Laser & Photonics Reviews
·
2023
·Vol. 17
·期 12
·2300476
·
IF 11
Wenhai Sun,Xiang Zhang,Hulin Zhang,Zichen Ren,Mingjun Chen,Yingjun Xiao,Zitong Li,Jianbo Deng,Dukang Yan,Leipeng Zhang,Yao Li
The development of electrochromic devices (ECDs) that can dynamically modulate infrared (IR) emissivity while maintaining a wide color gamut distribution for visible (VIS)-IR compatible spectral manipulation has been a long-standing challenge. Current ECDs are limited by simultaneous changes in IR emissivity and VIS colors when subjected to external potential, restricting their potential applications. This work presents, for the first time, VIS–IR compatible ECDs capable of displaying VIS multicolor and dynamically modulating IR emissivity via a Ge/HfO 2 Fabry–Perot cavity structure. The all-solid-state VIS-IR compatible ECD with the structure of ITO/NiO/Ta 2 O 5 /Li/WO 3 /ITO/Ge/HfO 2 achieves not only emissivity modulation of 0.20 at potentials of −2.5 V and +2.5 V in the wavelength range of 2.5–25 µm, but also, due to the presence of Fabry–Perot cavity, the novelty compatible device structure achieves static multicolor modulation, thus decoupling VIS and IR emissivity modulation. Additionally, a flexible VIS-IR compatible ECD based on polyaniline is also constructed. This novel approach offers a promising possibility for multispectral compatible manipulation, VIS multicolor, and IR signal processing applications.
研究领域:
材料科学
·
光学工程
·
纳米光子学
·
功能材料
·
智能器件
·
表面物理
·
能源材料
✓ 已验证
DOI
高影响因子
Solar RRL
·
2021
·Vol. 6
·期 3
·2100554
·
IF 8.582
Daiyu Li,Pei Jiang,Wenhao Zhang,Jiankang Du,Chen Qiu,Jiale Liu,Yue Hu,Yaoguang Rong,Anyi Mei,Hongwei Han
Perovskite solar cells (PSCs) have achieved a certified power conversion efficiency (PCE) of 25.5% and show potential for low-cost photovoltaic applications. One key of pushing PSCs into industrialization is enlarging their areas. However, the PCE of larger-area PSCs is dramatically limited by the undesired increase in series resistance ( R S ), which leads to obvious loss of fill factor (FF). Herein, R S in fully printable mesoscopic PSCs is modulated with a carbon electrode by optimizing the device geometry, preparing busbars to collect currents from electrodes and improving the conductivity of the back electrode. A rectangular device shape and tin busbars on conductive substrate effectively reduce the R S . Meanwhile, an additional hot-pressed highly conductive low-temperature carbon layer on the back carbon electrode also reduces the R S . An enhanced PCE of 13.99% for 1 cm 2 PSCs by R S modulation is obtained, whereas the control device exhibits a PCE of 7.74%. The PCE increase is due to the improvement of FF from 0.372 to 0.638 with reduced R S from 27.13 to 9.66 Ω cm 2 .
研究领域:
材料科学
·
能源材料
·
光伏技术
·
纳米结构材料
·
电化学
·
器件物理
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2023
·Vol. 49
·期 23
·39700-39706
·
IF 5.2
Xinkun Liu,Ying Dai,Xinmei Pei,Wen Chen
Ferroelectric thin films with giant room-temperature electrocaloric effect (ECE) could be very useful in design of solid-state refrigeration devices. Here, lead-free Ba 0.85 Ca 0.15-x Sr x Zr 0.1 Ti 0.9 O 3 (BCZT-xSr, 0.01 ≤ x ≤ 0.10) thin films are successfully prepared on the substrates (Pt/Ti/SiO 2 /Si) via sol-gel route, and the effect of the Sr substitution on the structure, electric properties and ECE of the films were investigated. The dielectric analyses show that the rhombohedral-tetragonal phase transition temperature (T R-T ) move to a higher temperature and the tetragonal-cubic phase transition temperature (T m ) shift to a lower temperature with increasing Sr content, and finally the T R-T peaks merge into the T m peaks at room temperature. The BCZT-0.05Sr film presents a giant ECE with ΔT = 27.1 K and ΔS = 30.6 J K −1 kg −1 at 800 kV cm -1 near room temperature (301 K). The giant ΔT benefits from a multiphase coexisting region with successive R-T and T-C phase transition character near room temperature. These results indicate that the lead-free Sr-doped BCZT thin film is an attractive material for application in ECE refrigeration devices.
