RSC Advances
·
2017
·Vol. 7
·期 4
·1936-1942
·
IF 3.108
Chao Chen,Yonggao Jia,Dan Jia,Shuxin Li,Shulin Ji,Changhui Ye
Silver nanowire transparent conductive films have been proposed as a promising candidate to replace indium tin oxide films for electronic applications. Stable ink with a high loading amount of silver nanowires is essential for the scale-up of the production of transparent conductive films considering the storage need due to separated procedures of nanowire synthesis and film formation. It is very hard to re-disperse the nanowires if irreversible aggregation happens during storage for coating. The paradox of stabilizing the concentrated nanowire ink and facile utilizing of the ink for highly conductive films with a low junction resistance at the joint points of organic stabilizer-capped silver nanowires has to be solved. A two-step method has been provided to overcome the difficulty in this work. First, a silver nanowire ink with the loading amount of 5 mg mL−1 is formulated, which is stable for more than three months under normal conditions. The success in maintaining the long-term stability lies in applying an appropriate amount of surfactant and choosing organic solvents with appropriate mixing ratios to strengthen the interaction of the surfactant with the silver nanowires and to decrease the free energy through enthalpy of mixing silver nanowires into the solvent for aggregation prevention. Second, the concentrated ink at any time is simply washed a suitable number of times and diluted to a uniform dispersion for coating of TCFs with excellent optical and electrical performance, having a figure of merit σDC/σOP (ratio of the electrical conductance to optical conductance) as high as 228. The viability of treating silver nanowires in large quantity paves the way for real industrial applications.
研究领域:
材料科学
·
纳米技术
·
电子工程
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DOI
高影响因子
Journal of Materiomics
·
2024
·
IF 8.4
Xusheng Liu,Keli Wang,Peng Li,Qiqi Tang,Zhenlong Huang,Yuan Lin,Wu Wang,Binbin Jiang,Jiaqing He
Entropy engineering has emerged as an effective strategy for improving the figure-of-merit zT by decelerating the phonon transport while maintaining good electrical transport properties of thermoelectric materials. Herein, a high average zT of 1.54 and a maximum zT of 2.1 are achieved in the mid-entropy GeTe constructed by Ag, Sb, and Pb alloying. At room temperature, the mid-entropy GeTe tends to be a cubic structure. And the power factor is improved from 7.7 μW·cm −1 ·K −2 to 16.2 μW·cm −1 ·K −2 due to the large increase in effective mass and the optimized carrier concentration. The increasing disorder created by heavy and off-centering Ag, Sb, and Pb atoms induces strong mass/strain fluctuations and phonon scattering to decelerate the phonon transport in GeTe. A low lattice thermal conductivity is obtained in the medium-entropy GeTe-based material. Moreover, a GeTe-based thermoelectric cooler is fabricated with the cooling temperature difference of 66.6 K with the hot end fixed at 363 K. This work reveals the effectiveness of entropy engineering in improving the average zT in GeTe and shows potential application of GeTe as a thermoelectric cooler.
研究领域:
材料科学
·
热电材料研究
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DOI
高影响因子
RSC Advances
·
2014
·Vol. 4
·期 93
·51558-51568
·
IF 3.708
Fangzhuan Liu,Lingyu Wang,Qinjian Yin,Bo Jiang
In the present work, the conductive nanocomposite of poly(p-phenylenediamine)(PpPD)/exfoliated graphene nanoplatelets (GNPs) are synthesized via in situ polymerization under acidic conditions by doping different percentages of GNPs. The interactions between PpPD and GNPs are investigated by utilizing infrared spectra (FTIR), transmission electron microscopy (TEM), scanning electron microscopy (SEM), UV-visible, Raman spectra, thermogravimetric analysis (TGA) and X-ray diffraction (XRD). It is observed that the reticular strip-like PpPD are adsorbed on the surface of the GNPs, which can be fabricated by loading different percentages of GNPs. Thermoelectric properties (electrical conductivity, Seebeck coefficient and thermal conductivity) of pellets obtained by cold pressing are determined at room temperature. Compared with pure PpPD, it is observed that the presence of GNPs is an essential component for the improvement of the thermoelectric properties of the resulting nanocomposite, which reach the maximum of 193.245 S m−1 and 58 μV K−1, while the thermal conductivity of the composites relatively maintains low values even with high GNPs content, resulting in the increase in the dimensionless figure of merit (ZT). The highest ZT value of 3.63 × 10−4 has been obtained for the composite containing 50 wt% GNPs at 55 °C.
