovskite QLEDs provide a working half-life of 360 min (initial brightness is 1000 cd/m 2 ) and the operating half-life of the devices is more than two times higher than that of the reference devices. Our proposed strategy based on doping and in-situ inorganic ligand passivation will open a new avenue for fabricating efficient, stable and other colored perovskite QLEDs.
研究领域:
材料科学
·
电气工程
·
光电技术
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DOI
高影响因子
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