Advanced Electronic Materials
·
2021
·Vol. 8
·期 4
·2101125
·
IF 7.295
Qi-Qi Wang,Fan Li,Sheng-Qing Xia,Jian Liu,Xiao-Cun Liu,Ling Chen,Cheng-Qian Zhang
The single crystal growth of Mg 3 Bi 2 -based thermoelectric materials is of great significance for their applications near room temperature. So far, it is still a big challenge to grow such bulk single crystals and attempts are primarily focused on the metal flux methods. For the first time, bulk single crystals of n-type Mg 3 Bi 1.49 Sb 0.5 Te 0.01 are directly grown by applying an In-situ Loading Bridgman method. The as-grown single crystal features an excellent carrier mobility of 220 cm 2 V −1 s −1 , which is among the best compared to other Mg 3 Bi 2 -based bulk materials. Besides, this method is successfully developed to fast grow uniform polycrystalline materials with high thermoelectric and mechanic performance. As demonstrated by the single-leg device, a large temperature difference of 10.5 K is achieved at the supplied electric current of 0.6 A, much superior to other room temperature state-of-the-art thermoelectric materials. With the single crystalline and polycrystalline materials prepared reliably and conveniently, in-depth investigations on the Mg 3 Bi 2 thermoelectric system can be greatly benefited, which should as well significantly facilitate their practical applications at room temperature.
研究领域:
材料科学
·
热电学
·
凝聚态物理
·
晶体生长
·
功能材料
·
能源材料
✓ 已验证
DOI
高影响因子
MATERIALS CHEMISTRY AND PHYSICS
·
2016
·
IF 2.101
Yuyang Li,Guanghua Liu,Jiangtao Li,Kexin Chen,Gang He,Zengchao Yang,Yemao Han,Min Zhou,Laifeng Li
Bulk In-doped Cu 2 SnSe 3 samples were prepared by a fast and one-step method of high-gravity combustion synthesis . All the synthesized samples were dense with relative densities of >98%. The influence of Indium-doping on the phase composition of the samples was investigated. SEM and EDS measurements confirm the existence of SnSe and Cu 2 Se as secondary phase in the Cu 2 Sn 1−x In x Se 3 samples. In addition, the experimental results show that there is a solubility limit of indium in the Cu 2 SnSe 3 matrix. The thermoelectric properties of the samples were measured in a temperature range from 323 K to 773 K, and the Cu 2 Sn 0.8 In 0.2 Se 3 sample achieved a maximum ZT of 0.65 at 773 K, which was comparable with the best-reported result for Cu 2 SnSe 3 materials prepared by conventional sintering approaches. With much reduced time and energy consumption, high-gravity combustion synthesis may offer a more efficient and economical way for producing thermoelectric materials .
研究领域:
材料科学
·
无机非金属材料
·
热电转换
·
固态化学
·
功能材料
✓ 已验证
DOI
高影响因子
SCRIPTA MATERIALIA
·
2019
·
IF 4.539
Jun Guo,Peng Qin,Zheng Ma,Qiong-Lian Yang,Jing Feng,Zhen-Hua Ge
A new approach was developed for enhancing the thermoelectric performance of In 2 O 3 (ZnO) 5 ceramics. Ni coating layer on the surface of In 2 O 3 (ZnO) 5 powders was prepared by chemical plating. The Ni-Coated In 2 O 3 (ZnO) 5 powders was densified to composite bulk with Ni enrichment in the grain boundaries. The composite sample obtained a remarkably enhanced dimensionless thermoelectric figure of merit (ZT) of 0.39 at 973 K, which is 3.6 times higher than that of a pristine In 2 O 3 (ZnO) 5 sample.
