NANOTECHNOLOGY
·
2024
·Vol. 35
·期 16
·165502
·
IF 2.9
Yongfeng Zhang,Shuainan Liu,Ruiliang Xu,Shengping Ruan,Caixia Liu,Yan Ma,Xin Li,Yu Chen,Jingran Zhou
β-Ga2O3 has been widely investigated for its stability and thermochemical properties. However, the preparation of β-Ga2O3 thin films requires complex growth techniques and high growth temperatures, and this has hindered the application of β-Ga2O3 thin films. In this study, β-Ga2O3 thin films with good crystalline quality were prepared using a green method, and an ultraviolet (UV) detector based on β-Ga2O3 with a photocurrent of 2.54 × 10–6 A and a dark current of 1.19 × 10–8 A has been developed. Two-dimensional materials have become premium materials for applications in optoelectronic devices due to their high conductivity. Here, we use the suitable energy band structure between Nb2C and Ga2O3 to create a high carrier migration barrier, which reduces the dark current of the device by an order of magnitude. In addition, the device exhibits solar-blind detection, high responsiveness (28 A W−1) and good stability. Thus, the Nb2C/β-Ga2O3 heterojunction is expected to be one of the promising devices in the field of UV photoelectric detection.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
PubMed
高影响因子
CRYSTENGCOMM
·
2024
·
IF 2.6
yufei Song,Xiaojie Guo,Wenxiang Mu,Xutang Tao,Zeliang Gao
β-Ga2O3 is an ultra-wide bandgap semiconductor with immense potential applications in high voltage, electronic devices, and deep-ultraviolet optoelectronic devices, etc. However, to date, the growth of bulk β-Ga2O3 crystals has predominantly utilized melt methods, which are heavily dependent on specific growth vessels. In this work, bulk crystal β-Ga2O3 with a size of 7 × 13 × 4 mm3 is grown using TeO2-Li2CO3 as flux by a top-seeded solution growth (TSSG) method for the first time. It is noteworthy that the saturation point of β-Ga2O3 in the flux has been reduced to 1023 K, significantly lower than its melting point of 2073 K. The resulting β-Ga2O3 crystal exhibits well-formed faces, predominantly the (010), (100), (01(-)1), and (11(-)1(-)) forms, which closely align with the ideal morphological predictions made by the Bravais-Friedel and Donnay-Harker methods.The full-width at half maximum (FWHM) of the rocking curves for the (010) oriented plane is determined to be 140.4″. This work provides a potential β-Ga2O3 crystal growth method with a little platinum loss at a low temperature.
研究领域:
材料科学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED MATERIALS
·
2025
·
IF 26.8
Liyan Wang,Shuai Liu,Ziyuan Liu,Mengjiao Han,Jiehui Tian,Yuchuan Xiao,Qitian Chen,Debo Hu,Lizhi Zhang,Lixing Kang,Qing Dai
Beta-phase gallium sesquioxide ( β -Ga 2 O 3 ), possessing an ultrawide bandgap and high breakdown voltage, exhibits strong potential for deep-ultraviolet photodetection and high-power electronics. However, nanometer-scale line defects, prevalent in β -Ga 2 O 3 growth, degrade device performance by increasing leakage currents and reducing breakdown voltages, thus termed “killer defects”. Critically, the impact of these defects at the atomic scale remains unclear due to limited characterization and a lack of detailed understanding. Here, the observation of novel conductive atomic line defects is reported within β -Ga 2 O 3 nanoflakes using near-field infrared imaging. Combining atomic-resolution imaging with density functional theory calculations, these defects are identified as interstitial Ga atoms migrating along the c -axis. These atomic line defects exhibit a broadband infrared response and quenched cathodoluminescence, indicative of significantly enhanced local conductivity. This elevated conductivity enables subsurface near-field detection of the defects and remote excitation of phonon polaritons in a hexagonal boron nitride ( h BN) capping layer. These findings underscore the distinct conductivity of atomic-scale line defects, emphasizing the need for their controlled management during material synthesis and device fabrication, while simultaneously suggesting opportunities for their exploitation in nanophotonic applications.
