JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Xinhong Zhao,Kai Li,Yongchu Fang,Yu Tao,Xiaoxian Song,Haiting Zhang,Huaqing Yu,Zaoxue Yan
Flexible photodetectors based on vertically stacked PEDOT:PSS/PbS/CsPbCl 3 were prepared by a simple low temperature spin-coating method. Due to the synergistic effect, the flexible PEDOT:PSS/PbS/CsPbCl 3 photodetectors exhibited a high responsivity of 6.67 A/W and detectivity of 5.78 × 10 10 Jones under a relatively low external bias. The photocurrent of a series of continuous-bending shown that the flexible PEDOT:PSS/PbS/CsPbCl 3 photodetectors had excellet photocurrent stability and reproducibility. The results indicate that the vertically stacked PEDOT:PSS/PbS/CsPbCl 3 architecture has great potential in wearable and portable low-voltage optoelectronic devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Nanomaterials
·
2019
·Vol. 9
·期 9
·1312
·
IF 4.034
Feng Huang,Jing Zhou Li,Zhu Hua Xu,Yuan Liu,Ri Peng Luo,Si Wei Zhang,Peng Bo Nie,Yan Fei Lv,Shi Xi Zhao,Wei Tao Su,Wen Di Li,Shi Chao Zhao,Guo Dan Wei,Hao Chung Kuo,Fei Yu Kang
Two-dimensional (2D) tungsten disulfide (WS2) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS2domains with the coexistence of a discontinuous single layer and multilayers are still not suitable for the fabrication of photodetectors on a large scale. An emerging field in the integration of organic materials with 2D materials offers the advantages of molecular diversity and flexibility to provide an exciting aspect on high-performance device applications. Herein, we fabricated a photodetector based on a 2D-WS2/organic semiconductor materials (mixture of the (Poly-(N,N′-bis-4-butylphenyl-N,N′-bisphenyl) benzidine and Phenyl-C61-butyric acid methyl ester (Poly-TPD/PCBM)) heterojunction. The application of Poly-TPD/PCBM organic blend film enhanced light absorption, electrically connected the isolated WS2domains, and promoted the separation of electron-hole pairs. The generated exciton could sufficiently diffuse to the interface of the WS2and the organic blend layers for efficient charge separation, where Poly-TPD was favorable for hole carrier transport and PCBM for electron transport to their respective electrodes. We show that the photodetector exhibited high responsivity, detectivity, and an on/off ratio of 0.1 A/W, 1.1 × 1011Jones, and 100, respectively. In addition, the photodetector showed a broad spectral response from 500 nm to 750 nm, with a peak external quantum efficiency (EQE) of 8%. Our work offers a facile solution-coating process combined with a CVD technique to prepare an inorganic/organic heterojunction photodetector with high performance on silicon substrate.Keywords:2D-WS2;photodetector;organic semiconductor;responsivity
研究领域:
材料科学
·
光电领域
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2019
·Vol. 7
·期 18
·5442-5450
·
IF 6.641
Zhishuai Yuan,Wei Huang,Shoutao Ma,Gang Ouyang,Wei Hu,Wei Zhang
Hybrid organic–inorganic lead halide perovskites (CH3NH3PbX3, X = Cl, Br, or I) are deemed to be the highest potential semiconducting materials due to their unique optoelectronic properties. Nowadays, most perovskite photodetectors are fabricated on the basis of thin films, and their performances are limited by the low carrier mobility and high trap density of the thin films. Herein, a high performance photodetector was fabricated via a method involving inversion temperature precision gradient crystallization (ITPGC) for the first time, which is an improvement on traditional methods. The structure of the bulk single crystal is confirmed via XRD and TEM characterization. Also, in terms of nucleation and growth theory, the growth mechanism is explained in detail and the best growth temperature is suggested to be 80 °C for the first time. Benefiting from this, a photodetector with ultra-high responsivity of 7.97 A W−1 is obtained, which is superior to thin film photodetectors. Also, a rise time of 1.27 ms and a fall time of 1.84 ms are obtained, which are regarded as pioneering values for this type of system. Meanwhile, the study also provides new ideas for the preparation of bulk single crystals.