研究领域:
材料科学
·
凝聚态物理
·
功能陶瓷
·
热电材料
·
纳米复合材料
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2019
·
IF 4.175
Siqi Wang,Zhi Yang,Yuejun Sun,Yu Xiao,Li-Dong Zhao
PbTe-based thermoelectric materials are considered to be a medium-temperature thermoelectric candidates and the high-performance n -type PbTe is urgently to be developed to match its p -type counterpart on account of practical application. Herein, we firstly optimized the carrier density of n -type PbTe through Sb doping, and obtained a maximum ZT value of ∼1.0. Then, based on the optimized carrier density, we introduced ternary compounds AgSb(Se, Te) 2 to suppress the lattice thermal conductivity . Minimum lattice thermal conductivity of n -type PbTe was reduced as low as ∼0.53 W m −1 K −1 and ∼0.62 Wm −1 K −1 through introducing AgSbSe 2 and AgSbTe 2 , respectively. Combining the maintained electrical properties with suppressed thermal conductivity , maximum ZT values ∼1.2 and ∼1.3 were obtained in PbTe+2%AgSbSe 2 and PbTe+2%AgSbTe 2 , respectively. This work provides an effective strategy of synergistically balancing charge and phonon transports in n -type PbTe with ternary AgSb(Se, Te) 2 compounds.
研究领域:
材料科学
·
热电转换
·
凝聚态物理
·
半导体物理
·
功能材料
·
能量转换材料
✓ 已验证
DOI
高影响因子
INORGANIC CHEMISTRY
·
2018
·
IF 4.7
Jingpeng Li,Yiming Zhou,Shiqiang Hao,Tianyan Zhang,Chris Wolverton,Jing Zhao,Li-Dong Zhao
Although the binary sulfides Bi2S3, PbS, and SnS have attracted extensive interest as thermoelectric materials, no quaternary sulfides containing Sn/Pb/Bi/S elements have been reported. Herein, we report the synthesis of a new quaternary sulfide, SnPb2Bi2S6, which crystallizes in the orthorhombic space group Pnma with unit cell parameters of a = 20.5458(12) Å, b = 4.0925(4) Å, c = 13.3219(10) Å. SnPb2Bi2S6 has a lillianite-type crystal structure consisting of two alternately aligned NaCl-type structural motifs separated by a mirror plane of PbS7 monocapped trigonal prisms. In the lillianite homologous series, SnPb2Bi2S6 can be classified as 4,4L, where the superscripted numbers indicate the maximum numbers of edge-sharing octahedra in the two adjacent NaCl-shaped slabs along the diagonal direction. The obtained SnPb2Bi2S6 phase exhibited good thermal stability up to 1000 K and n-type degenerate semiconducting behavior, with a power factor of 3.7 μW cm–1 K–2 at 773 K. Notably, this compound exhibited a very low lattice thermal conductivity of 0.69–0.92 W m–1 K–1 at 300–1000 K. Theoretical calculations revealed that the low thermal conductivity is caused by the complex crystal structure and the related elastic properties of a low Debye temperature, low phonon velocity, and large Grüneisen parameters. A reasonable figure of merit (ZT) of ∼0.3 was obtained at 770 K.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2023
·Vol. 34
·期 13
·1096
·
IF 2.8
Gu Wen,Liu Bingguo,Li Shunzi,Hu Baofu,Xu Jian,Wang Jian,Du Baoli
Cu 2 SnS 3 (CTS), as a potential thermoelectric (TE) material, the electrical and thermal transport properties are heavily determined by its original phase structure and the following phase evolution upon heating. Unlike previous studies that induced CTS phase transition by doping, this study used mechanical alloying powder as the precursor and successfully prepared phase-pure cubic (c-) and monoclinic (m-) CTS samples, as well as two-phase mixed samples with different percentage composition of c-CTS and m-CTS, by simply adjusting the hot pressing temperature. Firstly, phase structures of hot-pressed specimens were determined and confirmed by XRD refinement, SEM, TEM, and Raman spectroscopy. Secondly, thermodynamic property was analysis by DSC analysis, and phase evolution was detailed by analyzing specimens quenched at various temperatures. Then, the electrical and thermal transport properties were measured up to 500 °C, and were correlated with phase evolution analyzed above. Benefiting from cationic disorder, a maximum zT of 0.42 at 500 °C was achieved in c-CTS samples hot-pressed at 575 °C. The phase evolution of CTS was comprehensively investigated by using high-quality samples. The results indicate that phase transition is the potential mechanism for the doping effect in most studies, providing some guidance for improving the performance of environmentally friendly TE sulfides.