研究领域:
材料科学
·
物理学
·
纳米光学
✓ 已验证
DOI
PubMed
高影响因子
Small Science
·
2024
·Vol. 4
·期 11
·2400241
·
IF 11.1
Mingli Liu,Shuai Liu,Jian Yao,Yu Teng,Lin Geng,Alei Li,Lin Wang,Yunfei Li,Qing Guo,Zongjie Shen,Lixing Kang,Mingsheng Long
In recent years, wide-bandgap semiconductor β-Ga 2 O 3 material has been widely studied because of its excellent properties. Simultaneously, 2D metal oxides (2DMOs) have also become a focus of research owing to their superior stability and unique physical properties arising from quantum confinement effects. Therefore, the exploration of 2D β-Ga 2 O 3 is expected to reveal its novel electrical properties in electronic applications. However, the synthesis of high-quality 2D β-Ga 2 O 3 remains a formidable challenge. Herein, a confined space is constructed to synthesize high-quality 2D β-Ga 2 O 3 nanoflakes by enhancing the control of the kinetics of chemical vapor deposition process. In the device results, it is shown that the grown nanoflakes have excellent switching properties and potential artificial synaptic response characteristics. Based on this premise, an artificial recognition system for handwritten numerals is developed, achieving a peak recognition accuracy of approximately 96%. This system holds significant potential for application within an emerging neuromorphic recognition framework tailored for advanced driver-assistance systems. In this work, a new feasible pathway is provided for the synthesis of 2D non-layered oxides and the potential of 2D oxides in the field of neuroanalog electronics and recognition is shown, thereby advancing the fields of 2D β-Ga 2 O 3 electronics and 2DMOs electronics.
研究领域:
材料科学
·
电子工程
·
神经网络
✓ 已验证
DOI
高影响因子
JOURNAL OF PHYSICS D-APPLIED PHYSICS
·
2023
·Vol. 57
·期 1
·015104
·
IF 3.4
Songhao Wu,Zichun Liu,Han Yang,Yeliang Wang
As a simple and effective method for improving the crystalline quality of epitaxial Ga2O3 film, post-thermal treatment has been identified as a competitive process involving crystal reconstruction accompanied by defect formation. In this study, β-Ga2O3 films grown on a c-sapphire substrate using low-pressure chemical vapor deposition were subjected to thermal treatment at 1000 °C in air for various duration to investigate the effects of treatment time on the films. The full width at half maximum (FWHM) of x-ray rocking curves initially decreased from 1.62° to 0.98° with increasing treatment time up to 5 h, indicating improved crystallinity. This improvement is likely a result of the reduced angle between Ga2O3 grains and the reconstructed Ga2O3 lattice, oriented towards the (−201) plane due to the thermal treatment, as observed in the transmission electron microscope and electron back-scattering diffraction results. However, under 7 h of treatment, the crystallinity of Ga2O3 degraded, as evidenced by an increased FWHM, as well as by x-ray photoelectron spectroscopy, photoluminescence, and time-of-flight secondary ion mass spectrometry results. This degradation can be attributed to the presence of massive oxygen vacancies and the substitutional incorporation of nitrogen into oxygen sites (NO), resulting in defects.
