ACS Applied Materials & Interfaces
·
2018
·
IF 8.097
Wangen Zhao,Fengyang Yu,Shengzhong Frank Liu
The development of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells determines the prospect of thin-film photovoltaic devices because of some of their strengths. However, the usual solution fabrication processes of CZTSSe absorbing layers are either too tedious or highly toxic. Here, we have developed an alternative strategy to prepare kesterite CZTSSe absorber films with a simple and low-toxicity solution process by replacing the commonly employed thiol-based compounds using the glycolic acid aqueous solution, which significantly reduces the environment pollution and toxicity, providing a possibility toward the green solvent process. The power conversion efficiency of 6.81% has been acquired based the aqueous solution-processed CZTSSe thin film via optimizing the fabrication technology.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Energy Chemistry
·
2022
·
IF 13.599
Licheng Lou,Yuancai Gong,Jiazheng Zhou,Jinlin Wang,Xiao Xu,Kang Yin,Biwen Duan,Huijue Wu,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng
Photo-generated carrier recombination loss at the CZTSSe/CdS front interface is a key issue to the open-circuit voltage ( V OC ) deficit of Cu 2 ZnSnS x Se 4− x (CZTSSe) solar cells. Here, by the aid of an easy-handling spin-coating method, a thin PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) layer as an electron extraction layer has been introduced on the top of CdS buffer layer to modify CZTSSe/CdS/ZnO-ITO (In 2 O 3 :Sn) interfacial properties. Based on Sn 4+ /DMSO (dimethyl sulfoxide) solution system, a total-area efficiency of 12.87% with a V OC of 529 mV has been achieved. A comprehensive investigation on the influence of PCBM layer on carrier extraction, transportation and recombination processes has been carried out. It is found that the PCBM layer can smooth over the CdS film roughness, thus beneficial for a dense and flat window layer. Furthermore, this CZTSSe/CdS/PCBM heterostructure can accelerate carrier separation and extraction and block holes from the front interface as well, which is mainly ascribed to the downward band bending of the absorber and a widened space charge region. Our work provides a feasible way to improve the front interfacial property and the cell performance of CZTSSe solar cells by the aid of organic interfacial materials.
研究领域:
材料科学
·
太阳能
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2020
·
IF 8.758
Xinan Shi,Yuxiang Wang,Hui Yu,Gang Wang,Lijian Huang,Daocheng Pan
The crystal quality of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film is crucially important to a high-performance CZTSSe solar cell. After selenization, a bilayer CZTSSe thin film consisting of a large-grain top layer and a small-particle bottom layer is usually observed according to the literature. In this work, a facile air-annealing pretreatment is conducted for a Cu2ZnSnS4 precursor thin film prior to selenization, which can lead to sodium diffusion into the CZTS precursor thin film and surface oxidization of the CZTS thin film. Our experimental results revealed that the Na prediffusion and the surface oxidation of the CZTS precursor thin film can significantly promote the crystal growth of the CZTSSe thin film, which can completely remove the small-particle bottom layer and form a large-grain-spanned CZTSSe thin film. As a result, a photoelectric conversion efficiency of 9.80% was achieved by this method.
