ACS Applied Nano Materials
·
2025
·
IF 5.5
Yanqi Ge,Fumei Yang,Yimiao Chen,Meng Wang,Weicheng Chen,Ye Zhang
van der Waals heterojunctions (vdWHs) have emerged as a promising strategy to improve the optoelectronic properties of materials for use in optoelectronic devices. In this study, independent tellurium nanotube (Te NT) structures with diameters of approximately 80 ± 10 nm were first synthesized. Subsequently, zero-dimensional (0D) bismuth quantum dots (Bi QDs) were uniformly deposited on the surface of one-dimensional (1D) Te NTs via a hydrothermal bottom-up assembly process, successfully constructing a mixed-dimensional Bi/Te van der Waals heterojunction (vdWH) with Bi QDs densely distributed around the Te NTs. The nonlinear optical properties of the heterojunction were systematically investigated. Due to the built-in electric field at the tellurium/bismuth interface, these vdWHs show significantly enhanced nonlinear absorption, lower saturation intensity, and improved carrier transport. These properties make Bi/Te vdWHs promising candidates for advanced optical applications. Furthermore, stable ultrashort pulses and bound-state solitons at a 1.5 μm wavelength were generated by incorporating Bi/Te vdWHs as saturable absorbers within an erbium-doped fiber laser cavity. Such findings highlight the potential of Bi/Te vdWHs as a versatile platform for developing high-performance optical devices with enhanced optoelectronic and nonlinear optical properties.
研究领域:
材料科学
·
光学工程
·
纳米技术
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DOI
高影响因子
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
·
2026
·Vol. 109
·期 3
·e70630
·
IF 4.2
Hengji He,Dainan Zhang,Youbin Zheng,Shuyang Ma,Kui Liu,Cheng Liu,Qinghui Yang,Huaiwu Zhang
In this study, Li x Ca 1−x W 1−0.75x Te 0.75x O 4 ceramics were synthesised using a non-stoichiometric co-doping strategy (Li/Te = 1:0.75), systematically revealing the synergistic effect of Li and Te. During doping, Li was introduced from the decomposed secondary Li 2 TeO 4 phase, which acted as a liquid-phase sintering aid. Density functional theory calculations confirmed that Te 4+ substitution for W 6+ enhanced the chemical bond strength and effectively passivated oxygen vacancies, promoting densification and improving dielectric properties. However, excessive doping led to the substantial decomposition/volatilisation of the secondary phase, where the volatilisation of Te outweighed its positive substitution effect, thereby degrading both structure and dielectric performance. Following optimisation, the Li 0.04 Ca 0.96 W 0.97 Te 0.03 O 4 ceramic sintered at 910°C exhibited optimal properties: εr = 9.86, Q× f = 89,613, τ f = −38.6 ppm/°C. The material also exhibited favorable dielectric characteristics in the terahertz range (0.2–1.2 THz, ε r : 4.97–6.36, tan δ: 0.009–0.0848), rendering it a potential candidate for dual-band applications in low-temperature co-fired ceramic technology.
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CHINESE JOURNAL OF CHEMISTRY
·
2021
·Vol. 39
·期 8
·2141-2146
·
IF 6
Chuqiao Hu,La Li,Guozhen Shen
Main observation and conclusion Ti 3 C 2 MXene serving as superior electrical conductors presents more specific performance such as transparency, conductivity than gold (Au), and even could form a heterostructure with active materials of the functional devices. Here, a Ti 3 C 2 MXene-Te microplate van der Waals heterostructure based transparent near-infrared photodetector (PD) is exploited. Compared with Au-Te PD, the on-off ratio of the Ti 3 C 2 -Te PD is improved by seven orders of magnitude and reaches 9.51 × 10 7 under 1064 nm laser illuminations. Benefiting from the utilization of flexible PET substrate and Ti 3 C 2 conductors in manufacturing PD devices, the Ti 3 C 2 -Te PD exhibits excellent flexibility with no noticeable response change after being bent for different states and times. Moreover, 63% transmittance of the fabricated PD devices over the 500—1000 nm wavelength range is obtained. All the above results demonstrate the tremendous potential in wearable optoelectronics.
