ADVANCED FUNCTIONAL MATERIALS
·
2026
·Vol. 36
·期 60
·e76784
·
IF 19.9
Xinyue Chen,Fangxin Zou,Junxiao Mu,Chen Zhuo,Yankai Bo,Zengshuo Liu,Siyuan Dong,Cheng Liu,Yousi Chen,Zhihuan Weng,Jia-Zhuang Xu,Zhong-Ming Li,Shouhai Zhang,Xigao Jian,Hailong Li
Thermo-acoustic insulation aerogels have received increasing attention in the aerospace sector. However, fabricating superstrong thermo-acoustic insulation aerogels via a green and efficient method remains a significant challenge. Herein, superstrong polyethersulfone (PES) aerogels are successfully fabricated via a novel and efficient strategy, integrating freeze casting, etching with water, and mild ambient pressure drying (APD), which involves no extra organic solvents. By tuning the PES concentration, PES aerogels with different morphologies and microstructures are tailored, enabling a tunable property spectrum to meet diverse application needs. Specifically, the 11 wt.% PES demonstrates an exceptional axial compression modulus (36.4 MPa), making it ideal for load-bearing components in aerospace systems. In contrast, the 9 wt.% PES achieves an enhanced acoustic performance (NRC = 0.41), underscoring its potential for construction application. Besides, all PES aerogels maintain low thermal conductivity (0.0397–0.0569 W/(m·K) in the axial direction) and self-extinguishing behavior. Notably, the PES aerogels are fully recyclable, which presents an opportunity to establish a sustainable circular economy. And last but not least, this fabrication strategy is universal and applicable to other engineering plastics. This work establishes a green, cost-effective and scalable pathway to fabricate superstrong thermo-acoustic insulating polymer aerogels, overcoming a key bottleneck toward their industrial adoption.
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高影响因子
Nanomaterials
·
2026
·Vol. 16
·期 14
·861
·
IF 4.8
Bing Yang,Qiao Guo,Hongmin Li,Gang He,Shanshan Jiang,Longwei He,Xiang Li,Peng Yu
In this work, a post-annealing rapid cooling and aging treatment process is innovatively proposed to build high-performance zinc tin oxide (ZTO) thin-film transistors. The relaxation effect on the abundant oversaturated oxygen vacancy deep-level traps contributes to the shallow donor formation during the aging period. The TFTs aged in an air environment for 10 days possess significantly improved electrical performance, including a clearly increased on/off current ratio of 7 × 106from 2 × 104and a markedly increased saturation mobility of 5.9 from 2.2 cm2·V−1·s−1, verifying the facile method to improve the electrical property of polycrystalline TFTs, and the method has been investigated using the grain boundary defect relaxation model and energy band theory. It is worth mentioning that the TFTs aged under vacuum conditions realized more effective regulation and control on off-state current and demonstrated a wider aging time window. The distinctive illumination interface stability was studied in depth using a charge trapping model and electron–hole pair model, which embody the potential application in photoelectric detectors.
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高影响因子
Advanced Science
·
2026
·
IF 14.1
Yixiong Ji,Wentong Yang,Di Yan,Wei Luo,Jialu Li,Shi Tang,Jintao Fu,James Bullock,Mei Gao,Xin Li,Zhancheng Li,Jun Yang,Zhenghong Xiong,Yang Peng,Pengjun Zhao,Xingzhan Wei,Haofei Shi,Paul Mulvaney,Fangyang Liu
Flexible kesterite Cu 2 ZnSn (S,Se) (CZTSSe) solar cells on metal foils are attractive for lightweight and conformable photovoltaic applications, yet their efficiencies remain significantly lower than those of rigid devices due to severe foil‐induced rear‐interface losses during high‐temperature chalcogenization. These effects include uncontrolled Mo(S,Se) formation, interfacial instability, and the emergence of blocking back‐contact barriers that hinder efficient carrier extraction. Here, we introduce a single‐crystal graphene interlayer to engineer the Mo foil/CZTSSe interface. The atomically thin graphene layer decouples absorber growth from the mechanically and chemically non‐ideal foil surface, suppressing detrimental interfacial reactions and stabilizing the rear interface. As a result, carrier extraction is enhanced, and the back‐contact barrier is reduced toward quasi‐ohmic behavior. Flexible CZTSSe solar cells with graphene‐engineered interfaces achieve a champion efficiency of 11.6% with simultaneous improvements in V OC , J SC , and fill factor. These results highlight rear‐interface stabilization as a key strategy for improving flexible kesterite photovoltaics on metal substrates. An atomically thin graphene interlayer stabilizes the rear interface of flexible CZTSSe solar cells by regulating interfacial stress, suppressing detrimental interfacial reactions, and reducing the back‐contact barrier. This strategy simultaneously improves photovoltaic performance and mechanical durability.
