ACS Applied Materials & Interfaces
·
2019
·
IF 8.456
Xiaofei Cao,Yongzhan Han,Jiankui Zhou,Weiwei Zuo,Xiao Gao,Lifeng Han,Xinchang Pang,Li Zhang,Yingliang Liu,Shaokui Cao
The ON/OFF ratio and long-term stability are two important issues for flexible organic–inorganic hybrid perovskite (OHP) resistive random access memory (RRAM) for practical applications. In this work, polyvinylammonium (PVAm) is applied to partially replace methylamine ions (MA+) to fabricate the stable and flexible polymeric OHP RRAM devices, wherein PVAm acts as nucleation sites and the template for crystalline growth of MAPbI3 to tune the microscopic perovskite structure. Simultaneously, the multiple perovskite grain interfaces are strengthened through the long-carbochain polymeric backbone, hence producing a continuous and compact perovskite film. As a result, the PVAm-modified OHP RRAM device shows remarkable enhancement of the ON/OFF ratio, long-term stability, and flexibility compared with the unmodified OHP device. Specifically, the polymeric OHP device exhibits fast and stable nonvolatile resistive switching (RS) characteristics with an ON/OFF ratio of ∼105 and a set voltage of −0.45 V under ambient conditions. Also, the distinct multilevel RS behavior can be realized in this device by controlling the compliance current in the SET process. Additionally, the unsealed polymeric OHP device manifests the striking long-term stability, which can still maintain the stable memory performance after 1 year exposure to the humid and thermal ambient environment. Furthermore, the flexible polymeric OHP device was also fabricated and affords the excellent bending endurance behavior by showing a reproducible RS property over 100-cycle bending experiments. This work provides a new perovskite-based material design strategy of polymeric OHP for stable and flexible RRAM devices with the high ON/OFF ratio.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SENSORS AND ACTUATORS B-CHEMICAL
·
2021
·
IF 7.46
Zhiyu Chen,Chao Liu,Xiaoyu Su,Wen Zhang,Xiaobo Zou
The synergy of semi-complementary aptamer couple and signal on-off ratiometric strategy is applied with multi-purpose screen-printed electrode (SPE). The homemade SPE simultaneously accommodates capacities for primary ratiometric sensing and supplementary on-chip pH monitoring. Cd 2+ aptamer performs as a molecular recognizer, in the sensing system, to provide target signal of Cd 2+ ( I Cd 2+ ). Polythionine-Au (PTh-Au) is bound to a single-strand DNA (ssDNA), semi-complementary to Cd 2+ aptamer. The [email protected] , self-assembled with Cd 2+ aptamer by hybridization, can be competitively replaced by Cd 2+ , causing a loss in I PTh-Au . Thus, the target signal ( I Cd 2+ ) and the reference signal ( I PTh-Au ) well compose a ratiometric sensing system. Modifications and sensing behaviors are comprehensively validated with laboratorial methods from morphology, spectroscopy and electrochemistry. The proposed aptasensor presents considerable advances in analytical performances. During interference study and stability examination, the ratiometric signal, I Cd 2+ /I PTh-Au , is proven a more reliable indicator than solo-signal readout. Following a log-linear relationship, this sensor provides wide dynamic range, as 2 × 10 −3 ∼8 × 10 −1 mg L −1 , to target Cd 2+ . Limit of detection is well found as 7 × 10 −4 mg L −1 based on experimental criterion. The proposed sensor is consequently applied for Cd 2+ determination in real mussel samples. Recommend results meet well with those from ICP-MS and recovery test.
研究领域:
分析化学
·
环境科学
·
生物传感技术
✓ 已验证
DOI
高影响因子
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
·
2021
·
IF 3.382
Wei-Long Xu,Hongchun Yuan,Xiao-Yu Yang,Yannan Zhang,Min Zheng
Tin-based perovskites are the promising alternative applications in environment-friendly optoelectronic devices when compared with Pb-based perovskites . All-inorganic tin-based perovskite (CsSnBr 3 ) films were prepared by chemical vapor deposition (CVD) method. The film deposited at 500 °C shows high crystalline quality with the grain size close to 1 μm and uniform surface coverage. The optical properties of CsSnBr 3 film were investigated by steady-state and time-resolved photoluminescence spectra in detail. The short photoluminescence lifetime may be attributed to the defects at the molecular level rather than the grain boundaries. Consequently, the photodetector based on CsSnBr 3 film exhibits good stability and high on/off ratio about 320.