研究领域:
材料科学
·
晶体生长
✓ 已验证
产品关联
DOI
高影响因子
CATALYSIS COMMUNICATIONS
·
2018
·
IF 3.463
Qiaoqi Li,Yujie Zhang,Lili Zhang,Jun Xia,Xiaoyan Liu,Lei Hu,Fei Wang,Xiaozhong Chu,Pusu Zhao,Jingzhou Yin,Dingfeng Yang
Gallium oxide semiconductors have been developed as effective photocatalysts for water splitting driven by UV light irradiation, but there is no relevant study for the CO 2 photoreduction application. Herein, we report the first investigation of β -Ga 2 O 3 applying to photocatalytic CO 2 reduction under visible light irradiation by doping transition metal ions ( M = V, Cr, Mn, Fe, Co, Ni and Cu) onto the framework. Using sol-gel method, a series of transition metal ions incorporated β -Ga 2 O 3 have been successfully obtained, in which the transition metal substitution content is 2 mol%. The β -Ga 2 O 3 : M photocatalysts are characterized completely by diverse tests (e.g., XRD, XPS, UV–Vis DRS, SEM). The effective replacement of Ga 3+ ion by M ions significantly expands the scope of spectral response from UV light to visible light, and Fe 3+ , Co 2+ , Ni 2+ significantly enhance the photocatalytic activity under visible light irradiation. In these cases, CO and H 2 are evolved as the reduction products from CO 2 and H + by the generated electrons, respectively. Among these effective catalysts we prepared, β -Ga 2 O 3 :Ni exhibits the most substantial CO formation rate of 14.3 μmol/h at 30 °C, and the selectivity for CO evolution exceeds 60.9%. Furthermore, the CO formation rate increases to 24.6 μ mol/h after loading of Ag as the co-catalyst. The stability of the Ag/ β -Ga 2 O 3 :Ni are verified after five cycle of CO 2 photoreduction under visible light.
研究领域:
材料科学
·
环境科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
Small
·
2023
·Vol. 19
·期 30
·2300154
·
IF 13.3
Rong Tu,Xinyu Li,Qingfang Xu,Tenghua Gao,Xian Zhang,Bao-Wen Li,Song Zhang,Takashi Goto,Lianmeng Zhang
The oriented growth of β-Ga 2 O 3 films has triggered extensive interest due to the remarkable and complex anisotropy found in the β-Ga 2 O 3 bulks. Remarkable properties, including stronger solar-blind ultraviolet (SBUV) absorption, better mobility, and higher thermal conductivity, are usually observed along <010> direction as compared to other low-index axes. So far, <010>-oriented β-Ga 2 O 3 film growth has been hindered by the lack of suitable substrates and higher surface energy of the (010) crystal plane. Herein, the first growth of uniquely <010>-oriented β-Ga 2 O 3 films on quartz substrates by laser chemical vapor deposition (LCVD) are reported. By investigating the effects of deposition temperature ( T dep ) and O 2 flow rate ( R O2 ) on the growth of β-Ga 2 O 3 films, it is found that the formation of <010> orientation is closely related to the higher stability of oxygen close-packed planes under O-rich condition. As a result, a grain size of up to ≈2 µm and a deposition rate of up to ≈ 40 µm h −1 are obtained. Metal-semiconductor-metal (MSM) type detector based on <010>-oriented β-Ga 2 O 3 film exhibits ultra-fast response speed, 1–2 orders of magnitude higher than those of most detectors based on β-Ga 2 O 3 films with other orientations.
研究领域:
材料科学
·
半导体物理
·
光电技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Nanoscale
·
2025
·
IF 5.1
Dong Zhu,Chunfeng Wang,Fuhang Jiao,Jiujun Xu,Haoran Xu,Shun Han,Peijiang Cao,Yuxiang Zeng,Ming Fang,Wenjun Liu,Deliang Zhu,Youming Lu
Optical physical unclonable functions (PUFs) are powerful tools to combat counterfeiting, owing to their unpredictable preparation processes and unique, identifiable information content. Achieving high entropy and robustness in optical PUFs is essential for practical applications but remains challenging. This study demonstrates a multilevel, solar-blind, and thermostable PUF based on host-sensitized luminescence of trivalent dysprosium (Dy3+) in β-phase gallium oxide (β-Ga2O3). The controllable occupation of Dy3+ in both tetrahedral and octahedral Ga3+ sites of β-Ga2O3 results in heterochromatic optical emission, which affords the resulting PUFs with a multilevel encoding capacity of 44096 at 64 × 64 pixels. The wide bandgap (∼4.6 eV) of β-Ga2O3:Dy3+ confines the PUF response to solar-blind irradiation, encompassing a light spectrum in the range 230–270 nm, which does not overlap with ambient light, ensuring interference-free stimulation and therefore achieving 100% recognition accuracy. Additionally, the high thermal quenching activation energy (0.386 eV) of β-Ga2O3:Dy3+ provides thermal stability, enabling the PUFs to operate from room temperature up to 125 °C. With near-ideal uniformity, uniqueness, and reproducibility, these PUFs hold considerable promise for practical applications in anticounterfeiting and encryption.
