Science Advances
·
2025
·Vol. 11
·期 9
·
IF 12.5
Quanlin Chen,Mingwei Ge,Cong Geng,Jia Zhang,Linyue Gao,Zhuanzhuan Huang,Saike Wang,Yanxing Feng,Xinxin Yue,Saif M. H. Qaid,Xuewen Fu,Mei Wang,Yuanzhi Jiang,Mingjian Yuan
Developing direct full-stokes imaging polarimetry is essential for various applications but remains challenging. Perovskites have superior optoelectronic properties and structural diversity, making them ideal candidates for high-performing direct full-stokes polarimetry. However, perovskite suffers low chiroptical activity due to inefficient chiral transfer, which greatly limits its circular-polarization-vector discrimination. These issues urgently require remedy. Here, we demonstrate that perovskites’ chiroptical activity is highly related to their structural chiral-distortion extent. We propose using halide mixing to construct asymmetric chiral transfer to heighten its structural chiral-distortion extent. Accordingly, we report a 16-fold increment in the optical chiroptical activity. Further ab initio calculations verify that the enhancement is due to the strengthened magnetic transition dipole in mixed-halide structures. We herein report a self-powered, direct full-Stokes polarimetry with a high detectivity up to 1.2 × 1012 Jones and low detection errors (ΔS1–3 ≤ 5.0%). We further showcase their application in full-stokes imaging polarimetry with the lowest detection errors yet.
研究领域:
材料科学
·
光学工程
·
物理化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Energy Materials
·
2021
·Vol. 11
·期 29
·2100742
·
IF 29.368
Qian Song,Yang Wang,Florian Vogelbacher,Yan Zhan,Danlei Zhu,Yangjie Lan,Wenzhong Fang,Zemin Zhang,Lang Jiang,Yanlin Song,Mingzhu Li
Perovskite (PVK) photodetectors (PDs) have emerged as highly-efficient versatile optoelectrical devices due to their highly efficient and simple solution-processable preparation method. Meanwhile, optical structures offer an efficient and facile strategy to improve the light-harvesting performance of devices and introduce extra optical activity such as polarization sensitivity. Here, an efficient moiré perovskite photodetector with a stacked dual shallow grating structure is designed and fabricated, and sensitive digital polarization imaging is realized. The moiré PVK presents superior ability in light harvesting through the synergistic effects of feedback reflection, diffraction, and excitation of waveguide modes in the dual grating structure. Additionally, the highly crystalline PVK is fabricated through the imprint lithography process. Consequently, excellent device performance is achieved by taking advantage of highly-efficient light-harvesting and the good electrical properties of large grain PVK crystals. The responsivity (R) and detectivity (D*) of the moiré PVK PD are up to 15.62 A W and 5.58 × 10 13 Jones, which are 6.7 and 7.8 times larger than that of the flat perovskite photodetector, respectively. The on/off ratio reaches 2.7 × 10 4 . The nanograting array introduces good polarization sensitivity to the moiré PVK PD achieving a peak-to-valley ratio of 1.58. Excellent polarization images are obtained using a 576 pixel sensor array.
研究领域:
光电子学
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纳米光子学
·
材料科学
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传感器技术
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光学工程
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半导体器件
✓ 已验证
DOI
高影响因子
ADVANCED MATERIALS
·
2024
·Vol. 36
·期 36
·2407010
·
IF 27.4
Dongyan Li,Zexin Li,Yan Sun,Jian Zhou,Xiang Xu,Haoyun Wang,Yunxin Chen,Xingyu Song,Pengbin Liu,Zhengtang Luo,Su-Ting Han,Xing Zhou,Tianyou Zhai
Miniaturized polarimetric photodetectors based on anisotropic two-dimensional materials attract potential applications in ultra-compact polarimeters. However, these photodetectors are hindered by the small polarization ratio values and complicated artificial structures. Here, a novel polarization photodetector based on in-sublattice carrier transition in the CdSb 2 Se 3 Br 2 /WSe 2 heterostructure, with a giant and reconfigurable PR value, is demonstrated. The unique periodic sublattice structure of CdSb 2 Se 3 Br 2 features an in-sublattice carrier transition preferred along Sb 2 Se 3 chains. Leveraging on the in-sublattice carrier transition in the CdSb 2 Se 3 Br 2 /WSe 2 heterostructure, gate voltage has an anisotropic modulation effect on the band alignment of heterostructure along sublattice. Consequently, the heterostructure exhibits a polarization-tunable photo-induced threshold voltage shift, which provides reconfigurable PR values from positive (unipolar regime) to negative (bipolar regime), covering all possible numbers (1→+∞/−∞→−1). Using this anisotropic photovoltaic effect, gate-tunable polarimetric imaging is successfully implemented. This work provides a new platform for developing next-generation highly polarimetric optoelectronics.