研究领域:
材料科学
·
物理化学
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DOI
高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2025
·Vol. 46
·期 2
·117772
·
IF 6.2
Jingdan Lei,Chunhui Wang,Xiaoyun Yang,Xiwei Zhang,Di Yuan,Xu-Jin Ge,Shike Zhang,Gui Yang,Chao Wang
AgCuTe has attracted significant interest due to their superior electrical and thermal transport characteristics. In this work, we focuses on investigating the effects of Se and S solid solution on AgCuTe thermoelectric properties. A series of AgCu(Te, Se, S) solid solutions were synthesized via melting reaction. We found these compositions effectively inhibited the typical hexagonal-to-cubic phase transition and showed features of secondary phase segregation, such as Ag 2 Te, Cu 2 Te, and Cu 2 S. These nano- to microscale chemistry fluctuations significantly affect the thermoelectric transport properties, particularly thermal transport, resulting in an exceptional low lattice thermal conductivity of 0.19 W m −1 K −1 , which was approaching the amorphous limits. Consequently, a maximum figure of merit zT up to 1.4 was obtained at 723 K for AgCuTe 0.65 Se 0.1 S 0.25 sample. This work investigates the relationships between composition, structure, and thermoelectric properties of AgCuTe, providing substantial support for the further development of high-performance AgCuTe-based materials.
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产品关联
DOI
高影响因子
OPTICS AND LASER TECHNOLOGY
·
2025
·
IF 5
Zhuo-Yu Jin,Chu Cao,Nuerguli Kari,Dian-Yun Zhang,Qi Wang
Surface plasmon resonance (SPR) sensors are currently applied in various fields, driving the development of precise detection technologies. However, few designs effectively balance ease of fabrication, high detection performance, and structural stability. To address this challenge, we developed an SPR sensor with a sapphire prism-Au/Gallium Nitride (GaN)/Au composite film structure. The GaN thin film enhances sensitivity, while the coupling between the dual Au layers and sapphire reduces the full width at half maximum (FWHM) and improves sensor stability. Simulation results indicate a significant increase in the electric field intensity at the sensor surface. Experimental results demonstrate that the structure exhibits excellent long-term stability. Compared with conventional Au film sapphire prism SPR sensors, this design achieves a 3.14-fold increase in sensitivity and a 5.43-fold improvement in the figure of merit (FOM). This study presents a novel approach to further enhancing SPR sensor performance and highlights the potential applications of this structure in detection technologies.
研究领域:
光学传感
·
材料科学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Hengpei Su,Tianyue Xu,Tiezhu Guo,Shuhong Nie,Wenya Xu,Xinzhou Wu,Wenming Su,Chuanfang Zhang
Developing an advanced transparent conductive electrode (TCE) as a substitute for the fragile and high-cost indium tin oxide (ITO) is the top priority in the coming smart electronics era. Although two-dimensional transition metal carbides and nitrides (MXenes) have revealed great potential in the competition, the figure of merits (FoMe, defined as the ratio of direct current conductivity to optical conductivity) of reported MXenes TCEs are far below the minimum industrial requirement. Herein, we report on the breaking of FoMe limitation by a hybrid nanoimprint-blading technique to construct embedded MXene grids, where the fine slot channels are filled with MXene flakes and the space beyond is left empty, allowing more visible light to pass through, thus substantially improving the transmittance. Such a strategy decouples the correlation between transmittance and sheet resistance and achieves their individual regulation. As a result, we obtain an ultrahigh FoMe (∼84) surpassing most of other nonmetal TCEs and even being competitive to ITO. We demonstrate the application of MXene grid TCE in the electrochromic device, showing satisfactory switching time and excellent stability (>38,000 cycles). This work opens vast opportunities for MXenes to construct advanced flexible electronics for industrial applications.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Carbon Energy
·
2024
·Vol. 6
·期 8
·e541
·
IF 19.5
Zhuang-Hao Zheng,Yi-Ming Zhong,Yi-Liu Li,Mohammad Nisar,Adil Mansoor,Fu Li,Shuo Chen,Guang-Xing Liang,Ping Fan,Dongyan Xu,Meng Wei,Yue-Xing Chen
