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CHINESE CHEMICAL LETTERS · 2024 ·Vol. 36 ·期 4 ·109730 · IF 9.4

Trithionic guanidine: A novel semi-organic short-wave ultraviolet nonlinear optical sulfate with dimeric heteroleptic tetrahedra

Hongyuan Sha,Dongling Yang,Yanran Shang,Zujian Wang,Rongbing Su,Chao He,Xiaoming Yang,Xifa Long

Sulfates are always promising short-wave ultraviolet (UV) nonlinear optical (NLO) candidates, if their birefringence could be greatly improved. Here, in terms of the insufficient birefringence , the unity of heteroleptic tetrahedral groups and triangular ones was proposed and implemented. Thus, a new semi-organic crystal, [C(NH 2 ) 3 ]S 3 O 6 (G 2 S 3 O 6 ), was obtained, which is composed of [S 3 O 6 ] 2− and [C(NH 2 ) 3 ] + groups. It exhibits excellent optical properties with a short absorption cutoff edge of 218 nm, a strong NLO response of 1.4 × KH 2 PO 4 , and more especially, a large birefringence of 0.097@546 nm. This birefringence leap makes the G 2 S 3 O 6 crystal achieve a phase-matching behavior under a 532 nm laser. Thus, the synergy of [S 3 O 6 ] 2− and [C(NH 2 ) 3 ] + groups results in excellent optical performances. This finding opens a new horizon for exploring novel UV NLO crystals.

研究领域: 材料科学 · 光学工程 · 无机化学 · 晶体化学 · 非线性光学
✓ 已验证 DOI 高影响因子
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Physica Status Solidi-Rapid Research Letters · 2020 ·Vol. 14 ·期 4 ·1900723 · IF 2.291

Nanowire Junction Induced High Threshold Voltage in Poly(3-hexylthiophene) Mesoscale Crystalline Thin-Film Transistors with Significantly Enhanced Mobility

Yadan Deng,Jingzan Jiang,Jun Sun,Yufeng Hu,Qiuhong Cui,Zhenbo Deng,Zhidong Lou,Yanbing Hou,Feng Teng

Fabrication of nanowires in polymer films can dramatically enhance the mobility of thin-film transistors (TFTs). Unlike the popular method of forming nanowires after spin-coating films, here a water-bath method to fabricate the micrometer-long nanowires in the poly(3-hexylthiophene) (P3HT) solution is introduced, which is suitable for large-area printing electronic application. The resulting transistor exhibits significantly enhanced mobility and excellent device stability. However, the threshold voltage of the device is increased, compared with the amorphous film device. The underlying mechanism of the mesoscale crystalline induced threshold voltage increase has been rarely studied. The temperature-dependent characteristics imply that the activation energy of the device with nanowires is higher than that of the amorphous one, indicating nanowires can introduce deep traps. This suggests that the charge transport is mainly limited by the deep traps at the junctions between the nanowires considering the trap density inside the nanowires is significantly low. The deep traps introduced by the junctions can increase the threshold voltage as the device needs higher voltage to fill these traps in the channel before the device is turned on. This explains why the devices with nanowires have an increased threshold voltage while their mobilities are dramatically enhanced.

研究领域: 材料科学 · 凝聚态物理 · 有机电子学 · 薄膜晶体管 · 半导体器件物理
✓ 已验证 DOI 高影响因子
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INORGANIC CHEMISTRY · 2018 · IF 4.7

Thermoelectric Material SnPb2Bi2S6: The 4,4L Member of Lillianite Homologous Series with Low Lattice Thermal Conductivity

Jingpeng Li,Yiming Zhou,Shiqiang Hao,Tianyan Zhang,Chris Wolverton,Jing Zhao,Li-Dong Zhao

Although the binary sulfides Bi2S3, PbS, and SnS have attracted extensive interest as thermoelectric materials, no quaternary sulfides containing Sn/Pb/Bi/S elements have been reported. Herein, we report the synthesis of a new quaternary sulfide, SnPb2Bi2S6, which crystallizes in the orthorhombic space group Pnma with unit cell parameters of a = 20.5458(12) Å, b = 4.0925(4) Å, c = 13.3219(10) Å. SnPb2Bi2S6 has a lillianite-type crystal structure consisting of two alternately aligned NaCl-type structural motifs separated by a mirror plane of PbS7 monocapped trigonal prisms. In the lillianite homologous series, SnPb2Bi2S6 can be classified as 4,4L, where the superscripted numbers indicate the maximum numbers of edge-sharing octahedra in the two adjacent NaCl-shaped slabs along the diagonal direction. The obtained SnPb2Bi2S6 phase exhibited good thermal stability up to 1000 K and n-type degenerate semiconducting behavior, with a power factor of 3.7 μW cm–1 K–2 at 773 K. Notably, this compound exhibited a very low lattice thermal conductivity of 0.69–0.92 W m–1 K–1 at 300–1000 K. Theoretical calculations revealed that the low thermal conductivity is caused by the complex crystal structure and the related elastic properties of a low Debye temperature, low phonon velocity, and large Grüneisen parameters. A reasonable figure of merit (ZT) of ∼0.3 was obtained at 770 K.

