APL Materials
·
2022
·Vol. 10
·期 4
·
IF 6.635
Wang Mengrou,Xu Yubing,Wang Xin,Li Yuwei,Zhao Jingda,Pan Yuzhu,Chen Jing,Li Qing,Zhao Zhiwei,Wu Jun,Lei Wei
All-inorganic halide semiconductors with perovskite or perovskite-like structure have aroused a widespread concern recently for its environmental friendliness and stabilities while possessing excellent optoelectronic properties. Double perovskite Cs 2 AgBiBr 6 single crystal (SC) is one of the most representative materials in the latest research area. To further improve the device response range and decrease its dark current density effectively, functional layers based on the solution-processed epitaxial method are normally fabricated as heterojunctions. Herein, a novel idea of a broadband heterojunction MAPbI 3 (MA = CH 3 NH 3 )/Cs 2 AgBiBr 6 is proposed in this work to achieve this goal. A MAPbI 3 layer is fabricated on Cs 2 AgBiBr 6 SC substrates through immersing Cs 2 AgBiBr 6 SC into MAPbI 3 solution at a MAPbI 3 crystallization temperature. Ultimately, this heterojunction device expands the absorption limit from 618 to 838 nm, makes responsivity range redshift from 629 to 860 nm, and achieves a responsivity of 16.8 mA W −1 while the detectivity of 1.33 × 10 11 Jones under 622 nm 0.55 mW cm −2 illumination at −20 V bias, maintaining excellent optoelectronic properties.
研究领域:
材料科学
·
光电材料
·
半导体物理
✓ 已验证
DOI
高影响因子
CRYSTENGCOMM
·
2023
·Vol. 25
·期 44
·6162-6170
·
IF 3.1
Shuai Wen,Huan Liu,Lier Deng,Jijie Zhao,Yuxuan Du,Shengyong Wang,Fei Gao,Zhipeng Zhu,Fei Xie,Weiguo Liu
Broadband photodetectors capable of detecting light across a wide spectrum ranging from visible to short wave infrared (SWIR) wavelengths have significant relevance in various fields, including space technology and civil applications. HgTe quantum dots (QDs) have emerged as a promising candidate for the development of low-cost broadband photodetectors. In this study, a photodetector based on a layered structure of indium tin oxide (ITO)/HgTe QD film/gold (Au) was designed and fabricated using a layer-by-layer spin coating method. The fabricated photodetector exhibited a broadband response from 400 nm to 2000 nm, covering the visible and SWIR regions. Its broad spectral range makes it suitable for a wide range of applications. Additionally, the photodetector demonstrated a fast response time of approximately 300 μs, enabling rapid detection and data acquisition. These results highlight the potential of HgTe QDs as a promising material for the development of advanced broadband photodetectors with fast response times. The simplicity of the device structure, combined with the low-cost fabrication technique, makes it an attractive option for commercialization and integration into various optoelectronic systems.
研究领域:
光学工程
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材料科学
·
电子器件
✓ 已验证
DOI
高影响因子
Inorganic Chemistry Frontiers
·
2024
·Vol. 11
·期 23
·8547-8554
·
IF 6.1
Qianyi Chen,Zhenjie Lun,Dongdan Chen,Yongsheng Sun,Puxian Xiong,Siyun Li,Shanhui Xu,Zhongmin Yang
The development of extra-broadband visible emission phosphors is crucial to achieve next-generation illumination with better color experience. Herein, a defect engineering strategy mediated by the structural cationic substitution is proposed and experimentally demonstrated for specific ultra-broadband emission in a garnet phosphor. The induced oxygen vacancies and interstitial cation through lattice distortion break the periodic potential field of the crystal and provide electronic levels in the band gap. As a result, excited by blue-light-emitting diodes, the novel Y3Sc2Al3O12:B3+ shows an ultra-broad emission with a full width at half maximum (FWHM) of ∼170 nm. Compared to general defect-emitting phosphors, the unique Y3Sc2Al3O12:B3+ exhibits excellent thermal quenching resistance and superior internal quantum efficiency of up to 95%. These findings not only show great promise of Y3Sc2Al3O12:B3+ as an extra-broadband emitter but also provide a new design strategy to achieve a full-visible-spectrum phosphor in a single-component material for white-light applications.
