Small
·
2022
·Vol. 19
·期 2
·2205353
·
IF 15.153
Fapeng Sun,Wenting Hong,Xu He,Chuanyong Jian,Qiankun Ju,Qian Cai,Wei Liu
β-Ag 2 Te has attracted considerable attention in the application of electronics and optoelectronics due to its narrow bandgap, high mobility, and topological insulator properties. However, it remains a significant challenge to synthesize 2D Ag 2 Te because of the non-layered structure of Ag 2 Te. Herein, the synthesis of large-size, ultrathin single crystal topological insulator 2D Ag 2 Te via the van der Waals epitaxial method for the first time is reported. The 2D Ag 2 Te crystal exhibits p-type conduction behavior with high carrier mobility of 3336 cm 2 V −1 s −1 at room temperature. Taking advantage of the high mobility and perfect electron structure of Ag 2 Te, the Ag 2 Te/WSe 2 heterojunctions are fabricated via mechanical stacking and show an ultrahigh rectification ratio of 2 × 10 5 . Ag 2 Te/WSe 2 photodetector also exhibits self-driven properties with a fast response speed (40 µs/60 µs) in the near-infrared region. High responsivity (219 mA W −1 ) and light ON/OFF ratio of 6 × 10 5 are obtained under the photovoltaic mode. The overall performance of the Ag 2 Te/WSe 2 photodetector is significantly competitive among all reported 2D photodetectors. These results indicate that 2D Ag 2 Te is a promising candidate for future electronic and optoelectronic applications.
研究领域:
凝聚态物理
·
材料科学
·
纳米电子学
·
光电子学
·
半导体器件
·
二维材料科学
✓ 已验证
DOI
高影响因子
CURRENT APPLIED PHYSICS
·
2023
·
IF 2.4
WenXin Zhang,Hao Li,Haofei Cong,Ruifu Zhou,Yuanbin Qin,Peilong Xu,Xuhai Liu,Fengyun Wang
One-dimensional wide band-gap metal oxide semiconductors demonstrate enormous potential in high-performance ultraviolet photodetectors. Here, via tuned zinc oxide (ZnO) concentration ratio and heterojunction structure as well as decent V TH value, we electrospun tin zinc oxide (SnZnO X ) nanowires for photoelectronic conversion function. The constructed optimized photodetectors based on Sn 8 Zn 2 O X nanowires can exhibit a remarkable detectivity of 1.77 × 10 16 Jones, excellent responsivity of 2.23 × 10 3 A/W and relative high sensitivity over 10 4 . In addition to the excellent photodetection performance, Sn 8 Zn 2 O X nanowire devices exhibit nonvolatile memory effect , which can maintain the light-induced low resistance state at 5 V without light. Moreover, a voltage of 30 V was applied to Sn 8 Zn 2 O X nanowires devices to realize light-writing state switching to bias-erasing state, and the device could come back to their initial high resistance state. These results indicate SnZnO X nanowires devices possess a tremendous potential in the circuit design of the artificial visual system.
研究领域:
材料科学
·
纳米电子学
·
光电子学
·
半导体器件
·
人工视觉系统
✓ 已验证
DOI
高影响因子
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
·
2017
·Vol. 214
·期 11
·1700538
·
IF 1.775
Peihua Wangyang,Hui Sun,Xinghua Zhu,Dingyu Yang,Xiuying Gao,Wenyi Liu,Yan Chen,Haibo Tian,Sibo Huanglong
A promising photodetector based on CH 3 NH 3 PbI 3 single crystal under visible light and X-ray irradiation is reported. The CH 3 NH 3 PbI 3 crystal grown by inverse temperature crystallization acts as the absorber material directly converting visible light and the impinging X-ray photons to electron hole pairs, respectively. The underlying photoelectric response mechanism behind the observation under visible light and X-ray irradiation is carefully discussed. Remarkably, the perovskite detectors demonstrate a good air-exposure stability for more than 2 months with encapsulation. The results demonstrate that the CH 3 NH 3 PbI 3 single crystal has a great potential for application in the visible light and X-ray detection.
