ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Jiuzhou Ren,Hui Liang,Jiacheng Li,Ying Chen Li,Wei Mi,Liwei Zhou,Zhe Sun,Song Xue,Gangri Cai,Jin Shi Zhao
Memristors will be critical components in the next generation of digital technology and artificial synapses. Researchers are investigating innovative mechanistic understanding of the memristor devices based on low-cost, solution-processable, and organic materials as promising candidates. Here, we demonstrate a novel polyelectrolyte-based memristor device, which is simply prepared by spin-coating poly(acrylic acid) (PAA) and polyethylenimine (PEI) on an indium tin oxide (ITO) substrate followed by a magnetron sputtering of the ITO as the top electrode. The device has a potential to achieve excellent resistive switching (RS) performance and synapse functionality as well as greater flexibility and transmittance when compared to the oxide-based memories. An on/off resistance ratio of 50 can be maintained without degradation for up to 20 000 cycles (flat state) and over 4000 cycles (bending to a 2 mm radius 10 000 times) in the DC sweep mode. Moreover, the device performs various synaptic functions, including spike-timing-dependent plasticity, pulse pair plasticity, and short-term and long-term plasticity in the potentiation and depression processes. The counterions and two oppositely charged polyelectrolyte chains can move in and out of each other depending on the applied electrical potential (pulse), resulting in a change in the potential drop at the interface of the polyelectrolyte bilayer and its electrodes, which can be attributed to the RS mechanism and various synaptic functions. This insight may accelerate the technological deployment of the organic resistive memories.
研究领域:
材料科学
·
神经形态计算
·
电子工程
✓ 已验证
DOI
PubMed
高影响因子
Advanced Electronic Materials
·
2020
·Vol. 6
·期 5
·2000035
·
IF 6.593
Ruiqi Guo,Linxing Zhang,Jie Meng,Aqiang Liu,Jifeng Yuan,Kaibo Zheng,Jianjun Tian
Compared to analogous bulk materials, colloidal nanocrystals have presented a powerful platform for building up electronic devices on the nano/micrometer scale and flexible portable electronic apparatus with the benefits of solution-based processing approach at room temperature. Herein, memristors based on CuInSe 2 (CISe) colloidal nanocrystals prepared using a solution-based process at room temperature are constructed. The memristors exhibit obvious bipolar resistive switching performance with a high–low resistance ratio larger than 5.7 and a steady retention time over 10 4 s. This is attributed to the copper ion redox reaction and the migration of these ions under an applied electric field. When the SET voltage is reached, the ions are separated from one of the electrodes, and the memristor changes from a low-resistance state (LRS) to a high-resistance state (HRS). Conversely, when the voltage reaches the RESET voltage, the memristor switches from a HRS to a LRS. In addition, the flexible memristor can be fabricated by spincoating nanocrystal solution onto polyethylene terephthalate (PET) at room temperature, showing excellent reproducibility of the performance including 100 times of continuous operation, 10 4 s of reproducible reading, 600 times of antifatigue testing, and thermal stability up to 95 °C. The flexible devices demonstrate promising applications for portable electronic devices.
研究领域:
材料科学
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纳米技术
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电子工程
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Communications
·
2023
·
IF 3.8
Yusheng Yang,Bai Sun,Guangdong Zhou,Chuan Ke,Jie Zhang,Yongzan Zhou,Shuangsuo Mao,Jiajia Qin,Yong Zhao
Since memristors have shown great application prospects in non-volatile memory, neural synapse, brain-like chips, artificial intelligence (AI) and quantum computers, the research of memristors has received extensive attention. In this work, the resistive switching (RS) device with Ag/SrTiO 3 (STO)/Ti structure was fabricated, and it can significantly improve the RS performance of device by doping Mn ions into STO to replace part of Ti ions . That is to say, the Ag/Mn-doped SrTiO 3 (SMTO)/Ti device exhibits larger resistance window and better retention at room temperature. Finally, through in-depth mechanistic analysis, a physical model of the conducting filament and Schottky emission was established to understand the charge transport mechanism and RS behavior of the device. In particular, it provides favorable factors for the migration of ions and electrons through the Mn doping because the substitution of Mn for Ti ions reduces the volume of the STO crystal while distorting its crystal shape since the ionic radius of Mn is smaller than that of Ti. This work provides an important way to improve the RS properties of ABO 3 -type perovskite-based resistive random access memory (RRAM), and helps to explore the cutting-edge applications of high-performance RS devices in information processing and AI.
