Crystals
·
2022
·Vol. 12
·期 3
·405
·
IF 2.67
Yun Liu,Binbin Huang,Xiaoyang Chen,Ping Yu
Mg2TiO4-doped Ca0.65Sr0.35Zr0.65Ti0.35O3(CSZT) thin films with different Mg2TiO4concentrations were deposited on the LaNiO3(LNO)/p-Si substrate using radio-frequency magnetron sputtering technology. The dielectric response of the prepared x% Mg2TiO4-CSZT thin films with frequency, voltage, and temperature was systematically studied. The tanδ and leakage current density of CSZT thin films were reduced effectively by introducing Mg2TiO4content. The prepared 6% Mg2TiO4-CSZT thin film, due to its low loss (tanδ ~0.01 at 1 MHz), satisfied temperature stability (TCC ~−68 ppm/°C, from −55 °C to 205 °C), high withstand voltage (>160 V), and small leakage current density (about 3.34 × 10−6A/cm2at operating voltage of 160 V). This may be useful for capacitor materials in the next generation of portable electronic systems.Keywords:linear dielectric thin films;RF magnetron sputtering
研究领域:
材料科学
·
电子工程
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Shuai Ma,Xiaohua Zhang,Jie Zhang,Xiaohui Zhang,Yu Liu,Chenglong Yu,Zhenxing Yue
Low-loss microwave dielectrics are of significant importance for the miniaturization and integration of microwave devices. In this paper, the ceramics of nominal composition Mgn+1TinO3n+1 (n = 3–6) are synthesized, and the correlations among their phase compositions, defect behaviors, and microwave dielectric properties are systematically investigated. The analyses indicate that the Mgn+1TinO3n+1 ceramics are a biphasic system consisting of hexagonal ilmenite-structured MgTiO3 and cubic spinel-structured Mg2TiO4. The Rietveld refinement results demonstrate that as the n value increases, the content of the MgTiO3 phase gradually increases, while that of the Mg2TiO4 phase decreases. The results of the thermally stimulated depolarization current (TSDC) indicate that the oxygen vacancy-related defects are considered to be the main types of defects in Mgn+1TinO3n+1. As the value of n increases, the increase of the MgTiO3 phases with a more stable crystal structure leads to a gradual decrease in the concentration of oxygen vacancies. The Mgn+1TinO3n+1 ceramics exhibit excellent microwave dielectric properties at n = 6: εr = 17.55, Q × f = 284,600 GHz, and τf = −46.39 ppm/°C. In addition, the relationship between the dielectric constant and the electric field distribution is solved utilizing high-frequency structure simulator (HFSS) software, and the Q × f values are also predicted. The low-frequency dielectric temperature spectra and direct current pulse charge/discharge tests show that the low-loss Mgn+1TinO3n+1 ceramics can be good candidates for microwave capacitors even when operated under high-temperature conditions.
研究领域:
材料科学
·
电子工程
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DOI
PubMed
高影响因子
Advanced Electronic Materials
·
2022
·Vol. 9
·期 1
·2200414
·
IF 7.633
Wen Huang,Tianxiong Ju,Ruipeng Li,Yajun Duan,Yanan Duan,Junji Wei,Lei Zhu
High energy density, high temperature, and low loss dielectric polymers have drawn increasing attention in research owing to their potential applications in power electronic and pulsed power devices. In this study, a new class of organo-soluble dipolar glass polymers (DGPs) are synthesized via polycondensation and post-functionalization of poly(aryl ether)s (PAEs) based on phenolphthalin. Due to the nonplanar backbone structure, the strongly dipolar side groups (-SO 2 CH 3 and -CH 2 CH 2 CN) can easily rotate in these PAEs. As a result, desirable physical properties are obtained: high dielectric constant (4.4–5.6), high glass transition temperature (155–180 °C), good mechanical property, and low dielectric loss (dissipation factor < 0.005). Among them, cyanolized poly(aryl ether nitrile) exhibit the highest discharged energy density of 8.6 J cm −3 at 650 MV m −1 and room temperature with a high discharged efficiency of 94.3%. At 100 °C, cyanolized poly(ether ether ketone) shows the highest discharged energy density of 7.3 J cm −3 at 600 MV m −1 with a discharged efficiency of 91%. Furthermore, these functionalized PAEs exhibit good mechanical toughness with a tensile strength at a break of 60-120 MPa and elongation at a break of ≈5%. Based on their thermal, mechanical, and dielectric properties, these phenolphthalin-based PAEs are promising for potential applications such as film capacitors.
