ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Haowen Chen,Kaiyi Luo,Pingping Qian,Yixiao Deng,An Li,Qiang Sun,Lei Yang,Yuquan Liu,Zhengshang Wang,Guang-Kun Ren,Qian Cao,Jun Tang
The donor effect of polycrystalline n-type bismuth telluride (Bi2Te3) during sample preparation usually results in the peak thermoelectric figure of merit (ZT) at temperatures above 400 K, severely restricting its application in the room-temperature (RT) range. A leap in RT performance requires innovative strategies that replace conventional methods of regulating point defects with limited effectiveness. We demonstrate excellent thermoelectric performance with an RT figure of merit, ZT = 1.2, and a maximum ZT = 1.3 at 325 K, by regulating the high-potential barrier heterointerfaces composed of La2O3 nanoparticles (NPs) and Bi2Te2.7Se0.3 (BTS). The created energy barriers at grain boundaries scatter and localize carriers through O–Bi ionic bonding and O–Te hybridization, enhancing the density of states in adjacent regions and leading to a rapid rise in the RT Seebeck coefficient (from 148.67 μV K–1 to 222.84 μV K–1 at 300 K). Another aspect of La2O3 NPs, as the second term of nano-oxide, introduces multiscale defect-scattering phonons, thereby enhancing thermal performance. Finally, at temperature difference ΔT = 10 K, a maximum output voltage and power, Vmax = 239.73 mV and Pmax= 10.50 mW, can be achieved with the fabricated TE module. Our findings underscore the full potential for promoting the performance of thermoelectric materials in the lower temperature region via high-energy barrier interface engineering.
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DALTON TRANSACTIONS
·
2025
·Vol. 54
·期 30
·11601-11606
·
IF 3.3
Guansong Zheng,Wang Zhao,Xiaoyu Wu,Hongshan Wang,Yinxia Du,Juanjuan Lu,Xiao-dong Zhou,Junjie Li
Chalcohalides, combining the structural and property advantages of chalcogenides and halides, have been demonstrated to be a promising system for the design of advanced photoelectric functional materials. Herein, a new chalcohalide compound, Cs9Si8Se20Cl, has been rationally designed by introducing a nonlinear optical (NLO)-active [Si4Se10] T2-supertetrahedral unit into a halide system and synthesized experimentally by the flux method with CsCl as the flux. The compound is composed of [CsSe7Cl] polyhedral, [CsSe6] octahedral, and [Si4Se10] T2-supertetrahedral units. To the best of our knowledge, the [CsSe7Cl] mixed anionic unit appears for the first time in the compound, and the rare [Si4Se10] T2-supertetrahedral unit has been demonstrated to be a potential NLO-active unit for the design of infrared NLO materials with balanced optical properties. The theoretical calculations uncovered that the strong orbital hybridization between Si-3p, Se-4p and Cl-3p orbitals results in a wide band gap of 3.075 eV in the title compound. The results enrich the structural diversity of chalcohalide compounds and provide valuable insights into the design of wide band gap selenides.
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Small
·
2025
·Vol. 21
·期 37
·e02985
·
IF 12.1
Yi Chang,Wenyi Mao,Yu Zhang,Zirui Dong,Yunpu Zhang,Linke Li,Jiye Zhang,Jun Luo
Ductile thermoelectric materials and devices, capable of converting human body heat into electricity through the Seebeck effect, are emerging as a promising solution for powering wearable technologies. The recent discovery of Ag 2 S-based ductile thermoelectric materials has injected new vitality into this field, while the excess carrier concentration of these materials results in substantially lower thermoelectric performance compared to traditional inorganic thermoelectrics. Herein, by reducing the electronegativity of the anion sublattice and producing a silver deficiency at the cation site, an optimal carrier concentration is attained in the Ag 5.98 SSe 0.6 Te 1.4 material, leading to simultaneously high power factor (6.0 µW cm −1 K −2 ) and low total thermal conductivity (0.27 W m −1 K −1 ) at room temperature. Concurrently, it achieves a record thermoelectric figure of merit of 0.65 among Ag 2 S-based ductile thermoelectrics, while maintaining favorable phase stability and mechanical properties. A six-leg Ag 5.98 SSe 0.6 Te 1.4 flexible thermoelectric device exhibits a normalized maximum power density of 0.16 W m −1 , an order of magnitude higher than that of existing flexible organic as well as inorganic–organic hybrid thermoelectric devices, demonstrating significant progress in the development of ductile thermoelectrics.