研究领域:
材料科学
·
凝聚态物理
·
无机化学
·
能源材料
·
热电转换
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2020
·Vol. 47
·期 5
·6548-6553
·
IF 3.83
Chuangchuang Ruan,Hongzhang Song,Mengmeng Fan,Haoshan Hao,Shaohui Liu
Misfit-layered oxides Ca 3 Co 4 O 9+δ + z wt% SiC ( z = 0.00, 0.025, 0.05, 0.1, 0.2) samples were synthesized using solid-state sintering method and the effects of SiC nanoparticles diapersion on the thermoelectric properties were investigated. Thermoelectric properties of Ca 3 Co 4 O 9+δ + z wt% SiC ( z = 0.00, 0.025, 0.05, 0.1, 0.2) were investigated up to 923 K. Compared with pure sample, the electrical resistivity of SiC-added samples reduces, for Ca 3 Co 4 O 9+δ + z wt% SiC ( z = 0.00, 0.025, 0.05, 0.1, 0.2) ceramic samples with x ≤ 0.05, the electrical resistivity decreases with increasing SiC nanoparticles adding amounts. And, the electrical resistivity exists transition from semiconductor to metal conduction mechanism. While, the thermal conductivity also decreases due to the addition of SiC nanoparticles . As a result, the Ca 3 Co 4 O 9+δ + 0.2 wt% SiC sample had the lowest thermal conductivity of 1.47 W/Km at 923 K, which was 18.4% lower than that of the Ca 3 Co 4 O 9+δ sample. The ZT value of Ca 3 Co 4 O 9+δ + 0.05 wt% SiC can reach 0.218, which is 40.9% higher than the pure Ca 3 Co 4 O 9+δ sample.
研究领域:
材料科学
·
凝聚态物理
·
无机非金属材料
·
能源材料
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2020
·Vol. 55
·期 20
·8642-8650
·
IF 3.553
Chen Shaoping,Xu Libin,Li Rong,Fan Wenhao,Chen Yanzuo,An Decheng,Wang Wenxian,Wu Yucheng
Energy filtering effect is helpful to decouple Seebeck coefficient and electric conductivity, and dopant is helpful for improving conductivity; in this work, synergetic function of both is supposed to enhance zT values of tellurium.
In bulk Te and Sb 0.003 Te 0.997 , the Ni/Te heterojunction was built by electroless plating combined with spark plasma sintering. The Ni/Te interface barrier successfully decoupled the relationship between the Seebeck coefficient and the electrical resistivity. The Seebeck coefficient and resistivity of Ni/Te samples increased by 37.9% and decreased by 28.1%, respectively. Meanwhile, the thermal conductivity of the Ni/Te samples decreased by 25.8% (T = 300 K), and the zT value was increased by 36.4% compared to the pure Te sample. Consequently, a peak zT of 0.96 at 550 K is achieved in 18wt %Ni/Sb 0.003 Te 0.997 sample,which is 50% higher than Sb 0.003 Te 0.997 samples. This work indicates that electroless plating combined with spark plasma sintering is an effective method to construct heterojunction in bulk materials. This method should be widely applicable to various materials for achieving better thermoelectric properties.
研究领域:
材料科学
·
凝聚态物理
·
能源材料
·
半导体物理
·
热电转换
✓ 已验证
DOI
高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2024
·Vol. 45
·期 5
·117112
·
IF 5.8
Yaqian Du,Jianbo Li,Jun Wang
Compared with perovskite SrTiO 3 , SrO(SrTiO 3 ) 2 exhibits lower thermal conductivity , while maintaining a high Seebeck coefficient , making it a promising material for photothermoelectric conversion. However, the relationship between its infrared and thermoelectric properties remains unexplored. This study examines the effect of Gd doping on these properties of SrO(SrTiO 3 ) 2 . Increased Gd doping induces a gradual transformation of SrO(SrTiO 3 ) 2 -based into a SrTiO 3 -based material, resulting in a composite comprising three phases and a notable reduction in thermal conductivity . At 973 K, the thermal conductivity decreases to a minimum of 1.4 W m −1 K −1 , which is 23 % lower than undoped SrO(SrTiO 3 ) 2 and 51 % lower than SrTiO 3 . Like SrTiO 3 , SrO(SrTiO 3 ) 2 absorbs infrared radiation in the 8–14 μm range. Although the highest ZT value reaches only 0.06 at 973 K, it shows a positive correlation with infrared emissivity. These findings are valuable for advancing the application of thermoelectric effects and the development of high-performance infrared materials.
