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Materials · 2022 ·Vol. 15 ·期 17 ·5928 · IF 3.748

One-Stage Hydrothermal Growth and Characterization of Epitaxial LaMnO3 Films on SrTiO3 Substrate

Keyu Guo,Yaqiu Tao,Yunfei Liu,Yinong Lyu,Zhigang Pan

Epitaxial LaMnO3thin films were grown on SrTiO3substrate using a one-stage hydrothermal route from La(NO3)3, MnCl2and KMnO4in an aqueous solution of 10 M KOH at 340 °C. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) indicate full coverage of LaMnO3on the substrate. X-ray diffraction in the symmetric ω/2θ mode suggests the film has an out-of-plane preferred orientation along the [001] direction of the substrate. The LaMnO3epitaxial thin film growth mechanism is proposed based on the analysis of the atomic sharp interface formed between LaMnO3and the SrTiO3substrate, as seen by aberration−corrected scanning transmission electron microscopy (AC−STEM) imaging in combination with electronic energy loss spectroscopy (EELS). Compared with the conventional vapor deposition methods, the one-stage hydrothermal route opens up a new way to fabricate complex oxide epitaxial heterostructures.Keywords:LaMnO3;hydrothermal;epitaxy;thin film;interface;strain

CAS / MDL: 10277-43-7
研究领域: 材料科学 · 物理学
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ADVANCED MATERIALS · 2013 ·Vol. 25 ·期 40 ·5750-5755 · IF 14.829

Epitaxial ZnO Nanowire-on-Nanoplate Structures as Efficient and Transferable Field Emitters

Jizhong Song,Sergei A. Kulinich,Jian Yan,Zhigang Li,Jianping He,Caixia Kan,Haibo Zeng

Graphical Highly epitaxial ZnO nanowire-on-nanoplate structures as efficient and transferable electron field emitters are reported here. Well-faceted ZnO nanoplates can be used as efficient substrates for the epitaxial growth of nanowires with a sharp and high-quality interface, which significantly improves its field emitter performance. Because of its scalable preparation, high performance and facile transfer, the novel material is of high potential for applications in various optoelectronic devices.

CAS / MDL: 7782-42-5 1314-13-2
研究领域: 材料科学 · 纳米技术
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Materials · 2024 ·Vol. 17 ·期 11 ·2758 · IF 3.1

Hydrothermal Growth and Orientation of LaFeO3 Epitaxial Films

Guang Xian,Tongxin Zheng,Yaqiu Tao,Zhigang Pan

LaFeO3thin films were successfully epitaxially grown on single-crystalline SrTiO3substrates by the one-step hydrothermal method at a temperature of 320 °C in a 10 mol/L KOH aqueous solution using La(NO3)3and Fe(NO3)3as the raw materials. The growth of the films was consistent with the island growth mode. Scanning electronic microscopy, elemental mapping, and atomic force microscopy demonstrate that the LaFeO3thin films cover the SrTiO3substrate thoroughly. The film subjected to hydrothermal treatment for 4 h exhibits a relatively smooth surface, with an average surface roughness of 10.1 nm. X-ray diffraction in conventional Bragg–Brentano mode shows that the LaFeO3thin films show the same out-of-plane orientation as that of the substrate (i.e., (001)LaFeO3||(001)SrTiO3). The in-plane orientation of the films was analyzed by φ-scanning, revealing that the orientational relationship is [001]LaFeO3||[001]SrTiO3. The ω-rocking curve indicates that the prepared LaFeO3films are of high quality with no significant mosaic defects.

