SOLAR ENERGY
·
2021
·
IF 5.742
Junye Tong,Shaotong Wang,Gang Wang,Yue Liu,Yuxiang Wang,Liping Chen,Lingling Wang,Daocheng Pan,Xintong Zhang,Yichun Liu
Ion doping strategy is a promising method to enhance the efficiency of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells, however, most of the reported works focus on studying the single ion doping in CZTSSe absorber layers . Here, Li + &Ag + and Li + &Cd 2+ double-ion-doping strategy are applied to improve the microstructure and device performances. We found that the double-ion-doping strategy can obviously increase the grain size, reduce the thickness of fine-grain layers and enhance the device performances. Furthermore, the PCEs of Li + &Ag + and Li + &Cd 2+ doped CZTSSe solar cells are up to 8.87% and 8.39%, respectively. It shows an encouraging improvement of over 43.5% and 35.8% enhancement compared with the traditional method (6.18%), and significantly higher than single ion doping strategy (7.60%, 7.99% and 7.11% for Li + , Ag + , and Cd 2+ doped CZTSSe solar cells). This work provides a new solution to improve the microstructure and device performances of CZTSSe solar cells.
研究领域:
材料科学
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能源技术
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产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2020
·Vol. 9
·期 4
·2292-2300
·
IF 11.301
Yafang Qi,Xiaoyue Zhao,Yao Liu,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yuena Meng,Sixin Wu
In Cu2ZnSn(S,Se)4 photovoltaic devices, the exceptionally high density of 2CuZn + SnZn donor defects may induce bandgap fluctuations and thus limit Voc and PCE enhancement. We have previously reported that the partial substitution of Ag for Cu in Cu2ZnSn(S,Se)4 provides a promising way to effectively suppress CuZn defects and considerably enhance the cell performance for Cu2ZnSn(S,Se)4 photovoltaic devices. However, the bandgap fluctuations and detrimental band tailing fundamentally still limit cell performance. On the basis of a Ag-substituted CZTSSe system, in this paper, we demonstrate that partially substituting Zn with Mn could be a feasible tactic to pronouncedly decrease the bandgap fluctuations and prevent detrimental band tailing. Our in-depth investigation reveals that Mn substitution could increase depletion width, decrease the defect densities of the CuZn acceptor and 2CuZn + SnZn donor, and enable grain boundary (GB) inversion in a (Cu,Ag)2ZnSn(S,Se)4-based cell. As a result, an impressive PCE of 11.81% was achieved when the Mn substitution level was 10%, with a Voc of 478 mV, a Jsc of 37.89 mA cm−2, and an FF of 65.23%. This is so far the highest efficiency among Mn-substituted CZTSSe-based photovoltaic devices. By thoroughly understanding these photoelectric properties of the CZTSSe-based photovoltaic devices, we believe that the breakthrough in device efficiency will come soon through our continuous efforts.
研究领域:
材料科学
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光伏技术
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产品关联
DOI
高影响因子
INORGANIC CHEMISTRY
·
2019
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IF 4.85
Mengping He,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Yuena Meng,Sixin Wu
The earth-abundant Cu2ZnSnS4 (CZTS) quantum dots (QDs) have emerged as one potential substitute to toxic cadmium or rare indium QDs, but their application in quantum dot-sensitized solar cells (QDSSCs) is still limited by the improper particle size and the rigorous synthesis and ligand exchange conditions. Herein, we developed a one-pot hot injection method by using Tri-n-octylphosphine oxide (TOPO) as the solvent and oleylamine as the capping agent to synthesize Cu2ZnSn(S,Se)4 (CZTSSe) QDs with adjustable size and narrow size distribution. The key feature of this approach is that we can take advantage of the high-temperature nucleation, low-temperature growth, and strong reducibility of NaHB4 to prepare small-sized CZTSSe QDs without using 1-dodecanethiol (DDT) and to extend the light harvesting range through Se incorporation. After Se incorporation, it turns out that the conduction band (CB) level of CZTSSe QDs decreases, implying that the injection driving force of the electron to the CB of TiO2 films becomes weaker and a larger recombination would be induced at the TiO2/QDs/electrolyte interface. Benefiting from the broadened optoelectronic response range, the induced higher Jsc (16.80 vs 14.13 mA/cm2) finally leads to the increase of the conversion efficiency of CZTSSe QDSSC from 3.17% to 3.54% without further modification. Despite the fact that the efficiency is still far behind those of literature reported values through use of other chalcogenide sensitizers, this DDT-free approach solves the main hindrance for the application of CZTSSe QDs in QDSSCs and holds a more convenient way for ligand exchange, light absorption improvement, and particle size control.
