Surfaces and Interfaces
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2025
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IF 6.3
Guohua Fan,Jinke Song,Yanan Tang,Xiaoting Song,Yao Liu
Dielectric modulation is arresting in electrical and electronic fields, and high- k is particularly important in applications like energy conversion and pulse power supply. Herein, an innovative strategy that different from conventional practices was adopted to boost the dielectric constant of PVDF-based dielectrics via involving an epsilon-negative layer in the laminates. The epsilon-negative layer was obtained based on the plasmonic state in percolating graphene networks. After stacking with the epsilon-positive layer containing core-shell BaTiO 3 @SiO 2 fillers, dielectric constant of the laminated composites was improved, and it increased constantly with the increasing thickness ratio of the epsilon-negative layer. It's ascertained the boost in dielectric constant was related to the multiple interfacial polarizations inside the layered composites, and the dielectric loss was suppressed by the low loss epsilon-positive layer. Therefore, synergism of epsilon-negative and positive layers in the enhancement of dielectric performance was elucidated, which developed a new avenue to obtain high- k dielectrics by the means of laminated composites.
研究领域:
材料科学
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电气工程
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DOI
高影响因子
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
·
2023
·Vol. 220
·期 9
·2200903
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IF 2
Haotian Cai,Kamale Tuokedaerhan,Zhenchuan Lu,Hongguo Du,Renjia Zhang
Herein, zirconia thin films are successfully prepared on silicon substrates using the sol–gel method, and the microstructure, optical, and electrical properties of zirconia high- k gate dielectric films are analyzed at different annealing temperatures. X-ray diffraction results show that ZrO 2 films crystallize above 500 °C and the grain size increases with the increase of annealing temperature; X-ray photoelectron spectroscopy analysis confirms that metal–oxygen bonds can be effectively formed and defects in the films are eliminated by annealing treatment, with significant changes in the valence band shift (Δ E v ) and conduction band shift (Δ E c ) with increasing annealing temperature. Analysis of the optical properties of the films by UV-Vis confirms that all zirconia films have high transmittance, with the bandgap increasing from 5.54 to 5.74 eV with increasing annealing temperature. Atomic force microscope and field emission scanning electron microscope show that the film quality is better and the root mean square roughness of the zirconia films increases from 0.551 to 1.190 nm and the film thickness decreases from 176.19 to 58.73 nm with increasing annealing temperature. Electrical performance tests show that proper annealing is effective in improving electrical properties, such as obtaining a larger dielectric constant ( k ) and a lower leakage current density.
研究领域:
材料科学
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电子工程
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
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IF 8.3
Enzi Chen,Qing Zhu,Yaoyu Duan,Junhao Tang,Runze Zhan,Jingwen Huang,Xi Wan,Kun Chen,Shaozhi Deng
Integrating high-quality dielectrics with two-dimensional (2D) transition metal chalcogenides (TMDCs) is crucial for high-performance electronics. However, the lack of dangling bonds on 2D material surfaces complicates direct dielectric deposition. We propose using atomic layer deposition (ALD) to integrate ultrathin high-κ dielectric directly on 1T′-MoTe2 surfaces, facilitating the creation of high-performance back-gated field-effect transistors (FETs). Exploiting 1T′-MoTe2’s natural oxidation in ambient conditions, we directly deposit dense and uniform HfO2 dielectric films below 5 nm, achieving an equivalent oxide thickness (EOT) of 0.97 nm. The resulting back-gate transistors, with a monolayer MoSSe on HfO2/1T′-MoTe2, show a current on/off ratio over 105 and operate at low voltages (<1 V), indicating high gating efficiency and a charge carrier mobility of 2.93 cm2V–1s–1. Additionally, we demonstrate a 6 × 5 bottom-gated array of MoSSe transistors using all-1T′-MoTe2 electrodes, achieving an 86.7% sample yield. Our approach also enables the creation of various integrated logic circuits such as inverters, NAND, and NOR gates. This research offers a feasible method for integrating high-κ dielectric films using industrially compatible ALD processes, providing excellent thickness control, uniformity, and scalability for 2D electronic devices.