研究领域:
材料科学
·
光电子学
·
光子学
✓ 已验证
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2025
·
IF 4.6
Youjiang Pan,Chunyan Wu,Hailong Hu,Tailiang Guo,Guojian Yang,Lei Qian,Fushan Li
Colloidal quantum dot (CQD) near-infrared (NIR) upconversion devices (UCDs) can directly convert low-energy NIR light into higher energy visible light without the need for additional integrated circuits, which is advantageous for NIR sensing and imaging. However, the state-of-the-art CQD NIR upconverters still face challenges, including high turn-on voltage (Von), low photon-to-photon (p–p) upconversion efficiency, and low current on/off ratio, primarily due to inherent limitations in the device structure and operating mechanisms. In this work, we developed a CQD NIR UCD based on a hole-only injection mechanism. Our device effectively suppresses electron injection from the cathode without hindering hole injection from the anode. As a result, the dark current of the device is reduced to a low level, which is favorable for the balance of photogenerated carriers and injected charges. Furthermore, we employed a liquid-phase ligand-exchange process to treat the PbS CQD photosensitive layer (PSL), which enhances the uniformity and charge transport capability of PSL, further optimizing the utilization of photogenerated carriers. We achieved a record high current on/off ratio exceeding 3.5 × 105 for the CQD NIR UCD. Additionally, the device exhibits a high p–p upconversion efficiency of 12.8% and a low Von of 1.8 V.
研究领域:
光电子学
·
纳米技术
·
材料科学
·
半导体器件
·
光子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
APPLIED PHYSICS LETTERS
·
2016
·Vol. 109
·期 20
·
IF 3.142
Guo Chenglei,Tian Zhen,Xiao Yanjun,Mi Qixi,Xue Jiamin
We report the transport properties of mechanically exfoliated few-layer SnSe 2 flakes, whose mobility is found to be ∼85 cm 2 V −1 s −1 at 300 K, higher than those of the majority of few-layer transitional metal dichalcogenides. The mobility increases strongly with decreased temperature, indicating a phonon limited transport. The conductivity of the semiconducting SnSe 2 shows a metallic behavior, which is explained by two competing factors involving the different temperature dependence of mobility and carrier density. The Fermi level is found to be 87 meV below the conduction band minima (CBM) at 300 K and 12 meV below the CBM at 78 K, resulting from a heavy n-type doping. Previous studies have found SnSe 2 field-effect transistors to be very difficult to turn off. We find the limiting factor to be the flake thickness compared with the maximum depletion width. With fully depleted devices, we are able to achieve a current on-off ratio of ∼10 5 . These results demonstrate the great potential of SnSe 2 as a two dimensional (2D) semiconducting material and are helpful for our understanding of other heavily doped 2D materials.
研究领域:
材料科学
·
半导体物理
·
纳米技术
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2022
·Vol. 57
·期 2
·1186-1197
·
IF 4.682
Li Yana,Li Yuqiang,Ji Yi,Wang Hong,Zhong Dingyong
Ga 2 O 3 is considered as a candidate for the preparation of solar-blind photodetectors due to its large direct band gap. Developing low-cost preparation methods of high-quality Ga 2 O 3 films is of importance for large-scale applications. In this work, we investigate the preparation of Sn doped β-Ga 2 O 3 films by using simple and cheap sol–gel method under ambient condition. It is found that Sn doping induces a growth mode transformation from \(\left( {\overline{2}01} \right)\) to \(\left( {\overline{3}11} \right)\) oriented texture on the c-plane sapphire substrates. With an optimal Sn proportion, high-quality β-Ga 2 O 3 films consisting of needle-like grains are observed. Compared with the undoped films, the Sn-doped films with needle-like grains obtained a low dark current of 0.76 nA, performed an on/off ratio as high as ~ 6000, responsivity, R of 164 mA/W and D* of 3.21 × 10 12 Jones at a bias voltage of 30 V in the configuration of metal–semiconductor–metal solar-blind deep ultraviolet detectors. This is the highest on/off ratio of Ga 2 O 3 solar-blind photodetectors fabricated by sol–gel method reported up to now and has the potential to be applied in practical use. Graphical abstract
研究领域:
材料科学
·
半导体物理
·
光电技术
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Qing Liu,Yu Qing Yang,Xingfu Wang,Weidong Song,Xingjun Luo,Jiaqi Guo,Jiang Shi,Chuan Cheng,Dongyang Li,Longfei He,Kai Li,Fangliang Gao,Shuti Li