研究领域:
材料科学
·
光电技术
·
光子学
✓ 已验证
DOI
高影响因子
Inorganic Chemistry Frontiers
·
2023
·Vol. 10
·期 23
·6869-6878
·
IF 7
Jinmiao Jiao,Conggang Li,Yuheng She,Ning Ye,Zhanggui Hu,Yicheng Wu
Nonlinear optical (NLO) materials currently attract significant interest and hold paramount importance in the optoelectronic field. Nevertheless, the fabrication of NLO crystals capable of transmitting ultraviolet to mid-infrared wavelengths remains a formidable challenge. Herein, we synthesized two novel NLO crystals, namely Cs3REGe3O9 (RE = Y, Gd), by employing a structural gene strategy that harmoniously merges flexible [YO6] and [GdO6] octahedra with rigid [GeO4] motifs. Remarkably, Cs3REGe3O9 (RE = Y, Gd) crystals exhibit substantial band gaps of 4.92 and 5.3 eV, respectively, while achieving the shortest reported ultraviolet cutoff edges at 210 and 215 nm among the boron-free germanate-based NLO materials. Importantly, these compounds also feature a remarkably broad infrared transparency range exceeding 6.8 μm. Furthermore, both compounds demonstrate a moderate second-harmonic-generation (SHG) response, comparable to that observed in KDP. Additionally, first-principles calculations unveil that the synergistic effect of the [REO6] octahedra and [GeO4] tetrahedra plays a pivotal role in governing the optical properties of Cs3REGe3O9 (RE = Y, Gd). These explored findings offer a novel avenue for leveraging the highly desired NLO materials in the region spanning from ultraviolet to mid-infrared wavelengths.
研究领域:
材料科学
·
光学工程
·
晶体化学
✓ 已验证
DOI
高影响因子
PARTICLE & PARTICLE SYSTEMS CHARACTERIZATION
·
2016
·Vol. 33
·期 9
·656-663
·
IF 4.367
Hualiang Lv,Haiqian Zhang,Guangbin Ji
In this study, a novel graphene/g-C 3 N 4 microwave absorber is developed to solve the electromagnetic wave interference problem. Graphene/g-C 3 N 4 composite is synthesized by loading g-C 3 N 4 nanosheets on graphene through a simple liquid-phase approach. High-performance electromagnetic absorption performance can be achieved. The optimal reflection loss value is up to −29.6 dB under a thin coating layer of 1.5 mm. At the same time, the corresponding absorption bandwidth of this composite can reach 5.2 GHz (12.8–18 GHz). Excellent electromagnetic absorption property may be attributed to the current attenuation theory which has been proven by replacing graphene with porous graphene or graphene oxide. The results reveal that free electron numbers and loading mass of g-C 3 N 4 on graphene play the key roles in the intensity of current attenuation and resistance value.
研究领域:
材料科学
·
电磁学
✓ 已验证
DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2024
·
IF 9.4
Yue Yu,Dan Cao,Lingang Yang,Haibiao Guan,Zehao Liu,Changlong Liu,Xiaoshuang Chen,Haibo Shu
Two-dimensional (2D) layered group-IV monochalcogenides with large surface-to-volume ratio and high surface activity make that their structural and optoelectronic properties are sensitive to air oxidation. Here, we report the utilization of oxidation-induced gradient doping to modulate electronic structures and optoelectronic properties of 2D group-IV monochalcogenides by using SnS nanoplates grown by physical vapor deposition as a model system. By a precise control of oxidation time and temperature, the structural transition from SnS to SnSO x could be driven by the layer-by-layer oxygen doping and intercalation. The resulting SnSO x with a graded narrowing bandgap exhibits the enhanced optical absorption and photocurrent, leading to the fabricated SnSO x photodetector with remarkable photoresponsivity and fast response speed (<64 μs) at a broadband spectrum range of 520–1550 nm. The peak responsivity (7294 A/W) and detectivity (9.54 × 10 9 Jones) of SnSO x device are at least two orders of magnitude larger than those of SnS photodetector. Moreover, its photodetection performance can be competed with state-of-the-art of 2D materials-based photodetectors. This work suggests that the air oxidation could be utilized as an efficient strategy to engineer the electronic and optical properties of SnS and other 2D group-IV monochalcogenides for the development of high-performance broadband photodetectors.