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
热电转换
·
固态制冷
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2024
·Vol. 35
·期 30
·1965
·
IF 2.8
Wei Lianghuan,Dong Tianhao,Cui Yongpeng,Zhu Shengjie,Si Jianxiao
One potential application for flexible thermoelectric (TE) devices based on inorganic ductile fiber materials is the development of self-powered wearable electronics. In the work, the molten drawing method was employed for fabricating inorganic ductile Ag 2 S 0.7 Te 0.3 fibers. The output voltage and maximum output power of the single fiber are 3.3 mV and 837.4 nW, respectively, under a temperature difference of 50 K. The Ag 2 S 0.7 Te 0.3 fiber shows outstanding stability performance in the service stability test with a critical electric density of 36 A cm −2 and exhibits a tensile strain of 5%. The high temperature sensitivity of the Ag 2 S 0.7 Te 0.3 fibers TE device demonstrates the application potential in wearable electronics products.
研究领域:
材料科学
·
纳米科技
·
能源材料
·
柔性电子学
·
热电转换
✓ 已验证
DOI
高影响因子
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
·
2016
·Vol. 213
·期 5
·1324-1328
·
IF 1.648
Yongzheng Zhang,Yuxiu Sun,Hao Wang,Hui Yan
Cu 2 ZnSnSe 4 (CZTSe) solar cell with a facile superstrate structure of carbon/CZTSe/CdS/ITO was fabricated entirely by non-vacuum processes. The influence of selenization temperature on the composition of CZTSe layer was briefly investigated. Compared with current superstrate-type CZTS(e) solar cells, the present CZTSe superstrate solar cell exhibited a higher power conversion efficiency of 2.44%.
研究领域:
材料科学
·
光伏技术
·
无机半导体
·
能源材料
·
薄膜器件
✓ 已验证
DOI
高影响因子
JOURNAL OF POWER SOURCES
·
2021
·
IF 9.127
Rui Xuan,Jinhui Li,Dongxu Huang,Tao Wang,Bo Zhang,Fangfang Niu,Guoping Zhang,Rong Sun,Ching-Ping Wong
With the continuous development of flexible electronic devices, the corresponding demands for electrochemical storage devices with flexibility and self-healing properties have been raised. However, the current supercapacitors still have great limitations in mechanical and self-healing performance. Herein, flexible and self-healing poly (2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA)/polyvinylimidazole (PVI)/LiCl polyelectrolyte is easily fabricated by a one-step copolymerization . The combined effect of electrostatic interaction and hydrogen bonding significantly enhances the mechanical and self-repairing ability of polyelectrolytes, showing excellent stretchability of 1137%, fracture stress of 154.57 kPa, and high healing efficiency of 91% at room temperature for 24 h. Besides, flexible electrode is prepared by adsorbing poly 3,4-ethylenedioxythiophene/polystyrene sulfonate on a polyurethane sponge. After assembly with a polyelectrolyte, the as-prepared supercapacitor proves excellent electrochemical performance. The area capacitance is 106 mF cm −2 at 50 mV s −1 and excellent cycle stability (97% capacity retention rate after 2000 cycles). In addition, the completely cut off supercapacitor can be successfully restored to 90% of the original capacitance, and still maintain a capacitance retention rate of up to 98% after 1000 cycles. This work provides a possible solution for designing low-cost intelligent and durable electrochemical storage device for smart clothing or electronic skin.