ABSTRACT In recent years, the combination of perovskites with other materials to improve the photoelectric performance has received widespread attention. In this work, we demonstrate a hybrid heterostructure photodetector with the combination of GaN microwire array and perovskite. Compared to perovskite and GaN microwire array photodetectors, the hybrid CH 3 NH 3 PbI 3- x Cl x /GaN microwire array photodetector exhibits more excellent photoelectric performances in a wide detection range from ultraviolet to visible. Under 325 nm laser irradiation, the hybrid photodetector generates a large photocurrent (1.04 ×10 -5 A), a high on/off ratio (>10 4 ), a fast response time (raise time of 0.66 ms and decay time of 0.71 ms), and higher responsivity , detectivity. Meanwhile, when the perovskite is combined with the GaN microwire array, the device also has a higher photocurrent, on/off ratio, and faster photoresponse compared with the perovskite photodetector in the visible light region. This is interpreted as the effective separation photogenerated carriers at the hetero-interface, and the directional transfer of carriers within the one-dimensional GaN microwire array. This study sheds light on fabricating high-performance heterostructures photodetectors.
研究领域:
材料科学
·
光子学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 33
·期 28
·2214544
·
IF 19
Yutie Gong,Jiayu Zhao,Zhenzhen Li,Jing Huang,Yang Zhang,Lijie Dong,Chuanxi Xiong,Ming Jiang
Dielectric switching materials are prospective candidates for smart electronic/electrical applications, and high dielectric switching ratios are crucial for their practical applications. However, the substantial improvement of the dielectric switching ratio is limited by the available dielectric switching mechanisms, and obtaining high dielectric switching ratios is a major challenge. Here, an unparalleled dielectric switching effect is reported in a water-in-oil emulsion system, caused by dual polarization synergy below the dielectric transition temperature in concert with suppression of the electrode polarization above the dielectric transition temperature. The synergistic dielectric switching effect of interfacial polarization and electrode polarization endows the emulsion with unprecedentedly high dielectric switching ratios. The highest room temperature dielectric switching ratio of this emulsion system up to 2.86 × 10 6 at 20 Hz, is four orders of magnitude higher than the highest switching ratio reported so far. The unparalleled high dielectric switching ratio, reliable cycle stability, good frequency adaptability, and satisfactory scalability make the inorganic salt solution/octadecane emulsions potentially excellent candidates for high-sensitivity room-temperature smart switching or sensing devices.
研究领域:
材料科学
·
电气工程
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
NATURE MATERIALS
·
2025
·Vol. 24
·期 9
·1375-1386
·
IF 38.5
Zhang Teng,Chen Youxin,He Zhiyan,Liu Qinran,Chen Le,Wang Kai,Chen Wenzhe,Wang Kunchan,Ye Xiaowo,He Zhuoyang,Zhang Yuyang,Zhang Yanming,Liao Chenghao,He Yuan,Gao Wenpei,Zhang Tianyu,Hu Bei,Jiang Shenghao,Shi Fangyuan,Gao Shengguang,Li Xinyue,Chen Changxin
Black phosphorus nanoribbons (BPNRs) with a tunable bandgap and intriguing electronic and optical properties hold strong potential for logic applications. However, efficiently producing high-quality BPNRs with precise control over their size and structure remains a great challenge. Here we achieved high-quality, narrow and clean BPNRs with nearly atomically smooth edges and well-defined edge orientation at high yield (up to ~95%) through the sonochemical exfoliation of the synthesized bulk BP crystals with a slightly enlarged lattice parameter along the armchair direction. The resulting BPNRs have widths centred at 32 nm and can be as narrow as 1.5 nm, with edges consistently aligned along the zigzag direction in measured BPNRs with widths ≤340 nm. The formation of one-dimensional BPNRs with zigzag edges is attributed to the introduction of pre-stress along the armchair direction of the grown bulk BP and the application of suitable sonication conditions. The BPNR bandgap increases as the BPNR width decreases from 83 nm to 13 nm, with a large bandgap of 0.64 eV for a 13-nm-wide BPNR. A typical graphene-contacted field-effect transistor fabricated with a 13-nm-wide and 10-nm-thick BPNR can achieve an on/off ratio of 1.7 × 10 6 , mobility of 1,506 cm 2 V −1 s −1 and on-state channel conductivity of 1,845 µS. The devices also exhibit excellent photodetection performance. Our method opens up a route to produce BPNRs with high material quality and defined edge chirality for fundamental studies and practical applications in electronic and optoelectronic fields.