研究领域:
材料科学
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能源技术
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产品关联
DOI
PubMed
高影响因子
SOLAR ENERGY
·
2017
·
IF 4.018
Yingli Pei,Jing Guo,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Qingwen Tian,Yuena Meng,Sixin Wu
The doping of indium into absorber layer has been proven to be beneficial for hybrid buffer structured Cu 2 ZnSn(S, Se) 4 (CZTSSe) solar cells, but it is difficult to precisely control the doping content only relying on In diffusion from In 2 S 3 emitter. Herein, we use the solution method to prepare In-substituted CZTSSe layer by directly doping In 2 Se 3 into metal chalcogenides precursor solution. The doping content can be precisely controlled and the influences of indium doping on cell performance are systematically discussed. Mott-Schottky and resistivity measurements indicate that the carrier concentration and charge transport process are monotonically enhanced with increasing In/(In + Sn) content (0 at.%, 3 at.%, 6 at.% and 12 at.%). The improvements of series resistance also lead to a monotonic increase of fill factor ( FF ) from 52.1% to 64.8%. Due to the larger recombination at high doping content, the 6 at.% In content device finally contributes the highest power conversion efficiency of 8.47%. It is expected that a precisely controlled indium doping could further improve cell performance for efficient hybrid buffer structured devices.
研究领域:
材料科学
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光伏技术
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产品关联
DOI
高影响因子
Solar RRL
·
2021
·Vol. 5
·期 8
·2100216
·
IF 8.582
Bin Xu,Xiatong Qin,Xiaoshuang Lu,Yulin Liu,Ye Chen,Hui Peng,Pingxiong Yang,Junhao Chu,Lin Sun
Cu 2 ZnSn(S,Se) 4 has been widely regarded as a promising thin-film solar cell material. In recent years, the development of Cu 2 ZnSn(S,Se) 4 solar cells has encountered a bottleneck, and the higher open-circuit voltage deficit mainly caused by the secondary phase, CZTSSe/CdS interface recombination, deep-level defects, and band-tailing effects has been an outstanding issue. Herein, the influence of the composition and phase distribution of the precursor thin film on the defect and performance of Cu 2 ZnSn(S,Se) 4 solar cells is studied. By modifying the distribution of composition and phase for precursor films, a Cu 2 ZnSn(S,Se) 4 absorber layer without secondary phase and with fewer detrimental defects can be obtained from the pure-phase precursor film. Thanks to the reduction of the band-tailing effects, the increase in the depletion width for heterojunction, and the decrease in CZTSSe/CdS interface recombination, the photovoltaic performance of CZTSSe thin-film solar cells is significantly improved. Finally, based on the excellent kesterite absorber layer, a Cu 2 ZnSn(S,Se) 4 solar cell with 11.51% power conversion efficiency (the active area efficiency is 12.4%) is prepared.
研究领域:
材料科学
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光伏技术
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产品关联
DOI
高影响因子
Journal of Materials Chemistry A
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2021
·Vol. 10
·期 2
·779-788
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IF 12.732
Kang Yin,Xiao Xu,Muyu Wang,Jiazheng Zhou,Biwen Duan,Jiangjian Shi,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng
Crystallization growth plays a crucial role in influencing the film quality and final photoelectric conversion performance of a kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cell. Herein, an exploration of a two-step selenization strategy to control the growth kinetics of an aqueous solution derived CZTSSe film for high solar cell efficiency is reported. By synergistically exploiting the benefits of high and low temperature selenization in facilitating the CZTSSe phase formation, introducing beneficial point defect states, configuring the interfacial energy band structure, and sustaining excellent surface microstructure, a total-area cell efficiency of 12.5% has been achieved. These results demonstrate the significance of controlling the crystallization growth of CZTSSe to improve the device performance. The high cell performance achieved here is comparable to that of hydrazine or dimethyl sulfoxide solution-based cells and thus would help facilitate the development of CZTSSe solar cells toward more diversified film fabrication technologies.