研究领域: 材料科学 · 物理学
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JOURNAL OF RARE EARTHS · 2021 ·Vol. 40 ·期 11 ·1691-1698 · IF 3.712

Site occupation and energy transfer in full color emitting phosphor Ba2Ca(BO3)2:Ce3+(K+),Eu2+,Mn2+

Qingsong Hu,Zaifa Pan,Guijie Liang

White light-emitting diodes (WLEDs) fabricated by single-phase full color emitting phosphor are an emerging solution for health lighting. The crystallographic site occupation of activators in a proper host lattice is crucial for sophisticated design of such phosphor. Here, we report a high quality white light-emitting phosphor Ba 2 Ca(BO 3 ) 2 :Ce 3+ (K + ),Eu 2+ ,Mn 2+ with spectral distribution covering whole visible region. Blue light emission originates from Ce 3+ ions occupying preferentially Ba 2+ site by controlling synthesis conditions. Green and red lights are obtained from Eu 2+ occupying Ba 2+ (and Ca 2+ ) site and Mn 2+ occupying Ca 2+ site, respectively. In this triple-doped phosphor, strong red emission with a low concentration of Mn 2+ is realized by the efficient energy transfer from Ce 3+ and Eu 2+ to Mn 2+ . Furthermore, high quality white light is accomplished by properly tuning the relative doping amount of Ce 3+ (K + )/Eu 2+ /Mn 2+ based on efficient simultaneous energy transfer. The results indicate that Ba 2 Ca(BO 3 ) 2 :Ce 3+ (K + ),Eu 2+ ,Mn 2+ is a promising white light-emitting phosphor in WLEDs application.

研究领域: 材料科学 · 无机化学 · 发光材料 · 固态照明 · 能源材料
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MATERIALS CHEMISTRY AND PHYSICS · 2013 · IF 2.072

Synthesis of magnetite submicrospheres with tunable size and superparamagnetism by a facile polyol process

Jun Liang,Huiru Ma,Wei Luo,Shouling Wang

Magnetite submicrospheres with an average size range of 90–490 nm were obtained by a facile polyol process. The effects of reaction conditions on the morphology and static magnetism of magnetite submicrospheres were studied when the reaction time, the concentration of component, and the types of the solvent or surfactant changed. The average size of primary crystals was controlled by changing the concentration of surfactant thus the superparamagnetism was obtained, meanwhile the average size of secondary clusters was tuned by changing the concentration of ferrous precursor FeCl 3 ·6H 2 O. The ratio of ethylene glycol and diethylene glycol , the concentration of NaAC, and the reaction time all exhibited novel effects on the morphology of magnetite submicrospheres facilitating our understanding about the synthesis mechanism. The synthesized magnetite submicrospheres were successfully used for photonic crystal .

研究领域: 材料科学 · 纳米技术 · 磁性材料 · 生物医学工程
✓ 已验证 DOI 高影响因子
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MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING · 2023 · IF 4.1

A novel co-substitution strategy to enhance the luminescence performance of Zn2TiO4:Cr3+ phosphor

Kang Cheng,Xinyue Liu,Weichao Huang,Xinyong Gong,Chaoyong Deng

Cr 3+ is an ideal activator for near-infrared phosphor. Cr 3+ ions have an electronic structure in which the outermost shell is not fully filled, which makes the emission of Cr 3+ susceptible to the crystal field environment and the change of local structural. Therefore, when Zn 2+ -Ti 4+ ion pairs are replaced with Al 3+ -Al 3+ /Ga 3+ -Ga 3+ ion pairs , changes in the crystal structure and the crystal field are strengthened, which improves the luminescence performances of Zn 2 TiO 4 :Cr 3+ phosphors. The thermal stability and the intensity of the luminescence can be clearly seen to have increased.

研究领域: 材料科学 · 无机化学 · 发光材料 · 固体物理 · 功能材料
✓ 已验证 DOI 高影响因子
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MATERIALS LETTERS · 2014 · IF 2.269

Colloidal synthesis of chalcostibite copper antimony sulfide nanocrystals

Yu Zou,Jiang Jiang

We report the colloidal synthesis of monodisperse phase pure chalcostibite CuSbS 2 nanocrystals in high boiling point solvent. The use of dodecanethiol as ligands had an advantage over oleylamine on avoiding the hydrolysis of Sb precursor. The effect of reaction temperature and Cu/Sb feed molar ratio on the synthesis of copper antimony sulfide nanocrystals in dodecanethiol system was investigated. As a result of the reactivity difference between Cu and Sb precursors, the formation of CuSbS 2 nanocrystals involves the preferential nucleation of Cu-rich nanocrystals and their subsequent reaction with remaining Sb precursors. The band gap of the resulting CuSbS 2 nanocrystals was measured to be ~1.59   eV.

