JOURNAL OF CRYSTAL GROWTH
·
2013
·
IF 1.552
Xionghui Zeng,Baixiang Han,Xiaodan Wang,Jianping Shi,Yu Xu,Jicai Zhang,Jianfeng Wang,Jinping Zhang,Ke Xu
Two kinds of GaN powders were grown using the chemical vapor transport process, which involved different Ga sources, i.e., Ga 2 O 3 and Ga metal. Although both GaN powders have a wurtzite crystal structure, which was confirmed by powder X-ray diffraction, their structural and optical properties were different. The powders prepared using the gallium nitridation method revealed a hexagonal morphology. The particles were approximately 2 μm in size, and we determined the large face (0002) by selective area electron diffraction , indicating that they had good crystallinity . In addition, the oxygen content was relatively low, similar to the GaN bulk grown by hydride vapor phase epitaxy . A strong band-edge luminescence was observed in the photoluminescent and cathodoluminescent spectra. However, the powders prepared using the Ga 2 O 3 nitridation method had an irregular morphology, and several tens of nanometer in size. The grain boundaries and the amorphous regions can be seen using high-resolution transmission electron microscopy imaging. Moreover, the oxygen concentration was relatively high. In this paper, we describe the different properties of these two kinds of powders using growth kinetics.
研究领域:
材料科学
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半导体物理
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晶体生长
·
光电子学
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DOI
高影响因子
JOURNAL OF SOLID STATE CHEMISTRY
·
2019
·
IF 2.291
Lulu Huang,Jun Guo,Zhen-Hua Ge,Yehua Jiang,Jing Feng
The In 2 O 3 (ZnO) 3 + x mol%Ga 2 O 3 ( x = 0, 0.1, 0.3, 0.5, 1) ceramics were synthesized by a solid-state reaction process. The effect of Ga doping on the thermoelectric properties of the In 2 O 3 (ZnO) 3 ceramics was studied. The phase structure and microstructure of all the bulk samples were checked by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM), respectively. Additionally, the minimum thermal conductivity of 1.45 Wm −1 K −1 at 973 K is obtained for 0.5% Ga-doped sample, which is 35% lower than that of the pristine sample. The significantly decreased thermal conductivity for Ga 2 O 3 -doped sample is due to the enhanced scattering of phonons , which is derives from the point defects caused by Ga-doping and the introduction of the second phase. As a result, the In 2 O 3 (ZnO) 3 +0.5 mol% Ga 2 O 3 sample achieved the highest ZT value of 0.23 at 973 K.
研究领域:
材料科学
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热电学
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陶瓷
·
固态化学
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DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2018
·
IF 5.091
Jin Liu,Wei Lu,Qian Zhong,Hongzhang Wu,Yunlin Li,Lili Li,Zhenling Wang
Semiconductor photocatalysis has become the focus of recent research on antibiotic treatment because it is a green and efficient technology. In this study, α-GaOOH with several novel microstructures has been synthesized at a low temperature and its subsequent thermal transformation. The influence of pH on the synthesis of α-GaOOH is studied, and the results indicate that pH played an important role in the microstructures of α-GaOOH and β-Ga 2 O 3 . All Ga 2 O 3 samples possess macro-mesoporous network structures and exhibits a remarkable photocatalytic activity for antibiotic degradation. The photoelectron chemical tests show that the separation efficiency of photogenerated charge carriers of Ga 2 O 3 -7.0 is higher than that of other Ga 2 O 3 . The enhanced photocatalytic activity of Ga 2 O 3 -7.0 is mainly ascribed to its morphology and oxygen vacancy . The active species trapping and photoluminescence measurement experiments indicate that OH and O 2 − are the major active species contributing to the photocatalytic process. This study will bring about the potential application in treatment of the antibiotic pollutants.
研究领域:
材料科学
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环境科学
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半导体光催化
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DOI
PubMed
高影响因子
ACS Sustainable Chemistry & Engineering
·
2020
·
IF 7.632
Jiaqi Guo,Fangliang Gao,Dongyang Li,Xingjun Luo,Yiming Sun,Xingfu Wang,Zhilin Ran,Qibao Wu,Shuti Li
Self-healing materials arouse much attention because of their recoverable morphologies during (dis)charge. Herein, we report an effective and practical synthesis strategy that can adequately utilize the self-healing feature to achieve advanced integrative performance. The hollow Ga2O3@nitrogen-doped carbon quantum dot (H-Ga2O3@N-CQD) nanospheres are synthesized via a facile approach as an anode material for lithium-ion batteries (LIBs). In this anode, the self-healing capability is derived from the Ga generated in the conversion reaction. On account of the feasible structure design and the binding N-CQD coating, the material structure can be well preserved during (dis)charging. As a result, the anode material delivers an initial discharge capacity of 1348.5 mAh g–1 at 0.1 A g–1 and an invertible capacity of 700.5 mAh g–1 under 0.5 A g–1 after 500 cycles. Endowed by the unique structural design, the H-Ga2O3@N-CQDs can deliver high-current-density circulation performance and long-term cycle stability, which has prospects for large-scale applications in high-energy-density LIBs. Meanwhile, the rational framework design offers new insights into the structure-building construction of self-healing materials.