研究领域:
材料科学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Chao Fan,Zhe Liu,Shuo Yuan,Xiancheng Meng,Xia An,Yongkai Jing,Chun Sun,Yonghui Zhang,Zihui Zhang,Mengjun Wang,Hongxing Zheng,Erping Li
Two dimensional (2D) tin disulfide (SnS2) has attracted growing interest as a promising high performance photodetector with superior performance such as fast response time, high responsivity, and good stability. However, SnS2-based photodetectors still face great challenges, and the photodetection performance needs to be improved for practical applications. Herein, indium-doped SnS2 (In-SnS2) few layers were exfoliated from CVT-grown single crystals, which were synthesized by chemical vapor transport. Photodetectors based on In-SnS2 few layers were fabricated and detected. Compared with photodetectors based on pristine SnS2, photodetectors based on In-SnS2 few layers exhibited better photodetection performances, including higher responsivities, higher external quantum efficiencies, and greater normalized detectivities. The responsivity (R), external quantum efficiency (EQE), and normalized detectivity (D*) were increased by up to 2 orders of magnitude after In doping. Considering responsivity and response time, the photodetector based on 1.4 at. % In-SnS2 few layers exhibited an optimal photodetection performance with a high R of 153.8 A/W, a high EQE of 4.72 × 104 %, a great D* of 5.81 × 1012 Jones, and a short response time of 13 ms. Our work provides an efficient path to enhance photodetection performances of photodetectors based on SnS2 for future high-performance optoelectronic applications.
研究领域:
材料科学
·
光电技术
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2022
·
IF 5.532
Meng Miao,Zhipeng Wang,Zhiming Guo,Guijun Yan,Jinfeng Xing
Photoconductive near-infrared sensors have the advantages of low cost and simple structure, but their overall performances are dissatisfactory yet. As potential candidates for active layers of near-infrared sensors, lead sulfide quantum dots are often accompanied by the long chain ligands with negative effects. To address this issue, a precursor ink for a lattice-matched methylammonium lead iodide solid sol of lead sulfide quantum dots (PbS-QDs/MAPbI 3 solid sol) is developed, which is based on ligand exchange. Subsequently, a high-performance uncooled photoconductive near-infrared sensor based on the PbS-QDs/MAPbI 3 solid sol is fabricated by simple dip coating. Outstanding overall performance of this near-infrared sensor on sensing near-infrared light is reflected in the external quantum efficiency over 2458%, the responsivity up to 18.61 A/W, the normalized detectivity up to 1.29 × 10 13 Jones, the rise (or fall) time constant less than 2 μs, the ratio of light current to dark current up to 433, the strong linear correlation with 99.8% variance between light current and irradiation intensity, and the 97% retention rate of response within 60 days. The solution-processed uncooled photoconductive near-infrared sensor successfully combines simple structure with outstanding performance.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
ACS Applied Nano Materials
·
2025
·
IF 5.5
Fengpu Zhang,Fang Wang,Shuyu Xu,Xiangjie Zhang,Xin Lin,Zewen Li,Junqing Wei,Zhitang Song,Kailiang Zhang
As an emerging 2D-layered semiconductor material, the Bi2O2Se nanosheet has shown great application potential in the field of electronics and optoelectronics due to its high carrier mobility, superior air stability, and tunable bandgap. However, the mechanism of controllable synthesis of Bi2O2Se nanosheets is still unclear, and further basic research and applications are urgently needed in the field of photovoltaics. In this paper, Bi2O2Se nanosheets were prepared based on the “dual-source independent control” method, and photodetectors were demonstrated on Si/SiO2. The device has a mobility of 258.6 cm2 V–1 s–1, responsivity of 8030 A/W at 532 nm (0.32 mW/cm2), and detectivity of 1.972 × 1011 Jones, and the detector obtains highly stable and recoverable properties with multiple laser switches. The modulation mechanism of Bi2O2Se-based photodetectors is then explored based on the I–V characteristics of photodetectors and photoconductivity effect solutions.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Optical Materials
·
2024
·Vol. 12
·期 15
·2302918
·
IF 8
Abida Perveen,Yubing Xu,Syed Muhammad Abubakar,Premkumar Sellan,Wang Xin,Fawad Saeed,Sajid Hussain,Byung Seong Bae,Jianming Zhou,Ying Zhu,Wei Lei
The perovskite single crystals (PSC) produced by solution-processed metallic ions doping have a thick p–n junction (greater than 10 µm). Meanwhile, to achieve high responsivity, the carrier drift length (µτE) has to be larger than the dimensions of the detector. If the p–n junction is quite thick, a high bias voltage is required. For the practical application of photodiode, it is imperative to find a means to generate a thin p–n junction. A productive technique is suggested for forming a thin p–n junction by diffusing metallic ions, resulting in a longer drift length of the carrier than the depletion width. Thinner p–n junction leads to reduced dark current density (0.5 µA cm −2 ), low trap density (5.71 × 10 8 cm −3 ), high mobility (417 cm 2 V −1 s −1 ), and hence increased responsivity (77.69 A W −1 ) for 30 µW cm −2 UV illumination under a low applied voltage of −15 V. A quick response time with a rise/fall duration of 22 ms/30 ms under 0 V and long-term stability for over 3 months in ambient airis achieved. To comprehend the performance with the thinner p–n junction-based photodiodes, the results under UV–Vis illumination are examined and compared. The outcomes hint at a method that holds promise for producing efficient photodiodes.