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高影响因子
Journal of Energy Chemistry
·
2026
·
IF 15.6
Yu Mao,Mengyang Wang,Yanmei Deng,Wenjian Chan,Ziyang Ren,Chenyu Zhong,Ening Gu,Mehmet Ali Olgar,Xianzhong Lin,Guowei Yang
Mitigating the open-circuit voltage ( V OC ) deficit caused by non-radiative recombination at the back interface remains a critical challenge for high-performance Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. Conventional passivation using an ultrathin insulating interlayer at the CZTSSe/Mo interface suffers from an inherent trade-off between passivation quality and charge transport. To address this limitation, we introduce a scalable direct-writing inkjet printing technique to construct patterned micro-nano insulator arrays composed of SiO 2 nanoparticles at the back interface. By tailoring the printing parameters to design controllable passivation structures, interface recombination is effectively suppressed while maintaining efficient carrier transport through local openings. As a result, the interface defect density is reduced by 46% and the carrier lifetime is prolonged more than two times. The champion device achieves a remarkable power conversion efficiency (PCE) of 15.03% with an optimal passivation area of 11%. Notably, its V OC deficit is only 253 mV, representing the lowest value among high-performance CZTSSe solar cells. This work provides a novel avenue for interface engineering to suppress non-radiative recombination and demonstrates the potential of inkjet printing technique for advanced contact design in photovoltaics. High-performance CZTSSe solar cell with efficiency exceeding 15% is achieved via back-interface patterned insulator passivation strategy. Optimized back-interface effectively suppresses non-radiative recombination and reduces open-circuit voltage deficits. Download: Download high-res image (154KB) Download: Download full-size image
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RARE METALS
·
2026
·Vol. 45
·期 1
·e70170
·
IF 12.1
Jie Tu,Hangren Li,Xudong Liu,Jiaqi Ding,Siyuan Du,Longyuan Shi,Menglin Li,Yonghui Wu,Pengfei Song,Guoqiang Xi,Yuzhe Yang,Dongxing Zheng,Xiaolong Li,Jianjun Tian,Linxing Zhang
en Double-perovskite multiferroic systems have attracted increasing attention due to their highly tunable structures and chemical adaptability. The uncontrollable performance changes caused by the release of boundary conditions are an important factor hindering the development of freestanding membranes. Here, the freestanding BiSmFe 2 O 6 (BSFO) double-perovskite membranes with a fixed mechanical boundary are proposed, leveraging adaptive chemical modification, a distortion that breaks intrinsic properties, during the boundary creation process. This is attributed to the tendency of film systems with abnormal Poisson deformation to develop chemical strain during the lattice volume change process. We employ electrodynamic decomposition, an approach enabling intact release of wrinkle-free membranes, which enhances the quality of freestanding membranes and the controllability of the mechanical boundary. Compared to the epitaxial films, the freestanding BSFO double-perovskite membranes retain the same ferroelectric origin and lattice parameters, with comparable electrical and optical behaviors, all reflecting the preservation of the about 5.06 GPa chemical strain boundary post-peeling. These findings underscore the effectiveness of adaptive chemical modulation in achieving constant mechanical boundary conditions for strained materials with outstanding performance. 摘要 zh 双钙钛矿多铁体系因其高度可调的结构和优异的化学适配性,已引起学术界的广泛关注。自支撑薄膜的边界条件释放引发的性能不可控变化是制约其发展的关键因素。本文提出一种通过自适应化学调控策略制备具有固定机械边界的自支撑BiSmFe 2 O 6 (BSFO)双钙钛矿薄膜的方法,该策略可有效抑制边界构建过程中因结构畸变导致的本征性能改变。这一现象源于,在具有反常泊松形变特性的薄膜体系中,晶格体积变化易形成化学应变的内在趋势。研究采用电动力学分解技术,实现了无褶皱双钙钛矿薄膜的完整剥离,显著提升了自支撑薄膜的品质与机械边界的可控性。与外延薄膜相比,所制备的自支撑BSFO 双钙钛矿薄膜不仅保留了相同的铁电起源与晶格参数,其电学及光学性能亦具有良好的一致性,这一结果证实剥离后薄膜仍维持约 5.06 GPa 的化学应变边界。本研究为实现应变功能材料的恒定机械边界调控及优异性能保留提供了有效的自适应化学调控路径,具有重要的应用前景。
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高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2026
·
IF 19.9
Xiaoxuan Qu,Yifeng Du,Chengzhuan Gong,Jinming Guo,Xuebin Zhu,Bingbing Yang