研究领域:
材料科学
·
凝聚态物理
·
核医学
·
生物医学工程
·
辐射检测
·
半导体器件
✓ 已验证
DOI
高影响因子
Advanced Electronic Materials
·
2023
·Vol. 9
·期 11
·2300392
·
IF 6.2
Guangliang Li,Lingxian Kong,Qi Su,Xianhua Tan,Xuning Zhang,Zhiyong Liu,Tielin Shi,Guanglan Liao,Bo Sun
Few-layer black phosphorus (FL-BP) shows great potential in infrared polarization-sensitive photodetection due to its narrow bandgap and strong in-plane anisotropy. However, FL-BP is easy to be oxidized and degraded, which severely restricts its applications. Herein, a simple and scalable in situ interfacial passivation method based on pentacene film is reported to enhance the ambient stability of FL-BP as well as achieve n-type doping for improved polarization-sensitive photoimaging. High crystal quality FL-BP flakes with intrinsic anisotropy are prepared by electrochemical exfoliation. The morphology and Raman spectra of FL-BP/pentacene exhibit excellent stability 28 days after passivation. In addition, the hole mobility is significantly enhanced and dark current is substantially suppressed due to the interfacial passivation and n-type doping effect. The FL-BP/Pentacene based photodetector shows a broadband response from visible to near-infrared with good stability. The photoresponsivity under 915 nm illumination is calculated as 2.2 mA W −1 with an anisotropy ratio of 1.29. Furthermore, the polarization imaging under the irradiation at zigzag and armchair directions directly reveals the strong infrared polarization-sensitive imaging capability of FL-BP/pentacene. This work also opens up new avenues to enhance the photoresponse and stability of various optoelectronics based on similarly unstable 2D materials.
研究领域:
纳米材料学
·
光电子学
·
二维材料
·
半导体物理
·
红外成像
·
表面科学
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2019
·Vol. 29
·期 38
·1904416
·
IF 15.621
Huai Yang,Longfei Pan,Xiaoting Wang,Hui-Xiong Deng,Mianzeng Zhong,Ziqi Zhou,Zheng Lou,Guozhen Shen,Zhongming Wei
Mixed-valence states can bring unexpected unique phenomena, especially novel anisotropic physics, due to structural asymmetry, which originate from the discrepant distribution of atoms with different valence. This study reports an unexploited mixed-valence-driven quasi-1D Sn II Sn IV S 3 crystal, which exhibits widely and distinctively anisotropic polarized-light absorption reaching ≈3.4 from the deep ultraviolet to near-infrared region (250–850 nm). The fabricated polarization-sensitive photodetectors based on highly air-stable Sn II Sn IV S 3 nanowires display strong linear dichroism among the UV–vis–NIR spectrum with responsivity exceeding ≈150 A W −1 . Furthermore, the devices are further constructed onto a flexible polyethylene terephthalate (PET) substrate and the photoresponse remains roughly unchanged after repeated bending. This work based on novel mixed-valence-driven quasi-1D ternary sulfide Sn II Sn IV S 3 excites interest in low-symmetry semiconductors for developing broadly spectral polarization-sensitive photodetectors with environmental stability and mechanical flexibility.
研究领域:
材料科学
·
半导体物理
·
纳米光学
·
光电子学
·
凝聚态物理
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2016
·Vol. 4
·期 11
·1829-1837
·
IF 5.359
Yucheng Liu,Jiankun Sun,Zhou Yang,Dong Yang,Xiaodong Ren,Hua Xu,Zupei Yang,Shengzhong (Frank) Liu
CH 3 NH 3 PbX 3 (MAPbX 3 )-based perovskite has attracted tremendous research efforts in the last few years. With the discovery that the HC(NH 2 ) 2 PbI 3 (FAPbI 3 ) perovskite offers even higher solar cell efficiency, better thermal stability, and broader optical absorption, it is expected that it will provide more excitement in optoelectronic applications including laser, LED, photodetector, etc. The development in preparing large Single-Crystalline Formamidinium-Perovskite FAPbI 3 using the inverse-temperature reactive crystallization process, and associated wafer-slicing process is presented. The availability of the large Single-Crystalline Formamidinium-Perovskite Wafer makes it possible to fabricate integrated circuits. An array of 153 photodetectors on a piece of thin wafer, demonstrating feasibility of mass production of integrated circuits on the perovskite wafer is designed and prepared. It is found that the wafer-based photodetector shows much superior performance, with 90 times higher photoresponse and broader optical absorption than its thin-film perovskite counterpart.