研究领域:
材料科学
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电子工程
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产品关联
DOI
PubMed
高影响因子
Journal of Materials Research and Technology-JMR&T
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2024
·
IF 6.2
Xiaoting Song,Guohua Fan,Zidong zhang,Jun Wang,Yao Liu,Runhua Fan
The polymer composites with significantly higher permittivity and low loss tangent are vital for the advancement of advanced energy storage capacitors. However, the pursuit of elevated permittivity often comes at the cost of increased loss, imposing limitations on practical applications. In this work, we propose a novel approach of multi-layer composites, comprising positive and negative-ε′ layers. We systematically examine the influence of the relative positioning of single layers within 2-, 3-, and 5-layers structure, as well as the thickness ratio between the positive and negative permittivity layers, to unlock the potential for simultaneously achieving high permittivity, low loss, and moderate energy density. In a remarkable observation, the spatial stacking arrangement of a 5-layer composite (97679) exhibits a substantial increase in permittivity, achieving an impressive 847 as the thickness ratio reached to 1:1:20:1:1. This enhancement represents a remarkable 176-fold increase in permittivity and a one-order-of-magnitude reduction in dielectric loss compared to pristine PI matrix (ε' ≈ 4.8, tanδ ≈ 0.012 at 10 kHz). The 5-layer composite with the content of 97679 demonstrates an enhanced energy density (U d ) of up to 2.49 J/cm³ while concurrently exhibiting an exceptional efficiency (η) of 93.8%. The underlying mechanism responsible for these excellent properties presents that the BDS is influenced by the positioning of the positive-ε′ layer, and the dielectric constant is primarily governed by the arrangement of negative-ε′ layer. The strategic modulation of a multi-layer structure with positive and negative permittivity layers opens a novel design for enhancing energy storage density and tailoring dielectric performances.
研究领域:
材料科学
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能源存储
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DOI
高影响因子
NANOTECHNOLOGY
·
2021
·Vol. 32
·期 21
·215202
·
IF 3.874
Guandong Wang,Daiming Liu,Shuangqing Fan,Zhaoyang Li,Jie Su
In this work, high-dielectric-constant (high-k) erbium oxide（Er2O3）film is fabricated using the spin coating method, and annealed at a series of temperatures (from 400 °C to 700 °C). The effect of annealing temperature on the microstructural and electrical properties of Er2O3 nanofilm is investigated. To demonstrate the applicability of the Er2O3 film, the indium oxide (In2O3) thin film transistor (TFT)-based amorphous Er2O3 dielectric film is fabricated at different temperatures. The TFT-based EO-600 shows a low-operating voltage and good electrical properties. The inverter demonstrates that the Er2O3 nanofilm synthesized by the sol-gel method could be a promising candidate as the dielectric layer in a low-voltage electronic device.
研究领域:
材料科学
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电子工程
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DOI
高影响因子
Advanced Science
·
2025
·
IF 14.1
Jia You,Mingyang Lu,Lamu Dazhen,Mengjie Gao,Ruiyan Zhang,Wendong Li,Fan Lei,Wei Ren,Guangxian Li,Junlong Yang
Flexible pressure sensors have gained attention for their comfort, portability, and potential in long-term pulse monitoring and early cardiovascular disease diagnosis. However, stretching stress during daily activities affects sensor accuracy, causing motion artifacts (MAs) that hinder precise pulse signal detection. To address this challenge, the anti-motion artifact iontronic pressure sensor (S-smooth sensor), featuring a soft-hard stretchable interface with energy dissipation properties is developed. By regulating the local modulus of the encapsulation layer, this structure dissipates stretching stress, achieving an MAs suppression rate of up to 90%, significantly improving pulse signal accuracy and reliability. Additionally, the sensor incorporates a dielectric layer and double electrode layer (EDL) sensing interface, with a low-friction design that ensures high sensitivity (92.76 kPa−¹) and stability, maintaining performance over millions of cycles. The sensor accurately captures heart rate (HR) and pulse peak time differences (Δt) under various finger-bending conditions. When integrated into a portable wireless pulse monitoring system, it shows a heart rate loss rate of only 2.9% during intense physical activity. This approach avoids complex chemical processes and material restrictions, offering a novel solution for motion artifact suppression in sensors, with significant potential for real-time health monitoring and assisted diagnosis.