CAS / MDL: 7782-61-8 10277-43-7
研究领域: 材料科学 · 物理化学
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ACS Applied Optical Materials · 2024 · IF 0

Epitaxial Growth of Submillimeter-Thick CH3NH3PbBr3 Perovskite Films via Nitrogen-Regulated Solvent Extraction during the Blade-Coating Process for Sensitive Direct X-ray Detection

Min Yang,Xi Wang,Nan Li,Jiatian Cheng,Chengzhi Xue,Ziwei Xu,Depeng Chu,Xiaojie Zhang,Yucheng Liu,Zhou Yang,Shengzhong Frank Liu

Due to their exceptional responses to X-ray exposure, lead halide perovskites are recognized as ideal candidates for high-spatial-resolution X-ray detectors. However, an effective method to deposit a large-area, submillimeter-thick, dense perovskite film for X-ray detection has been lacking. In this study, a strategy that combines saturated-solution-induced epitaxial growth with a large-area blade-coating process has been developed to produce large-size, submillimeter-thick CH3NH3PbBr3 perovskite films. The successive deposition of a saturated precursor film does not dissolve the underlying perovskite film. Instead, it promotes epitaxial crystal growth by controlling the crystal growth rate over the nucleation rate. The obtained films exhibit a columnar grain structure with fewer pinholes and negligible residual lattice strain. As a result, under an X-ray source with a working voltage of 40 kV, the obtained thick CH3NH3PbBr3 film achieves X-ray sensitivity of up to 1938 μC Gyair–1 cm–2 under −3 V bias, a reduced dark current drift of 1.78 × 10–4 nA s–1 V–1, and a detection limit of 47 nGyair s–1 under a −2 V bias; all the above are among the best performances reported for the CH3NH3PbBr3-based X-ray detectors. Using the point-to-point current scanning method, a clear X-ray image could be obtained. This study presents an effective approach for producing thick, dense, and crack-free perovskite films directly on substrates for future X-ray detection applications.

研究领域: 材料科学 · 核医学成像
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JOURNAL OF MATERIALS CHEMISTRY · 2012 ·Vol. 22 ·期 21 ·10665-10671 · IF 5.968

Epitaxial TiO2/SnO2 core–shell heterostructure by atomic layer deposition

Anmin Nie,Jiabin Liu,Qianqian Li,Yingchun Cheng,Cezhou Dong,Wu Zhou,Peng Wang,Qingxiao Wang,Yang Yang,Yihan Zhu,Yuewu Zeng,Hongtao Wang

Taking TiO2/SnO2 core–shell nanowires (NWs) as a model system, we systematically investigate the structure and the morphological evolution of this heterostructure synthesized by atomic layer deposition/epitaxy (ALD/ALE). All characterizations, by X-ray diffraction, high-resolution transmission electron microscopy, selected area electron diffraction and Raman spectra, reveal that single crystalline rutile TiO2 shells can be epitaxially grown on SnO2 NWs with an atomically sharp interface at low temperature (250 °C). The growth behavior of the TiO2 shells highly depends on the surface orientations and the geometrical shape of the core SnO2 NW cross-section. Atomically smooth surfaces are found for growth on the {110} surface. Rough surfaces develop on {100} surfaces due to (100) − (1 × 3) reconstruction, by introducing steps in the [010] direction as a continuation of {110} facets. Lattice mismatch induces superlattice structures in the TiO2 shell and misfit dislocations along the interface. Conformal epitaxial growth has been observed for SnO2 NW cores with an octagonal cross-section ({100} and {110} surfaces). However, for a rectangular core ({10} and {010} surfaces), the shell also derives an octagonal shape from the epitaxial growth, which was explained by a proposed model based on ALD kinetics. The surface steps and defects induced by the lattice mismatch likely lead to improved photoluminescence (PL) performance for the yellow emission. Compared to the pure SnO2 NWs, the PL spectrum of the core–shell nanostructures exhibits a stronger emission peak, which suggests potential applications in optoelectronics.

