JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY
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2012
·Vol. 50
·期 24
·4995-4999
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IF 3.919
Zhihai Hao,Hou Chen,Delong Liu,Lijun Fan
Sn(0)-mediated single electron transfer-living radical polymerization (SET-LRP) of acrylonitrile (AN) with carbon tetrachloride (CCl 4 ) as initiator and hexamethylenetetramine (HMTA) as ligand in N, N -dimethylformamide (DMF) was studied. The polymerization obeyed first order kinetic. The molecular weight of polyacrylonitrile (PAN) increased linearly with monomer conversion and PAN exhibited narrow molecular weight distributions. Increasing the content of Sn(0) resulted in an increase in the molecular weight and the molecular weight distribution. Effects of ligand and initiator were also investigated. The block copolymer PAN- b -polymethyl methacrylate with molecular weight at 126,130 and polydispersity at 1.36 was successfully obtained. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012
研究领域:
高分子化学
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聚合反应
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功能高分子
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材料化学
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有机合成
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DALTON TRANSACTIONS
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2025
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IF 3.3
Sourav Mondal,Ya-Shan Huang,Zhong-Ming Sun,John E. McGrady
We report here the synthesis and structural characterisation of the [Ru@Sn12]4- anion, a new member of the icosahedral M@E12 family of endohedral Zintl clusters. The cluster is approximately icosahedral, but a signicant variance in the Ru-Sn and Sn-Sn bond lengths is a result of back-bonding from the Ru center to the Sn12 cage. We use density functional theory to place the structural chemistry of [Ru@Sn12]4- into the wider context of the M@E 12 family.
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ACS Applied Materials & Interfaces
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2025
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IF 8.2
Qixian Zheng,Tingting Zhang,Suiting Ning,Xiangbin Chen,Tian Yu,Zhangheng Lai,Gangjian Tan,Xinfeng Tang,Ning Qi,Zhiquan Chen
As a typical argyrodite compound, Ag8SnSe6 is a very promising candidate for thermoelectric materials due to its inherently ultralow lattice thermal conductivity. However, the main obstacle to further improving its thermoelectric properties is its low intrinsic carrier concentration. Appropriate doping may increase the carrier concentration, but the electronic thermal conductivity will also increase simultaneously, which partially compensates for the optimized power factor. This is particularly prominent for materials with ultralow lattice thermal conductivity. In this study, SnI2 was introduced into Ag8SnSe6, which provides more carriers and thus successfully improves the electrical properties. The maximum power factor at 748 K is enhanced from 4.63 μW cm–1 K–2 to 5.83 μW cm–1 K–2 after adding 3 at. % of SnI2. Meanwhile, the substitution of I for Se weakens the chemical bonding strength, resulting in a lowered sound velocity. In addition, doping of I at the Se site also enhances the bond asymmetry, which causes a stronger lattice anharmonicity. As a result, an extremely low lattice thermal conductivity of 0.058 W m–1 K–1 is achieved at 748 K. Eventually, a high zT value of 1.36 was obtained through the above synergistic optimization, which is a 39% improvement compared to the pristine sample (0.98). Our study demonstrates that chemical bonding engineering is an effective way to further suppress the lattice thermal conductivity of Ag8SnSe6 and also provides guidance for improving the thermoelectric properties of other argyrodite compounds.
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Advanced Science
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2025
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IF 14.1
Kunpeng Zhao,Min Li,Hexige Wuliji,Haotian Gao,Hongyi Chen,Pengfei Qiu,Zhengyang Zhou,Xun Shi
Conventional strategies for suppressing lattice thermal conductivity κ L typically focus on maximizing phonon scattering to reduce phonon mean free path. Such reductions, however, are limited to the interatomic spacing or phonon wavelength. Alternatively, herein, an effective approach is proposed to lower phonon velocity by introducing atoms with significant atomic mismatch into the crystal lattice of three meta-phases. Specifically, substituting Te for S in Ag 8 SnS 6 and Cu 2 S, or Sn for Si in Mg 2 Si considerably increases the atomic mass and weakens the chemical bonding, causing notable reductions in the sound velocity. This reduction further leads to an amorphous-like, extremely low lattice thermal conductivity κ L across the whole temperature range. Consequently, we achieve outstanding thermoelectric performance in these atomic mismatched meta-phases, with a maximum zT of 1.0 for Ag 8 SnS 4.99 Te, 1.1 for Mg 2 Si 0.5 Sn 0.5 , and 2.0 for Cu 2 S 0.5 Te 0.5 . The work demonstrates a new approach to manipulating thermal conductions through lattice softening, providing a promising pathway for designing high-performance thermoelectric materials.