研究领域:
材料科学
·
半导体物理
·
光电子学
·
晶体生长
·
器件 fabrication
✓ 已验证
DOI
高影响因子
Advanced Electronic Materials
·
2018
·Vol. 4
·期 7
·1800154
·
IF 5.466
Qiu Li,Aixiang Wei,Jianting Lu,Lili Tao,Yibin Yang,Dongxiang Luo,Jun Liu,Ye Xiao,Yu Zhao,Jingbo Li
Layered 2D semiconductors, such as graphene and transition-metal dichalcogenides (TMDs), are receiving intensive attention owing to their great performance in electronic and optoelectronic application during the past few years. Among them, SnS has similar anisotropy to black phosphorus and high photoresponse in the near infrared range, rendering it as an ideal candidate for infrared photodetectors. In this work, large-size (up to 330 µm) and high-quality single-crystalline SnS nanoplates are synthesized successfully via controlled chemical vapor deposition technique and characterized by field-emission scanning electron microscopy, X-ray diffraction, confocal Raman system, atomic force microscope, transmission electron microscopy, and photoluminescence spectroscopy. Photodetectors based on as-grown SnS nanoplates are fabricated with back-gated field effect transistors (FETs) configuration, exhibiting a high mobility of 17.1 cm 2 V −1 s −1 . Photodetectors based on the SnS FETs demonstrate excellent optoelectronic performance both in visible and near-infrared spectral range. Typically, photoresponsivity of 197.7 A W −1 , photoresponse time of 39 ms, and external quantum efficiency of 6.06 × 10 4 % are exhibited under the irradiation of 405 nm laser. The wide response range and ultrahigh sensitivity make the large-area single crystal SnS nanoplate a promising candidate for future application in optoelectronics.
研究领域:
材料科学
·
纳米科技
·
半导体物理
·
光电子学
·
凝聚态物理
✓ 已验证
DOI
高影响因子
OPTICAL MATERIALS
·
2024
·
IF 3.8
Zhi Yang,Shufang Ma,Yu Shi,Xiaodong Hao,Lin Shang,Bin Han,Bocang Qiu,Bingshe Xu
Nanowires (NWs)-based heterojunction photodetectors (PDs) have been widely applied in the fields of remote sensing, night vision, environmental monitoring, and optical communications with high light absorption coefficient and photoelectric conversion efficiency. Here, S-GaAs NWs/Si heterojunction was developed to form a broadband self-powered PDs by growing GaAs NWs on Si substrate through the sulfur-catalyzed assisted chemical vapor deposition (CVD) technology. Compared with the pure GaAs NWs, the sulfur-assisted catalysts could not only inhibit Ostwald ripening of Au seeds to improve the crystalline quality of NWs but also form a thin Ga–S bond passivation layer to reduce surface defects and enhance the optoelectronic performance of the PDs. The fabricated GaAs NWs/Si heterojunction PDs exhibit excellent performances with the large responsivity of 10.3 mA W −1 and high detectivity of 9.59 × 10 12 cm Hz 1/2 W −1 . Additionally, the designed PDs have the broadband wavelength photoresponse from visible to near infrared and fast response speed (rise/fall time of 3.8/21.8 ms). Importantly, the develop strategy of hybrid heterojunction PDs can be extended to other semiconductor materials for facilitating the practical application of high-performance optoelectronic devices .
研究领域:
半导体材料
·
纳米电子学
·
光电子学
·
凝聚态物理
·
功能材料
·
器件物理
✓ 已验证
DOI
高影响因子
Nanoscale
·
2015
·Vol. 8
·期 5
·2811-2818
·
IF 7.394
Jia-Mei Yang,Feng-Xia Wang,Ge-Bo Pan
Blend films with long nanowires of zinc octaethylporphyrin (ZnOEP) embedded in an insulating polymer of poly(methyl methacrylate) (PMMA) have been successfully fabricated by a one-step spin-coating process. Concerning photoactive blends based on small-molecule semiconductors, this is quite a novel strategy and allows us to greatly reduce the issues related to low device performance, such as phase-separation, poor connectivity of the semiconducting layer, and higher densities of interfacial defects. Intensive studies on the correlation between the film morphology and device performance have revealed that excellent photodetector performance is derived from efficient charge transport and good connectivity observed in highly crystalline, interconnected ZnOEP nanowires embedded in an insulating PMMA matrix. To the best of our knowledge, this is the first demonstration of a blend-film-based organic photodetector, which exhibits high sensitivity, high stability, high Ion/Ioff ratio, excellent mechanical flexibility, and a broadband responsivity region extending up to 1050 nm. The unique characteristics of facile fabrication, high sensitivity, excellent mechanical stability, and broadband responsivity can make the blend film of ZnOEP and PMMA promising in large-area flexible photodetectors.