研究领域:
材料科学
·
光电子学
·
纳米技术
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DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2014
·
IF 2.367
Zhitao Shen,Chunhua Luo,Rong Huang,Yiting Wang,Hui Peng,Jadranka Travas-sejdic
In this work, we systematically investigated the one-pot aqueous synthesis conditions of CdHgTe nanocrystals (NCs) using sodium tellurite (Na 2 TeO 3 ) as the Te source, and found that the added content of Hg 2+ and the initial pH value of reaction solutions significantly affected the photoluminescence quantum yield (PL QY) of alloyed CdHgTe NCs. When the concentration of Cd was 1.0 mmol L −1 , the mole ratio of Cd/Te/Hg/MPA was 1:0.5:0.05:2.4, and the initial pH value of the reaction solution was about 8.78, the PL QY of as-prepared CdHgTe NCs was up to 45%. Characterization by HRTEM and XRD confirmed the crystalline nature of CdHgTe NCs. Compared to other synthetic approaches of CdHgTe NCs, our experimental results indicate that Na 2 TeO 3 could be an attractive alternative Te source to directly synthesize CdHgTe NCs in aqueous media.
研究领域:
材料科学
·
纳米技术
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DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2022
·Vol. 33
·期 19
·15894-15903
·
IF 2.779
Hu Zeqing,Xu Huihong,Lin Yangjian,Liu Yu,Xu Junsheng,Li Zhou,Song Jiming
Currently, Cu 2 GeS 3 has been obtained through solid-state reaction. However, the pure phase Cu 2 GeS 3 synthesized still faces challenges due to the low boiling point of the sulfur element. Herein, we have prepared pristine Cu 2 GeS 3 by a two-step method. Firstly, the pure phase GeS 2 was synthesized by solvothermal method and then used the freshly as-synthesized GeS 2 as raw material to react with copper powder to fabricate pure phase Cu 2 GeS 3 . Further, the thermoelectric properties of Cu 2 GeS 3 crystal have been explored. At room temperature, the electric resistance value measured by multimeter was ~ 2634 Ω for intrinsic Cu 2 GeS 3 crystal, which exceeded the instrument (electrical conductivity/Seebeck coefficient) test range of 0–2000 Ω, so there is no relevant report in the thermoelectric field about Cu 2 GeS 3 crystal. In order to improve its conductivity, Cu 2 GeS 3 crystal is alloyed with a small amount of Te powder to obtainable Cu 2 GeS 3− x Te x samples, which have obvious thermoelectric properties. By adjusting the content of Te, finally, the electrical conductivity of the Cu 3 GeS 2.6 Te 0.4 sample reached 364.20 S m −1 and the figure-of-merit ZT max value of ~ 0.12 were obtained at 816 K.
研究领域:
材料科学
·
能源科学
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DOI
高影响因子
ACS Nano
·
2023
·
IF 17.1
Hongmin Liu,Pankun Wu,Ronghao Wang,Huanjiang Meng,Yaqi Zhang,Weizhai Bao,Jingfa Li
The combination of photo-driven self-powered supplies and energy storage systems is considered as a promising candidate to solve the global energy dilemma. The photo-absorber and the energy storage material are integrated into the photocathode to effectively achieve a high-energy and high-efficiency energy system. In this work, we report the customized Janus-jointed photocathode design (integrating with highly efficient halide perovskite and tellurium composite electrode) and introduce it into the aqueous zinc–tellurium battery. The well-matched energy level of the Janus-jointed photocathode ensures the conversion of the photoenergy into electrical energy by transferring the photoexcited charge between each. As expected, in the photo-assisted recharging model, the decreased 0.1 V charge voltage and the extra 362 mA h g–1 at 100 mA g–1 demonstrated the significant merits of saving energy for such a photo-rechargeable Zn–Te (PRZT) battery. When the current density is 1000 mA g–1, the specific capacity of the prepared photocathode is 83% higher than that under dark conditions. More importantly, the photogenerated charge by the perovskite under light illumination could also directly photocharge the battery with no external current, indicating the self-powering traits. The rational design in this work is believed to provide a sustainable mode for efficient charging of the aqueous PRZT battery.