CAS / MDL: 7440-31-5
研究领域: 材料科学 · 纳米技术
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RSC Advances · 2017 ·Vol. 7 ·期 31 ·19205-19210 · IF 3.108

Hexagonal β-Na(Y,Yb)F4 based core/shell nanorods: epitaxial growth, enhanced and tailored up-conversion emission

Jing Yan,Honghu Yao,Junhao Li,Shiman He,Qili Wu,Xianfeng Yang,Wasim Ullah Khan,Jianxin Shi,Mingmei Wu

To meet the increasing requirement, much effort has been devoted to enhance the emission intensity and tailor the emission color of rare earth phosphors. However, limited contributions have been made to the up-conversion (UC) of nanorods by complete epitaxial growth on each facet to achieve this requirement. In this study, we propose a facile epitaxial growth route to grow anisotropic hexagonal β-NaYF4:Yb3+/Ho3+@β-NaYbF4:Er3+, β-NaYF4:Yb3+/Ho3+@β-NaYF4, and β-NaYbF4:Er3+@β-NaYF4 core/shell nanorods, which were realized by adding hexagonal β-NaYF4:Yb3+/Ho3+ or β-NaYbF4:Er3+ nanorods as a core-nanostructure into a solution containing cubic α-NaYbF4:Er3+ or α-NaYF4 nanoparticles as the shell-precursor. During epitaxial growth-induced phase transformation, the precursor nanoparticles disappeared gradually in the solution and consequently corresponding β-phased shell yielded on each outer facet of each β-phased nanorod core. Eventually, the nanorod core was covered completely with a uniformly grown β-NaYbF4:Er3+ or β-NaYF4 shell. The UC emission of either β-NaYF4:Yb3+/Ho3+ or β-NaYbF4:Er3+ core can be enhanced by the outer shell due to the decrease in the number of surface defects. In addition, tailored UC emissions could be obtained by controlling the shell components and thickness, typically in the core/shell nanorods of β-NaYF4:Yb3+/Ho3+@β-NaYbF4:Er3+. The tunable colors with improved emission in these core/shell nanorods may find wider applications in multicolor labeling and anti-counterfeiting.

CAS / MDL: 35725-34-9 13494-98-9
研究领域: 材料科学 · 光学
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CHEMISTRY OF MATERIALS · 2020 · IF 9.567

Colloidal Synthesis of Giant Shell PbSe-Based Core/Shell Quantum Dots in Polar Solvent: Cation Exchange versus Epitaxial Growth

Dong Li,Xiaoli Zhang,Muhammad Ramzan,Kai Gu,Yu Chen,Jiatao Zhang,Bingsuo Zou,Haizheng Zhong

Shell thickness control of core/shell quantum dots (QDs) plays an important role in determining their optical properties as well as the corresponding device performance. PbSe-based core/shell QDs are attractive near-infrared (NIR) light emitters for photonic and optoelectronic applications. We herein report the colloidal synthesis of giant shell PbSe-based core/shell QDs through controllable reactions between preformed PbSe QDs and Cd2+ ions in polar solvents. The preformed PbSe QDs experienced cation-exchange reaction in N,N-dimethylformamide (DMF), while they underwent epitaxial growth of CdS shell in dimethyl sulfoxide (DMSO). The cation exchange of preformed PbSe QDs in DMF result in PbSe/CdSe core/shell QDs with similar size (ca. 6.3 nm) but tunable shell thickness from 0.5 to 2.9 nm. In comparison, the epitaxial growth of preformed PbSe QDs in DMSO produce PbSe/CdS core/shell QDs in DMSO with average core size of ∼5.7 nm but tunable shell thickness from 0.5 to 3.1 nm. These resulting PbSe-based core/shell QDs show tunable photoluminescence emission of 1393–1744 nm for PbSe/CdSe core/shell QDs and 1566–1719 nm for PbSe/CdS core/shell QDs. The cation exchange and epitaxial growth reactions of preformed PbSe QDs were further investigated by comparing the interactions between solvents and cation ions through nuclear magnetic resonance (NMR) measurements. The interactions between Cd2+ and DMSO are stronger than that of DMF, while the interactions between Pb2+ and DMSO are weaker than that of DMF. The difference accounts for the reaction transition from cation exchange to epitaxial growth, providing alternative route for fabricating shell controllable PbSe-based core/shell QDs.