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
能源材料
·
红外光学
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2015
·
IF 2.999
Ying Lei,Yu Li,Lin Xu,Junyou Yang,Rundong Wan,Hongming Long
Nano-structured Half-Heusler TiNiSn thermoelectric bulk was prepared by microwave-assisted rapid solid-state synthesis and sintering. The mixture of powders of Ti, Ni, Sn was cold pressed before being heated by microwave irradiation. A microwave susceptor material rapidly heats the elemental starting materials inside an evacuated quartz tube resulting in near single phase compounds in 4 min 20 s. The synthesized sample was milled for 30 min in an agate mortar and cold pressed for the following sintering. An 86% density of TiNiSn thermoelectric bulk contains ∼100 nm pore and nanocrystal was sintered in 20 min. For TiNiSn bulk, low thermal conductivity of 2–3 W/m·K at temperatures in the range of the room temperature to 773 K. The ZT values of around 0.3 are found, with the microwave-prepared sample displaying noticeable superior properties over conventionally prepared half-Heuslers due to inclusion of nanopore and In-situ nanocrystal.
研究领域:
材料科学
·
无机非金属材料
·
功能材料
·
固态化学
·
纳米材料
✓ 已验证
DOI
高影响因子
THIN SOLID FILMS
·
2013
·
IF 1.604
Shufang Wang,Shanshan Chen,Guoying Yan,Fuqiang Liu,Shouyu Dai,Jianglong Wang,Wei Yu,Guangsheng Fu
c-axis oriented nanocrystalline Bi 2 Sr 2 Co 2 O y thin films with the average grain size of 25 nm have been achieved by chemical solution deposition combined with a rapid annealing process in oxygen. The resistivity and Seebeck coefficient of the nanostructured films are about 7.0 mΩ·cm and 171 μV/K at 873 K, resulting in a power factor 2–3 times larger than that of the best reported value in the coarse-grained Bi 2 Sr 2 Co 2 O y polycrystalline bulks. Since the thermal conductivity can be greatly reduced due to the increased phonon scattering at the grain boundaries of nanocrystalline films as well as at film surface and at film/substrate interface, great improvements in the ZT are expected in the nanocrystalline Bi 2 Sr 2 Co 2 O y thin films .
研究领域:
材料科学
·
凝聚态物理
·
无机非金属材料
·
能源材料
✓ 已验证
DOI
高影响因子
Results in Physics
·
2021
·
IF 4.476
Lin Bo,Yongpeng Wang,Wenying Wang,Lei Wang,Fujin Li,Min Zuo,Yanzhen Ma,Degang Zhao
The ternary Cu 3 SbSe 4 thermoelectric material with diamond-like structure exhibit good thermoelectric performance in the middle temperature region. In this study, the Cu 3− x Ni x SbSe 4 ( x = 0–0.03) materials were fabricated by melting-ball milling-hot pressing process. The influences of grain size and compositional gradient on the microstructure and thermoelectric properties of Cu 3− x Ni x SbSe 4 were evaluated. It is found that the electrical conductivity of Cu 2.97 Ni 0.03 SbSe 4 was about 33% higher than that of Cu 3 SbSe 4 sample, and the lattice thermal conductivity was reduced from 3.3 Wm −1 K −1 to 2.4 Wm −1 K −1 at room temperature due to the grain refinement and more V Se defects. The maximum zT value for the Cu 2.97 Ni 0.03 SbSe 4 sample was 0.62 at 650 K.
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
热电材料
·
半导体材料
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）