研究领域:
材料科学
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光电技术
·
纳米科技
✓ 已验证
DOI
高影响因子
CRYSTENGCOMM
·
2024
·Vol. 26
·期 45
·6486-6492
·
IF 2.6
Qi Wang,Wei Jiang,Peng-Yao Xuan,Ke Zhao,Xiu-Yue Fu,Xiao-Rui Zhang,Xiao-Wu Lei,Cheng-Yang Yue,Xiang-Wen Kong
Lead halide perovskites have multiple optoelectronic functions because of their intriguing photophysical properties. Unfortunately, their extensive application prospects are limited by their high toxicity and instability. For these reasons, it is significant to assemble novel lead-free halides with high-performance luminescence properties. Environment-friendly In3+-based halides are gaining increasing interest because of their high stabilities and photoluminescence quantum yields (PLQYs). In this research work, we synthesized a zero-dimensional (0D) hybrid indium chloride single crystal of [1-Me-Pipz]2[InCl6]Cl·H2O (1-Me-Pipz = protonated 1-methylpiperazine) that demonstrated strong self-trapped exciton (STE)-associated broadband yellow light emission with a sufficient PLQY of 51.58%. Moreover, [1-Me-Pipz]2[InCl6]Cl·H2O exhibits extremely excellent structural and spectral stability in a variety of harsh environments. Importantly, the outstanding optoelectronic characteristics allow indium perovskite to be used for the successful fabrication of white light-emitting diodes (WLEDs) with a high color rendering index of 86.4. This work enriches the literature on indium halide perovskites and provides a novel viewpoint for the possible applications of 0D In3+ perovskite-based luminescent materials.
研究领域:
材料科学
·
光电子学
·
无机化学
·
纳米科技
·
固体物理
✓ 已验证
DOI
高影响因子
Inorganic Chemistry Frontiers
·
2024
·Vol. 11
·期 13
·3941-3949
·
IF 6.1
Guocheng Pan,Yaowu Wang,Jianfeng Wang,Zhenping Wu,Yiheng Yue,Nan Lin,Shiqing Xu,Gongxun Bai
Near-infrared (NIR) phosphor-converted light emitting diodes (pc-LEDs) highly demand broadband NIR phosphors for applications in food safety and smart detection. However, the lack of tunable NIR luminescent materials limits their development. Herein, we constructed a series of NIR Cr3+ doped Ga2O3-based materials with broadband, tunable, efficient emissions by utilizing [Zn2+–Ge4+] and [Ga3+–Ga3+] co-unit substitution. The obtained results show that the emission peak of NIR phosphors can be modulated from 713 to 765 nm. Meanwhile, the excitation peak remains in the blue light region. NIR phosphor-converted devices were prepared with 450 nm LED chips, which were studied using NIR imaging, penetration imaging, anti-counterfeiting, and pupil recognition technologies. Interestingly, NIR mechanoluminescence (ML) was realized based on the developed phosphors, which were successfully applied for non-destructive measurements of solids and in vivo bioimaging. Our study proposes a series of tunable and broadband luminescent materials and devices for NIR applications.
研究领域:
材料科学
·
光学工程
·
生物医学工程
·
传感器技术
·
固体物理
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2024
·Vol. 13
·期 1
·2401957
·
IF 8
Xin Xie,Wanyin Ge,Qian Zhang,Ye Tian,Zili Luo,Shifan Shang,Jianke Liu,Wenbin Cao
Cr 3+ -doped near-infrared (NIR) phosphors have attracted significant attention in recent years. Despite this, achieving high-performance NIR phosphors with broadband emission and excellent thermal stability remains a considerable challenge. This study presents Lu 3 Ga 5 O 12 :Cr 3+ , which demonstrates a tunable emission peak ranging from 705 to 759 nm and an increased full-width at half-peak maximum (FWHM) from 46 to 139 nm by substituting the [Mg 2+ -Ge 4+ ] chemical unit for the [Ga 3+ -Ga 3+ ] unit. Additionally, in Lu 3 MgGa 3 GeO 12 :Cr 3+ , Yb 3+ , an energy transfer channel (Cr 3+ -Yb 3+ ) is constructed. Under blue light excitation, the characteristic emission peaks of Cr 3+ (600–900 nm) and Yb 3+ (900–1100 nm) are observed simultaneously. However, the emission band between 850 and 900 nm is relatively weak, resulting in a discontinuous emission spectrum. To address this, Lu 3 MgGa 3 GeO 12 :Cr 3+ , Yb 3+ , Nd 3+ phosphors are proposed, which exhibit a continuous broadband NIR emission with a FWHM of 253 nm and internal quantum efficiency of 47.3%. The luminescence intensity retains 81% of its room temperature value even at 423 K. Combining this new phosphor with a blue LED chip results in a portable NIR light source with potential applications in non-destructive detection, information encryption, bio-imaging, and NIR remote control. This work offers a novel perspective for developing high-performance NIR phosphors.