研究领域:
材料科学
·
光学工程
·
信息安全
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Theranostics
·
2019
·
IF 8.063
Xu-Qi Kang,Gao-Feng Shu,Sai-Ping Jiang,Xiao-Lin Xu,Jing Qi,Fei-Yang Jin,Di Liu,Yong-Hong Xiao,Xiao-Yang Lu,Yong-Zhong Du
The prevalence of antibiotic resistance and lack of alternative drugs have posed an increasing threat to public health. Here, we prepared β-Ga 2 O 3 :Cr 3+ nanoparticles modified with ICAM1-antibody-conjugated TPGS (I-TPGS/Ga 2 O 3 ) as a novel antibiotic carrier for the treatment of drug-resistant infections. Methods : I-TPGS/Ga 2 O 3 were firstly characterized by measuring particle size, morphology, crystal structure, drug loading capacity, and in vitro drug release behaviors. The in vitro antibacterial activities of I-TPGS/Ga 2 O 3 /TIG were evaluated using standard and drug-resistant bacteria. The internalization of I-TPGS/Ga 2 O 3 was observed by fluorescence confocal imaging, and the expression levels of the efflux pump genes of TRKP were analyzed by real-time RT-PCR. In vitro cellular uptake and in vivo biodistribution study were performed to investigate the targeting specificity of I-TPGS/Ga 2 O 3 using HUEVC and acute pneumonia mice, respectively. The in vivo anti-infective efficacy and biosafety of I-TPGS/Ga 2 O 3 /TIG were finally evaluated using acute pneumonia mice. Results : It was found that TPGS could down-regulate the over-expression of the efflux pump genes, thus decreasing the efflux pump activity of bacteria. I-TPGS/Ga 2 O 3 with small particle size and uniform distribution facilitated their internalization in bacteria, and the TPGS modification resulted in a significant reduction in the efflux of loaded antibiotics. These properties rendered the encapsulated tigecycline to exert a stronger antibacterial activity both in vitro and in vivo . Additionally, targeted delivery of I-TPGS/Ga 2 O 3 mediated by ICAM1 antibodies contributed to a safe and effective therapy. Conclusion : It is of great value to apply I-TPGS/Ga 2 O 3 as a novel and effective antibiotic delivery system for the treatment of drug-resistant infections.
研究领域:
药学
·
生物医学工程
·
微生物学
✓ 已验证
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Zeyulin Zhang,Dinghe Liu,Yiru Yan,Liru Zeng,Hao Chen,Qingwen Song,Dazheng Chen,Chunxiang Zhu,Chunfu Zhang,Yuming Zhang,Yue Hao
Gallium oxide (Ga 2 O 3 ) film exhibiting the solar-blind absorption cutoff characteristic holds considerable potential for application in UV photodetectors . The material defects in the device will introduce the recombination region for the photodetector, especially at the interface of the Ga₂O₃ heterojunction . The photogenerated carriers , generated within the Ga 2 O 3 film, will inevitably be influenced by these high recombination centers during their transportation. Avoiding or minimizing this region can improve the performance of the photodetector. The p-n junction, with its depletion region , generates an electric field that drives the carriers away from the recombination region. However, due to the Ga 2 O 3 p-type doping difficulty, our work focuses on the growth of single-crystal NiO/β-Ga₂O₃ films by Mist-CVD and the fabrication of field-controlled photodetectors. The hole concentration in the NiO film is adjusted by doping with different concentrations of Li⁺. Compared with a photodetector without the NiO interlayer, the performance of the photodetector with the structure of NiO (1 % Li⁺-doped)/β-Ga₂O₃ exhibits a significant improvement, which achieved the maximum responsivity of 1002.5 A/W, and a high peak detectivity of 3.31 × 10 15 Jones.