研究领域:
材料科学
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电化学
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纳米科技
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能源存储
·
功能材料
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DOI
高影响因子
ACS Applied Nano Materials
·
2024
·
IF 5.3
Renjie Jin,Jinsong Liu,Shiwei Chen,Hongde Wang,Changsheng Niu,Xuehua Zhang,Chao Wu,Haizheng Hu,Kai Chen,Daoyou Guo,Shunli Wang
Solar-blind ultraviolet (UV) photodetectors play a critical role in ultraviolet communication and monitoring, effectively reducing false alarm rates and improving the accuracy of detection systems across various settings, which has garnered significant attention. Due to its exceptional solar-blind photon absorption coefficient, extremely stable structure, and ultrawide bandgap (4.5–4.9 eV), Ga2O3 has recently been identified as a desirable material for solar-blind UV photodetectors. Heterojunctions can separate photogenerated electron–hole pairs and their absorption edges can be controlled by selecting semiconductors with appropriate bandgaps, making them an important technology for light detection. In this work, a self-powered solar-blind UV photodetector has been fabricated using a mechanically separated β-Ga2O3/Lu2O3 core–shell microwire heterostructure. Our device demonstrates excellent solar-blind UV discriminability with self-powered photodetection, the device exhibits a responsivity of 38.8 mA/W, a detectivity of 1.22 × 1012 Jones, a switching ratio of 1.43 × 103, and a decay rate under UV irradiation of 62 ms, benefiting from both photovoltaic and photoconductive effects. Due to the high dielectric constant of Lu2O3 thin films at the nanoscale, enables more effective modulation of internal electric fields within heterojunction structures, thereby enhancing the response speed and sensitivity of photodetectors. The application of self-powered photodetectors in solar-blind communication systems has achieved promising results, which provides a viable strategy for Ga2O3-based high-performance self-powered photodetectors.
研究领域:
光电子学
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半导体材料
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光电探测器
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紫外通信
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纳米材料
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DOI
高影响因子
CERAMICS INTERNATIONAL
·
2024
·Vol. 50
·期 17
·31589-31597
·
IF 5.1
Yi Zhang,Zhexuan Gao,Yinyan Li,Huanping Wang,Shilong Zhao,Yang Shen,Degang Deng,Shiqing Xu
A novel near-infrared emitting Ga 2 O 3 : Ni 2+ phosphor was prepared, and its emission characteristics were improved through melting aid and charge balance. Under 410 nm excitation, the Ga 2 O 3 : Ni 2+ phosphor exhibits broadband near-infrared emission in the second region, with a peak at 1455 nm and a half maximum width of up to 300 nm. At the same time, the crystallinity of the sample was improved and the charge imbalance during substitution between Ga 3+ and Ni 2+ was eliminated through melting assistance and charge compensation. The results show that the emission intensity of Ga 1.97 O 3 : 0.015Ni 2+ , 0.015Ge 4+ phosphor (with added flux H 3 BO 3 ) is 10 times higher than that of Ga 1.985 O 3 : 0.015Ni 2+ sample. Its quantum yield is as high as 31.2 %, significantly higher than the reported Ni 2+ ion doped phosphors. According to the distinct absorptions of C–H, O–H as well as N–H bonds in the shortwave near-infrared range, samples of ethanol, n-hexanol, water and ammonia demonstrated different absorption peaks under the penetration of the constructed phosphor conversion light-emitting diode, which proved the potential application of Ga 2 O 3 : Ni 2+ , Ge 4+ -H 3 BO 3 phosphor in composition analysis and detection.
