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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2023 · IF 5.7

Isoelectronic Re-Ge-codoped higher manganese silicides with enhanced thermoelectric properties via band optimization, charge transfer, and phonon scattering

Zhiliang Li,Zheng Su,Hongxia Zhang,Qing Wang,Jianglong Wang,Xin Qian,Qian Cao,Zhihai Ding,Jing-Feng Li,Shufang Wang

Higher manganese silicide (HMS) is a naturally abundant, environmentally friendly, and mechanically robust P-type thermoelectric (TE) semiconductor. Isoelectronic doping elements Re and Ge are used to partially occupy cation (Mn) and anion (Si) sites, respectively. Compared with the single Re-doped strategy, TE performance is further improved in the isoelectronic double-doped Mn 0.96 Re 0.04 (Si 0.96 Ge 0.04 ) 1.79 composition. The electrical conductivity (∼54.2 × 10 3 S m –1 at 823 K) is double that of pure HMS (∼26.1 × 10 3 S m –1 ), whereas the power factor increases from ∼1.42 × 10 –3 W m –1 K –2 to ∼1.80 × 10 –3 W m –1 K –2 due to the increase in carrier concentration caused by the decreased band gap (from 0.82 eV to 0.74 eV), as well as the embedding of the Si, Ge nanodispersions with low work functions. Furthermore, the substitution of Re and Ge increases the amounts of lattice defects, and the presence of nanoscale Ge precipitates cause the broadband phonon-scattering effect in the HMS matrix. Finally, the lattice thermal conductivity at 673 K decreases from ∼2.18 W m –1 K –1 to ∼1.60 W m –1 K –1 . The zT value at 823 K increases by ∼36% from 0.45 to 0.61. The strategy of cation and anion double doping can effectively improve the TE properties of materials, which has significance for the optimization of other materials.

研究领域: 材料科学 · 热电学 · 半导体物理
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CHEMICAL ENGINEERING JOURNAL · 2024 · IF 13.3

Pseudo-photoelectric cascade conversion endowing photosensitive Janus ionogel for solar energy harvesting and sensing

Jiale Sun,Yanan Liu,Junjie Wei,Peng Wei,Tao Chen

Ionic conductive gel based self-powered sensor has attracted much attention in Internet of Things era, due to its softness, versatility, electrical conductivity, iontronics and responsiveness. However, its multi-scene application is limited by few types of these perceptible signals. Herein, a photosensitive Janus ionogel with pseudo-photoelectric effect based on cascade conversion is reported, with seebeck coeffect of 19.5 mV K −1 and ZT value of 0.63. Significantly, the photosensitive Janus ionogel can generate different temperature gradients on the different intensity of sunlight, and convert solar energy into electric energy by the “light-thermal-electric” cascade conversion, demonstrating its great potential in solar energy utilization and light sensing. This investigation paves a promising and versatile way to construct photosensitive conductive materials for next-generation solar self-powered devices.

研究领域: 材料科学 · 能量转换 · 传感器 · 纳米技术
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ACS Applied Materials & Interfaces · 2015 · IF 6.723

A Facile Surfactant-Assisted Reflux Method for the Synthesis of Single-Crystalline Sb2Te3 Nanostructures with Enhanced Thermoelectric Performance

Heng Quan Yang,Lei Miao,Cheng Yan Liu,Chao Li,Sawao Honda,Yuji Iwamoto,Rong Huang,Sakae Tanemura

Antimony telluride (Sb2Te3) and its based alloys are of importance to p-type semiconductors for thermoelectric applications near room temperature. Herein, we report a simple, low-energy intensive, and scalable surfactant-assisted reflux method for the synthesis of Sb2Te3 nanoparticles in the solvent ethylene glycol (EG) at low temperatures (120–180 °C). The formation mechanism of platelike Sb2Te3 nanoparticles is proposed. Also, it is found that the size, shape, and chemical composition of the products could be controlled by the introduction of organic surfactants (CTAB, PVP, etc.) or inorganic salts (EDTA-Na2, NaOH, etc.). Additionally, the collected Sb2Te3 nanoparticles were further fabricated into nanostructured pellets using cold-compaction and annealing techniques. Low resistivity [(7.37–19.4) × 10–6 Ω m], moderate Seebeck coefficient (103–141 μV K–1), and high power factor (10–16 × 10–4 W m–1 K–2) have been achieved in our Sb2Te3-nanostructured bulk materials. The relatively low thermal conductivity (1.32–1.55 W m–1 K–1) is attained in the nanobulk made of PVP-modified nanoparticles, and values of ZT in the range of 0.24–0.37 are realized at temperatures ranging from 50 to 200 °C. Our researches set forth a new avenue in promoting practical applications of Sb2Te3-based thermoelectric power generation or cooling devices.

