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MoSe2
ELECTROCHIMICA ACTA · 2016 · IF 4.803

Electrocatalytic Hydrogen Evolution Reaction of 2H MoSe2 Nanoflowers and 2H-MoSe2/α-MoO3 Heterostucture

Qingliang Feng,Kaiyue Duan,Hong Xie,Muyin Xue,Yongling Du,Chunming Wang

Two dimensional (2D) transition metal dichalcogenides have attracted intense potential application in catalytic because of its fantastic physical and chemical properties. But, how the metal oxide affects the catalytic performance of transition metal dichalcogenides was not clear yet, which always exists as main byproduct in the synthesized process of hydrothermal method . Herein, we report synthesis of 2H-MoSe 2 nanoflower and 2H-MoSe 2 /α-MoO 3 heterostructure by hydrothermal method. The chemical composition , morphology and crystalline structure of nano-composite were characterized by field-emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HR-TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The 2H-MoSe 2 nanoflower shows more positive onset overpotential around −150   mV and a current density of 32.5   mA   cm −2 at −300   mV. The smaller Tafel slope of 2H-MoSe 2 nanoflower is around 69   mV   dec −1 reveals the Volmer-Heyrovsky mechanism for HER. The results of linear scan voltammetry (LSV) curves demonstrated that both of them displayed good stability. This work demonstrated that the metal oxide can reduce the catalysis performance of transition metal dichalcogenides towards HER.

CAS / MDL: 7782-49-2
研究领域: 材料科学 · 电化学 · 纳米技术
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CERAMICS INTERNATIONAL · 2022 · IF 5.532

A strategy of combination reaction to improve electrochemical performance in two-dimensional Mo1-xWxSe2 battery-type electrode materials

Yang Gao,Kai Liu,Yingjun Wu,Caijuan Li,Qiang Lü,Guomei Zu

We report here a case of combination reaction between MoSe 2 and WSe 2 in certain proportions to improve electrochemical performance of Mo 1- x W x Se 2 compound materials. Two-dimensional (2D) Mo 1- x W x Se 2 flower-like crystals (x = 0, 0.25, 0.5, 0.75, 1) were synthesized using a solution synthesis method, and then Mo 1- x W x Se 2 -based electrodes were prepared using a powder pellet method. Their structure and electrochemical performance were respectively measured by X-ray diffraction (XRD), transmission electron microscope (TEM), X-ray photoelectron spectrometer (XPS), scanning electron microscope (SEM), and electrochemical workstation. The results indicate that only Mo 0.25 W 0.75 Se 2 -based electrode (x = 0.75), compared with other electrodes, delivers excellent specific capacity and stability with the capacity retention of 74.4% after 5000 charging-discharging deep cycles at the current density of 2 A g −1 in 1.0 mol/L KOH aqueous electrolyte, and exhibits a Coulombic efficiency almost 100% after 5000 cycles. This phenomenon is attributed to a situation that Mo 0.25 W 0.75 Se 2 active material has a quite different electronic band structure from the other remaining materials. It is therefore concluded that the combination reaction enables Mo 1- x W x Se 2 composite materials to realize their potential in electrochemical energy storage.

研究领域: 材料科学 · 电化学
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AIP Advances · 2024 ·Vol. 14 ·期 9 · IF 1.4

MoSe2 nanoflakes for zinc ion storage

Jiang Renzhi,Cai Yuncheng

Zinc-ion batteries (ZIBs) have become a highly desirable energy storage technology due to their significant advantages, such as low cost and high safety; however, the limitation of cathode materials has become a major factor restricting the development of ZIBs. Here, molybdenum diselenide (MoSe 2 ) nanoflakes were investigated for the first time as a novel cathode for ZIBs. The unique two-dimensional (2D) layered structure of MoSe 2 provides convenient channels and multiple active sites for zinc (Zn) ion diffusion. MoSe 2 showed a specific capacity of 30.1 mA h/g at 0.1 A/g as well as almost no capacity decay at 1.0 A/g after 1500 cycles. Further, the Zn–MoSe 2 coin cell successfully excited a light-emitting diode, showing good application prospects. Moreover, there was almost no aging of the battery after cycling, thus indicating satisfactory application potential. This work broadens the application of 2D materials in ZIBs.

