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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2025 ·Vol. 36 ·期 25 ·1-10 · IF 2.8

Low-temperature sintering of Al2O3 ceramics with high Q × f value

Yang Jing,Dan Jiaying,Zhang Yun,Ding Shihua

This study proposed a novel glass-phase sintering additive composed of ZnO, Al 2 O 3 , SiO 2 , B 2 O 3 , and Co 2 O 3 (ZASBC). Its effects on the structure and properties of Al 2 O 3 ceramics were investigated. XRD results indicated that the addition of ZASBC preserved the original hexagonal crystal system of Al 2 O 3 ceramics while reducing the optimal densification temperature to 1350 °C, achieving a bulk density of 3.972 g/cm 3 . The dielectric constant ( ε r ) reached 9.79, with its variation primarily attributed to relative density. At 1 wt% ZASBC addition, the quality factor ( Q   ×  f ) of the sample improved to 131,272 GHz. This enhancement was driven by high packing fraction and relative density. Additionally, the temperature coefficient of resonant frequency ( τ f ) was found to correlate mainly with ε r . The Al 2 Oz 3 –1 wt% ZASBC samples sintered at 1400 °C demonstrated outstanding microwave dielectric properties.

CAS / MDL: 1314-13-2
研究领域: 材料科学 · 陶瓷 · 介电材料 · 微波技术
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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2024 · IF 5.8

Two K20 microwave dielectric ceramics SrLnAlO4 (Ln = Eu, Gd) with near-zero τf and contrasting Q×f

Sijie Wang,Weishuang Fang,Daofu Wu,Kuiyi Meng,Ying Tang,Junfeng Yang,Mingjian Ding,Huixing Lin,Liang Fang

K20 microwave dielectric ceramics SrLnAlO 4 (Ln = Eu, Gd, and Ho) were prepared at 1440–1520 °C. SrEuAlO 4 and SrGdAlO 4 crystallized into tetragonal K 2 NiF 4 -type structures. While SrHoAlO 4 was a mixture (SrHo 2 Al 2 O 7 , Ho 2 O 3 , and Sr 3 HoAl 2 O 7.5 ) due to the too-small radius of Ho 3+ to bond in [HoO 9 ] dodecahedron . SrEuAlO 4 and SrGdAlO 4 exhibited near-zero τ f values of +1.7 and +4.3 ppm/°C and low ε r (19.37 and 19.14) along with contrasting Q × f values (70,030 and 5560 GHz). Compared with the modified molecular polarizability ( α Corr ) based on the bond valence deviation, the α obs values of SrEuAlO 4 and SrGdAlO 4 are much higher, indicating that their dielectric polarizabilities were underestimated, and this phenomenon was mainly influenced by rattling cations, which also causes their τ f with near-zero values. Due to the magnetic subsystem adversely affecting microwave dielectric losses , the worsened Q × f value of SrGdAlO 4 compared to that of SrEuAlO 4 is due to the high magnetic moment of Gd 3+ (7.94 μ B ).

研究领域: 材料科学 · 电子工程
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CERAMICS INTERNATIONAL · 2022 · IF 5.532

Phase compositions and crystal structure of Sn-deficient Ca2Sn2Al2O9 microwave dielectric ceramics with high Q×f values

Kang Du,Changzhi Yin,Wei Zhu,Cai Zhou,Bohan Zhang,Tingting Wang,Shengxiang Wang,Wen Lei

The phase compositions and microwave dielectric properties of Sn-deficient Ca 2 Sn 2 Al 2 O 9 ceramics in this study were explored. The CaSnO 3 and SnO 2 second phases existed at Ca 2 Sn 2- x Al 2 O 9-2 x ( x  = 0) ceramic. Single-phase Ca 2 Sn 2 Al 2 O 9 ceramics were obtained at 0.08 ≤  x  ≤ 0.1, and the orthorhombic structure with the Pbcn space group of Ca 2 Sn 2 Al 2 O 9 was verified. For multi-phase Ca 2 Sn 2- x Al 2 O 9-2 x (0 ≤  x  ≤ 0.06) ceramics, their microwave dielectric properties were mainly affected by second phase contents, and their Q  ×  f values increased gradually with the rise in x . High Q  ×  f (105,700 GHz at 12.99 GHz) was obtained by the Ca 2 Sn 2- x Al 2 O 9-2 x ( x  = 0.08) ceramic with high intrinsic Q  ×  f (175,000 GHz). The large deviation between measured Q  ×  f values and fitted intrinsic Q  ×  f values could be ascribed to the Sn 4+ vacancies of the Sn-deficient Ca 2 Sn 2 Al 2 O 9 ceramics. The Ca 2 Sn 2- x Al 2 O 9-2 x (0 ≤  x  ≤ 0.1) ceramics presented large negative τ f values, and this τ f was mainly affected by τ ε . Meanwhile, the Ca 2 Sn 2- x Al 2 O 9-2 x ( x  = 0.08) ceramic achieved optimal microwave dielectric properties ( ε r  = 8.3, Q  ×  f  = 105,700 GHz at 12.99 GHz and τ f  = −63.7 ppm/°C), indicating the good feature of this material for millimetre-wave applications.

