Materials
·
2025
·Vol. 18
·期 23
·5360
·
IF 3.2
Yanhui Jiao,Xiaoqian Wang,Zisheng Tang,Manrui Liu,Chengqi Liu,Qi Zhang,Yong Liu
Over the past few years, two-dimensional transition metal dichalcogenides (TMDCs) have garnered substantial attention in the field of two-dimensional materials research, owing to their exceptional physicochemical properties. Notably, V-WSe2distinguishes itself by reducing the Schottky barrier at the interface between the material and metal electrodes, thus exhibiting remarkable potential for applications in optoelectronic devices. Our work explores the synthesis of monolayer V-WSe2through halide-assisted atmospheric-pressure chemical vapor deposition (APCVD), with an emphasis on the effects of various halide types on the growth mechanism. In addition, we investigate the impact of vanadium (V) content on the performance of WSe2. Comprehensive optical and structural characterizations of the synthesized material were systematically performed. The findings indicate that incorporating halide salts effectively reduces the volatilization temperature of tungsten trioxide (WO3), thereby markedly enhancing reaction controllability and material crystallinity. Among the tested halide salts, KCl, NaCl, and KI, KI demonstrated the capability to achieve the lowest growth temperature. Varying the V content in the V-WSe2structure significantly influences the optical properties, with higher vanadium concentrations reducing the material’s optical bandgap and Raman frequency. This study highlights the critical role of halides and vanadium content in the material growth process, providing valuable insights for the controlled synthesis of two-dimensional TMDC materials and how varying vanadium concentrations also affect the material’s performance.
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Science Advances
·
2025
·Vol. 11
·期 50
·
IF 12.5
Yuting Wu,Hancheng Zhu,Zhigao Huang,Hao Zhang,Yinjuan Ren,Hua Shen,Yiming Wu,Yue Wang
Output power of a laser device critically defines the application prospects. Colloidal quantum dots (QDs) have emerged as auspicious laser media; however, the exclusively low-power emission obscures the practical deployment. Here, we resolve this challenge by designing an architecture of QD laser with unprecedented peak powers in megawatt regime. The achievement is enabled by integrating the QDs with exceptional gain metrics with a seed-amplifier laser structure. Transient spectroscopy and theoretical simulation reveal that the narrow emission linewidth and large biexciton binding energy of the QDs act synergistically to enable an enhanced gain performance with submonoexcitonic threshold and record high–saturated gain cross section. A Littman-Metcalf cavity is designed to deliver the continuously tunable laser emission, and the synchronous amplification reaches the megawatt output. The high-power QD laser exhibits high spatial coherence, linear polarization, and operational endurance, which has proved effective as the pump source for spectroscopic research.
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ACS Applied Nano Materials
·
2025
·
IF 5.5
Yingchun Dong,Jiongyue Hao,Yijie Shi,Yanqiao Ding,Wen Niu,Yuanting Yu,Hangyu Liu,Chun Huang,Yuhui He,Xiangshui Miao,Wei Hu,Yong He
Monitoring of reactive nitrogen by the Internet of Things (IoT) is urgently needed for sustainable nitrogen management to debilitate ill-health and achieve climate-stable. However, the real-time detection of nitrogen dioxide (NO2) at parts per billion (ppb) levels using a low-temperature chemiresistive gas sensor with high sensitivity and fast response and recovery remains a formidable challenge. In this study, we propose a facile one-step hydrothermal method for substituting nickel into tin selenide (SnSe) nanosheets, which effectively enhances the room temperature (RT) response/recovery speed and sensitivity of SnSe-based sensor toward NO2. The Ni-doped SnSe sensor with a vintage doping ratio exhibits an enhanced absolute response value of 20.06 times (58.99% vs 2.94%) toward 100 ppb NO2, compared to the pristine SnSe sensor, while also demonstrating a remarkable reduction in response/recovery time (10.32 s and 11.88 s vs 112.43 and 111.14 s). Moreover, the Ni-doped SnSe sensor exhibits remarkable selectivity and exceptional response stability. Through density functional theory (DFT) analysis, we demonstrate that the introduction of Ni atoms into the SnSe lattice generates deep impurity energy levels in the band structures, creating more active sites that enhance the interaction between the NO2 molecules and SnSe. Furthermore, these deep impurity energy levels contribute to the ultrafast response/recovery in detecting NO2 using Ni-doped SnSe. Our study presents a straightforward and effective strategy for the development of pollutant gas sensors that exhibit high sensitivity, low power consumption, and fast response/recovery.