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SOLAR ENERGY
·
2023
·
IF 6.7
Chunkai Wang,Bin Yao,Yongfeng Li,Zhanhui Ding,Ding Ma,Ting Wang,JiaYong Zhang,Dongxu Zhang,Yue Liu,Ruijian Liu
The physical properties of CdS buffer layers and the interface quality between CdS layer and Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber have a significant impact on the performance of CZTSSe solar cells. In the present work, five types of CZTSSe solar cells with conventional structure (denoted as CdS- x -cells, x = 55, 60, 65, 70 and 75) were fabricated by using CdS prepared at deposition temperatures of 55, 60, 65, 70 and 75 ℃, respectively, as buffer layer, and influence mechanism of the deposition temperature of CdS layers on power conversion efficiency (PCE) of the CdS- x -cells was investigated. It is found that the PCE of the CdS- x -cells increases from 8.52% to 10.36% as the deposition temperature rises from 55 to 60 ℃ but falls from 10.36% to 7.14% from 60 to 75 ℃. The analysis on the photovoltaic and electrical parameters indicates that the increase in PCE is predominantly derived from the decreased reverse saturated current density (J 0 ), followed by the decreased series resistance (R S ) and increased shunt resistance (R Sh ). The decreased PCE with the further increasing deposition temperature is mainly contributed from the increased J 0 , followed by the decreased R Sh and photogenerated current density (J L ). The influence mechanism of deposition temperature of the CdS layer on PCE is suggested via quantitatively analysis of influence of electrical, optical properties and crystal quality of CdS prepared at various deposition temperatures on J L and electrical parameters of CdS- x -cells. This work is helpful for improvement of PCE of CZTSSe solar cells by modification of properties of buffer layer.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry C
·
2021
·
IF 4.126
Jiayong Zhang,Ting Wang,Bin Yao,Zhanhui Ding,Yongfeng Li,Chunkai Wang,Jia Liu
High carrier recombination at the Cu2ZnSn (S, Se)4(CZTSSe)/CdS interface is the critical issue that results in the low power conversion efficiency (PCE) of CZTSSe solar cells. To reduce the recombination by optimizing the CZTSSe/CdS interfacial structure, we fabricated a Zn doped CdS (ZnxCd1 – xS) thin film with x of 0–0.32 and a CZTSSe solar cell with the ZnxCd1 – xS as the buffer layer. It is found that Zn substitutes for Cd in the x range of 0–0.26 and that some of the Zn substitutes for Cd and another Zn locates in the interstitial site of the CdS lattice in the x range of 0.26–0.32, which make the lattice mismatch between CZTSSe and ZnxCd1 – xS decrease in x of 0–0.26 and increase in x of 0.26–0.32. The conduction band offset at the CZTSSe/ZnxCd1 – xS interface is demonstrated by XPS to be a positive ″spike″-like type and increases from 0.11 to 0.43 eV as x increases from 0 to 0.32. PCE is increased from 5.00 to 7.73% by optimizing x. The increased PCE is attributed to increased open-circuit voltage (VOC) and filling factor (FF), while the decreased PCE is due to decreased VOC, FF, and JSC. By using quantitative analysis methods, the increased VOC and FF are mainly attributed to the increased shunt resistance (Rsh) and decreased reverse saturation current density (J0), and the decreased short-circuit current density (JSC) is attributed to the increased conduction band offset (CBO). The influence mechanism of Zn doping on Rsh, J0, and CBO is discussed.
研究领域:
材料科学
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能源科学
✓ 已验证
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2023
·Vol. 52
·期 8
·5422-5429
·
IF 2.1
Xu Jiaxiong,Wu Xiaoshuai
Chalcogenide Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a promising absorber material for photovoltaic applications. When CZTSSe thin film is deposited on an Mo substrate, a Mo(S,Se) 2 layer easily forms between the CZTSSe and the Mo, which is detrimental to the back contact property of the CZTSSe. This work proposes a useful way to inhibit the formation of Mo(S,Se) 2 by sputtering a CuCrO 2 layer on a Mo-foil substrate before the deposition of the CZTSSe. The effects of CuCrO 2 thickness on the crystalline structures, morphologies, and electrical properties of the fabricated samples were studied. The results showed that the insertion of the CuCrO 2 layer prevented the formation of Mo(S,Se) 2 . As the thickness of the CuCrO 2 increased, the thickness of the Mo(S,Se) 2 layer decreased. The Mo(S,Se) 2 layer was absent from the cross-sectional scanning electron microscopy image when the CuCrO 2 thickness exceeded 85 nm. The back contact resistance of CZTSSe decreased monotonously as the CuCrO 2 layer thickened due to the reduction in the Mo(S,Se) 2 layer thickness. Therefore, by inserting a CuCrO 2 layer to separate the CZTSSe and the Mo-foil, the formation of the Mo(S,Se) 2 layer between them was effectively suppressed, and the back contact properties of the CZTSSe thin film were significantly enhanced.