研究领域:
材料科学
·
高分子化学
·
电化学
·
柔性电子学
·
能源存储
✓ 已验证
DOI
高影响因子
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
·
2018
·Vol. 43
·期 7
·3741-3749
·
IF 4.229
Xingcheng Hu,Ravi Muchakayala,Shenhua Song,Jingwei Wang,Jianjun Chen,Manlin Tan
Polymeric ionic liquid-based gel electrolyte films are a new generation of electrolyte materials for flexible energy storage device applications. In this work, Li-ion conducting gel electrolyte films are prepared with the polymeric ionic liquid poly(diallydimethylammonium) bis(trifluoromethane sulfonyl)imide (poly(DADMATFSI)) as the host polymer and the lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) salt as the dopant . The crystalline nature, thermal stability, ionic conductivity and electrochemical stability window of the polymeric electrolyte films are analyzed by various characterization techniques. It is found that the polymeric electrolyte films exhibit high flexibility and excellent thermal stability. Their room-temperature electrical conductivity increases with increasing LiTFSI concentration and reaches a high value of 1.00 × 10 −3 S cm −1 at 20 wt% LiTFSI. The ionic transference numbers of the polymeric electrolyte films are in the range of 0.98–0.99, indicating that they are perfect ion conductors. Finally, the electrochemical stability window of the 20 wt% LiTFSI-doped polymeric electrolyte film is determined as approximately 6 V, which is a promising value for flexible energy storage device applications.
研究领域:
材料科学
·
电化学
·
高分子化学
·
能源存储
·
功能材料
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2019
·Vol. 8
·期 2
·789-796
·
IF 10.733
Yangyang Zhan,Zhibin Shao,Tianhao Jiang,Jing Ye,Xiaofeng Wu,Bingchang Zhang,Ke Ding,Di Wu,Jiansheng Jie
Two-dimensional (2D) vertical heterojunctions possess peculiar electronic and optoelectronic properties according to their complementary composition, ultrathin thickness, and unique geometry. However, it is still a challenge to synthesize 2D vertical heterojunctions based on non-layered materials due to strong covalent bonds and abundant surface dangling bonds. Here we developed a partial cation exchange method for the synthesis of 2D vertical Cu2S/CdS heterojunctions. Large-size and single-crystalline CdS nanosheets prepared by a van der Waals epitaxy method served as host lattices for cation exchange reactions. The evolution of the nanosheets in terms of their morphology, composition and crystal structure was elaborately characterized. The as-prepared 2D vertical heterojunctions have two-layer ultra-thin structures and form large-area junctions at their interfaces. Under light irradiation, the photogenerated electron–hole pairs can be quickly separated under the electric field in the junction region, minimizing the possibility of charge recombination. As a result, the device based on 2D vertical Cu2S/CdS heterojunctions exhibits a higher photoelectric conversion capability compared with the device based on single-component 2D CdS or Cu2S Schottky junctions. Our work opens up opportunities to explore 2D vertical heterojunctions based on non-layered materials for high-performance optoelectronic devices.
研究领域:
材料科学
·
纳米科技
·
半导体物理
·
光电子学
·
能源材料
✓ 已验证
DOI
高影响因子
RSC Advances
·
2015
·Vol. 5
·期 91
·74251-74255
·
IF 3.84
Juan-Ye Wang,Hong-Dan Peng,Jia-Mei Yang,Jing-Hui Yan,Ge-Bo Pan
We develop a facile approach for the one-step growth of ultralong and high-quality NiOEP nanowires in a large area, through a solvent-induced self-assembly method without using any structure directing agents. The size of the nanowires can be controlled by changing the composites of solvent mixtures. Being assembled in visible-light sensors, these nanowires exhibit a fast, reversible, and stable response. The highest Ion/Ioff ratio and photoresponsivity of photodiodes could reach 681 and 10.1 mA W−1, respectively, which could be attributed to the perfect single crystal quality, large surface to volume ratio, and fewer recombination barriers within the nanostructures. The facile fabrication and good photoresponse make NiOEP nanowires promising in optoelectronic applications.