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JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2025
·
IF 14.3
Huan Zhou,Yulong Hao,Chen Fan,Shiwei Zhang,Chen Wang,Kaiyi Wang,Jie Zhou,Shijie Hao,Ting Shu,Xuemei Lu,Bo Li,Yongqiang Yu,Guolin Hao
Two-dimensional (2D) noble transition-metal dichalcogenide materials (NTMDs) have garnered remarkable attention due to their intriguing properties exhibiting potential applications in nanoelectronics, optoelectronics, and photonics. The electronic structure and physical properties of 2D NTMDs can be effectively modulated using alloy engineering strategy. Nevertheless, the precise growth of wafer-scale 2D NTMDs alloys remains a significant challenge. In this work, we have achieved the controllable preparation of wafer-scale (2-inch) 2D PdS 2 x Se 2(1 − x ) nanofilms (NFs) with fully tunable compositions on various substrates using pre-deposited Pd NFs assisted chemical vapor deposition technique . High-performance photodetectors based on the PdS 2 x Se 2(1 − x ) NFs were fabricated, which exhibit broadband photodetection performance from visible to near-infrared (NIR) wavelength range at room temperature. Significantly, the PdS 0.9 Se 1.1 -based photodetectors display a responsivity up to 0.192 A W −1 and a large specific detectivity of 5.5 × 10 11 Jones for 850 nm light, enabling an excellent high-resolution NIR single-pixel imaging (SPI) without an additional filtering circuit. Our work paves a new route for the controlled synthesis of wafer-scale and high-quality 2D NTMDs alloy NFs, which is essential for designing advanced optoelectronic devices.
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ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Xiaowei Wu,Hong Wu,Jie Liu,Sikang Zheng,Qihong Xiong,Kaiqi Zhang,Hanjun Zou,Guiwen Wang,Guang Han,Guoyu Wang,Xu Lu,Bin Zhang,Xiaoyuan Zhou
SnSe-based compounds, as promising thermoelectric materials, are well-known for their intrinsically low thermal conductivity and outstanding thermoelectric performance. However, the suboptimal electrical transport capacity for n-type polycrystalline SnSe significantly hinders the improvement of its thermoelectric performance. In this work, an effective approach for enhancing the thermoelectric performance of n-type SnSe polycrystalline materials through ZnCl2 doping has been investigated. The enhanced density of state effective mass, which is related to the introduction of an impurity level and the facilitation of multivalley degeneracy after ZnCl2 doping, can significantly improve the electrical transport coefficient. Additionally, multiple defects caused by ZnCl2 doping, such as multiscale precipitates, amorphous tin chloride, and twin boundaries, effectively decrease the lattice thermal conductivity, leading to a subsequently enhanced quality factor. As a result, the SnSe0.95–2%ZnCl2 sample achieves a maximum zT of ∼1.3 at 873 K parallel to the pressing direction, being 4 orders higher than that of the pristine SnSe0.95 sample and better than that of most other halide-doped SnSe samples. This study presents a cost-effective and environmentally friendly strategy for improving the thermoelectric properties of n-type polycrystalline SnSe.
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Small
·
2025
·Vol. 21
·期 43
·e06749
·
IF 12.1
Hailan Li,Yuexing Chen,Chuanhao Li,Kanghua Li,Zhenghua Su,Jingting Luo,Zhuanghao Zheng,Guangxing Liang,Shuo Chen
Antimony selenide (Sb 2 Se 3 ), a narrow-bandgap semiconductor with strong light absorption, exhibits photoresponse up to ≈1050 nm due to its intrinsic 1.15 eV bandgap. To extend detection into the near-infrared (NIR, 700–1350 nm), Bi-alloyed (Bi x Sb 1-x ) 2 Se 3 is developed via vacuum sputtering and postselenization. Bi incorporation redshifts the absorption edge to 1350 nm, thereby broadening the photodetection window. At its peak external quantum efficiency of 905 nm, the (Bi 0.21 Sb 0.79 ) 2 Se 3 device achieves a responsivity of 1.01 A W −1 and detectivity of 9.77 × 10 12 Jones, surpassing the undoped counterpart, which shows 0.17 A W −1 and 8.87 × 10 12 Jones. Importantly, at 1310 nm, the (Bi 0.21 Sb 0.79 ) 2 Se 3 device maintains a detectable photocurrent with a responsivity of 0.27 µA W −1 and detectivity of 4.63 × 10 7 Jones, confirming the extended spectral response. Under 1064 nm pulsed excitation, it exhibits rise and decay times of 10 and 63 ns, respectively-nearly tenfold faster than the undoped version. These improvements result from Bi-induced bandgap modulation, which optimizes band alignment, suppresses interfacial trap states, and promotes anisotropic carrier transport along the quasi-one-dimensional ribbon structure. This work demonstrates a scalable and low-toxicity approach for achieving extended and fast NIR detection, well-suited for future multispectral imaging and biomedical sensing.