研究领域:
材料科学
·
电子工程
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DOI
高影响因子
CERAMICS INTERNATIONAL
·
2017
·
IF 2.986
Jinxin Bi,Yunjuan Niu,Haitao Wu
Low-loss novel Li 4 Mg 3 Ti 2 O 9 dielectric ceramics with rock-salt structure were prepared by a conventional solid-state route. The crystalline structure, chemical bond properties, infrared spectroscopy and microwave dielectric properties of the abovementioned system were initially investigated. It could be concluded from this work that the extrinsic factors such as sintering temperatures and grain sizes significantly affected the dielectric properties of Li 4 Mg 3 Ti 2 O 9 at lower sintering temperatures, while the intrinsic factors like bond ionicity and lattice energy played a dominant role when the ceramics were densified at 1450 °C. In order to explore the origin of intrinsic characteristics, complex dielectric constants ( ε ’ and ε ’’ ) were calculated by the infrared spectra, which indicated that the absorptions of phonon oscillation predominantly effected the polarization of the ceramics. The Li 4 Mg 3 Ti 2 O 9 ceramics sintered at 1450 °C exhibited excellent properties of ε r =15.97, Q· f =135,800 GHz and τ f =−7.06 ppm/°C. In addition, certain amounts of lithium fluoride (LiF) were added to lower the sintering temperatures of matrix. The Li 4 Mg 3 Ti 2 O 9 −3 wt% LiF ceramics sintered at 900 °C possessed suitable dielectric properties of ε r =15.17, Q· f =42,800 GHz and τ f =−11.30 ppm/°C, which made such materials promising for low temperature co-fired ceramic applications (LTCC).
研究领域:
材料科学
·
电子工程
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DOI
高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2024
·
IF 5.8
Linzhao Ma,Guo Tian,Hongzhi Xiao,Longxiang Jiang,Qianbiao Du,Hao Li,Bin Yang
This research used the co-substitution strategy to prepare novel spinel-type Mg 3 Ga 2 SnO 8 ceramics sintered at 1430–1510 °C. Rietveld refinement and SEM showed that the Mg 3 Ga 2 SnO 8 ceramic had a cubic spinel structure with a space group of F d 3 ¯ m ( 227 ) , where Mg1 and Mg2/Ga1/Sn1 occupy the tetrahedron and octahedron, respectively. The relative density exhibited a considerable influence on the ε r of Mg 3 Ga 2 SnO 8 ceramics. In addition, the Q × f of the ceramics was closely related to the packing fraction and FWHM. Infrared reflection spectra were used to investigate the intrinsic dielectric characteristics of the ceramics. The P−V−L theory indicated that Sn−O and Ga−O bonds contribute substantially to the ε r and Q × f , respectively. The Mg 3 Ga 2 SnO 8 ceramics had the optimum microwave dielectric properties of ε r = 9.3, Q × f = 189,052 GHz, and τ f = −34.25 ppm/°C when sintered at 1470 °C. Therefore, Mg 3 Ga 2 SnO 8 ceramics exhibit a wide range of possible applications in the field of microwave media.
研究领域:
材料科学
·
电子材料
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DOI
高影响因子
CERAMICS INTERNATIONAL
·
2023
·
IF 5.2
Qianbiao Du,Quanzhang Wen,Longxiang Jiang,Shucheng Liu,Linzhao Ma,Hao Li
A novel low-temperature co-fired ceramic Li 4 SrCaSi 2 O 8 with orthogonal crystal system was synthesized at 860–940 °C by the conventional solid-state reaction. The dense ceramic Li 4 SrCaSi 2 O 8 features the excellent microwave dielectric properties : ϵ r = 8.2, Q × f = 90,094 GHz and τ f = −79.6 ppm/°C at 900 °C. Phillips–van Vechten–Levine (P–V–L) theory reveals that Si–O bond contributes 78.53% to the lattice energy for Li 4 SrCaSi 2 O 8 crystal, and it was concluded that the strong ionicity (79.9%) of the Si–O bond may be responsible for the low sintering temperature of the ceramic. By compounding with CaTiO 3 , a near zero τ f (−9.7 ppm/°C) and excellent comprehensive properties were obtained ( ϵ r = 9.8, Q × f = 50,145 GHz) for 0.93Li 4 SrCaSi 2 O 8 + 0.07CaTiO 3 ceramic at 900 °C. The chemical compatibility was confirmed by co-fired with silver, proving that Li 4 SrCaSi 2 O 8 ceramic with small density is a promising candidate for LTCC dielectric materials .