研究领域: 材料科学 · 纳米技术 · 热电学
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ADVANCED MATERIALS · 2025 · IF 26.8

Synergistic Microstructure and Composition Engineering via Na2S Enables High-Performance Porous PbTe Thermoelectrics with Ultrahigh Device Power Density

Shaoqing Lu,Zhengyi Zhu,Weite Meng,Jian Wang,Lulu Huang,Mengyao Li,Aziz Genç,Siqi Huo,Khak Ho Lim,Andreu Cabot,Yucheng Wu,Yu Zhang,Min Hong,Jian Yan,Yu Liu

Thermoelectric (TE) materials, capable of directly converting heat into electricity, offer a promising route for sustainable energy recovery. However, practical deployment is limited by the difficulty in simultaneously optimizing electrical and thermal transport properties. In this study, a synergistic microstructure-composition co-design strategy for enhancing the performance of PbTe-based TEs via Na 2 S-assisted solid-state synthesis is presented. The thermal decomposition of Na 2 S not only introduces hierarchical porosity but also facilitates initial Na doping, enabling the concurrent optimization of phonon scattering, carrier concentration, and band convergence. The optimized composition, Pb 0.97 Na 0.03 Te-1.0%Na 2 S, exhibits refined grains, dispersed Na 2 Te nanoprecipitates, and a high density of dislocations, leading to ultralow lattice thermal conductivity (≈0.50 W m −1 K −1 at 750 K) while preserving excellent electrical transport. A peak TE figure of merit zT ≈2.2 at 823 K and a high average zT ≈1.9 across 623–823 K are achieved. To validate the device-level applicability, single-leg TE modules are fabricated, achieving a high conversion efficiency of 13.4% at Δ T = 395 K, which is among the best reported for a PbTe-based system. Furthermore, a unicouple module integrated with n-type skutterudite reaches a record power density of 2.2 W cm −2 at Δ T = 375 K. This study highlights a scalable pathway for advancing mid-temperature TE materials and devices through structural and compositional engineering.

研究领域: 材料科学 · 热电学 · 固态化学 · 能量转换 · 纳米材料
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Nano Energy · 2024 · IF 16.8

Synergistic enhancement of thermoelectric performance of n-type PbTe by resonant level and single-atom-layer vacancies

Chenghao Zhang,Kangpeng Jin,Hongliang Dong,Wenlong Xu,Pengfei Xu,Zhenhua Yan,Weiyun Zhao,Biao Xu,Liangwei Fu

Modulating electrical and thermal transport through zero-dimensional point defects and one-dimensional dislocations are extensively investigated. However, the systematic study of exploring single-atom-layer vacancies for improving thermoelectric (TE) performance remains rare. In this study, we modulate the number density of single-atom-layer two-dimensional (2D) Te vacancies in lead telluride (PbTe) for the first time through bismuth and indium doping. DFT calculations reveal (Bi, In) co-doping lowers the formation energy of such defects, confirming the feasibility of this method. 2D Te vacancies simultaneously enhance phonon scattering and evoke bond softening, significantly lowering the lattice thermal conductivity . Meanwhile, indium doping generates resonant level in the energy band, which increases the carrier concentration without deteriorating the Seebeck coefficient drastically. As a result, a peak TE figure of merit ( zT ) of ∼1.6 and an average zT ( zT avg ) of 1.17 are achieved in the (Bi, In) co-doped PbTe. Furthermore, a high conversion efficiency of 6.5 % is obtained for the fabricated 2-pair module at a temperature difference of 500 K.

研究领域: 材料科学 · 热电学 · 凝聚态物理 · 缺陷工程 · 能量转换
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Small · 2024 ·Vol. 20 ·期 48 ·2406179 · IF 13

Vacancy Manipulation by Ordered Mesoporous Induced Optimal Carrier Concentration and Low Lattice Thermal Conductivity in BixSb2−xTe3 Yielding Superior Thermoelectric Performance

Jiao Li,Wenlong Xu,Kangpeng Jin,Wanjia Zhang,Xiaoqing Lu,Guilong Pan,Tianyu Zhong,Xiyang Wang,Zhan Shi,Biao Xu,Yue Lou