研究领域: 材料科学 · 电子材料
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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2022 · IF 6.364

High Q×f values of Zn-Ni co-modified LiMg0.9Zn0.1-xNixPO4 microwave dielectric ceramics for 5G/6G LTCC modules

Shuai Li,Chen Li,Minmin Mao,Kaixin Song,Yaseen Iqbal,Amir Khesro,Sinan S. Faouri,Zhilun Lu,Bing Liu,Shikuan Sun,Dawei Wang

In this work, Zn-Ni co-modified LiMg 0.9 Zn 0.1- x Ni x PO 4 ( x  = 0–0.1) microwave dielectric ceramics were fabricated using a solid state synthesis route. Rietveld refinement of the XRD data revealed that all ceramic samples have formed a single phase with olivine structure. SEM images showed that the samples have a dense microstructure, that agrees with the measured relative density of 97.73 %. Based on the complex chemical bond theory, Raman and infrared reflectance spectra, we postulate that ε r is mainly affected by the ionic polarizability, lattice and bond energy, while P-O bond plays a decisive role in Q×f and τ f value. Optimum properties of Q×f ~ 153,500 GHz, ε r ~ 7.13 and τ f ~ −59 ppm/°C were achieved for the composition LiMg 0.9 Zn 0.06 Ni 0.04 PO 4 sintered at 875 ℃ for 2 h. This set of properties makes these ceramics an excellent candidate for LTCC , wave-guide filters and antennas for 5 G/6 G communication applications.

研究领域: 材料科学 · 电子工程
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JOURNAL OF SOLID STATE CHEMISTRY · 2025 · IF 3.5

Enhanced Q×f in CoTi(Nb1-xVx)2O8 ceramics by tuning oxygen vacancy concentration and Co valence state

Shengming Liu,Yun Zhang,Shihua Ding,Tianxiu Song

V cation was introduced at Nb-site in CoTiNb 2 O 8 for the purpose of tuning the defects concentration. XRD analysis indicated that no secondary phase developed over the whole composition range. The sintering temperature decreased to 1150 °C in current work, compared with pure CoTiNb 2 O 8 ceramic (∼1250 °C). V-introduction inhibited grain growth and benefited grain homogenization. The decreased molecular dielectric polarizability and blue shift of Raman A 1g mode both made lower ε r from 59.2 to 41.8. Based on the X-ray photoelectron spectroscopy (XPS), V doping decreased the oxygen vacancy concentration and tuned the Co valence state. The defects compensation by oxygen and Co vacancies significantly improved Q × f up to 38,012 GHz, accompanied with a 50% rise. The slight increase in τ f was attributed to the Nb-O bond energy reduction. The CoTi(Nb 0.97 V 0.03 ) 2 O 8 had a high ε r of 54.6 with good Q × f of about 38,012 GHz and τ f =96.47 ppm/°C. Enhanced Q × f and low sintering temperature were achieved simultaneously.

研究领域: 材料科学 · 物理学
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ADVANCED ENGINEERING MATERIALS · 2024 · IF 3.4

Effect of Ni Substituted MgZrTa2O8 Ceramics on Sintering Characteristics and Microwave Dielectric Properties