Use of a flexible thermoelectric source is a feasible approach to realizing self-powered wearable electronics and the Internet of Things. Inorganic thin films are promising candidates for fabricating flexible power supply, but obtaining high-thermoelectric-performance thin films remains a big challenge. In the present work, a p -type Bi x Sb 2− x Te 3 thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility (less than 5% increase in resistance after 1000 cycles of bending at a radius of ∼5 mm). The favorable comprehensive performance of the Bi x Sb 2− x Te 3 flexible thin film is due to its excellent crystallinity, optimized carrier concentration, and low elastic modulus, which have been verified by experiments and theoretical calculations. Further, a flexible device is fabricated using the prepared p -type Bi x Sb 2− x Te 3 and n -type Ag 2 Se thin films. Consequently, an outstanding power density of ∼1028 μW cm −2 is achieved at a temperature difference of 25 K. This work extends a novel concept to the fabrication of high-performance flexible thin films and devices for wearable energy harvesting.
研究领域:
材料科学
·
纳米科技
·
凝聚态物理
·
能源材料
·
柔性电子学
✓ 已验证
DOI
高影响因子
CARBON
·
2022
·
IF 11.307
Jianglin Diao,Jia Yuan,Zhihao Cai,Lun Xia,Zheng Cheng,Xiaoyan Liu,Wenle Ma,Shufang Wang,Yi Huang
High-performance electromagnetic interference (EMI) materials with remarkable thermoelectric conversion/self-powered capabilities seem to be predictably imperative to eliminate electromagnetic wave pollution and reduce local overheating of devices to ensure the reliable operation of electronic instruments and wearable electronic devices. Herein, multifunctional Bi 2 Te 2.7 Se 0.3 /Ti 3 C 2 T x (BTS/MXene) composites are fabricated by mixing BTS and MXene dispersion followed by vacuum-assisted filtration and hot pressing, which exhibit highest EMI shielding efficiency (EMI SE) of 94.33 dB and average EMI SE of 83.4 dB over the whole X band (BTS/MX-30, containing 30 wt% MXene). Meanwhile, the BTS/MXene composites also demonstrate impressive thermoelectric (TE) conversion capabilities, achieving a peak dimensionless figure of merit (ZT) of 1.2 from 313 to 498 K for BTS/MX-1.5 (involving 1.5 wt% MXene). The excellent electromagnetic wave shielding performances originate from the reflection caused by the impedance mismatch, the multiple scattering at the BTS/MXene interface, the polarization at the terminal of MXene and BTS, etc. On the other hand, the excellent thermoelectric performance of BTS/MXene comes from the high conductivity of MXene and the blocking of low-energy carriers and the scattering of phonons at the interface. Hence, multifunctional BTS/MXene composites display broad prospects for simultaneous implementation of EMI shielding and thermoelectric conversion/self-powered applications in miniature and wearable electronic instruments.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
RARE METALS
·
2025
·Vol. 44
·期 5
·3339-3350
·
IF 11
Wang Wen-Ying,Zhu Jun-Liang,Bo Lin,Zhou Wen-Ying,Liu Xing-Shuo,Li Chang-Cun,Zhang Zheng,Zhao De-Gang
The rock-salt cubic SnSe compound with multiple valleys and inherent low thermal conductivity is considered to be a promising thermoelectric compound. In this study, heterogeneous Pb atoms were strategically introduced into the lattice of cubic SnSe matrix, synergistically adjusting the thermoelectric transport properties of samples by optimizing hole carrier concentration ( n ) and suppressing thermal conductivity ( κ tot ). When the doping content reached 0.08 mol, the peak power factor (PF) at 300 K increased to 20.00 μW·cm –1 ·K –2 . The growing internal microstrain induced by the differences in atomic size strengthened the phonon scattering and effectively reduced the lattice thermal conductivity ( κ L ). With further decoupling of the electrical and thermal transport properties, a peak thermoelectric figure of merit ( ZT ) of 0.82 and an average ZT of 0.42 (300–750 K) were achieved in the samples doped with 0.10 mol Pb. These findings highlight the effectiveness of the selected dopants and demonstrate their synergy in improving the performance of thermoelectric materials. Graphical
研究领域:
材料科学
·
凝聚态物理
·
能源材料
·
热电转换
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
SCRIPTA MATERIALIA
·
2019
·
IF 4.539
Jun Guo,Peng Qin,Zheng Ma,Qiong-Lian Yang,Jing Feng,Zhen-Hua Ge
A new approach was developed for enhancing the thermoelectric performance of In 2 O 3 (ZnO) 5 ceramics. Ni coating layer on the surface of In 2 O 3 (ZnO) 5 powders was prepared by chemical plating. The Ni-Coated In 2 O 3 (ZnO) 5 powders was densified to composite bulk with Ni enrichment in the grain boundaries. The composite sample obtained a remarkably enhanced dimensionless thermoelectric figure of merit (ZT) of 0.39 at 973 K, which is 3.6 times higher than that of a pristine In 2 O 3 (ZnO) 5 sample.