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ACS Applied Nano Materials
·
2025
·
IF 5.5
Yingchun Dong,Jiongyue Hao,Yijie Shi,Yanqiao Ding,Wen Niu,Yuanting Yu,Hangyu Liu,Chun Huang,Yuhui He,Xiangshui Miao,Wei Hu,Yong He
Monitoring of reactive nitrogen by the Internet of Things (IoT) is urgently needed for sustainable nitrogen management to debilitate ill-health and achieve climate-stable. However, the real-time detection of nitrogen dioxide (NO2) at parts per billion (ppb) levels using a low-temperature chemiresistive gas sensor with high sensitivity and fast response and recovery remains a formidable challenge. In this study, we propose a facile one-step hydrothermal method for substituting nickel into tin selenide (SnSe) nanosheets, which effectively enhances the room temperature (RT) response/recovery speed and sensitivity of SnSe-based sensor toward NO2. The Ni-doped SnSe sensor with a vintage doping ratio exhibits an enhanced absolute response value of 20.06 times (58.99% vs 2.94%) toward 100 ppb NO2, compared to the pristine SnSe sensor, while also demonstrating a remarkable reduction in response/recovery time (10.32 s and 11.88 s vs 112.43 and 111.14 s). Moreover, the Ni-doped SnSe sensor exhibits remarkable selectivity and exceptional response stability. Through density functional theory (DFT) analysis, we demonstrate that the introduction of Ni atoms into the SnSe lattice generates deep impurity energy levels in the band structures, creating more active sites that enhance the interaction between the NO2 molecules and SnSe. Furthermore, these deep impurity energy levels contribute to the ultrafast response/recovery in detecting NO2 using Ni-doped SnSe. Our study presents a straightforward and effective strategy for the development of pollutant gas sensors that exhibit high sensitivity, low power consumption, and fast response/recovery.
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JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2025
·
IF 14.3
Huan Zhou,Yulong Hao,Chen Fan,Shiwei Zhang,Chen Wang,Kaiyi Wang,Jie Zhou,Shijie Hao,Ting Shu,Xuemei Lu,Bo Li,Yongqiang Yu,Guolin Hao
Two-dimensional (2D) noble transition-metal dichalcogenide materials (NTMDs) have garnered remarkable attention due to their intriguing properties exhibiting potential applications in nanoelectronics, optoelectronics, and photonics. The electronic structure and physical properties of 2D NTMDs can be effectively modulated using alloy engineering strategy. Nevertheless, the precise growth of wafer-scale 2D NTMDs alloys remains a significant challenge. In this work, we have achieved the controllable preparation of wafer-scale (2-inch) 2D PdS 2 x Se 2(1 − x ) nanofilms (NFs) with fully tunable compositions on various substrates using pre-deposited Pd NFs assisted chemical vapor deposition technique . High-performance photodetectors based on the PdS 2 x Se 2(1 − x ) NFs were fabricated, which exhibit broadband photodetection performance from visible to near-infrared (NIR) wavelength range at room temperature. Significantly, the PdS 0.9 Se 1.1 -based photodetectors display a responsivity up to 0.192 A W −1 and a large specific detectivity of 5.5 × 10 11 Jones for 850 nm light, enabling an excellent high-resolution NIR single-pixel imaging (SPI) without an additional filtering circuit. Our work paves a new route for the controlled synthesis of wafer-scale and high-quality 2D NTMDs alloy NFs, which is essential for designing advanced optoelectronic devices.
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Science Advances
·
2025
·Vol. 11
·期 50
·
IF 12.5
Yuting Wu,Hancheng Zhu,Zhigao Huang,Hao Zhang,Yinjuan Ren,Hua Shen,Yiming Wu,Yue Wang
Output power of a laser device critically defines the application prospects. Colloidal quantum dots (QDs) have emerged as auspicious laser media; however, the exclusively low-power emission obscures the practical deployment. Here, we resolve this challenge by designing an architecture of QD laser with unprecedented peak powers in megawatt regime. The achievement is enabled by integrating the QDs with exceptional gain metrics with a seed-amplifier laser structure. Transient spectroscopy and theoretical simulation reveal that the narrow emission linewidth and large biexciton binding energy of the QDs act synergistically to enable an enhanced gain performance with submonoexcitonic threshold and record high–saturated gain cross section. A Littman-Metcalf cavity is designed to deliver the continuously tunable laser emission, and the synchronous amplification reaches the megawatt output. The high-power QD laser exhibits high spatial coherence, linear polarization, and operational endurance, which has proved effective as the pump source for spectroscopic research.