Lan Gao,Yun Zhang,Shihua Ding

Herein, Mg 1− x Ni x ZrTa 2 O 8 ( x = 0, 0.1, 0.3, 0.5, 0.8, 1) ceramics are synthesized using a solid-phase reaction method. Ni 2+ replacing Mg 2+ improves the drawback of high sintering temperature and poor temperature stability. The samples have a relative density above 95% at the optimal sintering temperature. The sintering temperature of Mg 1− x Ni x ZrTa 2 O 8 reduces from 1475 to 1400 °C. And single-phase Mg 1− x Ni x ZrTa 2 O 8 ceramics with monoclinic wolframite structures are analyzed. According to the Rietveld refinement results, with the doping of Ni 2+ , the transformation of unit cell volume leads to the shift of the main peak in the X-Ray diffraction pattern to a higher angle in 0 ≤ x ≤ 0.3 and a lower angle in 0.5 ≤ x ≤ 1. The ε r of Mg 1− x Ni x ZrTa 2 O 8 is comparable to MgZrTa 2 O 8 . At 1400 °C, the Q × f is increased from 10 598 GHz in the undoped sample to 43 041 GHz in Mg 0.9 Ni 0.1 ZrTa 2 O 8 ceramic. The absolute values of τ f of ceramic samples decrease with the excessive Ni 2+ . The desirable dielectric properties ( ε r = 20.79, Q × f = 43 041 GHz, τ f = −33.04 ppm °C −1 ) are obtained at 1400 °C. Ni substitution is effective for MgZrTa 2 O 8 ceramic to optimize densification temperature and retain the high Q × f value.

研究领域: 材料科学 · 电子材料
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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2024 · IF 5.8

A novel Ba3(ZnB5O10)PO4 microwave dielectric ceramic with near-zero τf value for LTCC applications

Sen Peng,Lei Xiao,Yingxiang Li,Lianwen Deng,Jiahui Zhu,Zhenjun Qing,Yecheng Xi

A novel Ba 3 (ZnB 5 O 10 )PO 4 (BZBPO) phosphate ceramic was synthesised using a conventional solid-state technology. The BZBPO ceramic sintered at 850 °C demonstrated exceptional microwave dielectric properties : ε r = 5.88 ± 0.08, Q×f = 52,896 ± 1200 GHz ( f 0 = 16.5 GHz) and τ f = 0.34 ± 0.25 ppm/°C. Raman spectroscopy revealed that ε r and Q×f were negatively correlated with the Raman shift and full width at half maximum of the BZBPO ceramic, respectively. Meanwhile, Phillips–Vechten–Levine theory revealed that Q×f was highly correlated with the lattice energy ( U b ), and τ f was closely related to the bond energy ( E b ) and the thermal expansion coefficient. Among contribution ratios of individual chemical bonds, the B–O bond mainly contributed to U b , E b and ionicity, proving that the bond dominantly affected the dielectric properties of the BZBPO ceramic. Finally, the BZBPO ceramic was co-fired with silver, demonstrating its potential applicability towards low temperature co-fired ceramic technology.

研究领域: 材料科学 · 电子工程
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Ceramics-Switzerland · 2024 ·Vol. 7 ·期 1 ·426-435 · IF 2.7

Effects of Replacing Co2+ with Zn2+ on the Dielectric Properties of Ba [Zn1/3(Nb1/2Ta1/2)2/3]O3 Ceramics with High Dielectric Constant and High Quality Factor

Yuan-Bin Chen,Yu Fan,Shiuan-Ho Chang,Shaobing Shen

In this study, we used solid-state synthesis to prepare Ba[(ZnxCo1−x)1/3(Nb0.5Ta0.5)2/3]O3microwave ceramics for mobile communications. Compared with Ba[Zn1/3(Nb0.5Ta0.5)2/3]O3, in the prepared materials, Co2+substitution with Zn2+improved the Q × f value and enabled densification and sintering at a lower temperature. We used X-ray diffraction (XRD) and scanning electron microscopy (SEM) to analyze the obtained microstructure. Ba[(ZnxCo1−x)1/3(Nb0.5Ta0.5)2/3]O3was found to have a 1:2 ordered hexagonal structure, and its Q × f value increased with the increase in sintering temperature. In this work, excellent microwave dielectric properties—τf= −0.7 ppm/°C, εr= 34.5, and Q × f = 110,000 GHz—were obtained by sintering Ba[(Zn0.3Co0.7)1/3(Nb0.5Ta0.5)2/3]O3at 1400 °C for 5 h.

研究领域: 材料科学 · 电子工程
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CERAMICS INTERNATIONAL · 2024 · IF 5.1

Microwave dielectric properties of Li2Mg2Ga2Ti3O12 ceramics with spinel-type

Chang Jiang,Linzhao Ma,Guo Tian,Longxiang Jiang,Hongzhi Xiao,Qianbiao Du,Hao Li

Novel spinel-type Li 2 Mg 2 Ga 2 Ti 3 O 12 ceramics were prepared by the solid-state method. Rietveld refinement revealed that the Li 2 Mg 2 Ga 2 Ti 3 O 12 ceramics possess a cubic spinel structure with the F d 3 ‾ m ( 227 ) space group. Raman spectrum analysis indicated that the Q  ×  f and FWHM of ceramics exhibit an inverse relationship. According to the P-V-L theory, the Ti-O bond has the highest percentage of contribution to both of bond ionicity and lattice energy, indicating a significant impact on ε r and Q  ×  f , respectively. The Li 2 Mg 2 Ga 2 Ti 3 O 12 ceramics showed the best microwave dielectric properties ( ε r  = 15.72, Q  ×  f  = 69,633 GHz, and τ f  = −20 ppm/°C), sintering at an optimum temperature of 1200 °C. Additionally, a dielectric resonance antenna, on the basis of Li 2 Mg 2 Ga 2 Ti 3 O 12 ceramics was designed and simulated.