研究领域:
材料科学
·
光学工程
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2024
·Vol. 12
·期 13
·4825-4834
·
IF 5.7
Huijie Wu,Sisi Liang,Weixiong You,Le Liu,Yongwei Guo,Shujian Wang,Liping Song,Zihao Wang,Haomiao Zhu
Near-infrared (NIR) phosphors with emission peak wavelength longer than 800 nm have attracted significant attention due to their wide applications. However, a key challenge lies in developing high photoluminescence (PL) thermal stability phosphors. Herein, we synthesized a NIR phosphor Na3Al2(PO4)2F3:Cr3+ (NAPOF:Cr3+) through the solid-state reaction method. The NAPOF:Cr3+ phosphor exhibits an intense broadband emission peak at 810 nm and covers a wide spectral range from 650 to 1100 nm. Notably, this phosphor demonstrates zero PL thermal quenching even at 398 K. This outstanding thermal stability can be primarily ascribed to the inherent structural rigidity and wide bandgap of the NAPOF crystal together with the medium electron–photon coupling effect. The fabricated broadband NIR light-emitting diodes (LEDs) using the NAPOF:Cr3+ phosphor exhibits a highest NIR light output power of 28.1 mW under a drive current of 150 mA, and a corresponding electro-optical conversion efficiency of 8.6%. Our findings highlight the tremendous potential of the NAPOF:Cr3+ phosphor for broad-spectrum NIR-LED applications.
研究领域:
材料科学
·
光学
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2017
·Vol. 6
·期 4
·1701166
·
IF 6.875
Yanqi Ge,Zhengfeng Zhu,Yanhua Xu,Yunxiang Chen,Si Chen,Zhiming Liang,Yufeng Song,Yousheng Zou,Haibo Zeng,Shixiang Xu,Han Zhang,Dianyuan Fan
2D titanium disulfide (TiS 2 ) is recently found to have strong light absorption properties from visible to infrared (IR) region. This feature is highly attractive for applications in nonlinear photonics; however, the mechanism of broadband light–matter interaction is yet to be determined and nonlinear photonic devices are not developed. Here, for the first time, the experimental evidence supporting the mechanism of the broadband nonlinear photoresponse in ultrathin TiS 2 nanosheets ranging from 400 nm to 1390 nm is reported through laser Z -scan measurements. High-performance nonlinear photonic devices operating in the telecommunication band are also demonstrated. A novel saturable absorber (SA) device is successfully fabricated based on a 2D TiS 2 -decorated fiber, which exhibits outstanding ultrashort pulse generation performance with pulse duration of ≈1.04 ps centered at 1569.5 nm. Furthermore, as a stable all-optical thresholding component, the device can effectively attenuate noise and boost the signal-to-noise ratio of the pulse from 1.90 to 10.68 dB. The findings indicate that TiS 2 -based SA devices can be developed into excellent highly nonlinear photonic devices, which may advance the development of TiS 2 -based optical communication technologies in the future.
研究领域:
光学
·
材料科学
·
光子学
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Yongqi Zhu,Yifan Yang,Shuang Wu,Yiwen Zhu,Xinyue Li,Qinan Mao,Yifan Chen,Rui Shi,Jiasong Zhong,Jing Wang
Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are considered promising light sources for night vision, food analysis, biomedicine, and plant growth. Yet, the application potential of this technology is vulnerable to the function degradation of the phosphors used, such as thermal quenching, which needs to be addressed urgently. Herein, the NIR phosphors K2LiMF6:Cr3+ (M = Al, Ga, In) with a cubic double-perovskite structure synthesized by a green hydrofluoric acid-free hydrothermal method exhibit outstanding thermal stability. Under 450 nm excitation, the as-synthesized K2LiMF6:Cr3+ phosphors all exhibited broadband NIR emission covering 650–1000 nm peaking at 755–780 nm. The prepared K2LiAlF6:Cr3+ phosphor shows a unique zero-thermal quenching performance (I423 K/I298 K = 102%). The comprehensive effects of a wide band gap, large thermal energy barrier, weak electron–phonon coupling effect, and high structural rigidity are responsible for the suppression of thermal quenching in this material. The output power of the NIR pc-LED device reached 285 mW at 100 mA. This series of phosphors has promise in night vision and bioimaging applications.
研究领域:
材料科学
·
光学
·
生物医学工程
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）