研究领域:
材料科学
·
纳米技术
·
半导体物理
·
电子器件
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
OPTICAL MATERIALS
·
2023
·
IF 3.9
Yuexu Xiong,Taihong Chen,Wenlin Feng
The thickness and area of WS 2 are critical for the optoelectronic response and bandgap. It is necessary to develop a large-area WS 2 with an adjustable bandgap to obtain a high-performance optoelectronic device. In this work, large-area continuous WS (2-2x) Se 2x ( x = 0, 0.265, 0.39, 0.55) thin films were synthesized by the chemical vapor deposition . The bandgap range was adjusted by controlling the selenization time. Furthermore, the photodetectors Ag/WS (2-2x) Se 2x /Ag with different Se compositions were explored. And a high-performance photodetector Ag/WS 0.9 Se 1.1 /Ag was constructed with a wide detection range of ultraviolet–visible–near infrared band. The responsivity, specific detection, and on/off ratio are 1.5 A/W,1.20 × 10 11 Jones, and 2.9 × 10 5 at 365 nm, and the response time is 1.92 μs. This work provided a new synthetic method for growing bandgap-tunable transition metal disulfide and a new option for photoelectric detection in the ultraviolet–visible–near infrared region.
研究领域:
材料科学
·
光电技术
·
纳米技术
✓ 已验证
DOI
高影响因子
Nanomaterials
·
2022
·Vol. 13
·期 1
·39
·
IF 5.719
Yuan-Dong Xu,Yan-Ping Jiang,Xin-Gui Tang,Qiu-Xiang Liu,Zhenhua Tang,Wen-Hua Li,Xiao-Bin Guo,Yi-Chun Zhou
Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be improved by optimizing the formation and rupture of conductive filaments. In this study, a hafnium oxide-/aluminum-doped zinc oxide/hafnium oxide (HfO2/Al-ZnO/HfO2) tri-layer structure device was prepared using the sol–gel method. The oxygen-rich vacancy Al-ZnO layer was inserted into the HfO2layers. The device had excellent RS properties, such as an excellent switch ratio of 104, retention of 104s, and multi-level storage capability of six resistance states (one low-resistance state and five high-resistance states) and four resistance states (three low-resistance states and one high-resistance state) which were obtained by controlling stop voltage and compliance current, respectively. Mechanism analysis revealed that the device is dominated by ohmic conduction and space-charge-limited current (SCLC). We believe that the oxygen-rich vacancy concentration of the Al-ZnO insertion layer can improve the formation and rupture behaviors of conductive filaments, thereby enhancing the resistive switching (RS) performance of the device.
研究领域:
材料科学
·
电气工程
·
纳米技术
·
半导体器件
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2018
·
IF 3.779
Xue-Xia Chen,Xu-Hua Xiao,Zhi-Feng Shi,Rui Du,Xin-Jian Li
Using silicon nanoporous pillar array (Si-NPA) as substrate, a kind of GaN/Si nanoheterostructure (GaN/Si-NPA) is prepared by depositing GaN nanocrystallites on Si-NPA with chemical vapor deposition method. The morphology characteristics and optical properties of GaN/Si-NPA are investigated systematically. Based on GaN/Si-NPA, a self-powered ultraviolet (UV) photodetector (PD) with device structure of ITO/GaN/Si-NPA/ sc -Si/Ag is constructed by depositing ITO on GaN layer and silver on single crystal silicon , respectively. At zero bias voltage without an external power supply, GaN/Si-NPA exhibits a responsivity of 0.072 mA/W, a high current on/off ratio of ∼10 4 (16 μW/cm 2 ) and fast response speeds of 39.98/40.10 ms under an UV light irradiation at 305 nm. The high performance of GaN/Si-NPA is attributed to the built-in electric field in the heterojunction , which is interpreted via building the energy-band diagrams. The results illustrate that GaN/Si-NPA might be a suitable material system for self-powered UV PDs.
研究领域:
材料科学
·
光子学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）