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ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Guanghui Peng,Chentao Zhang,Mingxuan Li,Jingyao Zhang,Chuangwei Wu,Zhongjun Qin,Liqiang Xu,Chuanqiang Wu,Hengjie Liu,Li Song,Xue Liu,Wei Gan
Polarization-based communication and on-chip imaging devices are crucial for the next generation of multifunctional devices. Due to their thickness-dependent properties and polarization detection capabilities, single-element two-dimensional (2D) materials have emerged as promising candidates. However, achieving devices with low static power consumption, tunable polarization-sensitive photodetection, and a broadband photoresponse remains challenging. Herein, we report high-performance polarization-sensitive photodetectors based on 2D selenium (Se), photodetectors that exhibit an excellent polarization ratio of 3.09, an ultralow dark current (∼10–12 A), a fast response time (∼3 ms), as well as air stability exceeding two months without encapsulation. Its unique intrinsically anisotropic atomic chain structure enables a polarization-sensitive photoresponse, which can be effectively modulated by gate voltage and power density. The polarized light-encrypted communication and polarization imaging based on a 2D-Se photodetector are further demonstrated. This study opens up a promising pathway for next-generation high-performance and multifunctional photodetectors.
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2025
·Vol. 36
·期 24
·1-13
·
IF 2.8
Yang Xinjuan,Li Yunkai,Li Xiaolong,Wang Lige,Liu Jing
Tin selenide (SnSe), a prominent narrow-bandgap p-type semiconductor in the IV-VI group, has garnered significant research interest due to its exceptionally low thermal conductivity and remarkable thermoelectric performance. This study systematically investigates the synergistic effects of zinc oxide (ZnO) particle size variation (30 nm, 200 nm, and 45 μm) and composite ratios on the thermoelectric transport properties of SnSe matrix composites fabricated through hydrothermal synthesis at 140°C with a 14 h reaction time. Experimental results demonstrate that the incorporation of 45 μm ZnO particles at an optimal 2% mass ratio substantially enhances the thermoelectric performance of ZnO/SnSe composites, achieving a peak thermoelectric figure of merit ( ZT ) value of approximately 1.5 ± 0.1 at 773 K, with an average ZT of 0.9 across 373–773 K. This significant improvement highlights the critical role of secondary phase particle size optimization in developing high-efficiency thermoelectric materials.
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Advanced Science
·
2025
·Vol. 12
·期 27
·2502832
·
IF 14.1
Kai-Yu Yang,Xiaoyuan Li,Yuanxin Jiang,Liangliang Wang,Kai Guo,Lei Miao,Junliang Chen,Jiye Zhang,Lin Li,Yusong Du,Guang-Hui Rao,Jun Luo,Jing-Tai Zhao
Segmentation is a widely adopted strategy to enhance the efficiency of medium- and high-temperature thermoelectric devices by capitalizing on the distinct properties of materials across various temperature ranges. Establishing a highly compatible matching relationship is crucial for maximizing conversion efficiency. In this study, the concepts of materials’ compatibility factor and relative current density into the screening process are emphasized for universal adaptability. The effectiveness and practicality of the theoretical model for optimal segmented combinations are validated through COMSOL finite element simulations and experimental results. A segmented thermoelectric power generation device is constructed that integrates the environmentally friendly n-type Mg 3 (Sb,Bi) 2 with the optimal segmented pairing of Bi 0.5 Sb 1.5 Te 3 -GeTe. Notably, at a temperature difference of Δ T = 440 K, this device achieves a maximum conversion efficiency of 10.4% and a peak output power of 0.41 W. These findings provide a solid theoretical foundation for the development of efficient combinations of thermoelectric materials.