研究领域:
材料科学
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电子工程
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DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2023
·Vol. 34
·期 10
·1-9
·
IF 2.8
Xue Ying,Wang Zhuo,Li Yanxin,Yi Zhihui,Li Xin,Wu Dan
The abundant requirements of smart terminals promote the rapid development of dielectric materials to further realize the integration and miniaturization of electronic devices. In this work, based on a solid-state reaction method, (In 0.5 Ta 0.5 ) 0.1 Ti 0.9 O 2 (ITTO) ceramics with dense microstructure, colossal permittivity of 1.18 × 10 5 , and ultralow dielectric loss of 0.0072 were obtained at 1 kHz and room temperature. In addition, the temperature coefficient stability and range of the ITTO ceramics were between ± 3.3% and − 100 to 235 °C, satisfying X9D (− 55 to 200 °C, Δ ε r / ε 25°C < ± 3.3%) requirement at 1 kHz. The dielectric mechanisms could be connected to the electron hopping and internal barrier layer capacitor (IBLC) effects. Thus, the acquired ITTO ceramics have advanced advantages with excellent dielectric properties and temperature stability in the practical applications of microelectronic fields.
研究领域:
材料科学
·
电子工程
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DOI
高影响因子
JOURNAL OF POWER SOURCES
·
2025
·
IF 7.9
Shiheng Liu,Yizhuo Li,Jie Zhu,Jingyi An,Ruida Zhao,Youlong Xu
The rapid advancement of artificial intelligence (AI) technology is creating new requirements for supply voltage stability and power conversion efficiency, necessitating electrolytic capacitors with conductive polymer cathode films. A study examines how different doping anions, pH levels, and current densities affect the constant-current electropolymerization of poly(3,4-ethylenedioxythiophene) (PEDOT) on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) substrates. Highly doped PEDOT films with smooth surfaces and a conductivity of 313 S cm −1 are obtained at pH 2 and 0.5 mA cm −2 using dodecyl benzene sulfonate (DBS − ) as a doping anion. A PEDOT:PSS conductive substrate is created on the dielectric surface of anodized aluminum foil. Low current density and then high current density electropolymerization of PEDOT cathodes on substrate allow for more efficient capacitors with high capacitance and low leakage current. Based on this, the chip capacitor is obtained with a capacitance of 80 μF cm −2 level, a loss of 0.65 % at 100 Hz, an equivalent series resistance (ESR) of 4.16 mΩ at 100 kHz, and a leakage current of 0.8 μA at 16 V. This work is significant for the research of ultra-low loss and ESR chip aluminum solid electrolytic capacitors.
研究领域:
材料科学
·
电子工程
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DOI
高影响因子
CERAMICS INTERNATIONAL
·
2024
·
IF 5.1
Guo Tian,Linzhao Ma,Qianbiao Du,Longxiang Jiang,Hongzhi Xiao,Hao Li
A novel type of Li 3 NbO 4 –Li 2 TiO 3 - x MgO (LLM x , x = 1–5) ceramics were prepared using the solid-state reaction method. When the sintering temperature is between 1180 °C and 1300 °C, the solid solution ceramics with cubic rock salt structure are obtained. As the MgO content increases, the ε r value decreases, the τ f value is basically constant, and Q×f exhibits ideal dielectric properties at x = 4 ( ε r = 15.26, Q×f = 119,456 GHz ( f = 9.97 GHz), τ f = −35.9 ppm/°C). The Raman spectrum analysis was used to examine and understand the vibration mode and intrinsic mechanism of dielectric properties in ceramics. Additionally, a dielectric resonant antenna based on LLM 4 ceramic is fabricated with a resonant frequency of 7.23 GHz (|S 11 | = −45.6 dB), a higher gain and broadband width of 501 MHz.
研究领域:
材料科学
·
电子工程
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DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2016
·Vol. 28
·期 2
·1597-1604
·
IF 1.798
Yang Z. L.,Pan H. L.,Jiang X. S.,Wu H. T.