Antiferroelectrics are promising for high-energy-density storage owing to their characteristic double hysteresis loops. However, their performance is severely limited by their antiferroelectricity instability, low breakdown strength, and high hysteretic loss. This study proposes a performance optimization strategy based on polymorphic polar order engineering. By the introduction of LaScO 3 nonpolar end-member into antiferroelectric PbHfO 3 , the long-range antipolar orders were disrupted and thus establish a polymorphic polar configuration, combining short-range antipolar orders and disordered nonpolar regions. This structure, directly observed via atomic-scale scanning transmission electron microscopy, simultaneously delays the antiferroelectric-ferroelectric phase transition field, depresses the field-induced hysteretic loss, and improves the breakdown field. Consequently, the optimized polymorphic PbHfO 3 −based relaxor antiferroelectric achieves a high energy density of 100.3 J cm − 3 and efficiency of 76.3%, rivaling the advanced antiferroelectrics. Moreover, the films demonstrate exceptional stability under a broad temperature (−100°C to 200°C) and frequency (1–100 kHz) ranges, as well as extended cycling (up to 10 8 cycles). This work not only elucidates the microscopic mechanism of polymorphic polar order in optimizing antiferroelectric energy storage performance but also provides a novel design strategy for antiferroelectrics that integrates high energy density, high efficiency, and superior reliability.
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ACS Photonics
·
2026
·
IF 6.7
Xing Li,Jixiang Tang,Rui Jia,Xinhua Wang,Chang Chang,Huifeng Chang,Xiao Tian,Mingpeng Zhang,Jiawang Chen,Chengjian Lin,Guangda Niu,Molang Cai
Semiconductor radiation detectors are essential in high-energy physics, nuclear physics, and photonics. While conventional silicon detectors are constrained in high-energy X-ray detection by their low atomic number, emerging perovskite detectors face limitations in high-frequency signal detection due to low carrier mobility. Here, we introduce a perovskite-sensitized silicon detector with a tunnel oxide passivated contact (TOPCON) structure that merges the wide-energy-range X-ray detection efficiency of perovskites with the high carrier mobility and effective passivation of silicon TOPCON. The perovskite layer reverses the energy-dependent sensitivity of silicon from decreasing to increasing in the 40 – 80 kVp range. Moreover, the TOPCON design reduces the dark current density to 797.4 nA cm–2 at 100 V (from 1.4 μA cm–2) and shortens rise and fall times to 1.4 and 1.3 ms under 80 kVp X-rays. Most importantly, the device demonstrates the first polycrystalline perovskite-based α-particle spectroscopy (241Am, 5.49 MeV) with 4.1% energy resolution and a response time of ∼250 ns, thereby challenging the conventional requirement for high-quality single crystals in such measurements.
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ACS Applied Materials & Interfaces
·
2026
·
IF 7.8
Rui Tang,Luanxu Zhu,Zihe Wang,Yongming Hu,Yunbin He,Haoxiang Ma,Omer Rauf,Usman Rauf,Qingfeng Zhang
While ferroelectric-enhanced Ga2O3-based self-powered solar-blind ultraviolet photodetectors (SBUVPDs) can offer high-performance detection of 200–280 nm wavelength due to efficient carrier separation, their accuracy is often compromised by the narrow bandgap (<4 eV) of traditional ferroelectric materials, which makes them susceptible to interference from light signals beyond the SBUV region. To address this issue, we developed a narrow-band self-powered SBUVPD based on Hf0.5Zr0.5O2/(Sn0.1Ga0.9)2O3 heterojunction thin films. This device benefits from a strong ferroelectric depolarization field throughout the whole Hf0.5Zr0.5O2 thin film, and a type-II band alignment at the interfaces of Hf0.5Zr0.5O2 and (Sn0.1Ga0.9)2O3, yielding excellent photoresponse performances with a high responsivity of 25.10 mA/W, large detectivity of 4.63 × 1011 Jones, and fast rise/decay time of 201/325 ms at 0 V bias. Crucially, the ultrawide bandgap (5.45 eV) of Hf0.5Zr0.5O2 confines the cutoff wavelength to within 280 nm, ensuring high detection accuracy. The overall performances of this device outperform those of the most recently reported SBUVPDs utilizing Ga2O3 materials, demonstrating that integrating ultrawide-bandgap ferroelectric layers is an effective strategy for creating high-property, narrow-band SBUVPDs.