CAS / MDL: 12058-18-3
研究领域: 材料科学 · 能源存储与转换
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JOURNAL OF MATERIALS SCIENCE · 2019 ·Vol. 54 ·期 24 ·14742-14751 · IF 3.442

Broadband photodetection of 2D Bi2O2Se–MoSe2 heterostructure

Yang Tao,Li Xing,Wang Liming,Liu Yiming,Chen Kaijian,Yang Xun,Liao Lei,Dong Lin,Shan Chong-Xin

Due to their unique structure and photoelectrical properties, two-dimensional (2D) materials have attracted enormous attention on next-generation optoelectronic devices. Recently, the newly discovered 2D layered Bi 2 O 2 Se has exhibited outstanding sensitivity and optoelectronic properties. However, the performance of these 2D layered Bi 2 O 2 Se photodetectors can be limited by the high dark currents. The suitable band structure of 2D MoSe 2 can form a type-II heterojunction with Bi 2 O 2 Se, which can reduce the dark current, modulate the interlayer transition energy and induce the charge spatial separation. Herein, we demonstrated a photodetector based on the heterojunction fabricated by van der Waals assembly between Bi 2 O 2 Se and few-layer MoSe 2 , showing visible to near-infrared detection range. Moreover, our results showed that the dark current of this photodetector was significantly reduced and the I on /I off ratio was greatly improved. Importantly, it exhibited a broad detection range from 405 to 808 nm with a responsivity of 413.1 mA W −1 , a high detectivity of 3.7 × 10 11 Jones (at 780 nm) at room temperature. Compared with the 2D Bi 2 O 2 Se photodetector, the photocurrent response and recovery time in the heterojunction photodetector was greatly reduced from 1.92/1.31 to 0.79/0.49 s at room temperature. Our results showed that 2D Bi 2 O 2 Se/MoSe 2 heterojunction has a great potential for broadband and fast photodetection.

研究领域: 凝聚态物理 · 纳米光电子学 · 材料科学 · 半导体器件 · 低维材料
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ADVANCED FUNCTIONAL MATERIALS · 2026 · IF 19.9

Negative and Positive Bipolar Photoresponse of CsPbBr3/MoSe2 Heterostructure

Xi Chang,Shuqing Chang,Zhen Zhao,Qi Shao,Daozheng Li,Minwei Zhang,Xiaoyang Xuan,Yueping Niu,Shangqing Gong,Min Qian

It is relatively mature to construct positive photoresponse devices nowadays, and there are also a variety of construction strategies for the novel negative photoresponse devices. However, this unipolar photoresponse photodetectors limit their applications in the field of optoelectronics, such as optical logic gates. In this work, we report a CsPbBr 3 /MoSe 2 semiconductor heterojunction photodetector with negative and positive bipolar photoresponse to different visible light bands. With the help of high transparency above 550 nm and the interfacial defects of co-evaporated CsPbBr 3 , the type-I CsPbBr 3 /MoSe 2 semiconductive heterostructure shows a negative photoresponse from 340 to 520 nm, with a responsivity of −2.15 A W −1 at 340 nm, and a positive photoresponse above 550 nm, with a responsivity of 19.69 A W −1 at 580 nm, and its application potentials in optical logic device based on the balanced ternary system has been demonstrated. The bipolar photoresponse designed in this work cleverly makes the usages of the optical transparency and defects of CsPbBr 3 perovskite material, the type-I heterostructure benefiting the exciton recombination, and the two-dimensional MoSe 2 serving as a broad band carrier transport layer, which opens up a new strategy for designing the bipolar photoresponse devices, revealing application potentials in the logic ternary system.

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ACS Applied Materials & Interfaces · 2024 · IF 8.3

Enhance Carrier Diffusion of Monolayer MoSe2 by Interface Engineering

Kun Zhao,Dawei He,Xiaojing Liu,Fangying Ren,Jiarong Wang,Yige Yan,Mohan Huang,Yongsheng Wang,Xiaoxian Zhang

Two-dimensional materials hold great potentials for beyond-CMOS (complementary metal–oxide–semiconductor) electronical and optoelectrical applications, and the development of field effect transistors (FET) with excellent performance using such materials is of particular interest. How to improve the performance of devices thus becomes an urgent issue. The performance of FETs depends greatly on the intrinsic electrical properties of the channel materials, meanwhile the device interface quality, such as extrinsic scattering of charged impurities, charge traps, and substrate surface roughness have a great influence on the performance. In this paper, the impact of the interface quality on the carrier diffusion behaviors of monolayer (ML) MoSe2 has been investigated by using an in situ ultrafast laser technique to avoid the surface contamination during device fabrication process. Two types of self-assembled monolayers (SAMs) are introduced to modify the gate dielectric surface through an interface engineering approach to obtain chemical–stable interfaces. The results showed that the transport properties of ML MoSe2 were enhanced after interface engineering, for example, the carrier mobility of ML MoSe2 was improved from ∼59.4 to ∼166.5 cm2 V–1 s–1 after the SAM modification. Meanwhile, the photocarrier dynamics of ML MoSe2 before and after interfacial engineering were also carefully studied. Our studies provide a feasible method for improving the carrier diffusion behaviors of such materials, and making them suited for application in future integrated circuit.