研究领域:
材料科学
·
光电技术
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Yujie Yan,Qizhen Chen,Xiumei Wang,Yaqian Liu,Rengjian Yu,Changsong Gao,Huipeng Chen,Tailiang Guo
Organic phototransistors (OPTs) have attracted enormous attention because of their promising applications in sensing, communication, and imaging. Currently, most OPTs reported utilize field-effect transistors (FETs) with relative long channel length which usually has undesired amplification because of their inherent low transconductance originated from their low channel capacitance, limiting the further improvement of performance. Herein, a vertical channel hybrid electrochemical phototransistor with a nanoscale channel and large transconductance (VECPT) is invented for the first time to achieve ultrahigh photoresponsivity along with a fast response speed. Benefiting from the nanoscale channel length and large transconductance, the photo-generated carriers in channel can be efficiently dissociated, transported, and amplified into the enlarged photocurrent output. Therefore, the devices deliver substantially improved optoelectronic performances with a photoresponsivity as high as ≈2.99 × 107 A/W, detectivity of ≈1.49 × 1013 Jones, and fast-speed response of ≈73 μs under a low voltage of 1 V, which are superior to those of the reported OPTs based on FETs. Moreover, the in situ Kelvin probe microscopy is performed to characterize the surface potential of device systems for better elucidating the photosensing mechanism. Furthermore, taking advantage of its excellent optoelectronic performance, an ultraviolet light monitoring system is constructed by integrating VECPT with a light-emitting diode, which also shows the real-time, high-sensitive, and controllable photoresponse threshold properties. All these results demonstrate the great potential of these electrochemical phototransistors and provide valuable insights into the design of the nanoscale channel length device system for high-performance photodetection.
研究领域:
材料科学
·
电子工程
·
光电器件
✓ 已验证
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2024
·
IF 5.8
Shareen Shafique,Akeel Qadir,Taimoor Iqbal,Muhammad Sulaman,Liu Yang,Yanna Hou,Yuchen Miao,Jun Wu,Yuheng Wang,Fei Zheng,Xu Wang,Ziyang Hu
Defect-induced charge carrier recombination at the interface of charge transport layers and perovskite layer is a major limiting factor in the performance of perovskite photodetectors. Buried interface defect passivation presents a distinctive approach to reducing dark current and improving responsivity and detectivity in photodetectors. Herein, we propose a novel strategy for passivating buried interface defects by incorporating Nb 2 CT x at the perovskite/hole transport layer (HTL) interface to enhance optoelectronic performance of self-powered perovskite photodetectors. These strategies effectively improve charge transfer within the HTLs and suppress charge carrier recombination. Without an external bias, utilizing the Nb 2 CT x buried interface layer enables the achievement of exceptionally high responsivity and detectivity values of 0.23 A/W and 1.27×10 11 Jones, respectively, significantly outperforming the reference device. Moreover, our findings reveal an impressively broad linear dynamic range of approximately 140 dB, accompanied by rapid rise and fall times of 14.4 μs and 2.10 μs, respectively. This study illustrates a straightforward yet efficient approach for passivating buried interface defects using Nb 2 CT x in photodetectors, making Nb 2 CT x a promising material for applications in photodetectors, light-emitting diodes, photovoltaics, sensors, and more.