研究领域:
材料科学
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能源工程
·
化学
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DOI
PubMed
高影响因子
ACS Applied Energy Materials
·
2025
·
IF 5.5
Chao Wu,Xin Miao,Aojie Zhang,Mingxing Guo,Jianxiang Lin,Anjun Jin,Wenhao Fan,Shaoping Chen
Despite the excellent thermoelectric properties of Te, the element diffusion and reaction at the interface with the metal electrodes introduce a large contact resistivity (ρc), significantly reducing the conversion efficiency (η) of the device. Therefore, suitable barrier layers are being sought to optimize the connection between Te and metal electrodes. In this study, a Sn–Te alloy barrier layer is reported based on interfacial reaction. The results indicate that there is no reaction layer or microscopic defects at the interface of the SnTe/Te0.985Sb0.015 device. Additionally, the η of the single-leg device is approximately 4.7% at a temperature difference of 230 K. Notably, this ηmax is 100% higher than that of the Ni/Te0.985Sb0.015/Ni device. Meanwhile, the interface exhibits good thermal stability, with no significant changes observed in ρc, η, and interface microstructure after aging at 523 K for 18 days. This work provides valuable insights into optimizing the interface between thermoelectric materials and metal electrodes, which could lead to the development of more efficient and stable thermoelectric devices.
研究领域:
材料科学
·
热电学
·
能量转换
·
固体物理
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DOI
高影响因子
Microstructures
·
2025
·Vol. 5
·期 3
·N
·
IF 9
Fulong Liu,Yuqing Sun,Zhihao Li,Panpan Peng,Chunlei Wang,Hongchao Wang
Quaternary chalcogenides have garnered considerable interest within the field of thermoelectric due to their intrinsic low thermal conductivity, wide bandgap and high element enrichment advantages. In this work, the thermoelectric performance of Cu2MnSnSe4 was enhanced by co-optimizing the carrier concentration and lattice thermal conductivity through self-doping with Cu and doping with Te. A series of Cu2MnSnSe4 and Cu2.1Mn0.9SnSe4-xTex (x = 0, 0.01, 0.05, 0.10) samples were prepared by ball-milling and hot-pressing methods. The carrier concentration of the samples was significantly increased after Cu self-doping, leading to optimized electrical transport performance. The notable reduction in lattice thermal conductivity was attributed to the scattering effect caused by Te substitution-induced point defects. At 673 K, the lattice thermal conductivity of the Cu2.1Mn0.9SnSe3.9Te0.1 sample obtained the lowest value of 0.62 W m-1K-1. Finally, it achieved a maximum zT ~ 0.5 at 673 K in the Cu2.1Mn0.9SnSe3.9Te0.1 sample, roughly twice that of the Cu2MnSnSe4 sample.
研究领域:
材料科学
·
热电学
·
固体物理
·
能量转换材料
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DOI
高影响因子
Advanced Electronic Materials
·
2018
·Vol. 5
·期 1
·1800548
·
IF 5.466
Changzeng Yan,Tianhang Yu,Chao Ji,Dae Joon Kang,Ning Wang,Rong Sun,Ching-Ping Wong
Ever-increasing packaging and power densities of modern electronic devices in the present “More-than-Moore” technology era demand higher performance thermal interface materials (TIMs). However, conventional composite TIMs require higher loading to achieve better thermal conductive property, resulting in a mechanical problem. The poor wetting property of matrix loading materials further increases the interfacial thermal resistance (ITR). In this work, a one-step hydrothermal method is employed to grow 2D molybdenum disulfide (MoS 2 ) nanosheets on a tellurium (Te) nanowire skeleton and silver (Ag) nanoparticles are further decorated on MoS 2 nanosheets via the photoreduction method. The in-plane thermal conductivity of the final nanocomposite reaches as high as 10.4 W m −1 K −1 , which is 4,160% higher than that of a pure epoxy resin and one order of magnitude higher than that of conventional polymeric nanocomposites. The 3D interconnected heat transferring network of Te/MoS 2 /Ag greatly enhances the thermal stability of the composite in practical applications. The rational materials design concept may contribute to the development of new types of high-performance thermal management materials.