CAS / MDL: 2031-67-6 17984-89-3
研究领域: 材料科学 · 电子工程 · 光学工程
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CHEMISTRY-A EUROPEAN JOURNAL · 2017 ·Vol. 23 ·期 56 ·14004-14010 · IF 5.317

Flower-like MoSe2/C Composite with Expanded (0 0 2) Planes of Few-layer MoSe2 as the Anode for High-Performance Sodium-Ion Batteries

Jie Li,Hongxing Hu,Furong Qin,Peng Zhang,Lei Zou,Haobo Wang,Kai Zhang,Yanqing Lai

Sodium-ion batteries (SIBs) have caught considerable attention in last few years owing to the abundance of sodium in comparison to lithium. The commercial graphite anode is demonstrated unsuitable as an anode material for SIBs due to the larger radius of Na + ions, whereas the transition metal dichalcogenides (TMDs) show great potential as anodes for SIBs because of their high achievable capacity. The sluggish kinetics, large volume expansion, and aggregation of those materials however results in severe decay of the electrochemical performance. In this work, a flower-like MoSe 2 /C composite is synthesized with ethylenediamine and cassava starch (denoted as MoSe 2 /C cas ) and designed based on these principles: 1) expand the d-spacing of (0 0 2) planes of MoSe 2 to enhance the kinetics for the intercalation-deintercalation of Na + ions and 2) embed MoSe 2 into the carbon matrix to enhance the conductivity and restrict the volume expansion and aggregation of MoSe 2 . As a result, MoSe 2 /C cas exhibits superior cycle performance and rate capability for sodium storage. It shows durable long-life cycle capability with a reversible capacity of 360 mAh g −1 after 350 cycles at 0.5 Ag −1 . At the current density of 4 Ag −1 , the reversible capacity is still maintained at 266 mAh g −1 . Graphical Layered anodes : A simple one-pot hydrothermal synthesis followed by heat treatment forms composite flower-like anode materials of MoSe 2 and carbon. Expansion of the interlayer spacing enhances the intercalation kinetics and leads to improved cycling performance of the battery system.

研究领域: 材料科学 · 储能 · 电化学 · 纳米材料 · 电池技术
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JOURNAL OF ALLOYS AND COMPOUNDS · 2024 · IF 5.8

Enhancement of power conversion efficiency of Cu2ZnSn(S,Se)4 Solar Cells by pretreating Mo electrode with H2O2

Yue Liu,Chunkai Wang,Ding Ma,Mengge Li,Yuting Sun,Xiaofei Sun,Yan Zhu,Bin Yao,Yongfeng Li,Zhanhui Ding

It is proved that secondary phases, such as Cu 2 Se, and ZnSe etc., and MoSe 2 layer can form at Cu 2 ZnSn(S,Se) 4 (CZTSSe)/Mo electrode interface, due to that Mo electrode reacts with CZTSSe and Se vapor during selenization process. The secondary phases and MoSe 2 with inappropriate thickness can decrease power conversion efficiency (PCE) of CZTSSe solar cell. In this work, a simple method was proposed to suppress the reaction between CZTSSe and Mo, and to optimize the thickness of MoSe 2 . This was achieved by growing a layer of Mo oxide in situ on the Mo electrode surface through soaking the Mo electrode in H 2 O 2 . The Mo oxide layer consisted of MoO 3 , MoO x and MoO 2 . It could suppress the reaction between Mo and CZTSSe, thus preventing the formation of secondary phases in CZTSSe. By further tuning the soaking time, the thickness and density of the Mo oxide layer were optimized, resulting in an optimized thickness of the MoSe 2 layer and a significant improvement in the contact quality at both the front and back interfaces. This improvement is beneficial for suppressing carrier recombination and reducing contact resistance. Furthermore, the Cu/(Zn+Sn) ratio in CZTSSe was optimized, leading to an expansion of the depletion region width. As a result, the reverse saturation current density and series resistance decrease, while the photogenerated current density increases. This ultimately led to a rise in PCE from 7.66% for CZTSSe solar cells with Mo electrodes that were not soaked to 8.95% for those with Mo electrodes soaked for 20 s.