研究领域: 材料科学 · 纳米技术 · 光学
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ACS Applied Electronic Materials · 2021 · IF 3.314

Epitaxial Growth of Quasi-intrinsic CsPbBr3 Film on a SrTiO3 Substrate by Pulsed Laser Deposition

Beilei Yuan,Haoming Wei,Jingwei Li,Yu Zhou,Fan Xu,Jinkai Li,Bingqiang Cao

In this paper, inorganic halide perovskite cesium lead bromide (CsPbBr3) films are epitaxially grown on (100)-oriented SrTiO3 substrates by pulsed laser deposition (PLD). This method has the distinctive advantages to grow high-quality films with a precise composition, designed crystalline orientation, and controlled uniform thickness. By optimizing the substrate temperatures and laser pulse numbers, (100)-CsPbBr3 films with uniform morphology are grown on a SrTiO3 substrate via a cubic-on-cubic epitaxial growth mode, which is proven by XRD investigation. Detailed photophysical spectroscopy study including femtosecond transient absorption spectra and detailed low-temperature photoluminescence spectra indicate that such epitaxial CsPbBr3 films are of very low defects in the bandgap. The temperature-dependent resistivity measurement reveals that the epitaxial CsPbBr3 films show a typical thermally activated carrier behavior with a bandgap value of 2.37 eV, which is very consistent with the optical result and indicates a quasi-intrinsic semiconductor nature of such an epitaxial film. Our results confirm that CsPbBr3 films with high crystal quality and lower defect density can be epitaxially grown with PLD for further superlattices and quantum wells.

研究领域: 材料科学 · 物理化学
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CRYSTAL GROWTH & DESIGN · 2025 · IF 3.4

Sb2Se3 Mutisegment Homostructured Nanowire Growth with a Catalyst-Free Incommensurate Heteroepitaxial Method

Yiran Wu,Jinyang Liu,Yulong Lian,Yuzhen Lian,Hongbing Cai

One-dimensional multisegment nanostructures, with their unique physicochemical properties and broad application potential in optoelectronics, have garnered significant attention. However, current synthesis methods face challenges, including strict catalyst requirements, limited control over segment dimensions, and difficulties in achieving scalable and precise fabrication. These obstacles hinder the exploration of size-dependent physical properties and advanced applications. Here, we present a catalyst-free incommensurate heteroepitaxial growth method to synthesize Sb2Se3 multisegment homostructured nanowires. Using dashed-line-like nanowires synthesized in the first step as templates, our method achieves precise control over the segment number (three to nine) and diameter, forming homostructures with distinct physical properties. The Sb2Se3 nanowires grow along the [001] direction, and their anisotropic characteristics were confirmed by angle-resolved polarization Raman spectroscopy (ARPRS). The Sb2Se3 nanowires were applied in polarization-sensitive photodetectors, demonstrating a high dichroic ratio (∼1.7) and strong anisotropic photocurrent responses. This approach provides a versatile and scalable solution for fabricating multisegment nanostructures with tailored properties, paving the way for the further exploration of size-dependent phenomena and their integration into advanced anisotropic optoelectronic devices.