研究领域:
材料科学
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可再生能源
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DOI
高影响因子
SOLAR ENERGY
·
2025
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IF 6.6
Yan Zhu,Bin Yao,Zhanhui Ding,Yongfeng Li,Liyuan Shi,Chunkai Wang,Ding Ma,Mengge Li,Yue Liu,Ning Ding,Yuting Sun,Xiaofei Sun,Shaung Li
In this work, non-uniform Ag and In co-doped CZTSSe (NoU-Ag x In y , x = Ag/(Ag + Cu) = 0–15 %, y = In/(In + Zn + Sn) = 0–12 %) was prepared by doping Ag at the front surface of CZTSSe and doping In at the back surface of CZTSSe. CZTSSe solar cell with conventional structure but without anti-reflection layer was fabricated by using the NoU-Ag x In y as absorber (Cell-NoU-Ag x In y ). Through optimizing the Ag and In doping concentration, the highest PCE of 11.82 % was achieved in the cell-NoU-Ag x In y with x = 10 % and y = 8 %. It is higher than the highest PCE (9.05 %) of CZTSSe solar cells obtained in this work and the highest PCE (9.45 %) of uniform Ag and In co doped CZTSSe solar cells with similar doping concentrations of Ag and In. Compared to CZTSSe solar cell, the increased PCE of cell-NoU-AgIn is dominantly due to decreased J 0 , followed by increase in J L . The decrease in J 0 is mainly attributed to reduce in number of [2Cu Zn + Sn Zn ] defect clusters and of ZnSe at front interface induced by Ag doping, as well as formation of passivation field at back interface induced by In doping. The increase in J L is mainly due to increase in depletion region width induced by the Ag doping and formation of the passivation field. This study demonstrates that non-uniform Ag and In doped CZTSSe is favorable to increasing PCE of CZTSSe solar cells.
研究领域:
材料科学
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能源科学
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光伏技术
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产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2025
·
IF 6.3
Jingyuan Guo,Letu Siqin,Yufei Li,Wenbo Li,Ruijian Liu,Hongmei Luan,Chengjun Zhu
The band alignment of Cu 2 ZnSn(S,Se) 4 (CZTSSe)/CdS(In) in novel CZTSSe solar cells without a ZnO window layer has been initially investigated in our previous studies. However, the In content of CdS(In) diffused into the absorber is low, and the ability to regulate the band arrangement is limited. In this work, we employ In-ion-doped absorbers to adjust defects. However, this approach leads to a significant loss in short-circuit current density (Jsc). To address this, Cd is introduced to enhance Jsc through grain growth promotion and morphological improvement, thereby offsetting the Jsc loss induced by In doping. The co-doping of In and Cd reduces the conduction band offset (CBO) from 0.28 eV to 0.21 eV, thereby inhibiting carrier recombination and enhancing transport efficiency. Additionally, the concentration of bulk defects is reduced by an order of magnitude. As a result, the fill factor (FF) increased from 56.97 % to 60.08 %, Jsc increased from 37.10 mA/cm 2 to 38.66 mA/cm 2 , and open-circuit voltage (Voc) increased from 431.64 mV to 440.48 mV. Finally, the power conversion efficiency (PCE) of CZTSSe solar cell is enhanced to 10.23 %.