研究领域: 材料科学 · 能源技术
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Nanoscale · 2026 · IF 5.2

Synergistic optimization of thermoelectric performance in Ag2Se through MoSe2 decoration

Wajid Hussain,Lei Yang,Ziyang Zhou,Peijie Ma,Hu Hanwen,Kun Zheng

Interface engineering can effectively reduce thermal conductivity in thermoelectric materials, resulting in enhanced thermoelectric performance. However, achieving synergistically optimized thermal and electrical transport properties remains challenging. In this study, MoSe2 was decorated into Ag2Se by a two-step solvothermal/hydrothermal process combined with spark plasma sintering. Spark plasma sintering enables interfacial ion exchange, resulting in reduced carrier concentration and increased Seebeck coefficient. Meanwhile the decorated MoSe2 at the grain boundaries strongly scatters phonons, along with the reduced electrical conductivity, resulting in significantly reduced thermal conductivity. Consequently, the Ag2Se/4mol% MoSe2 composite achieves a notable maximum figure of merit of 1.07 at 390 K and a theoretical maximum conversion efficiency of 2% at a temperature difference of 45 K, indicating that MoSe2 doping substantially improves the thermoelectric characteristics of n-type Ag2Se. This nanostructured interface design approach may be useful for improving the performance of various thermoelectric materials.

CAS / MDL: 10102-40-6 16940-66-2
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Nano Research · 2014 ·Vol. 8 ·期 4 ·1108-1115 · IF 6.963

MoSe2 porous microspheres comprising monolayer flakes with high electrocatalytic activity

Zhang Yejun,Gong Qiufang,Li Lun,Yang Hongchao,Li Yanguang,Wang Qiangbin

A facile colloidal route to synthesize MoSe 2 porous microspheres with diameters of 400–600 nm made up of MoSe 2 monolayer flakes (∼0.7 nm in thickness) is reported. The solvents trioctylamine (TOA) and oleylamine (OAM) are found to play important roles in the formation of MoSe 2 microspheres, whereby TOA determines the three-dimensional (3D) microspherical morphology and OAM directs the formation of MoSe 2 monolayer flakes. The robust 3D MoSe 2 microspheres exhibit remarkable activity and durability for the electrocatalytic hydrogen evolution reaction (HER) in acid, maintaining a small onset overpotential of ∼77 mV and keeping a small overpotential of 100 mV for a current density of 5 mA/cm 2 after 1,000 cycles. In addition, similar 3D WSe 2 microspheres can also be prepared by using this method. We expect this facile colloidal route could further be expanded to synthesize other porous structures which will find applications in fields such as in energy storage, catalysis, and sensing.

研究领域: 材料科学 · 纳米技术 · 电催化 · 能量存储与转换 · 无机合成
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PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS · 2024 ·Vol. 261 ·期 9 ·2400185 · IF 1.5

Defect-Induced Localized Excitons and Raman Modes in Monolayer MoSe2

Zhiyuan Tang,Siwei Luo,Gencai Guo,Xixi Huang,Yan Peng,Xu Tang,Qiong Chen,Xiang Qi,Jianxin Zhong

In monolayer transition metal dichalcogenides, defects, such as chalcogen vacancies, play an important role in determining their properties. Herein, monolayer MoSe 2 with varying Se vacancy concentrations is successfully prepared by adjusting the amount of the precursors during the chemical vapor deposition synthesis. The Raman and low-temperature photoluminescence spectra are systematically studied at varying defect concentrations. Furthermore, it is found that Se vacancies introduce in-gap electronic states, leading to distinct localized exciton emissions, which can be engineered by controlling the concentration of Se vacancies. Density functional theory calculations indicate that the observed variations in localized exciton emission are attributed to the change of defect level with increasing defect concentration. The results provide insights into the influence of varying Se vacancy concentrations on defect-induced Raman and PL spectroscopy in MoSe 2 .

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Materials Science and Engineering B-Advanced Functional Solid-State Materials · 2021 · IF 4.051

Carbon-coated MoSe2/Mo2CTx (MXene) heterostructure for efficient hydrogen evolution

Yuanbo Tan,Mingjie Yi,Zhenye Zhu,Xueting Zhang,Ke Qin,Jiaheng Zhang,Rongshu Zhu

Herein, a mesh carbon-coated MoSe 2 /Mo 2 CT x hybrid material (MoSe 2 /Mo 2 CT x @C) is proposed as an effective catalyst for electrochemical hydrogen evolution reaction (HER). On one hand, the highly conductive Mo 2 CT x substrate enhanced charge transfer ability and effectively prevented the agglomeration of MoSe 2 nanosheets to expose abundant active sites. On the other hand, the carbon coating layer further improved the conductivity and effectively prevented Mo 2 CT x from being oxidized in the environment. Consequently, the unique MoSe 2 /Mo 2 CT x @C hybrid material exhibited excellent HER performance. Specifically, the MoSe 2 /Mo 2 CT x @C catalyst only required an overpotential of 108.3 mV to reach a current density of 10 mA cm −2 and displayed excellent durability under long-term cycling in acidic solution. This research highlights the potential applications of MXene-based composite materials in the energy field.

CAS / MDL: 50-99-7
研究领域: 材料科学 · 能源化学
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