研究领域: 材料化学 · 纳米科学 · 无机化学 · 半导体材料 · 胶体化学
✓ 已验证 DOI 高影响因子
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Advanced Electronic Materials · 2022 ·Vol. 8 ·期 7 ·2101383 · IF 7.633

Realizing Ferromagnetism in a Field-Effect Transistor Based on VSe2 Thin Flakes

Changsheng Zhu,Bin Lei,Fanbao Meng,Jianhua Cui,Weizhuang Zhuo,Wenxiang Wang,Ziji Xiang,Xianhui Chen

Ferromagnetic order in 2D2D materials has triggered widespread interest because of their applications in spintronic devices. Monolayer 1T-VSe 2 , as a recently emerged candidate of 2D2D ferromagnetic material, exhibits complicated behaviors that contradict the theoretical predictions. In this work, a systematic investigation is presented on the evolution of the transport properties in VSe 2 thin flakes controlled by gate voltage. Notably, for the first time, a paramagnetic-to-ferromagnetic transition is realized in a VSe 2 thin flake using a field-effect transistor setup with solid ion conductor of polycrystalline Li 1+ x + y Al x (Ti 2− y Ge y )P 3− z Si z O 12 serving as the gate dielectric. The Curie temperature determined from the electrical transport measurements is ≈40 K. The electric-field-controlled ferromagnetism in exfoliated VSe 2 flakes provides an excellent platform for developing advanced spintronics as well as investigating unusual emergent physics in 2D systems.

研究领域: 凝聚态物理 · 材料科学 · 纳米电子学 · 自旋电子学 · 低维系统
✓ 已验证 DOI 高影响因子
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POLYMERS FOR ADVANCED TECHNOLOGIES · 2024 ·Vol. 35 ·期 5 ·e6421 · IF 3.1

Effects of heat treatments and cross-linking on the crystal structure and torsional properties of polyester fibers

Ya-Jing Cao,Xue-Jie Gai,Wei Li,Hai-Hui Liu,Na Han,Xing-Xiang Zhang

Artificial muscles have attracted great attention as actuators and coiled and twisted monofilament actuators are considered the most promising ones. In the present work, the torsional properties of poly(hexamethylene adipamide) (PA66), poly(ethylene terephthalate) (PET), and high-strength PET (HTPET) monofilaments were investigated. Furthermore, cross-linked PET (CPET) monofilaments were melt-spun by adding 1 wt% of 2-dimethoxy-2-phenylacetophenone (ultraviolet (UV) initiator) and triallyl iso-cyanurate (cross-linking agent) in PET chips under UV radiation. The HTPET monofilaments had the highest torsional modulus of 1.1 GPa followed by the PET (0.8 GPa) and PA66 (0.6 GPa) monofilaments. Subsequently, the HTPET monofilaments were subjected to heat treatments under tension. When the heat treatment time was 10 min, the mechanical properties of the HTPET monofilaments also tended to first increase and then decrease with the rise of heat treatment temperature. The molecular arrangement and crystal structure of the HTPET monofilaments were gradually improved with the prolongation of tension heat treatment. The tensile strength and initial modulus of the HTPET monofilaments were 871.4 MPa and 15.8 GPa, respectively. The mechanical properties of the CPET monofilaments first increased and then decreased with the increase of the drawing ratio. When the drawing ratio was 10, the CPET monofilament had a tensile strength of 717.2 MPa, an initial modulus of 16.7 GPa, and a maximum torsional modulus of 1.3 GPa. Therefore, both heat treatment and cross-linking increased the mechanical strength of the PET monofilaments. CPET and HTPET are possible to be used as artificial muscles.