研究领域:
生物医学工程
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健康监测技术
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DOI
PubMed
高影响因子
Nano Energy
·
2024
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IF 16.8
Jingle Duan,Gang Yue,Honghao Li,Teng Liu,Peng Wang,Wei Yu,Peng Shang,Chuizhou Meng,Shijie Guo
Continuous monitoring of indoor human activities is crucial for the healthcare of elder people or patients. The self-powered noncontact triboelectric nanogenerator (TENG) sensor has been recently developed as a promising noncontact sensing tool with many advantages, but its capability of detecting object motion in a far distance still remains inferior. Herein, by implementing multiple strategies of micro-structuring triboelectric surface, introducing dielectric layer , and using functional nano fillers , we develop a single-electrode-mode noncontact TENG sensor by constructing a triboelectric cobalt nanoporous carbon/Ecoflex nanocomposite layer with microstructured square-loop surface on top of a dielectric copper calcium titanate/Ecoflex nanocomposite layer with colossal permittivity. After in-depth optimization of the material selection, component composition and structure design, the developed sensor with effective electrode area of 6.25 cm 2 can deliver a high output voltage of 29 V at 1 cm, and is capable of detecting motions at an extremely far distance of 6 m. Towards practical applications, the TENG unit for single-motion detection of mouth breathing, human walking, and basketball bouncing are demonstrated. Furthermore, multiple TENG units can be assembled into array to realize the complex trajectory tracking for the use of proximity touch pad, indoor human activity monitoring, and garage car parking. This work for the first time extends the TENG noncontact sensing capability to several meters, which is potential in the proximity motion detection and indoor activity monitoring.
研究领域:
材料科学
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生物医学工程
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传感器技术
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DOI
高影响因子
Polymer Chemistry
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2015
·Vol. 6
·期 19
·3685-3693
·
IF 5.52
Yao Li,He Wang,Chunyu Zhang,Yingchao Zhang,Zhanchen Cui,Donghang Yan,Zuosen Shi
This study describes a general approach to design and synthesize a series of novel high-k polymers containing π-conjugated structures with cyano groups for use as a dielectric layer in organic thin-film transistors (OTFTs). The polymer dielectric films have been evaluated based on surface morphology, dielectric constant, leakage current density and compatibility with organic semiconductors, which can be readily fabricated via solution processes in an ambient atmosphere. The characterization confirms that the π-conjugated structures with cyano groups can provide a high dielectric constant (high-k) and a low electrostatic loss. With these polymer dielectric layers, para-sexiphenyl (p-6P)/vanadyl-phthalocyanine (VOPc) OTFTs exhibit excellent performances with a threshold voltage of −3.22 V, a charge carrier mobility of 0.49 cm2 V−1 s−1, and an on/off current ratio >106.
研究领域:
材料科学
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电子工程
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产品关联
DOI
高影响因子
Polymer Chemistry
·
2016
·Vol. 7
·期 11
·2143-2150
·
IF 5.687
Yao Li,He Wang,Xuesong Wang,Zuosen Shi,Donghang Yan,Zhanchen Cui
In this paper, we report the design, synthesis, and dielectric properties of novel polymers as functional dielectric layers in pentacene thin-film transistors (TFTs) to explore the relationship between the grain size and the charge carrier mobility with a single variable. The polymers were synthesized with a novel monomer, anthracen-10-ylmethyl methacrylate (A-10-YMA), that contained anthracene, which provided a crystal nucleus for the crystallization of pentacene. Increasing the amount of the novel monomer in the polymer structure resulted in a significant decrease in the grain size of the pentacene semiconductor. The result illustrates that pentacene TFTs with a suitable grain size of the pentacene semiconductor exhibit an excellent performance in terms of the charge carrier mobility.