研究领域:
半导体物理
·
光电材料
·
凝聚态物理
·
薄膜器件
·
紫外探测技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2020
·Vol. 9
·期 1
·349-357
·
IF 11.301
Wei Ping Wang,Le Xin Song,Yao Li,Yue Teng,Juan Xia,Fang Wang,Nan Ning Liu
Here we report a novel synthesis of hollow high-quality β-Ga2O3 nanorings based on an interesting structural evolution from concave Ga-MOF nanodisks. The concave low-crystallinity nanodisks were constructed by non-classical crystallization with particle attachment aid. Further, we propose the evolution mechanism from the Ga-MOF nanostructure to the gallium oxide nanostructure based on the outward contraction of nanoparticles. This synthesis method is highly straightforward and provides high yields. It is important to note that the β-Ga2O3 nanorings exhibit good heterogeneous catalytic activity for epoxidation of alkenes. A new oxygen transfer pathway was illustrated to describe the catalytic process based on density functional theory.
研究领域:
材料科学
·
催化化学
·
理论化学
✓ 已验证
DOI
高影响因子
Acta Biomaterialia
·
2015
·
IF 6.025
Xin-Shi Wang,Jun-Qing Situ,Xiao-Ying Ying,Hui Chen,Hua-fei Pan,Yi Jin,Yong-Zhong Du
Multifunctional nanoparticles which integrate the therapeutic agents and bio-imaging agents into one carrier are emerging as a promising therapeutic platform. Herein, GaOOH:Cr 3+ was firstly synthesized using improved hydrothermal method (atmospheric pressure, 95 °C), and by manipulating the pH of the reaction medium, GaOOH:Cr 3+ with different sizes (125.70 nm, 200.60 nm and 313.90 nm) were synthesized. Then β-Ga 2 O 3 :Cr 3+ nanoparticles with porous structures were developed as a result of the calcination of GaOOH:Cr 3+ . The fabricated, porous β-Ga 2 O 3 :Cr 3+ nanoparticles could effectively absorb doxorubicin hydrochloride (DOX) (loading rate: 8% approximately) and had near infrared photoluminescence with a 695 nm emission. Furthermore, β-Ga 2 O 3 :Cr 3+ nanoparticles were coated with l -Cys modified hyaluronic acid (HA-Cys) by exploiting the electrostatic interaction and the cross-link effect of disulfide bond to improve the stability. The DOX loaded HA-Cys coated β-Ga 2 O 3 :Cr 3+ nanoparticles (HA/β-Ga 2 O 3 :Cr 3+ /DOX) showed an oxidation–reduction sensitive drug release behavior. The HA-Cys coated β-Ga 2 O 3 :Cr 3+ nanoparticles showed a low cytotoxicity on MCF-7 and Hela cell lines. The cellular uptake of HA/β-Ga 2 O 3 :Cr 3+ /DOX using the near infrared photoluminescence of β-Ga 2 O 3 :Cr 3+ nanoparticles and the fluorescence of DOX demonstrated the HA/β-Ga 2 O 3 :Cr 3+ /DOX could internalize into tumor cells quickly, which was affected by the size and shape of β-Ga 2 O 3 :Cr 3+ nanoparticles.
研究领域:
材料科学
·
生物医学工程
·
药学
✓ 已验证
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）