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高影响因子
Materials
·
2026
·Vol. 19
·期 7
·1337
·
IF 3.7
Xiaogong Lv,Shumin Zhang,Yanchun Yang,Guonan Cui,Wenliang Fan,Xing Yue
Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a candidate thin-film photovoltaic material; however, its performance is restricted by innate defect-induced nonradiative recombination. Low-concentration Ge doping has been identified as an efficient way to mitigate these defects, but the selenization temperature remains an important process parameter that governs the structure and optoelectronic characteristics of CZTSSe absorbers. In the present work, low-concentration Ge-doped Cu 2 ZnSn 0.95 Ge 0.05 S 4 (CZTGS) precursor films were synthesized through a green, n-butylammonium butyrate-based solution approach. The effects of the selenization temperature (530–570 °C) on the microstructure, composition, and photovoltaic performance of Cu 2 ZnSn 0.95 Ge 0.05 (S,Se) 4 (CZTGSSe) films and devices were comprehensively investigated. X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectrometer (EDS), atomic force microscopy (AFM) were performed to comprehensively characterize the synthesized samples, and the results suggested that the selenization temperature dramatically altered the film grain growth, crystallinity, elemental retention and surface roughness. Specifically, the film that underwent selenization at 550 °C presented the best crystallinity, which was accompanied by large-scale even grains, efficient Ge 4+ addition to the kesterite lattice and the lowest surface roughness. These better properties in terms of structure and composition resulted in the lowest carrier transport resistance ( R s = 8.6 Ω∙cm 2 ), improved recombination resistance ( R j = 5.9 kΩ∙cm 2 ), inhibited nonradiative recombination, and prolonged carrier lifetime ( τ EIS = 35.8 μs). Therefore, the resulting CZTGSSe thin-film solar cell had an 8.69% better power conversion efficiency (PCE), while its open-circuit voltage ( V OC ) was 0.42 V, the fill factor (FF) was 55.51%, and the short-circuit current density ( J SC ) was 37.71 mA·cm −2 . Our results elucidate the mechanism by which the selenization temperature regulates low-concentration Ge-doped kesterite devices and provide more insights into the optimization of processes for cost-effective, high-performance, and green thin-film solar cells.
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ACTA PHYSICO-CHIMICA SINICA
·
2026
·
IF 13.5
Jun Wang,Xinxing Li,Yibo Wang,Yafei Mu,Xiaoming Guo,Di Lan,Dashuang Wang,Haifeng Li
The PTFE-rich gated layer enables optimized surface impedance matching and spatial separation of internal dissipation units. • Buried CoO x /CFs interfaces trigger confined charge migration and multi-level polarization. • Porous pathways and discontinuous interfaces coordinate wave entry with internal attenuation. • Spatial partitioning drives full X-band absorption and superior corrosive media barrier. For communication and radar stealth applications, microwave absorbing materials urgently need to achieve efficient attenuation and stable operation within limited thickness. However, while continuous conductive networks or high-load loss phases can enhance attenuation, they are prone to impedance mismatch due to excessively high surface dielectric response; simply using low-polarity polymers for coverage may weaken the internal active interface, making it difficult to coordinate wave entry and energy conversion. To address this, we propose a “fluorocarbon-gating–buried-interface dissipation” strategy to construct polytetrafluoroethylene (PTFE)/poly(vinyl alcohol) (PVA)-based porous composite foams containing short carbon fibers (CFs) and cobalt oxide (CoO x ) domains, hereafter denoted PPCFCs. Following the immobilization of Co 2+ precursors on acidified short carbon fibers, PTFE/PVA foaming, and N 2 /air stepwise thermal reconstruction, the resulting composite exhibits an F-rich surface composition and a low-order carbonaceous matrix containing embedded, locally dispersed CoO x /CFs-related nanocrystalline domains. The fluorocarbon surface helps mitigate