研究领域:
材料科学
·
凝聚态物理
·
功能陶瓷
·
热电材料
·
纳米复合材料
✓ 已验证
DOI
高影响因子
Small
·
2025
·Vol. 21
·期 27
·2412833
·
IF 12.1
Deshang Xiang,Yaru Gong,Chen Chen,Rongxin Sun,Song Zhao,Yuqi Liu,Qingyang Jian,Yanan Li,Wei Dou,Di Li,Pan Ying,Guodong Tang
PbSe has garnered significant attention due to its earth-abundance and low cost of Se element. Here the synthesis of Zn and Sn co-doped n -type PbSe with noteworthy thermoelectric performance enhancement is reported. Microstructural characterization and first-principles calculations demonstrate that Zn occupies the interstitial site between Se tetrahedra in PbSe, thereby creating a high-density network of needle-like defects that induces lattice strain and reduces the lattice thermal conductivity. Zn interstitial doping provides additional free electrons, leading to sharp increase of carrier concentration. DFT calculation reveals that orbital splitting of VBM boosts carrier mobility of PbSe. The significantly enhanced carrier mobility produces high power factor in the whole temperature range. As a result, a high peak ZT of 1.7 is realized for Zn and Sn co-doped n -type PbSe with a remarkable average ZT of 1.2 over the temperature range of 423–873K. These findings demonstrate that combining orbital splitting and interstitial doping is an effective strategy to synergistically optimize the electrical-thermal transport of n -type PbSe, making it a promising candidate for energy conversion applications.
研究领域:
材料科学
·
凝聚态物理
·
能源材料
·
热电转换
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2019
·
IF 4.175
Siqi Wang,Zhi Yang,Yuejun Sun,Yu Xiao,Li-Dong Zhao
PbTe-based thermoelectric materials are considered to be a medium-temperature thermoelectric candidates and the high-performance n -type PbTe is urgently to be developed to match its p -type counterpart on account of practical application. Herein, we firstly optimized the carrier density of n -type PbTe through Sb doping, and obtained a maximum ZT value of ∼1.0. Then, based on the optimized carrier density, we introduced ternary compounds AgSb(Se, Te) 2 to suppress the lattice thermal conductivity . Minimum lattice thermal conductivity of n -type PbTe was reduced as low as ∼0.53 W m −1 K −1 and ∼0.62 Wm −1 K −1 through introducing AgSbSe 2 and AgSbTe 2 , respectively. Combining the maintained electrical properties with suppressed thermal conductivity , maximum ZT values ∼1.2 and ∼1.3 were obtained in PbTe+2%AgSbSe 2 and PbTe+2%AgSbTe 2 , respectively. This work provides an effective strategy of synergistically balancing charge and phonon transports in n -type PbTe with ternary AgSb(Se, Te) 2 compounds.
研究领域:
材料科学
·
热电转换
·
凝聚态物理
·
半导体物理
·
功能材料
·
能量转换材料
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）