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OPTICS EXPRESS
·
2025
·Vol. 33
·期 11
·22588-22597
·
IF 3.3
Tingting Zhang,Qing Ma,Qingping Li,Lanting Huang,Yuqiong Feng,Hongwei Duan,Xinlei Chen,Qinghua Li,Xiao Jin,Jinke Bai,Jinke Bai,Bing Xu,Bing Xu
Heavy metal-free ZnSe-based core-shell quantum dots (QDs) are promising emitting material for achieving violet-blue luminescence. Investigating the temperature-dependent variations in the photoluminescence (PL) properties of ZnSe-based QDs will enhance our understanding of the intrinsic factors that influence their diverse luminescence characteristics. Here we select the optimally synthesized ZnSe core QDs with three diameters (4.1, 5.2, and 8.3 nm) and ZnSe/ZnS core-shell QDs to study their temperature-dependent photoluminescence properties. As the sample temperature is increased, the PL intensity decreases, the emission energy redshifts, and the spectral become broader. We observe a reduction in the exciton- longitudinal optical (LO)-phonon coupling constant from 21.7 meV to 16.1 meV as the diameter of ZnSe core QDs increased from 4.1 nm to 8.3 nm. This decrease is associated with a narrower homogeneous broadening of the emission spectrum. Besides, the epitaxial growth of a ZnS wide bandgap shells onto the ZnSe core QDs can effectively isolate the photogenerated excitons away from the inorganic-organic interface, thus reducing the PL peak width and increasing the exciton binding energy of the QDs. Our research provides a valuable addition to the existing studies on the photoluminescence properties of ZnSe-based core-shell QDs.
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Crystals
·
2025
·Vol. 15
·期 7
·622
·
IF 2.4
Haoyu Zhao,Junliang Zhu,Zhonghe Zhu,Lin Bo,Wenying Wang,Xingshuo Liu,Changcun Li,Degang Zhao
Cubic phase SnSe-based materials have great potential in the field of thermoelectricity due to their reduced carrier scattering, increased band degeneracy, and ultra-low lattice thermal conductivity. Nevertheless, systematic studies on the influence of element doping on the thermoelectric properties of cubic SnSe-based materials are still relatively scarce. To enrich the research in this field, this work investigates the effects of Ge doping on the phase composition, electrical and thermal transport properties of cubic Sn0.50Ag0.25Bi0.25Se0.50Te0.50thermoelectric materials. X-ray diffraction (XRD) analysis confirmed that the Ge-doped samples exhibited a single cubic phase structure, while scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS) revealed a uniform distribution of elements within the samples. The results indicate that increasing the Ge doping content substantially enhances their electrical conductivity, albeit at the expense of elevated thermal conductivity. By optimizing the content of Ge-doping, the thermoelectric figure of merit (ZT) reached 0.74 at 750 K. Notably, while moderate Ge doping enhances electrical transport properties, excessive doping leads to a significant rise in thermal conductivity, ultimately constraining further thermoelectric performance gains.
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Journal of Materials Chemistry C
·
2025
·
IF 5.1
Xinying Liu,Xiangyu Huo,He Zhang,Xueying Cui,Ziyang Jiang,Huiling Zhu,Rui Liu,Haiqing Sun,Weiwei Zhang,Jianxu Ding
Perovskite single-crystal films (SCFs) offer superior optoelectronic properties over polycrystalline counterparts but suffer from inefficient carrier extraction due to thickness exceeding carrier diffusion length. To overcome this limitation, we constructed a novel Type-II heterojunction by integrating MAPbBr 3 SCFs (<50 µm) with alloyed CdSeS quantum dots (QDs). The staggered band alignment creates a builtin electric field that drives efficient carrier separation, thus the heterojunction photodetector achieves an ultralow dark current of ~10 -11 A at 0 V bias and a high light on/off ratio exceeding 10 5 . Under 445 nm illumination (2.228 mW/cm 2 ) at 1 V bias, the device demonstrates a remarkable switching ratio of 184,313 and a specific detectivity (D * ) of 3.8×10 13 Jones. This work highlights the synergy between perovskite and Ⅱ-Ⅵ compound semiconductors in enabling self-driven, high-sensitivity photodetection through tailored Type-II heterojunction.
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