研究领域:
凝聚态物理
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纳米光电子学
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材料科学
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半导体器件
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二维材料
✓ 已验证
DOI
高影响因子
InfoMat
·
2024
·Vol. 7
·期 1
·e12625
·
IF 22.7
Jidong Liu,Haibo Gan,Qiaoyan Hao,Yonghong Zeng,Youning Gong,Jiaqi Zhu,Jiarui Huang,Fei Liu,Wenjing Zhang
Dual-band photodetectors exhibit considerable advantages in target discrimination and navigation compared to single-band devices in complex circumstances. However, it remains a major challenge to overcome the limitations of traditional devices in terms of their integration with multiple light-absorbing layers and complicated optical components. In this study, a visible and near-infrared (NIR) dual-band polarimetric photodetector with a single light-absorbing layer is constructed by utilizing the distinctive conversion of linear dichroism (LD) polarity in two-dimensional niobium trisulfide (NbS 3 ). The NbS 3 photodetector exhibits selective detection behaviors in the visible and NIR bands, in which by switching the polarization angle of the incident light from 0° to 90°, photocurrent decreases in the visible region, and increases in the NIR region. Specifically, the degrees of linear polarization of photocurrent are 0.59 at 450 nm and −0.47 at 1300 nm, respectively. The opposite photoresponse in the visible and NIR bands of the photodetector significantly enhances the dual-band information recognition. Therefore, clear visible and NIR dual-band polarimetric imaging is accurately realized based on the NbS 3 photodetector taking advantage of its fast response speed of 28 μs. Such anisotropic materials, with unique LD conversion features, can facilitate selective modulation between the visible and NIR spectral ranges and promote the development of next-generation multi-dimensional photodetection for various applications, including com/puter vision, surveillance, and biomedical imaging.
研究领域:
光学工程
·
纳米材料科学
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光电子学
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生物医学成像
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传感器技术
✓ 已验证
DOI
高影响因子
Advanced Science
·
2021
·Vol. 8
·期 14
·2100075
·
IF 16.806
Wen Yang,Juehan Yang,Kai Zhao,Qiang Gao,Liyuan Liu,Ziqi Zhou,Shijun Hou,Xiaoting Wang,Guozhen Shen,Xinchang Pang,Qun Xu,Zhongming Wei
With the increasing demand for detection accuracy and sensitivity, dual-band polarimetric image sensor has attracted considerable attention due to better object recognition by processing signals from diverse wavebands. However, the widespread use of polarimetric sensors is still limited by high noise, narrow photoresponse range, and low linearly dichroic ratio. Recently, the low-dimensional materials with intrinsic in-plane anisotropy structure exhibit the great potential to realize direct polarized photodetection. Here, strong anisotropy of 1D layered bismuth sulfide (Bi 2 S 3 ) is demonstrated experimentally and theoretically. The Bi 2 S 3 photodetector exhibits excellent device performance, which enables high photoresponsivity (32 A W −1 ), I on / I off ratio (1.08 × 10 4 ), robust linearly dichroic ratio (1.9), and Hooge parameter (2.0 × 10 −5 at 1 Hz) which refer to lower noise than most reported low-dimensional materials-based devices. Impressively, such Bi 2 S 3 nanowire exhibits a good broadband photoresponse, ranging from ultraviolet (360 nm) to short-wave infrared (1064 nm). Direct polarimetric imaging is implemented at the wavelengths of 532 and 808 nm. With these remarkable features, the 1D Bi 2 S 3 nanowires show great potential for direct dual-band polarimetric image sensors without using any external optical polarizer.