Low loss microwave dielectric ceramics Zn 0.92 Co 0.08 ZrNb 2 O 8 with wolframite structure were prepared by the solid state method. Sintering characteristics, phase composition and microwave dielectric properties were investigated systematically. X-ray diffraction results showed that all samples exhibited a wolframite structure. Rietveld refinement was used to analyze the crystal structure. Based on the lattice parameters, the bond ionicity, the lattice energy, the bond energy and the coefficient of thermal expansion were calculated to evaluate the structural characteristics. The ε
r
values could be strongly dependent on the bond ionicity of the Nb–O bonds. The Q·j values were main affected by the lattice energy and the bond energy of the Nb–O bonds. As for the τ
f
values, it could be mainly affected by the coefficient of thermal expansion of Zn/Co–O bonds. At the sintering temperature of 1200 °C, Zn 0.92 Co 0.08 ZrNb 2 O 8 ceramics exhibited the excellent microwave properties of ε
r
= 27.10, Q·f = 61,036 GHz (at 8.54 GHz) and τ
f
= −9.81 ppm/°C. These results demonstrated that Zn 0.92 Co 0.08 ZrNb 2 O 8 ceramics could be promising candidate materials for the application of highly selective microwave ceramic resonators and filters.
研究领域:
材料科学
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电子工程
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Guolong Wang,Zhuofan Yang,Leyuan Li,Junwen Ren,Jiamei Liu,Lei Li
Modern electrical applications urgently need flexible polymer films with a high dielectric constant (εr) and low loss. Recently, the MXene-filled percolative composite has emerged as a potential material choice because of the promised high εr. Nevertheless, the typically accompanied high dielectric loss hinders its applications. Herein, a facile and effective surface modification strategy of cladding Ti3C2Tx MXene (T = F or O; FMX) with fluorographene (FG) via self-assembly is proposed. The obtained FMX@FG hybrid yields high εr (up to 108 @1 kHz) and low loss (loss tangent tan δ = 1.16 @ 1 kHz) in a ferroelectric polymer composite at a low loading level (the equivalent of 1.5 wt % FMX), which is superior to its counterparts in our work (e.g., FMX: εr = 104, tan δ = 10.71) and other studies. It is found that the FG layer outside FMX plays a critical role in both the high dielectric constant and low loss from experimental characterizations and finite element simulations. For one thing, FG with a high F/C ratio would induce a favorable structure of high β-phase crystallinity, extensive microcapacitor networks, and abundant interfacial dipoles in polymer composites that account for the high εr. For another, FG, as a highly insulating layer, can inhibit the formation of conductive networks and inter-FMX electron tunneling, which is responsible for conduction loss. The results demonstrate the potential of a self-assembled FMX@FG hybrid for high εr and low loss polymer composite films and offer a new strategy for designing advanced polymer composite dielectrics.
研究领域:
材料科学
·
电气工程
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DOI
PubMed
高影响因子
CHINESE JOURNAL OF POLYMER SCIENCE
·
2019
·Vol. 38
·期 3
·213-219
·
IF 2.804
Qian Chao,Fan Zhen-Guo,Zheng Wei-Wen,Bei Run-Xin,Zhu Tian-Wen,Liu Si-Wei,Chi Zhen-Guo,Aldred Matthew P.,Chen Xu-Dong,Zhang Yi,Xu Jia-Rui
High-performance low- k and low-loss circuit materials are urgently needed in the field of microelectronics due to the upcoming Fifth-Generation Mobile Communications Technology (5G Technology). Herein, a facile design strategy for non-fluorinated intrinsic low- k and low-loss polyimides is reported by fully considering the secondary relaxation behaviors of the polymer chains. A new amorphous non-fluorinated polymer (TmBPPA) with a k value of 2.23 and a loss tangent lower than 3.94 × 10 −3 at 10 4 Hz has been designed and synthesized, which to the best of our knowledge is the lowest value amongst the non-fluorinated and non-porous polymers reported in literature. Meanwhile, TmBPPA exhibits excellent overall properties, such as excellent thermostability, good mechanical properties, low moisture absorption, and high bonding strength. As high-performance flexible circuit materials, all these characteristics are highly expected to meet the present and future demands for high density, high speed, and high frequency electronic circuit used in 5G wireless networks.
研究领域:
材料科学
·
电子工程
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DOI
高影响因子
危险品化学品经营许可证（带存储）