研究领域: 材料科学 · 高分子物理 · 纺织工程 · 生物医学工程 · 智能材料
✓ 已验证 DOI 高影响因子
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CERAMICS INTERNATIONAL · 2024 ·Vol. 50 ·期 14 ·25541-25547 · IF 5.1

Synthesis, negative thermal expansion and optical performances of In0.5Sc1.5Mo3O12 thin films via sol-gel spin coating

Hang Zhang,Ahsan Nawaz,Feiyu Huang,Zhiping Zhang,Hongfei Liu

Orthorhombic In 0.5 Sc 1.5 Mo 3 O 12 thin films have been synthesized using the sol-gel spin coating . Influences of post-annealing temperatures on crystal structure, morphology, negative thermal expansion (NTE) and optical performances of the thin films were studied using XRD , SEM, XPS, high-temperature XRD and UV–Vis–NIR spectrophotometer. XRD and SEM results show that as-prepared thin film is in an amorphous state with a smooth and dense surface. Orthorhombic In 0.5 Sc 1.5 Mo 3 O 12 thin films were obtained after post-annealing in 550–750 °C. The higher the annealing temperature in 550–750 °C, the better the crystallinity of orthorhombic In 0.5 Sc 1.5 Mo 3 O 12 thin films . In addition, the grain size of the In 0.5 Sc 1.5 Mo 3 O 12 thin film also grows as the annealing temperature increases. The resulting orthorhombic In 0.5 Sc 1.5 Mo 3 O 12 thin films exhibit anisotropic NTE. Its volumetric coefficient of thermal expansion (CTE) is −3.44 × 10 −6  °C −1 , while the CTEs in a -, b - and c -axis directions are −4.70 × 10 −6  °C −1 , 5.37 × 10 −6  °C −1 , and -4.10 × 10 −6  °C −1 in 25–700 °C, respectively. In addition, the transmittance of orthorhombic In 0.5 Sc 1.5 Mo 3 O 12 thin films post-annealed at 750 °C is around 87.75 %–95.03 %.

研究领域: 材料科学 · 无机非金属材料 · 功能薄膜 · 热膨胀调控 · 光学材料
✓ 已验证 DOI 高影响因子
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CHEMICAL ENGINEERING JOURNAL · 2020 · IF 10.652

Red shift properties, crystal field theory and nephelauxetic effect on Mn4+-doped SrMgAl10-yGayO17 red phosphor for plant growth LED light

Simin Gu,Mao Xia,Cheng Zhou,Zihui Kong,Maxim S. Molokeev,Li Liu,Wai-Yeung Wong,Zhi Zhou

The discovery of novel Mn 4+ -doped oxide red phosphor with suitable spectrum for plant growth is a hot issue in the recent years due to the characteristic red photoluminescence of 2 E g  →  4 A 2 transition in Mn 4+ ions. Generally, the emission position of Mn 4+ is hard to tune because of specific crystal field in most phosphors. In this work, tunable luminescence property with obvious red shift in the spectra is observed in the Mn 4+ -doped SrMgAl 10-y Ga y O 17 red phosphor via simple substitution of Ga 3+ for Al 3+ , and crystal field theory and nephelauxetic effect are employed to explain this phenomenon. Meanwhile, the Ga 3+ dopant changes the shape of the spectra because Ga 3+ dopant guides the replacement site of Mn 4+ and changes the luminescence center. Improved emission intensity is obtained because appropriate Ga 3+ doping leads to larger band gap and reduces non-radiative transitions. Phosphor-converted LED (pc-LED) devices fabricated with blue chip (470 nm) and the as-obtained SrMgAl 10-y Ga y O 17 :1.0%Mn 4+ phosphors emit bright blue and red light, which fit the absorption regions of plant pigments well, thus SrMgAl 10-y Ga y O 17 :Mn 4+ phosphor can be a candidate for plant growth LED light.

研究领域: 材料科学 · 光电子学 · 固体化学 · 农业光生物学 · 发光材料
✓ 已验证 DOI 高影响因子
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OPTICAL MATERIALS · 2020 · IF 2.779

Influence of extra trace Mn-doping on the properties of Cu2ZnSn(S,Se)4 absorber layer

Guonan Cui,Yanchun Yang,Ruilan Chen,Chengjun Zhu

Cations substitutions are known to make much significant contribution on achieving the high-quality kesterite Cu 2 ZnSn(S,Se) 4 thin films . And the optimal ratios of Mn, Ni and Co substitutions are reported to be ~0.05, belong to the low doping to reduce their defect density , which looks like to some extent the effect of Na doping. In this study, learning the research experience of alkali metal doping, we introduced the extra trace Mn 2+ ion into the precursor solution without affecting the compositions of other elements (i.e. Cu, Zn, and Sn), and the effect of trace addition on properties of the absorber layer was also studied. It was discovered that crystalline, electrical properties, and hole carrier concentration of Cu 2 ZnSn(S,Se) 4 thin films increased with an increase of Mn incorporation, and the best doping ratio of Mn/(Cu + Zn + Sn) was considered to be 0.03. In addition, the effect of extra trace Mn-doping on the film thickness and elemental compositions of Cu 2 ZnSn(S,Se) 4 absorber layer were studied in detail.

研究领域: 材料科学 · 半导体物理 · 薄膜制备 · 光伏材料 · 固体化学
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