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ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Xiaowei Wu,Hong Wu,Jie Liu,Sikang Zheng,Qihong Xiong,Kaiqi Zhang,Hanjun Zou,Guiwen Wang,Guang Han,Guoyu Wang,Xu Lu,Bin Zhang,Xiaoyuan Zhou
SnSe-based compounds, as promising thermoelectric materials, are well-known for their intrinsically low thermal conductivity and outstanding thermoelectric performance. However, the suboptimal electrical transport capacity for n-type polycrystalline SnSe significantly hinders the improvement of its thermoelectric performance. In this work, an effective approach for enhancing the thermoelectric performance of n-type SnSe polycrystalline materials through ZnCl2 doping has been investigated. The enhanced density of state effective mass, which is related to the introduction of an impurity level and the facilitation of multivalley degeneracy after ZnCl2 doping, can significantly improve the electrical transport coefficient. Additionally, multiple defects caused by ZnCl2 doping, such as multiscale precipitates, amorphous tin chloride, and twin boundaries, effectively decrease the lattice thermal conductivity, leading to a subsequently enhanced quality factor. As a result, the SnSe0.95–2%ZnCl2 sample achieves a maximum zT of ∼1.3 at 873 K parallel to the pressing direction, being 4 orders higher than that of the pristine SnSe0.95 sample and better than that of most other halide-doped SnSe samples. This study presents a cost-effective and environmentally friendly strategy for improving the thermoelectric properties of n-type polycrystalline SnSe.
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Small
·
2025
·Vol. 21
·期 43
·e06749
·
IF 12.1
Hailan Li,Yuexing Chen,Chuanhao Li,Kanghua Li,Zhenghua Su,Jingting Luo,Zhuanghao Zheng,Guangxing Liang,Shuo Chen
Antimony selenide (Sb 2 Se 3 ), a narrow-bandgap semiconductor with strong light absorption, exhibits photoresponse up to ≈1050 nm due to its intrinsic 1.15 eV bandgap. To extend detection into the near-infrared (NIR, 700–1350 nm), Bi-alloyed (Bi x Sb 1-x ) 2 Se 3 is developed via vacuum sputtering and postselenization. Bi incorporation redshifts the absorption edge to 1350 nm, thereby broadening the photodetection window. At its peak external quantum efficiency of 905 nm, the (Bi 0.21 Sb 0.79 ) 2 Se 3 device achieves a responsivity of 1.01 A W −1 and detectivity of 9.77 × 10 12 Jones, surpassing the undoped counterpart, which shows 0.17 A W −1 and 8.87 × 10 12 Jones. Importantly, at 1310 nm, the (Bi 0.21 Sb 0.79 ) 2 Se 3 device maintains a detectable photocurrent with a responsivity of 0.27 µA W −1 and detectivity of 4.63 × 10 7 Jones, confirming the extended spectral response. Under 1064 nm pulsed excitation, it exhibits rise and decay times of 10 and 63 ns, respectively-nearly tenfold faster than the undoped version. These improvements result from Bi-induced bandgap modulation, which optimizes band alignment, suppresses interfacial trap states, and promotes anisotropic carrier transport along the quasi-one-dimensional ribbon structure. This work demonstrates a scalable and low-toxicity approach for achieving extended and fast NIR detection, well-suited for future multispectral imaging and biomedical sensing.
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ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Guanghui Peng,Chentao Zhang,Mingxuan Li,Jingyao Zhang,Chuangwei Wu,Zhongjun Qin,Liqiang Xu,Chuanqiang Wu,Hengjie Liu,Li Song,Xue Liu,Wei Gan
Polarization-based communication and on-chip imaging devices are crucial for the next generation of multifunctional devices. Due to their thickness-dependent properties and polarization detection capabilities, single-element two-dimensional (2D) materials have emerged as promising candidates. However, achieving devices with low static power consumption, tunable polarization-sensitive photodetection, and a broadband photoresponse remains challenging. Herein, we report high-performance polarization-sensitive photodetectors based on 2D selenium (Se), photodetectors that exhibit an excellent polarization ratio of 3.09, an ultralow dark current (∼10–12 A), a fast response time (∼3 ms), as well as air stability exceeding two months without encapsulation. Its unique intrinsically anisotropic atomic chain structure enables a polarization-sensitive photoresponse, which can be effectively modulated by gate voltage and power density. The polarized light-encrypted communication and polarization imaging based on a 2D-Se photodetector are further demonstrated. This study opens up a promising pathway for next-generation high-performance and multifunctional photodetectors.