研究领域:
材料科学
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光学材料
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光子学
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光谱学
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固态化学
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DOI
高影响因子
ACS Sensors
·
2026
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IF 10.9
Linhu Jin,Kewei Zhang,Xi Chen,Zhongbao Luo,Yu Tong,Hongpeng Zhang,Jianyu Ling,Mingzhe Zhang
Selective detection of trace volatile organic compounds such as aniline (AN) and trimethylamine (TMA) remains challenging due to their similar chemical properties. Here, we address this discrimination using a Ga2O3/GaON heterojunction sensor that enables dual-mode detection with switchable selectivity: under 450 nm light at room temperature, it selectively detects AN, while at 160 °C, it exhibits strong specificity toward TMA, achieving 1 ppb detection limits for both. In situ infrared spectroscopy and density functional theory calculations show that distinct Fermi-level hybridization states activate dual N−H···O and N−Ga interfacial pathways. Integrated with an artificial neural network, the system classifies mixtures of AN and TMA with 93.5% accuracy. This work establishes a reconfigurable platform for selective VOC discrimination with potential applications in environmental monitoring and intelligent electronic olfaction.
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DOI
PubMed
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2026
·Vol. 37
·期 26
·2069
·
IF 3.2
Cheng Yi,Liu Tianshuo,Sun Nan,Wang Wenqian,Zhu Fanghao,Guan Yi,Gao Min
β-Ga 2 O 3 material with wide band gap and high radiation resistance, is potential in the application of X-ray radiation detections, and UV photoelectric detectors. The detector properties, such as sensitivity, response speed and stability, strong depend on the crystal quality of β-Ga 2 O 3 material. In this paper, β-Ga 2 O 3 thin films composed of crystalline grains were fabricated on sapphire substrates using the chemical vapor deposition technique. The thin films underwent annealing treatment in oxygen and a mixed ambient (5% H 2 +95% Ar), respectively. The effects of annealing on the structural, surface morphological and optical properties were investigated. X-ray photoelectron spectroscopy indicated the oxygen vacancy concentration decreased after annealing treatment. Overall, the β-Ga 2 O 3 thin films annealed in the hydrogen ambient displayed the best recrystallization characteristics, the process was discussed. The role of hydrogen quietly differed to oxygen during the annealing treatment, hydrogen promoted the decomposition of β-Ga 2 O 3 grains, followed by regrowth of β-Ga 2 O 3 with a preferred orientation, where decomposition and regrowth occurred competitively. The crystalline grains presented a gradual increase in size from as-grown to O 2 -annealed and H 2 -annealed β-Ga 2 O 3 thin films. Meanwhile, the grains annealed in hydrogen displayed a distinct alignment. The epitaxial relationships between the β-Ga 2 O 3 thin films and the sapphire substrate were investigated. Photoluminescence and absorption spectra were measured, the emission peaks fitted by Gaussian functions, and the deduced optical bandgap indicated the influence of the annealing treatment on the recrystallization of β-Ga 2 O 3 .
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高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Yujie Wang,Yurui Han,Yuefei Wang,Youheng Song,Shihao Fu,Chong Gao,Bingsheng Li,Aidong Shen,Yichun Liu
In this study, a PEDOT:PSS@graphene composite structure was engineered by incorporating graphene into PEDOT:PSS, thereby significantly enhancing its electrical conductivity. This composite layer was subsequently integrated with high-crystallinity β-Ga2O3 microwires (MWs), synthesized via chemical vapor deposition (CVD), to fabricate a self-powered deep-ultraviolet (DUV) photodetector. The device exhibited an ultra-low dark current of only 0.13 pA under a bias of 10 V, highlighting its superior noise suppression capability. More importantly, under 245 nm illumination at a bias of 0 V, the photodetector demonstrated a remarkable responsivity of 65 mA W−1, which represents enhancements by factors of 48 and 4 compared with PEDOT:PSS/β-Ga2O3 MW and graphene/β-Ga2O3 MW heterostructures, respectively. In addition, the device achieved a high specific detectivity of ∼1012 Jones. These outstanding photoresponse characteristics can be primarily attributed to the incorporation of graphene, which improves the conductivity of the PEDOT:PSS layer while simultaneously strengthening the built-in electric field at the heterojunction interface, thereby facilitating more efficient separation and transport of photogenerated carriers. Overall, this work demonstrates a promising strategy for designing organic–inorganic hybrid heterostructures and offers new insights into the development of high-performance, self-driven solar-blind photodetectors.