研究领域:
材料科学
·
热管理技术
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DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2026
·
IF 6.6
Wendi Huang,Beibei Huang,Jingjun Bi,Junzhou Chen,Yufan Chen,Jianjun Yang,Jian Zhong,Ping Liu,Qingguo Gao
Recently, tellurium (Te), a p-type semiconductor material, has attracted tremendous interest in electronics and large-scale integrated circuits owing to its high hole mobility and excellent air stability. Although evaporated Te thin films have shown great potential for large-scale p-type transistors, further research is needed to improve the quality of Te thin films and enhance their electrical performance. In this work, we demonstrate that a simple ultraviolet/ozone (UV-O 3 ) pretreatment of Si/SiO 2 substrates can significantly reduce surface roughness and improve crystallinity in TeO x /Te films, as confirmed by grazing-incidence X-ray diffraction (GIXRD), Raman spectroscopy and atomic force microscopy (AFM). The improved structural properties lead directly to a remarkable improvement in device electrical performance. The hole mobility of devices fabricated on UV-O 3 -pretreated substrates increases markedly from 27.4 cm 2 /V·s to 75.8 cm 2 /V·s compared with those on untreated substrates. In addition, the subthreshold swing, hysteresis, contact resistance, interface trap state density and threshold-voltage stability under both negative bias stress (NBS) and positive bias stress (PBS) are all substantially improved. This work provides a simple and easily implementable approach to enhance the electrical performance of p-type Te-based transistors, offering valuable guidance for their application in next-generation electronics.
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高影响因子
JOURNAL OF LUMINESCENCE
·
2022
·
IF 4.171
Shuaichen Si,Xiaoxuan Guo,Weijiang Gan,Xuejie Zhang,Bang Lan,Man-Rong Li,Jing Wang
Lead-free perovskite variants have attracted wide interest because of the lead-free feature and broadband emission originated from self-trapped exciton (STE), which show great advantages in lighting applications. Especially the tetravalent Te-doped A 2 B(IV)X 6 perovskite variants, which have efficient excitation in the blue range and strong emission in the yellow region as well as high photoluminescence quantum yield , is particularly suitable for solid-state lighting. Despite these fascinating properties, it is still not suitable for high-power illumination due to its poor thermal resistance and severe light saturation feature at high laser power density. Herein, we develop a lead-free perovskite variant Rb 2 SnCl 6 :Te based phosphor-sapphire composite (PSC) fused with low-melting glass through a simple screen-printing and sintering process . The as-prepared PSC shows yellow-green emission at 570 nm, due to the combination of Te luminescent center and Jahn-Teller-like STE, and exhibits a high thermal conductivity of 37.06 W m −1 K −1 . Benefitted from the high thermal conductivity of the sapphire substrate , the PSC exhibits the great improvement in light saturation behavior, heat dissipation, and chromaticity stability withstand the high-power blue laser , compared to Rb 2 SnCl 6 :Te phosphor, finally contributing to an excellent PLQY of 70.3%. In addition, by combining the PSC with the blue laser, a warm white light with a CIE chromaticity coordinate of (0.368, 0.344), and a correlated color temperature of 4129 K is achieved. These results demonstrate that this simple and low-cost fabrication method is expected to be widely used for various phosphors and the PSC can own excellent application prospects in high-power laser-driven lighting.
研究领域:
材料科学
·
光学工程
·
固态照明
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DOI
高影响因子
INORGANIC CHEMISTRY
·
2026
·
IF 4.6
Huanran Zheng,Yuchao Wang,Jing Zhang,Yu Bai,Yingbi Chen,Peiyao Yang,Md Raziun Bin Mamtaz,Danni Deng,Zechao Zhuang,Houzheng Ou,Meng Wang,Guozhao Fang,Haozhi Wang,Xiang Xiong,Dingsheng Wang,Chuan Zhao,Yongpeng Lei
The high desorption energy barrier for OH– hinders the improvement of the oxygen reduction reaction (ORR) and related devices. Here, an Fe-based atom pair catalyst for ORR is discovered through high-throughput density functional theory calculations. The atomic Te around the Fe1–N4 site (Te1–N2–Fe1–N2) served as an electron pump to achieve charge dilution, contributing to an onset potential of 1.03 V and a half-wave potential of 0.94 V. Moreover, a kinetics current density of 32.4 mA cm–2 and remarkable durability up to 20000 continuous electrolysis cycles (1/4 activity decay that of the Fe1–N4 site) were achieved. An ab initio molecular dynamics simulation revealed the formation process of Fe–Te dual atoms. In situ characterization and comparative experiments verify that the charge dilution toward a single Fe site around atomic Te resulted in promoted O2 conversion and accelerated *OH desorption. The corresponding Al-air batteries showed an open-circuit potential of 1.62 V, a power density of 138.1 mW cm–2, and stable voltages during the long-term discharging process (446 h at 10 mA cm–2 and 270 h at 20 mA cm–2). The study demonstrates the single-atom electron pump as an effective strategy for handling the charge density around single-atom sites for electrocatalysis.
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高影响因子
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