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JOURNAL OF ELECTRONIC MATERIALS
·
2025
·Vol. 54
·期 10
·8467-8474
·
IF 2.5
Kanwal Maheen,Li Zhihao,Liu Fulong,Sun Hao,Wang Hongxiang,Wang Hongchao
This study aimed to investigate the thermoelectric properties of Cu 4+ x TiSe 4 ( x = −0.04, −0.02, 0, +0.02, and +0.04) as a potential candidate for energy conversion applications. High-purity precursor materials were used to prepare specimens by solid-state reaction, followed by ball milling and hot pressing. X-ray diffraction analysis confirmed a cubic crystal structure with a lattice parameter of about 11.288 Å. Raman spectroscopy revealed unique vibrational modes associated with the Cu 4 TiSe 4 phase. Scanning electron microscopy and energy-dispersive x-ray spectroscopy revealed homogeneous microstructures with variable elemental compositions that corresponded to the expected stoichiometry. Electrical transport measurements revealed that the Cu-deficient sample ( x = −0.04) possessed the lowest resistivity and the highest Seebeck coefficient, leading to a power factor of 44.4 μW/mK 2 . The Cu-rich sample demonstrated the lowest lattice thermal conductivity of 0.51 W/mK at 624 K. This underlines the significant impact of precise stoichiometric control on electrical and thermal transport characteristics, establishing Cu 4 TiSe 4 as a promising material for further research toward advanced energy conversion technologies.
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ACS Applied Nano Materials
·
2025
·
IF 5.5
Mingrui Liu,Guangmin Li,Shunsheng Wei,Hongfei Liu,Gaoling Yang
Chiral semiconductor nanocrystals (NCs) represent a promising class of materials for various applications, including biological sensing, photonics, and spin-polarized devices. However, the comprehension of the mechanisms underlying ligand-induced chiroptical effects in NCs has been limited by the constraints of current theoretical and experimental models, particularly those involving simple spherical NCs. In this study, we examined the relationship between optical activity and band structures in core–shell dot-in-rod NCs, specifically CdSe@CdS, ZnSe/CdS@CdS, and ZnSeTe/CdS@CdS dot-in-rod NCs, which were functionalized with chiral ligands. By manipulating the wave function distribution of electrons and holes within the dot-in-rod NCs, we demonstrated through circular dichroism (CD) measurements that a reduction in the number of holes within the synthesized dot-in-rod NCs correlates with a decrease in the g factor. This conclusion was corroborated by theoretical calculations. Furthermore, the fabrication of chiral CdS-Au heterojunctions and the application of electron quenchers revealed that the reduction of the g factor also suggests the significant role of electrons in the generation of chirality. Our findings not only enhance the understanding of the fundamental origins of induced chirality effects in semiconductor NCs but also provide a clear methodology for the design of optimal optically active chiral NCs, thereby paving the way for future applications utilizing chiroptical materials.
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ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Guowei Huang,Ruichao Wang,Wenchao Wu,Wangle Xue,Peng Wang,Hongli Li,Zhenbin Gong
Nanofriction plays an important role in the performance and lifetime of n-type or p-type TMD-based semiconductor nanodevices. However, the mechanism of nanofriction in n-type and p-type TMD semiconductors under an electric field is still blurry. In this paper, monolayers of n-MoSe2 and p-WSe2 materials were prepared by chemical vapor deposition (CVD), and their nanofriction behavior under positive electric field was investigated. Atomic force microscopy (AFM) was used to analyze the nanofriction by the positive voltage applied through the needle tip: both the friction and the friction coefficient of MoSe2 increased with the increase of the applied voltage, while the friction and the friction coefficient of WSe2 decreased with the increase of the applied voltage. As the applied voltage increases, the friction force and energy dissipation exhibit corresponding trends in relation to the surface potential. The accumulation and dissipation of carriers represent significant factors influencing friction change. The diverse types of carriers give rise to variations in the friction laws. Our experiments have revealed the differences and mechanisms of friction in TMD materials dominated by different carrier types at positive voltages. It provides guidance for the application and modulation of n- and p-type two-dimensional semiconductor materials in the field of friction.
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