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高影响因子
Energies
·
2024
·Vol. 17
·期 6
·1397
·
IF 3
Yuanlin Liang,Haisheng Chen,Dianmeng Dong,Jiaxing Guo,Xiaona Du,Taiyu Bian,Fan Zhang,Zhenping Wu,Yang Zhang
Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor promising a wide range of important applications. However, mass production of high-quality crystalline Ga2O3still suffers from limitations associated with poor reproducibility and low efficiency. Low-temperature-grown amorphous Ga2O3demonstrates comparable performance with its crystalline counterparts. Lanthanide Er3+-doped Ga2O3(Ga2O3: Er) possesses great potential for developing light-emitting devices, photodetectors, solid-state lasers, and optical waveguides. The host circumstance can exert a crystal field around the lanthanide dopants and strongly influence their photoluminescence properties. Here, we present a systematical study of the impact of amorphous-to-crystalline transition on the upconversion photoluminescence in Ga2O3: Er thin films. Through controlling the growth temperature of Ga2O3: Er films, the upconversion luminescence of crystalline Ga2O3: Er thin film is strongly enhanced over 100 times that of the amorphous Ga2O3: Er thin film. Moreover, the variation of photoluminescence reflects the amorphous-to-crystalline transformation of the Ga2O3: Er thin films. These results will aid further designs of favorable optoelectronic devices integrated with lanthanide-doped Ga2O3thin films.
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高影响因子
Journal of Materials Chemistry C
·
2023
·
IF 6.4
Tianqi Zhao,Renagul Abdurahman,Qianting Yang,Ruxiangul Aiwaili,Xue-Bo Yin
Herein, we designed and prepared the persistent luminescence nanoparticles (PLNPs) of γ-Ga2O3:Cr,Ba rationally with Cr ions to achieve the near-infrared (NIR) emission at 700 nm and Ba ions to improve the emission intensity by inducing trap distribution. Energy transfer between γ-Ga2O3 and Cr ions occurs as the emission at 508 nm decreases and that at 700 nm increases along with the increased content of Cr ions. In combination with the trap depth, band gap of the host, and energy levels of Cr ions, an emission mechanism was proposed. Thus, NIR emission (700 nm), high brightness, large Stokes shift (446 nm), and long afterglow time (90 min) were achieved with the optimal γ-Ga2O3:0.0025Cr,0.0012Ba (γGCB) under excitation at 254 nm. The emission intensity of γGCB is temperature-dependent for non-contact ratiometric temperature sensing, and temperature linearity ranging from 300 to 420 K was achieved with an absolute sensitivity of 3.4% K−1. γGCB and γ-G2O3 are white under sunlight but exhibit red and green emissions under single excitation at 254 nm. Thus, Morse and binary codes are adapted to achieve encryption information transfer with the combination of γGCB and γ-G2O3. This work provides ideas for selecting a host, emission center, and trap for PLNPs with desirable properties and thus achieves extensive applications, as validated with ratiometric temperature sensing and encryption information transfer.
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高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2023
·
IF 4.1
Q. Zhang,J.X. Deng,R.D. Li,X. Meng,L.N. Hu,J.X. Luo,L. Kong,L.J. Meng,J. Du,Aleksei V. Almaev,H.L. Gao,Q.Q. Yang,G.S. Wang,J.H. Meng,X.L. Wang,X.L. Yang,J.Y. Wang
Ga 2 O 3 exhibits great potential for applications in solar-blind ultraviolet photo detector , high-power electronic devices and solid-state light-emitting due to its ultra-wide band gap and high Baliga figure of merit. Here, Ga 2 (N x O 1-x ) 3 films with varied nitrogen contents were prepared by the sol-gel technique. XRD analysis reveals that nitrogen doping contributes for growth of greater crystalline and SEM-EDS measurements confirm that the monoclinic crystal structure of Ga 2 (N x O 1-x ) 3 is maintained to doping level of 3.26wt%; FTIR information indicates that nitrogen prefers to substitute for the O 1 and O 2 site of Ga 2 O 3 ; XPS offers evidence that nitrogen tends to occupy oxygen vacancies and generate more gallium vacancies; UV-VIS shows that impurity defects appear above valence band , and the absorption position undergoes a red shift with nitrogen above 1.32wt%; PL shows Ga 2 (N x O 1-x ) 3 films can emit light of various colors under excitation at 325nm, and the acceptor level is at 1.63eV∼2eV above the valence band; The conductivity of Ga 2 (N x O 1-x ) 3 films is changed from n-type to p-type when nitrogen-doping is 0.96 wt% and the I–V curve composed of Ga 2 (N x O 1-x ) 3 and Ga 2 O 3 shows PDCR = 43 under the 254nm light. Therefore, the development of nitrogen-doped β-Ga 2 O 3 has potential opportunities for applications in photoelectric devices.
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