研究领域:
材料科学
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光伏技术
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薄膜太阳能电池
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2024
·
IF 6.3
Jiayong Zhang,Xiangqian Shen,Jun Xing,Shuguo Yu,Mengge Li,Ding Ma,Yuting Sun,Rong Wu,Bin Yao
Air-processed kesterite solar cells show excellent prospects for commercial application because they are suitable for large-scale production. This study shows how the power conversion efficiency (PCE) of (Cu, Ag) 2 ZnSn(S, Se) 4 solar cells can be improved by adjusting the annealing time during the selenization process at a low temperature of 70 °C. Enhancement of PCE is achieved when the annealing time is 240 s. The primary determinant of enhanced PCE is a reduction in reverse saturation current density (J 0 ) and ideality factor (A). Examination of depth characterization indicated that the decrease in J 0 and A can be ascribed to the inhibition of [2Cu Zn + Sn Zn ] defects cluster, which is mainly accountable for the band tail states, and the suppression of interface recombination .
研究领域:
光伏技术
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材料科学
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半导体物理
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可再生能源
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Xiaogong Lv,Chengjun Zhu,Yiming Wang,Lei Wang,Jianming Shi
Kesterite Cu 2 Zn 1- x Cd x Sn(S,Se) 4 (CZCTSSe) alloy thin films were fabricated by the water-based solution approach. The influence of Cd doping on the morphology, phase structure, element valence states, optical, electrical, and device performance were comprehensively examined. Cd was clearly alloyed into the Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber layer to form the CZCTSSe compound. By controlling the relative Cd content, band gap values ( E g ) of the CZCTSSe thin films were engineered between 1.10 eV and 1.21 eV. In addition, doping with Cd led to the enhancement of grain growth as well as improvement of the conductivity and photoelectric property of the absorber layer. In particular, the CZCTSSe ( x = 0.4) absorber layer exhibited a pure phase, larger grain size, compact and uniform topography, suitable band gap, Cu-poor and (Cd+Zn)-rich composition, higher conductivity and better photoelectric response. Power conversion efficiency (PCE) is improved from 4.37% of the CZCTSSe ( x = 0.0) device to 5.16% of CZCTSSe ( x = 0.4) device, and the increases of short-circuit current ( J sc ) achieved to 8.94 mA/cm 2 . The encouraging results suggest that doping of Cd is an effective way to improve CZTSSe film properties and promote device efficiency.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2021
·
IF 3.927
Qiulian Li,Shizhong Sun,Xinyu Li,Xiang Li,Xiu Liu,Daoyong Zhang,Na Yu,Shurong Wang
Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) is emerging as one of the most promising materials owing to its low-cost, non-toxicity, similar electronic properties with Cu 2 (In,Ga)Se 2 (CIGS). However, the current highest power conversion efficiency (PCE) for CZTSSe device is far below the CIGS because of the high open-circuit voltage (V oc ) deficit and low fill factor (FF). Here, we fabricated CZTSSe thin film from 2-methoxyethanol solutions and investigated the effects of different Sn (Sn 2+ vs Sn 4+ ) oxidation states of precursor solution and selenization temperature on the crystal quality of the CZTSSe thin film and device performances. By characterizations and analyses, we found that incomplete redox reaction caused by the off-stoichiometric component in Sn 2+ precursor solution led to the formation of detrimental secondary phases such as SnSe, Cu 2 Se, and SnSe 2 in the CZTSSe thin film. The existence of volatile SnSe could cause the formation of voids and thus affected the FF and V oc . The reaction from Sn 4+ precursor solution to absorber material avoided the formation of SnSe. Ultimately, the Sn 4+ thin film showed better features in terms of improving crystal quality and reducing V oc deficit that limited the efficiency of kesterite CZTSSe thin film solar cells. Besides, we demonstrated that an appropriate selenization temperature could further reduce the number of secondary phases and improve the surface morphology and crystallinity of the CZTSSe thin film. As a result, we obtained CZTSSe thin film solar cells with 8.27% PCE from the Sn 4+ precursor solution under the selenization temperature of 580 °C.