研究领域:
材料科学
·
纳米科技
·
有机电子学
·
光电子学
·
柔性电子器件
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2024
·
IF 13.3
Wei Zhou,Wanglong Mao,Pingyang Huang,Xiong Huang,Haoyuan Xu,Bo Wu,Xiaofang Jiang,Xiangtao Chen,Hanyu Liu,Guofu Zhou,Jinyou Xu
This study introduces a facile method for the controlled growth of addressable planar arrays of highly luminescent, catalyst-free 1,4-bis(5-phenyloxazol-2-yl)benzene (POPOP) nanowires. By employing a hollow mask over a faceted sapphire substrate, simultaneous control over the position and orientation of the nanowires is achieved through a mask-confined graphoepitaxial growth, offering substantial advantages over traditional post-growth assembly techniques. High-temperature annealing creates parallel nanogrooves on the sapphire surface, inducing a graphoepitaxial effect that aligns the nanowires with a consistent [102] crystallographic axis. The hollow mask further aids in precisely localizing nanowire growth through its shadowing effect. Optoelectronic investigations reveal that these nanowires emit intense and stable blue photoluminescence at room temperature, with a broad spectrum spanning from 400 to 600 nm. This luminescence is achieved through excitation by continuous-wave ultraviolet light or two-photon absorption using femtosecond infrared light. Notably, the emission quantum efficiency of POPOP nanowires reaches 59 %, a remarkable improvement over the 12 % observed in powder counterparts when excited with 405 nm light. Transit absorption spectra indicate that ground state bleaching and excited state absorption display consistent kinetics within a 100 ps time window, suggesting the same origin from singlet excitons. The precise alignment and positioning of these nanowires make them viable for in-situ integration into photodetectors with rapid ultraviolet light responses. This study advances the controlled growth of catalyst-free nanowire arrays and enhances the understanding of the optoelectronic properties of POPOP nanowires.
研究领域:
材料科学
·
纳米科技
·
光电子学
·
凝聚态物理
·
表面科学
·
有机半导体
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2024
·Vol. 12
·期 32
·2401539
·
IF 8
Qianjin Wang,Zhilin Xiang,Peizhi Yang,Yingkai Liu,Qiuhong Tan
Metal halide perovskites recently have emerged as a promising candidate for photodetection due to their exceptional photoelectric performance. However, the high dark current in these materials has hindered their practical application to imaging. In this study, a novel halogen-mixed CsPbIBr 2 microwire photodetector that has a remarkable reduction of dark current by over 100-fold (compared to CsPbBr 3 ), along with a substantial increase in photocurrent, which yields a significantly improved on/off ratio of 6.56 × 10 4 , is developed. More importantly, the halogen-mixed perovskite photodetector exhibits enhanced photodetection performance, including a high responsivity of 133 A W −1 and a remarkable specific detectivity of 4.02 × 10 12 Jones even under ultraweak light conditions as low as 4.5 nW cm −2 . More specifically, high-resolution images are successfully obtained under ultraweak light conditions. The combined analysis of experimental results and first-principles calculation attribute the excellent performance of the CsPbIBr₂ microwire photodetector to a significant reduction in dark current by suppressing ion migration and increasing carrier effective mass, and a remarkable increase in photocurrent resulting from reduced bandgap and enhanced light absorption, as compared to CsPbBr 3 . This research represents a significant advancement in the development of high-performance 1D perovskite-based photodetectors, with promising implications for ultra-weak light imaging applications.
研究领域:
光电子学
·
材料科学
·
纳米器件
·
半导体物理
·
生物医学成像
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2020
·
IF 6.984
Shusheng Pan,Ziyue Rao,Yujie Wu,Zhiyu Liu,Jun Ge,Shan Zhang
In this study, a temperature self-regulating solar reactor based on VO 2 thermochromic coating is demonstrated. The temperature of solar reactor can be stabilized at 68.8 °C, which is corresponded to the critical point of metal-to-insulator transition of VO 2 . By employing the solar reactor, the orthorhombic phase CsPbI 3 microwires have been synthesized through solution phase reaction route. Strong emission peaks at 490 nm and 470 nm have been observed in CsPbI 3 microwires under ultraviolet and soft X-ray excitation, respectively. The high performance photodetector based on CsPbI 3 microwire show a detectivity of 1.09 × 10 14 Jones, responsivity of 4.72 A/W, rapid rise and decay time of 0.96 and 0.93 s at 325 nm. Our results demonstrate that the temperature self-regulating solar reactor can be applied for energy-saving solution phase reactor for synthesizing high quality inorganic materials.
研究领域:
材料科学
·
纳米光电子学
·
无机功能材料
·
能源材料
·
半导体器件
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）