研究领域:
材料科学
·
纳米科技
·
光电子学
·
物理化学
·
功能材料
✓ 已验证
DOI
高影响因子
CARBON
·
2023
·
IF 10.9
Lu Han,Dehui Wang,Mengdie Li,Yang Zhong,Kanghong Liao,Yingbo Shi,Wenjing Jie
As the development of neuromorphic computing , it is meaningful to explore the synaptic memristors based on organic materials owing to their advantages in low cost, good mechanical flexibility and strong biocompatibility. In this work, organic pentacene thin films have been deposited on different substrates by the thermal evaporation method. The prepared thin films on SiO 2 /Si substrates demonstrate the co-existence of digital and analog resistive switching (RS) behaviors as well as a series of synaptic plasticity. To characterize the flexibility of the organic thin films, lateral memristors have been fabricated on polyethylene terephthalate (PET) substrates and demonstrate comparable RS behaviors when the bending radius is decreased to 1.26 cm or after 1000 bending. Furthermore, vertical memristors with Pt/pentacene/indium tin oxide (ITO) structure have been constructed when the organic thin films are deposited on ITO/PET substrates, exhibiting bipolar RS behaviors with low SET voltage of 0.65 V. The vertical synaptic memristors can be used to simulate the “learning-forgetting” experience of human brain. More importantly, an artificial neural network (ANN) can be simulated based on the vertical synaptic memristors, demonstrating 93.8 % recognition accuracy for hand-written digit image. This study suggests potential applications of the organic pentacene thin films for neuromorphic computing.
研究领域:
材料科学
·
微电子学
·
生物电子学
·
纳米科技
·
神经工程
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2019
·Vol. 30
·期 18
·17440-17446
·
IF 2.195
Wang Tianxiong,Meng Xianquan
We try to synthesize In x Ga 1−x Sb nanowires on silicon (100) substrate using InSb and GaSb as source materials and we succeeded. Au film was used as catalysts. The experiment is simple and repeatable. The diameter of the grown nanowires is 60–200 nm and up to 10 microns in length. The grown nanowires have good crystallinity. Due to the doping of indium, we found that the XRD peaks of nanowires were shifted. We have fabricated fully nanostructured device using ultra-long Ag nanowires as electrodes for the I–V characteristic study, and found that the device has photoresponse characteristics and the I–V characteristic curve was asymmetric, we explain that it was due to the asymmetry of this fully nanostructured devices.
研究领域:
材料科学
·
纳米科技
·
半导体物理
·
固体电子学
·
晶体生长
✓ 已验证
DOI
高影响因子
Applied Materials Today
·
2024
·
IF 7.2
Lingyan Zheng,Zhen Liu,Shuwen Xin,Qi Chen,Jinbo Ming,Liren Wu,Jiaqi Xu,Peilong Xu,Kai Liu,Ramakrishna Seeram,Fengyun Wang
A pivotal characteristic of neuromorphic systems lies in their inherent capacity for self-adaptation, facilitating environmental adaptation through the attenuation of response to repetitive stimuli. Existing electrolyte-gated synaptic transistors face challenges in simulating these self-adaptive behaviors of the brain. In this work, flexible indium zinc tin oxide (IZTO) nanowires-based synaptic transistors exhibiting self-adaptive behavior were fabricated for the first time via a facile electrospinning technique. The prepared transistors can realize typical synaptic functions by continuously modulating the conductance, including excitatory/inhibitory postsynaptic current and short/long term potentiation. These properties are well maintained even under a bending radius of 12 mm. Additionally, the neuromorphic system based on IZTO nanowires-based transistors achieves a high recognition accuracy exceeding 90 % for hand-written digits recognition. The synaptic transistor exhibits obvious self-adaptive behavior and a low energy consumption with reduction of 8.2 %. Self-adaptive neuromorphic flexible transistors can not only enhance their resemblance to biological systems, but also advance the development of wearable devices and neuromorphic calculation.
研究领域:
材料科学
·
纳米科技
·
生物电子学
·
神经形态工程
·
柔性电子器件
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）