For Bi x Sb 2− x Te 3 (BST) in thermoelectric field, the element ratio is easily influenced by the chemical environment, deviating from the stoichiometric ratio and giving rise to various intrinsic defects. In P-type polycrystalline BST, Sb Te and Bi Te are the primary forms of defects. Defect engineering is a crucial strategy for optimizing the electrical transport performance of Bi 2 Te 3 -based materials, but achieving synchronous improvement of thermal performance is challenging. In this study, mesoporous SiO 2 is utilized to successfully mitigate the adverse impacts of vacancy defects, resulting in an enhancement of the electrical transport performance and a pronounced reduction in thermal conductivity. Crystal and the microstructure of the continuous modulation contribute to the effective phonon–electronic decoupling. Ultimately, the peak zT of Bi 0.4 Sb 1.6 Te 3 /0.8 wt% SiO 2 (with a pore size of 4 nm) nanocomposites reaches as high as 1.5 at 348 K, and a thermoelectric conversion efficiency of 6.6% is achieved at Δ T = 222.7 K. These results present exciting possibilities for the realization of defect regulation in porous materials and hold reference significance for other material systems.

研究领域: 材料科学 · 热电学 · 纳米技术 · 固体物理学
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PHYSICAL CHEMISTRY CHEMICAL PHYSICS · 2016 ·Vol. 18 ·期 46 ·31821-31827 · IF 4.449

Enhanced thermoelectric properties of SnSe polycrystals via texture control

Dan Feng,Zhen-Hua Ge,Di Wu,Yue-Xing Chen,Tingting Wu,Ju Li,Jiaqing He

We present in this manuscript that enhanced thermoelectric performance can be achieved in polycrystalline SnSe prepared by hydrothermal reaction and spark plasma sintering (SPS). X-ray diffraction (XRD) patterns revealed strong orientation along the [l 0 0] direction in bulk samples, which was further confirmed by microstructural observation through transmission electron microscopy (TEM) and field emission scanning electron microscopy (FESEM). It was noticed that the texturing degree of bulk samples could be controlled by sintering temperature during the SPS process. The best electrical transport properties were found in the sample which sintered at 450 °C in the direction vertical to the pressing direction, where the highest texturing degree and mass density were achieved. Coupled with the relatively low thermal conductivity, an average ZT of ∼ 0.38, the highest ever reported in pristine polycrystalline SnSe was obtained. This work set up a forceful example that a texture-control approach can be utilized to enhance the thermoelectric performance effectively.

研究领域: 材料科学 · 热电学
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ADVANCED FUNCTIONAL MATERIALS · 2024 ·Vol. 34 ·期 24 ·2313719 · IF 18.5

A New N-Type High Entropy Semiconductor AgBiPbSe2S with High Thermoelectric and Mechanical Properties

Yingchao Wei,Zheng Ma,Wang Li,Chengjun Li,Boyu Yang,Chengwei Sun,Shuangfu Gang,Wenguang Zhang,Hui Long,Xin Li,Qinghui Jiang,Dan Zhang,Yubo Luo,Junyou Yang

Exploring N-type High-entropy materials with both high thermoelectric and mechanical properties is highly desirable for all-high-entropy thermoelectric generators (TEGs) since the thermoelectric and mechanical properties of N-type one are largely behind its P-type counterparts. Herein, a new rock-salt structure N-type high entropy thermoelectric AgBiPbSe 2 S is introduced with a bandgap of ≈0.43 eV. The atomic radii difference of each component results in a large lattice distortion of 0.246, leading to a low thermal conductivity of 0.36 W m −1 K −1 at 823 K. The figure of merit ( ZT ) reaches 0.6 for AgBiPbSe 2 S at 823 K. Moreover, Ag 2 Se precipitates are included in AgBiPbSe 2 S to filter low energy carriers for high Seebeck coefficients and to scatter phonons with nanoscale wavelength for ultralow lattice thermal conductivities. Consequently, a peak ZT of ≈1.18 at 823 K and an average ZT of 0.60 at 400–823 K are obtained for Ag 1.02 BiPbSe 2 S. More importantly, high mechanical properties are also obtained in Ag 1.02 BiPbSe 2 S, of which the Vickers hardness and flexural strength are ≈209 Hv and 32 MPa, respectively, originating from the enhanced lattice friction by chemical short-range disorder (i.e., high entropy effect) and dispersion strengthening caused by Ag 2 Se nanoprecipitates.

研究领域: 热电材料 · 材料科学 · 高熵材料 · 半导体物理 · 材料力学性能
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