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产品关联
DOI
高影响因子
Advanced Materials Interfaces
·
2022
·Vol. 9
·期 21
·2200393
·
IF 6.389
Ting Wang,Bin Yao,Yongfeng Li,Zhanhui Ding,Jiayong Zhang,Chunkai Wang,Jia Liu
An amorphous boron nitride (aBN) layer is inserted between Cu 2 ZnSn(S,Se) 4 (CZTSSe) films and Mo back electrode of CZTSSe solar cell by magnetron sputtering to mitigate the carrier recombination at back interface by tuning energy band alignment and suppressing formation of secondary phases and Mo(S,Se) 2 . The effect of the aBN layer on power conversion efficiency (PCE) of CZTSSe solar cell is investigated by numerical simulation and experiment. It is found that PCE is greatly improved via the insertion of suitable thick aBN layer, which is attributed to increased open-circuit voltage ( V OC ) and fill factor (FF). By quantitative analysis, it is deduced that the increased V OC originates mainly from decrease in reverse saturation current density ( J 0 ), followed by increase in shunt resistance ( R Sh ), and the increased FF is mainly due to the decreased J 0 , followed by increased R Sh and decreased photogenerated current density ( J L ). By optimizing aBN thickness through tuning sputtering time, the PCE increases from 8.68% of CZTSSe solar cell without the aBN layer to 9.51% of the CZTSSe solar cell with aBN layer. The influence mechanism of the aBN layer on the PCE is suggested by analyzing quantitatively the effect of the aBN layer on J L and electrical parameters.
研究领域:
光伏技术
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材料科学
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半导体器件
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薄膜太阳能电池
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DOI
高影响因子
CERAMICS INTERNATIONAL
·
2020
·
IF 3.83
Xiaogong Lv,Chengjun Zhu,Huimin Hao,Ruijian Liu,Yiming Wang,Junzhen Wang
In this work, Cu 2 ZnSn 1- x Ge x S 4 (CZTGS) precursor thin films with varied Ge composition ( x = 0, 0.2, 0.4, 0.6, 0.8, and 1) were prepared by using a water-based solution approach. After selenizing at 550 °C for 10 min in a graphite box containing selenium powder, the as-fabricated kesterite Cu 2 ZnSn 1- x Ge x (S,Se) 4 (CZTGSSe) thin films were systematically investigated for phase structure, morphology, valence states of elements, optical properties , and electrical properties. The results showed that the Ge element was successfully incorporated into the host lattice of Cu 2 ZnSn(S,Se) 4 (CZTSSe), and kesterite CZTGSSe films were formed. As the Ge content increased, the crystal grains in the films grew larger and showed uniform morphology on the sample surfaces. The band gap in the CZTGS(Se) thin films could be engineered in the range of 1.21 eV–2.00 eV by tuning the relative compositions of the Ge elements. Furthermore, it was confirmed that the doping of Ge improved the mobility, resistivity, and photoelectric performance of the films. Finally, the Cu 2 ZnSn 0.8 Ge 0.2 (S,Se) 4 solar cell device with an efficiency of 5.39% was prepared. The results indicate that non-toxic water solution-based CZTGSSe films showed potential for application in solar cells.
研究领域:
材料科学
·
太阳能电池技术
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产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2020
·
IF 8.758
Xinan Shi,Yuxiang Wang,Hui Yu,Gang Wang,Lijian Huang,Daocheng Pan
The crystal quality of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film is crucially important to a high-performance CZTSSe solar cell. After selenization, a bilayer CZTSSe thin film consisting of a large-grain top layer and a small-particle bottom layer is usually observed according to the literature. In this work, a facile air-annealing pretreatment is conducted for a Cu2ZnSnS4 precursor thin film prior to selenization, which can lead to sodium diffusion into the CZTS precursor thin film and surface oxidization of the CZTS thin film. Our experimental results revealed that the Na prediffusion and the surface oxidation of the CZTS precursor thin film can significantly promote the crystal growth of the CZTSSe thin film, which can completely remove the small-particle bottom layer and form a large-grain-spanned CZTSSe thin film. As a result, a photoelectric conversion efficiency of 9.80% was achieved by this method.
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2018
·
IF 8.097
Wangen Zhao,Fengyang Yu,Shengzhong Frank Liu
The development of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells determines the prospect of thin-film photovoltaic devices because of some of their strengths. However, the usual solution fabrication processes of CZTSSe absorbing layers are either too tedious or highly toxic. Here, we have developed an alternative strategy to prepare kesterite CZTSSe absorber films with a simple and low-toxicity solution process by replacing the commonly employed thiol-based compounds using the glycolic acid aqueous solution, which significantly reduces the environment pollution and toxicity, providing a possibility toward the green solvent process. The power conversion efficiency of 6.81% has been acquired based the aqueous solution-processed CZTSSe thin film via optimizing the fabrication technology.
研究领域:
材料科学
·
能源技术
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产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）