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Advanced Optical Materials
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2025
·Vol. 13
·期 35
·e01944
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IF 7.2
Zijuan Ma,Jiaming Song,Xin Zhao,Yelong Wu,Juanjuan Yang,Chengzheng Ye,Jialong Ma,Feng Teng,Peng Hu,Haibo Fan
SnS 2 , a promising candidate for high-performance photodetectors (PDs), encounters challenges as high dark current and poor stability in practical applications. Herein, pristine SnS 2 (P 0 SS) and phosphorus (P) doped SnS 2 single crystals (P 1 SS, P 2 SS) are synthesized and implanted into devices with an asymmetric electrode contact structure, which demonstrate self-powered photoelectric responses. At 0 V, P-doped SnS 2 PDs exhibit significant broadening of the response spectrum. Meanwhile, the P 2 SS device achieves the highest responsivity of 57.4 mA W −1 and specific detectivity of 1.22 × 10 11 Jones at 365 nm, and has superior long-term cyclic stability. At 1 V, the dark current of P 2 SS is significantly lowered, and the on-off ratio is about two orders of magnitude higher than those for the other two at 515 nm. The self-powered phenomenon of the three PDs here is attributed to the asymmetric Schottky barriers at the two gold/SnS 2 interfaces of the source and drain electrodes. The enhanced photoelectric response of the P-doped SnS 2 PDs can be due to the lowered conductivity and higher exciton separation efficiency by the compensation doping. This work offers a promising pathway for optimizing the optoelectronic detection capability of future portable devices.
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Journal of Energy Chemistry
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2026
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IF 15.6
Ruijie Guo,Zhenxi Li,Yiming Guo,Shilun Gao,Chao-Peng Wang,Huabin Yang,Peng-Fei Cao
Achieving high monomer conversion of 1,3-dioxolane (DOL) enhances the electrochemical stability of PDOL-based electrolytes, while the reduced liquid contents lead to low ionic conductivity. Addition of plasticizers mitigates the conductivity decrease, yet renders decreased monomer conversion. To address this dilemma, a novel gel polymer electrolyte (In-GPE) was developed via in situ polymerization of plasticizer-rich DOL electrolyte using a highly efficient initiator, i.e., indium trifluoromethanesulphonate (In(OTf) 3 ). The In(OTf) 3 can also be reduced to metallic indium (In), which promotes the interfacial alloying with Li metal with significantly lower Li + binding energy. The incorporation of plasticizers simultaneously enhances the electrochemical window and ionic conductivity of the resulting electrolytes. The In-GPE exhibits a wide electrochemical window (∼4.5 V), high ionic conductivity of 5.14 × 10 −4 S cm −1 , and a superior stable interface. The assembled Li/In-GPE/LFP cell exhibited ultralong cycle performance over 3000 and 2000 cycles at 1 and 2 C, respectively. Meanwhile, even increasing the voltage to 4.2 V, the Li/In-GPE/LFP cell maintained the reversible capacity of 128.9 mA h g −1 at 1 C for 500 cycles. The high-voltage Li/In-GPE/NCM811 cell also delivers excellent cycling performance. The design principle of PDOL-based GPE via a highly efficient initiator in a plasticizer-rich system provides a new pathway to the large-scale application of polymer electrolyte with superior electrochemical performance.
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ADVANCED MATERIALS
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2026
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IF 26.8
Kangwang Wang,Jie Zhan,Jun Liu,Zaichen Xiang,Wanyi Zhang,Lingyong Zeng,Kai Yan,Yan Sun,Huixia Luo
The photochemical CO 2 reduction reaction (CRR) represents a zero-carbon pathway for converting CO 2 into value-added chemicals, yet its industrial implementation has been constrained by low selectivity and product diversity. Dirac nodal arc semimetals characterized by ultrahigh carrier mobility (>25 000 cm 2 ·V −1 ·s −1 ) offer a promising platform to search for efficient catalysts for CO 2 conversion. Herein, we demonstrate that strategic Pt incorporation into PdSn 4 optimizes the electronic structure and carrier dynamics of this Dirac semimetal. Experimental and theoretical analyses reveal that the resulting Pd─Sn─Pt local electronic structure redistributes charge density around Pd and Pt atoms, which facilitates C─C coupling via *OC─COH and *OC─CHOH intermediates and enhances carrier mobility by 40% versus the pristine PdSn 4 single crystal. The optimized Pd 0.4 Pt 0.6 Sn 4 single crystal achieves C 2 H 4 i) formation rate of 328 µmol∙g −1 ∙h −1 ; ii) product selectivity of 73.1%; iii) electron-based selectivity of 89%. This work establishes electronic-structure-tunable Dirac semimetals as a new paradigm for multi-carbon photochemical CO 2 reduction, providing a design strategy for next-generation photocatalysts.