impedance abrupt changes at the air/material interface and reduces liquid-phase wetting, while the porous framework extends the propagation path. Internally, non-penetrating CFs microcurrent units and CoO x nanodomains synergistically induce confined charge migration, multi-level polarization relaxation, and auxiliary magnetic response. The optimal PPCFC-3 achieves a minimum reflection loss of −52.61 dB at 2.8 mm and effective X-band coverage at 3.4 mm. Simultaneously, this material exhibits high apparent hydrophobicity and effective barrier against corrosive media penetration. This study provides a spatial partitioning design approach for optimizing porous microwave absorbing materials through the synergistic effect of surface impedance tuning and internal interface dissipation. Co 2+ -loaded CFs were integrated into PTFE/PVA foam and thermally reconstructed into PPCFC-3. Fluorocarbon gating and buried CoO x /CFs interfaces enable X-band absorption, simulated RCS reduction, and electrolyte-barrier potential. Download: Download high-res image (313KB) Download: Download full-size image
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ACS Applied Materials & Interfaces
·
2026
·
IF 7.8
Hong Mingdong,Yang Shengyi,Zou Guanzhen,Liu Mingzhu,Wang Yao,Bai Haoran,Fan Yaoyao,Tao Mengyao,Zou Bingsuo,Jiang Yurong
High-performance infrared photodetection is essential for emerging applications such as optical communication and night vision; however, extending the spectral response range beyond intrinsic bandgap limits remains a significant challenge for traditional crystalline materials. Herein, a facile synthesis of silver sulfide (Ag 2 S) crystalline nanodots (CNDs) and Ag 2 S amorphous nanodots (ANDs) to extend the responsive wavelength beyond the bandgap limits of conventional Ag 2 S colloidal quantum dots (CQDs) is reported. As compared to Ag 2 S-CNDs as the active layer, our dual-band infrared photodetector ITO/ZnO/PbS/Ag 2 S-ANDs/MXene/Au, in which the active layer of Ag 2 S-ANDs is in amorphous nanodots, exhibited dramatically superior performance of 100-fold higher photocurrent under 15.6 mW/cm 2 1550 nm illumination. As a result, a high specific detectivity of 2.32 × 10 13 Jones with a responsivity of 1.05 A/W is obtained from the photodetector ITO/ZnO/PbS/Ag 2 S-ANDs/MXene/Au under 0.2 μW/cm 2 980 nm illumination at 0 V, as well as a high specific detectivity of 4.47 × 10 11 Jones with a responsivity of 0.01 A/W under 8.5 μW/cm 2 1550 nm illumination, showing its higher performance among the top PbS CQD-based photodetectors. Therefore, this work demonstrates that amorphous inorganic nanomaterials offer a highly promising strategy for broadening the detection wavelength range for high-performance photodetectors.
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NATURE MATERIALS
·
2026
·
IF 38
Zhang Bowen,Jiao Menghan,Xu Xiao,Zhou Jiazheng,Wang Jinlin,Guo Tan,Li Yuan,Wang Jingchen,Chen Shudan,Li Yiming,Shi Jiangjian,Wu Huijue,Luo Yanhong,Li Dongmei,Meng Qingbo
Environmentally benign and earth-abundant kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells have advanced rapidly through solution-based processing. However, scaling from laboratory-scale devices to modules remains a major challenge, largely because complex coordination networks in the precursors hinder the formation of uniform large-area films. Here we show that molecular-level regulation of metal–organic coordination can suppress the formation of cross-linked networks in precursor solutions, promoting efficient solvent removal and uniform selenization and crystallization. This coordination-controlled strategy enables the blade coating of highly homogeneous films over 10 cm 2 , realizing certified efficiencies of 14.2% for 1 cm 2 cells and 13.0% for 10.5 cm 2 modules, representing a leap-forward improvement in scalable kesterite photovoltaics. Beyond performance, the provided molecular insights into kesterite solution chemistry facilitate establishing a scalable and low-cost route towards industrial deployment of this thin-film solar technology.
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危险品化学品经营许可证（带存储）