研究领域:
光电子学
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纳米光子学
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偏振成像
·
低维材料
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红外探测
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Guanghui Peng,Chentao Zhang,Mingxuan Li,Jingyao Zhang,Chuangwei Wu,Zhongjun Qin,Liqiang Xu,Chuanqiang Wu,Hengjie Liu,Li Song,Xue Liu,Wei Gan
Polarization-based communication and on-chip imaging devices are crucial for the next generation of multifunctional devices. Due to their thickness-dependent properties and polarization detection capabilities, single-element two-dimensional (2D) materials have emerged as promising candidates. However, achieving devices with low static power consumption, tunable polarization-sensitive photodetection, and a broadband photoresponse remains challenging. Herein, we report high-performance polarization-sensitive photodetectors based on 2D selenium (Se), photodetectors that exhibit an excellent polarization ratio of 3.09, an ultralow dark current (∼10–12 A), a fast response time (∼3 ms), as well as air stability exceeding two months without encapsulation. Its unique intrinsically anisotropic atomic chain structure enables a polarization-sensitive photoresponse, which can be effectively modulated by gate voltage and power density. The polarized light-encrypted communication and polarization imaging based on a 2D-Se photodetector are further demonstrated. This study opens up a promising pathway for next-generation high-performance and multifunctional photodetectors.
研究领域:
纳米电子学
·
光子学
·
二维材料
·
光电子器件
·
偏振成像
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Science Bulletin
·
2023
·
IF 18.9
Ziqi Zhou,Tao Shen,Pan Wang,Quanlin Guo,Qinghe Wang,Chenjun Ma,Kaiyao Xin,Kai Zhao,Yali Yu,Biao Qin,Yue-Yang Liu,Juehan Yang,Hao Hong,Kaihui Liu,Can Liu,Hui-Xiong Deng,Zhongming Wei
Polarization-sensitive photodetectors, with the ability of identifying the texture-, stress-, and roughness-induced light polarization state variation, displace unique advantages in the fields of national security, medical diagnosis, and aerospace. The utilization of in-plane anisotropic two-dimensional (2D) materials has led the polarization photodetector into a polarizer-free regime, and facilitated the miniaturization of optoelectronic device integration. However, the insufficient polarization ratio (usually less than 10) restricts the detection resolution of polarized signals. Here, we designed a sub-wavelength array (SWA) structure of 2D germanium selenium (GeSe) to further improve its anisotropic sensitivity, which boosts the polarized photocurrent ratio from 1.6 to 18. This enhancement comes from the combination of nano-scale arrays with atomic-scale lattice arrangement at the low-symmetric direction, while the polarization-sensitive photoresponse along the high-symmetric direction is strongly suppressed due to the SWA-caused depolarization effect. Our mechanism study revealed that the SWA can improve the asymmetry of charge distribution, attenuate the matrix element in zigzag direction, and the localized surface plasma, which elevates the photo absorption and photoelectric transition probability along the armchair direction, therefore accounts for the enhanced polarization sensitivity. In addition, the photodetector based on GeSe SWA exhibited a broad power range of 40 dB at a near-infrared wavelength of 808 nm and the ability of weak-light detection under 0.1 LUX of white light (two orders of magnitude smaller than pristine 2D GeSe). This work provides a feasible guideline to improve the polarization sensitivity of 2D materials , and will greatly benefit the development of polarized imaging sensors.
研究领域:
光电子学
·
纳米光子学
·
偏振成像
·
二维材料
·
光电探测器
·
半导体器件
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2019
·Vol. 7
·期 18
·1900330
·
IF 7.125
Yong Ge,Mengjiao Zhang,Lei Wang,Linghai Meng,Jialun Tang,Yu Chen,Lingxue Wang,Haizheng Zhong
Polarization can be used to distinguish artificial objects in complicated environments. The development of polarization-sensitive detection at ultraviolet (UV) wavelengths has been substantially delayed by the difficulties in fabricating anisotropic materials and optical elements for polarization modulation. Polarization-sensitive UV detection is developed by combining an electron-multiplying charge-coupled device (EMCCD) with a polarized luminescence downshifting material that benefits from an oriented-CdSe@CdS-dot-in-rods-embedded polyvinylidene fluoride (PVDF) composite film. With mechanical-stretching-induced orientation, the composite film shows emission polarization with an optimized ratio up to 0.52 ± 0.02. This integrated detection system can respond to linearly polarized 405 nm light with a signal difference up to 23%, showing its potential for use in UV polarization-enhanced imaging for object recognition.
研究领域:
光电子学
·
纳米材料
·
偏振成像
·
光电探测器
·
紫外传感
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）