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APPLIED SURFACE SCIENCE
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2026
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IF 6.6
Sadegh Ghorbanzadeh,Wei Zhang,Zeinab Sanaee,Somayeh Mohammadi
The synthesis of MXenes with high surface area and porosity remains challenging due to reliance on aggressive etchants and delamination step. This work reports a mild and straightforward strategy to synthesize Ti 3 C 2 and Ti 2 C MXenes using a nano-platelet MAX phase precursor prepared via anisotropic molten salt synthesis. This precursor’s unique architecture—featuring a 15× higher surface area and 5× greater pore volume than conventional MAX phases—enables efficient Al removal with dilute hydrofluoric acid (4% HF), eliminating the need for delamination agents or post-etching processing. These MXenes achieve a high specific surface area of 105m 2/g and pore volume of 0.11c m3/g, representing 5- and 3-fold improvements over conventional MXenes. Notably, this work demonstrates the first investigation of MAX phase photothermal properties and establishes a new synthesis paradigm that eliminates delamination requirements while achieving record photothermal conversion efficiency (71.4% for MXene, 63.1% for MAX). The pre-engineered nanoplatelet architecture inherently prevents restacking, enabling stable performance for over 200 days without intercalation agents—addressing a critical limitation in MXene shelf-life and practical applicability.
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Advanced Energy Materials
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2026
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IF 25.5
Wendong Zhu,Qiuxiang Wang,Haoming Xing,Jing Zhang,Yuanyuan Wang,Yuhong Xu,Jiaxing Xiong,Rong Xuan,Wenwu Xu,Da Chen,Xiaohui Liu,Like Huang,Yuejin Zhu,Changlei Wang
Solution-processed SnO 2 nanoparticles are promising nonfullerene electron transport materials, yet their performance in low-bandgap (LBG) tin-lead perovskite solar cells (Sn-Pb PSCs) is hindered by inadequate charge transport and interface energy misalignment. To address these issues, we developed a SnO 2 -graphene quantum dot (GQD) electron transport layer (ETL) by functionalizing solution-processed SnO 2 with GQDs. Both theory calculations and experiments indicate the electron-bridging role of GQDs in perovskite/GQD-SnO 2 heterojunction, greatly facilitating directional charge transfer. Moreover, GQDs play a dual role by passivating defects on both SnO 2 and perovskite surfaces, while optimizing the energy level alignment at this critical interface. Consequently, the optimized LBG Sn-Pb PSCs exhibit significantly enhanced voltage and fill factor, achieving a champion efficiency of 23.38% with robust stability under ISOS-L-1 and ISOS-D-2 protocols. When integrated into all-perovskite tandem solar cells, the optimized device delivers a promising efficiency of 29.40%. This work enables the first viable inorganic ETL for realizing high-performance Sn-Pb PSC and its tandem applications.