研究领域: 材料科学 · 物理学
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JOURNAL OF ALLOYS AND COMPOUNDS · 2023 · IF 6.2

High-Q×f value and temperature stable MgZrTa2O8 ceramics by Li heterovalent substitution

Yun Zhang,Xi Jiang,Xinrui Guo,Shihua Ding,Tianxiu Song

The Mg 1- x Li x ZrTa 2 O 8- x /2 ( x  = 0–0.07) ceramics were fabricated to investigate the effects of Li + heterovalent substitution for Mg 2+ . The site occupancy and existence of the Li + were examined based on Vienna Ab-initio Simulation Package (VASP) and X-ray photoelectron spectroscopy (XPS), respectively. Single phase solid solution with wolframite structure was identified in the whole region. Li + substitution reduced the densification temperature from 1475 °C to 1400 °C. Notably, the Q × f exhibited an obvious increase by up to 74 % from 41,844 GHz at x  = 0–72,782 GHz at x  = 0.05. The Q × f for x  < 0.01 was largely dependent on the intrinsic loss originating from packing fraction, while as 0.01 ≤  x  ≤ 0.05, it was dominated by extrinsic factors, especially the oxygen vacancy concentration. The corresponding dielectric constant ε r decreased in term of ionic polarizability. The variations of resonant frequency temperature coefficient τ f were explained from the views of [TaO 6 ] oxygen octahedral distortion and bond energy. A near-zero τ f was obtained for x  = 0.05 composition, accompanied by ε r = 11.97, Q×f = 72,782 GH at 1450 °C. Li substitution was effective and inexpensive for MgZrTa 2 O 8 ceramic to realize dielectric properties enhancement and densification temperature optimization simultaneously.

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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2025 · IF 6.2

Q factor enhancement in Nd2Zr3(MoO4)9 microwave ceramics via B-site (Bi0.5Ta0.5)4 + substitution and low-temperature sintering

Yuan-Bin Chen,Ling Tang,Xiuyuan Su

Low-temperature sintered microwave dielectric ceramics are gaining increasing attention for next-generation wireless communication systems, particularly within the 6 G frequency range. However, materials that simultaneously exhibit ultra-low dielectric loss and low sintering temperatures remain scarce. In this study, Nd 2 [Zr 1-X (Bi 0.5 Ta 0.5 ) X ] 3 (MoO 4 ) 9 ceramics were prepared via a conventional solid-state reaction method and exhibited a single-phase structure with a trigonal symmetry (space group R 3 ¯ C, No. 167). The optimal sample at x = 0.11 sintered at 750 ℃ showed excellent performance: ε r = 11.4, Q×f = 186,300 ± 8900 GHz, and τ f = –42.9 ppm/℃. The elevated Q×f value is chiefly ascribed to increased lattice energy, with its variation more plausibly arising from intrinsic effects within the material. The dielectric constant (εᵣ), analyzed using the Clausius–Mosotti equation, was predominantly influenced by ionic polarizability. According to P–V–L theory, the effective bond strength f iNd–O played a major role in determining εᵣ, while τ f was governed by the bond energy and thermal expansion behavior of Mo–O bonds. Raman spectroscopy further confirmed the structure–property relationships. These results suggest that B-site substitution with (Bi 0.5 Ta 0.5 ) 4+ not only promotes densification and increases lattice energy, but also maintains thermal stability, thereby enhancing Q×f without compromising τ f . This system offers strong potential for integration into future microwave dielectric components.

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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2026 ·Vol. 47 ·期 3 ·118901 · IF 6.3

Local-disorder-induced enhancement of εr and Q×f in (Hf, W)-codoped ZnNb2O6

Zipeng Huang,Lili Gan,Lihua Qiao,Yanru Wu,Chenru Hao,Li Cheng,Ziqiang Chi

Microwave dielectric ceramics for next-generation communication systems require a high relative permittivity (

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