研究领域:
材料科学
·
光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
2D Materials
·
2024
·Vol. 11
·期 2
·025024
·
IF 4.5
Bo Zhang,Yunjie Liu,Bing Hu,Fuhai Guo,Mingcong Zhang,Siqi Li,Weizhuo Yu,Lanzhong Hao
Due to its large absorption coefficient and high carrier mobility, SnS exhibits strong promise in the area of optoelectronic devices. Nevertheless, the fabrication of large-area, high-quality films for SnS photodetectors (PDs) with superior photoresponse remains a formidable task, seriously limiting its further practical application. In the present study, we report a superior-performance broadband PD founded on the epitaxial SnS film. Large-area uniform SnS films were grown epitaxially on (100)-oriented KBr using magnetron sputtering technique, further exfoliated, and transferred in a wafer size to fabricated two-ends PD devices. Benefitting from high crystallization and unique photoconductive-bolometric coupling effect, the two modes of operation exhibit a wide range of spectral responses from the visible to near-infrared wavelength (405–1920 nm). Particularly noteworthy is the SnS device fabricated, which demonstrates an impressive responsivity of 95.5 A W−1 and a detectivity of 7.8 × 1011 Jones, outperforming other devices by 1–2 orders of magnitude. In addition, SnS PD shows excellent environmental durability. This work provides a robust approach to develop high-performance broadband SnS PDs, while simultaneously offering deep insight into the light–matter interactions.
研究领域:
材料科学
·
光学工程
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Nanomaterials
·
2023
·Vol. 13
·期 13
·1996
·
IF 5.3
Mutan Luo,Run Chen,Zhaowei Zhu,Chuantong Cheng,Xin Ning,Beiju Huang
A high-efficiency photodetector consisting of colloidal PbS quantum dots (QDs) and single-layer graphene was prepared in this research. In the early stage, PbS QDs were synthesized and characterized, and the results showed that the product conformed with the characteristics of high-quality PbS QDs. Afterwards, the photodetector was derived through steps, including the photolithography and etching of indium tin oxide (ITO) electrodes and the graphene active region, as well as the spin coating and ligand substitution of the PbS QDs. After application testing, the photodetector, which was prepared in this research, exhibited outstanding properties. Under visible and near-infrared light, the highest responsivities were up to 202 A/W and 183 mA/W, respectively, and the highest detectivities were up to 2.24 × 1011Jones and 2.47 × 108Jones, respectively, with light densities of 0.56 mW/cm2and 1.22 W/cm2, respectively. In addition to these results, the response of the device and the rise and fall times for the on/off illumination cycles showed its superior performance, and the fastest response times were approximately 0.03 s and 1.0 s for the rise and fall times, respectively. All the results illustrated that the photodetector based on PbS and graphene, which was prepared in this research, possesses the potential to be applied in reality.Keywords:PbS quantum dots;graphene;indium tin oxide;photodetector;high responsivity and detectivity
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2019
·Vol. 54
·期 24
·14742-14751
·
IF 3.442
Yang Tao,Li Xing,Wang Liming,Liu Yiming,Chen Kaijian,Yang Xun,Liao Lei,Dong Lin,Shan Chong-Xin
Due to their unique structure and photoelectrical properties, two-dimensional (2D) materials have attracted enormous attention on next-generation optoelectronic devices. Recently, the newly discovered 2D layered Bi 2 O 2 Se has exhibited outstanding sensitivity and optoelectronic properties. However, the performance of these 2D layered Bi 2 O 2 Se photodetectors can be limited by the high dark currents. The suitable band structure of 2D MoSe 2 can form a type-II heterojunction with Bi 2 O 2 Se, which can reduce the dark current, modulate the interlayer transition energy and induce the charge spatial separation. Herein, we demonstrated a photodetector based on the heterojunction fabricated by van der Waals assembly between Bi 2 O 2 Se and few-layer MoSe 2 , showing visible to near-infrared detection range. Moreover, our results showed that the dark current of this photodetector was significantly reduced and the I on /I off ratio was greatly improved. Importantly, it exhibited a broad detection range from 405 to 808 nm with a responsivity of 413.1 mA W −1 , a high detectivity of 3.7 × 10 11 Jones (at 780 nm) at room temperature. Compared with the 2D Bi 2 O 2 Se photodetector, the photocurrent response and recovery time in the heterojunction photodetector was greatly reduced from 1.92/1.31 to 0.79/0.49 s at room temperature. Our results showed that 2D Bi 2 O 2 Se/MoSe 2 heterojunction has a great potential for broadband and fast photodetection.
研究领域:
凝聚态物理
·
纳米光电子学
·
材料科学
·
半导体器件
·
低维材料
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）