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APPLIED SURFACE SCIENCE
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2026
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IF 6.6
Mengmeng Li,Busheng Zhang,Junchen Huang,Hongming Chen,Weiguang Wang,Xinbo He
Air annealing and TiC coating engineer diamond surfaces for enhanced interfacial bonding. • Surface-treated Diamond/GaInSn composites achieve thermal conductivity up to 111.6 W m -1 K −1 . • The study reveals a trade-off between bulk conductivity and practical interfacial thermal resistance. • Engineered composites demonstrate superior cooling performance in photovoltaic cell applications. The ever-increasing power density and integration level of modern electronic devices, driven by advances in artificial intelligence and energy technologies, impose stringent demands on thermal management. Conventional cooling strategies often fail to cope with the escalating heat flux, highlighting the urgent need for high-performance thermal interface materials (TIMs). Here, we employ two surface engineering strategies, air annealing and titanium carbide (TiC) coating, to tailor the interfacial properties of micrometer-sized diamond particles. The modified diamonds are then embedded in a gallium-based liquid metal (LM) matrix, yielding composite TIMs with enhanced thermal conductivity and robust interfacial stability. The resulting composites exhibit remarkable thermal conductivities, reaching of up to 111.6 W m −1 K −1 for the air-annealed and 102.4 W m −1 K −1 for the TiC-coated sample. The surface treatments markedly improved the interfacial contact continuity and chemical environment between diamond and liquid metal, thereby mitigating LM leakage and enhancing the overall mechanical integrity of the composites. When integrated into high-power electronic devices, such as photovoltaic cells, these engineered TIMs demonstrate efficient heat dissipation and markedly suppress the operating temperature of the heat source. This work provides a promising material solution for thermal management in high-power electronics and advances the practical application of liquid metal-based composites. In this study, composite thermal interface materials (TIMs) were fabricated using diamond and GaInSn liquid metal as raw materials via a facile surface treatment process, enabling efficient thermal management of electronic devices. Air annealing and titanium carbide (TiC) coating treatments modified the wettability and interfacial bonding strength between reinforced diamond and liquid metal, thereby effectively enhancing the thermal conductivity of the composites. Download: Download high-res image (149KB) Download: Download full-size image
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CRYSTAL RESEARCH AND TECHNOLOGY
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2026
·Vol. 61
·期 9
·e70162
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IF 2.1
Rongtao Ji,Xiaofang Lai,Yongzhao Feng,Duan Zhao,Jikang Jian
Two-dimensional layered metal dichalcogenide SnS 2 has garnered significant attention due to its outstanding electronic and optoelectronic properties, while large-sized SnS 2 single crystals are essential for the successful preparation of such high-performance SnS 2 -based devices. Currently, chemical vapor transport (CVT) is the mainstream technique for growing SnS 2 single crystals, but it heavily relies on transport agents. Moreover, the residual of these agents may introduce additional point defects, which could degrade crystal purity and the optoelectronic properties of the resulting material. In this work, a simple solid-state method was adopted to grow high-quality SnS 2 single crystals without transport agents. X-ray diffraction (XRD) confirms that the crystal grows along the ( 0 0 1 001 $\hskip.001pt 001$ ) plane. The Raman spectrum of the SnS 2 single crystal exhibits a characteristic peak at 313 c m − 1 c m − 1 ${\mathrm{c}}{{\mathrm{m}}^{ - 1}}$ , indicating that the crystal has a 2H-SnS 2 configuration. The band gap of 2.12 e V eV ${\mathrm{eV}}$ was determined, and a single photoluminescence (PL) emission peak centred at 567 n m nm ${\mathrm{nm}}$ , with an average PL lifetime of 3.73 n s ns ${\mathrm{ns}}$ was observed. Photoelectric measurements verify that the SnS 2 single crystal possesses fast and stable response curves, with a response time (
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Journal of Energetic Materials
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2026
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IF 1.8
Mingzhu Guo,Zhongyuan Zhang,Zhijiang Jin,Chunlong Huangfu,Xinyu Yang,Hongyan Qu,Zhiyi Li,Feng Luo,Qian Gao
Aluminum powder, a common metallic fuel for propellants and explosives, is limited by high ignition temperatures, incomplete combustion and particle agglomeration. To mitigate these drawbacks, we synthesize core–shell Al–In–Sn ternary alloy fuel by facile melt casting. Eutectic phase separation drives spontaneous formation of an InSn₄ protective shell on Al particle surfaces. The InSn₄ shell functions as a passivation barrier at low temperatures to inhibit premature oxidation and guarantee storage stability. Upon heating above 250 °C, thermal expansion mismatch ruptures the molten shell, exposing active Al and triggering strong exothermic oxidation. The optimized 80Al–In–Sn sample exhibits an oxidation heat release of 1220 J/g (11.5-fold higher than pristine Al), a mass gain efficiency of 76.3%, and reduced activation energy (242.9 kJ/mol by Kissinger method versus 403 kJ/mol for pure Al), verifying greatly enhanced reactivity. Combined DSC and XRD results reveal the temperature-controlled oxidation mechanism. This work offers guidelines for designing storable, highly reactive alloy fuels and facilitates their engineering applications within energetic materials.
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