CAS / MDL: 7782-49-2
研究领域: 材料科学 · 纳米技术 · 光学工程
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CRYSTAL GROWTH & DESIGN · 2023 · IF 3.8

Near-Net-Shaped Growth of Inch-Sized MAPbBr3 Bulk Crystal by the Space-Confined Seeded Solution Method

Xin Liu,Quanchao Zhang,Dou Zhao,Ruichen Bai,Yingying Hao,Bin Fang,Yinjie Ruan,Binbin Zhang,Tongyang Wang,Chongjian Zhou,Wanqi Jie,Yadong Xu

The organic–inorganic hybrid halide perovskite MAPbBr3 has been considered as a promising material in many applications; however, the bulk MAPbBr3 crystals grown by the widely adopted inverse temperature crystallization (ITC) method without forced convection reveal poor reproducibility and moderate quality. Here, we employ a near-net-shape seeded solution method to grow inch-sized MAPbBr3 crystals as a space-confined way to approach the suitable thickness and minimize the loss resulting by cutting and polishing. The rotation parameters for introducing forced convection is determined according to solute transport behavior, which is associated with the space confinement thickness and rotation rate. The as-grown MAPbBr3 crystal with good homogeneity exhibits a recorded FWHM value of 0.011° in the high-resolution X-ray diffraction rocking curve, ascribed to the lower grown-in stress and strain by the liquid-phase epitaxial growth. Finally, the MAPbBr3 semiconducting photodetector demonstrates a relatively high resistivity of 3.75 × 108 Ω·cm and superior photoresponse under 405 nm laser. The near-net-shape synthesis method with a space confinement is potentially extended to the growth of other halide perovskite bulk crystals.

CAS / MDL: 10031-22-8 6876-37-5
研究领域: 材料科学 · 光电材料 · 晶体生长技术
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MATERIALS CHARACTERIZATION · 2023 · IF 4.7

Carbide assisted in-suit growth and formation mechanism of SiC nanowires on the surface of defined carbon fibers

Hui Zhu,Bo Liu,Ling Wu,Ye Cong,Zhijun Dong,Jianguang Guo,Baoliu Li,Xuanke Li

The in-suit synthesis of SiC nanowires (SiCNWs) on carbon fibers (CFs) to produce SiC@C composites is pivotal due to their broad applications. However, it's challenging because most CFs have a microstructure unsuitable for SiCNWs nucleation. In this study, we introduced a series of carbide coatings on CFs to facilitate the growth of SiCNWs through a thermal evaporation process. It was observed that carbide coatings on CFs significantly enhance the nucleation of SiC, enabling the efficient production of SiCNWs@CF. These SiCNWs can grow directly on the carbide-coated CFs through heteroepitaxial nucleation. Carbide coatings with a cubic phase structure and a crystalline size of less than 50 nm are vital for SiCNWs formation. This carbides coating approach is beneficial not only for carbon materials but also holds potential for numerous other matrices.

CAS / MDL: 7631-86-9 7440-21-3
研究领域: 材料科学 · 纳米技术
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Physica Status Solidi-Rapid Research Letters · 2024 · IF 2.5

Epitaxial Growth of Cs3Cu2I5 Single-Crystal Arrays for UV-Responsive Neuromorphic Devices

Yang Yu,Zhonglong Zhang,Qiuchun Lu,Jiaqi Tang,Wenqiang Wu,Xun Han

Copper-based halides, a type of perovskite derivative, inherit their excellent optoelectronic properties and solution processability and also have the advantages of being nontoxic and stable. Despite the tremendous achievements of microfabrication in conventional halide perovskites, reports on copper-based halide array devices are rare due to their difficult high-quality crystallization. Here, by introducing single-crystal thin films grown by space confinement method as substrates, reliable photolithography based on their single crystals is successfully achieved and controllable homoepitaxial single-crystal arrays is demonstrated. By adjusting the substrate, angle, and growth time, the orientation, arrangement, and size of arrays could be controlled. Temperature and time are used to regulate the growth stage to obtain clean and appropriately sized arrays. ITO/Cs 3 Cu 2 I 5 /ITO neuromorphic device based on homoepitaxial arrays is developed. The variation of synaptic plasticity could be controlled by the number and frequency of light pulses. The device successfully simulated the process of “learning, forgetting, and relearning” in the human brain, demonstrating the potential of application in sensing-storage-computing-integrated devices.

研究领域: 材料科学 · 光电子学 · 神经形态计算
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