研究领域:
材料科学
·
电子工程
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产品关联
DOI
高影响因子
Nano Energy
·
2023
·
IF 17.6
Wei-Zhi Song,Ting-Ting Zhang,Duo-Shi Zhang,Chang-Long Li,De-Jun Sun,Jun Zhang,Seeram Ramakrishna,Yun-Ze Long
Triboelectric nanogenerators (TENGs) have been extensively studied as harvesting devices for high-entropy energy in the internet of things (IoT) era. However, the mechanism by which the dielectric layer affects the TENG output remains controversial. In this paper, through studying the TENG based on liquid metal (LM) thermoplastic polyurethane (TPU) composite film (LM-TENG), a clear understanding of how the thickness of the dielectric layer affects the output of the TENG is obtained. The resistance-invariant property of the highly stretchable elastic conductor TPU@LM under large strain enables the LM-TENG to work under continuous changes in the thickness of the dielectric layer. The existence of the most suitable thickness of the TENG dielectric layer is demonstrated. The optimum equivalent thickness increased the output power of the LM-TENG by a factor of nine. This result provides important guidance for the structural design of TENGs. Finally, an anti-peeping smart door lock password system based on LM-TENG was successfully designed, demonstrating the great application potential of TENG in the field of smart home .
研究领域:
材料科学
·
能源技术
·
物联网应用
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产品关联
DOI
高影响因子
ORGANIC ELECTRONICS
·
2017
·
IF 3.399
Ziyang Liu,Zhigang Yin,Shan-Ci Chen,Shilei Dai,Jia Huang,Qingdong Zheng
Insulating polymers have been recognized as a promising class of gate dielectrics for organic field-effect transistors (OFETs). However, the relative permittivity of most single polymer dielectrics is quite fixed and too low to afford low-operating voltages of OFETs. For flexible low-voltage OFETs, dielectric tunable polymer composites are highly desirable. Here, a new type of binary polymer composite dielectrics is developed by incorporating a small amount of polyacrylic acid (PAA) into poly(methyl methacrylate) (PMMA) to reduce the operating voltage and enhance the device performance. The resulting dielectric layers deliver a tunable relative permittivity from 3.32 to 4.28 with an increase of PAA contents in the composite. As results, flexible OFETs using PMMA:PAA dielectrics show greatly improved mobility and reduced threshold voltages with a low-operating voltage below −5 V. The OFETs using the composite dielectric also exhibit excellent performance stability during mechanical bending tests with different radii, where the mobility can maintain 95% of its initial value over 5000 cycles under a bending radius of 5 mm. The tunable dielectric properties and high robustness of these novel dielectrics make them promising candidates for solution-processed low-voltage flexible OFETs with low power consumption.
研究领域:
材料科学
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电子工程
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产品关联
DOI
高影响因子
Nano Energy
·
2021
·
IF 17.881
Yan Zheng,Tong Lin,Ning Zhao,Caixiu Huang,Wei Chen,Gi Xue,Yong Wang,Chao Teng,Xiaoliang Wang,Dongshan Zhou
Due to its unique advantages, capacitive electronic skin (E-skin) has shown excellent application potential in robotics, human-computer interaction, and biomedical equipment in recent years. However, the low sensitivity and nonlinear response caused by the classic working mechanism of compressing the microstructured elastic dielectric layer and the low dielectric constant of the elastomer limit practical applications of E-skin. To make the device respond linearly to pressure over a wide range, a new strategy of controlling the contact area between the elastic electrode and the dielectric layer is adopted. This design also reduces signal distortion, which originates from the viscoelasticity of the polymer. Furthermore, by using ferroelectric polymers and ionic gels with high capacitance in the dielectric layer, the sensitivity of the device can be adjusted in the range of 0.644–26.6 kPa −1 , and the lower limit of pressure detection is as low as 2.88 Pa. The performance of the device remains stable even after 8000 cycles of compression. On this basis, the successful application of the linear-response E-skin obtained in this work in physiological signal monitoring and the collection of basic object information, such as shape and hardness, proves the rationality of the design and provides the possibility for capacitive electronic skin to move towards real life applications.
研究领域:
材料科学
·
生物医学工程
·
机器人技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）