研究领域:
材料科学
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太阳能电池研究
✓ 已验证
产品关联
DOI
高影响因子
Nature Communications
·
2024
·Vol. 15
·期 1
·1-10
·
IF 14.7
Wang Jinlin,Shi Jiangjian,Yin Kang,Meng Fanqi,Wang Shanshan,Lou Licheng,Zhou Jiazheng,Xu Xiao,Wu Huijue,Luo Yanhong,Li Dongmei,Chen Shiyou,Meng Qingbo
Charge loss at grain boundaries of kesterite Cu 2 ZnSn(S, Se) 4 polycrystalline absorbers is an important cause limiting the performance of this emerging thin-film solar cell. Herein, we report a Pd element assisted reaction strategy to suppress atomic vacancy defects in GB regions. The Pd, on one hand in the form of PdSe x compounds, can heterogeneously cover the GBs of the absorber film, suppressing Sn and Se volatilization loss and the formation of their vacancy defects (i.e. V Sn and V Se ), and on the other hand, in the form of Pd(II)/Pd(IV) redox shuttle, can assist the capture and exchange of Se atoms, thus contributing to eliminating the already-existing V Se defects within GBs. These collective effects have effectively reduced charge recombination loss and enhanced p-type characteristics of the kesterite absorber. As a result, high-performance kesterite solar cells with a total-area efficiency of 14.5% (certified at 14.3%) have been achieved.
研究领域:
材料科学
·
太阳能
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ChemSusChem
·
2025
·
IF 6.6
Umar Farooq,Boyang Han,Usman Ali Shah,Fa Yang,Sheng Li,Yanping Song,Ali Hassan,Zhengquan Li,Jin Wang
The efficiency of earth-abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has been lagging behind the Shockley-Queisser limit primarily due to the presence of deep-level defects. These deep-level defects cause critical issues such as short carrier diffusion length, significant band tailing, and a large open-circuit voltage (VOC) deficit, ultimately leading to low device efficiency. To address these issues, we propose a post-fabrication defect healing strategy by dip-coating the CZTSSe film in dimethylformamide (DMF) solvent. Immersing the absorber layer in DMF (a polar solvent), neutralizes CuSn antisite defects through chemical bonding and facilitates the formation of a dense, smooth CZTSSe film with larger grain size. Deep-level transient spectroscopy revealed a remarkable increase in carrier diffusion length from 93 nm (control device) to 142 nm (champion device), confirming the beneficial effect of solvent-assisted post-treatment on mitigating CuSn antisite defects. The reduction in defect densities led to a decrease in VOC deficit by up to 289 mV, accompanied by an increased champion device efficiency of 11.4%. This work highlights the huge potential of the DMF post-treatment strategy for defect healing in CZTSSe solar cells.
研究领域:
材料科学
·
能源工程
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2023
·
IF 6.9
Jiayong Zhang,Bin Yao,Zhanhui Ding,Yongfeng Li,Ding Ma,Mengge Li,Yuting Sun,Chunkai Wang,Yue Liu,Xiaofei Sun
Although trace silver (Ag) substitution for Cu in Cu 2 ZnSn(S, Se) 4 (CZTSSe) offers benefits in improving open-circuit voltage (V OC ) of CZTSSe solar cells, its further development is still hindered by the fairly low short-circuit current density (J SC ) owing to the increase of bandgap (E g ) of the absorber layer . Herein, a strategy is demonstrated to mitigate the poor J SC arising from the Ag substitution by tuning the Cu 2+ /(Cu + +Cu 2+ ) percentage in the (Cu, Ag) 2 ZnSnS 4 (CAZTS) precursor solution . Depth characterization indicates that the appropriate Cu 2+ /(Cu + +Cu 2+ ) percentage in the CAZTS precursor solution increases the photogenerated charges separation and carrier transport processes for Ag-substituted CZTSSe (CAZTSSe) solar cells. Benefiting from this strategy, the power conversion efficiency (PCE) of 9.57% is achieved when the Cu 2+ /(Cu + +Cu 2+ ) is 50 at.%. The main factor for the improvement of PCE is due to the increase in photogenerated current density (J L ) and decrease in shunt resistance (R sh ). It is demonstrated that the increase in J L results from a widening in the depletion layer width (W d ) of the p-n junction and an increase in carrier lifetime, induced by optimization of the Cu 2+ /(Cu + +Cu 2+ ) percentage. While the decrease in R sh comes from the change of reaction pathways due to the change in Cu 2+ /(Cu + +Cu 2+ ) percentage.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
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