研究领域:
材料科学
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电子工程
·
人工智能
✓ 已验证
产品关联
DOI
高影响因子
Nanomaterials
·
2022
·Vol. 12
·期 7
·1072
·
IF 5.719
Lei Li
Natural biomaterials applicable for biomemristors have drawn prominent attention and are of benefit to sustainability, biodegradability, biocompatibility, and metabolism. In this work, multi-bit biomemristors based on the neutral polysaccharide dextran were built using the spin-casting method, which was also employed to explore the effect of dextran on the ternary biomemristic behaviors of dextran–chitosan nanocomposites. The doping of 50 wt% dextran onto the bio-nanocomposite optimized the ratio of biomemristance in high-, intermediate-, and low-resistance states (105:104:1). The interaction between dextran and chitosan (hydrogen-bond network) was verified by Fourier transform infrared (FTIR) and Raman spectroscopy analysis; through this interaction, protons derived from the self-dissociation of water may migrate under the electric field, and so proton conduction may be the reason for the ternary biomemristic behaviors. Observations from X-ray diffraction (XRD), thermogravimetric analysis (TGA), and differential scanning calorimetry (DSC) analysis displayed that the 50 wt% dextran/50 wt% chitosan nanocomposite had the greatest amorphous ratio as well as the highest decomposition and peak transition temperatures in comparison with the other three dextran–chitosan nanocomposites. This work lays the foundation for neutral biomaterials applied to green ultra-high-density data-storage systems.
研究领域:
材料科学
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生物工程
✓ 已验证
DOI
高影响因子
NANOTECHNOLOGY
·
2024
·Vol. 35
·期 19
·195708
·
IF 2.9
Xiaofang Zhang,Ke Wang,Zhenyu Li,Juanjuan Qi,Dongke Li,Jianqiang Luo,Jian Liu
Recently, the lead-free double perovskite Cs2AgBiBr6 has been considered as a promising candidate for next-generation nonvolatile memory and artificial synapse devices due to its high stability and low toxicity compared to its lead-based counterparts. In this work, we developed a simple and effective method to produce high-quality lead-free double perovskite Cs2AgBiBr6 thin films without pinholes and particles by applying a low-pressure assisted method under ambient condition with a relative humidity (RH) of about 45%. The formation of pinholes and Ag precipitation in the perovskite Cs2AgBiBr6 films is effectively suppressed by the proper ratio of N,N-dimenthylformamide (DMF) mixed in dimethyl sulfoxide (DMSO) solvents. Furthermore, the grain size of the Cs2AgBiBr6 films can be significantly increased by increasing the post-annealing temperature. Finally, a sandwiched structure memristor with an ITO/Cs2AgBiBr6/Ta configuration was successfully demonstrated, featuring ultralow operation voltage (VSet ∼ 57 ± 23 mV, VReset ∼ −692 ± 68 mV) and satisfactory memory window (the ratio of RHRS/RLRS ∼ 10 times), which makes it suitable for low-power consumption information storage devices.
研究领域:
材料科学
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电子器件
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纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Nanoscale
·
2023
·Vol. 16
·期 3
·1102-1114
·
IF 6.7
Song He,Xingyu Yu,Juanjuan Wang,WenKang Zhong,Baochang Cheng,Jie Zhao
Emerging resistive switching devices hold the potential to realize densely packed passive nanocrossbar arrays, suitable for deployment as random access memory devices (ReRAMs) in both embedded and high-capacity storage applications. In this study, we have engineered ReRAMs comprising ITO/(UVO-treated) amorphous ZnO (a-ZnO)/MAPbI3/Ag which effectively mitigate cross-talk currents without additional components. Significantly, we successfully executed a comprehensive set of 12 distinct 2-input sequential logic functions in a single halide perovskite ReRAM unit for the first time. Furthermore, these logic functions are devoid of any dependency on external light sources, entail merely 1 or 2 logic steps, and showcase symmetrical operability. A superior resistive switching behavior was achieved by harmonizing the charge transport within the bulk MAPbI3 and the tunneling barriers at the interfaces. The outcomes indicate progress in mitigating cross-talk and executing multiple logic functions within a single halide perovskite ReRAM unit, offering a new perspective for the advancement of halide perovskite ReRAMs.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Lin Zhu,Chu-Yi Zhang,Li Gao,Li-Ling Fu,Chen Wang,Yan-Qiang Cao,Wei-Min Li,Ai-Dong Li
With the rapid development of artificial intelligence, the need to mimic biological functions has become increasingly important for completing complex tasks and adapting to challenging external environments. Memristors, recognized for their biological-like capabilities, have emerged as promising candidates for neuromorphic artificial electronic devices, sparking significant research interest. In this study, we drew inspiration from neurotransmitters in the human brain and selected essential amino acids as organic components to construct biomimetic hybrid films. Using cysteine (Cys) as the organic precursor, titanium-based cysteine hybrid thin films were successfully synthesized via molecular layer deposition (MLD). In situ quartz crystal microbalance measurements confirmed that the MLD process of Ti-Cys followed a self-limiting surface reaction with a growth rate of approximately 0.29 Å per cycle at 135 °C. The stability of the hybrid films was extensively examined, demonstrating excellent durability in both water and air. The potential of these biomimetic hybrid films as resistive functional layers was also explored. A vertically integrated Pt/Ti-Cys/TiN device exhibited reproducible volatile switching behavior, with gradual changes observed during the set/reset process. The resistive switching mechanism of these Ti-Cys hybrid-based devices is mainly governed by charge trapping and de-trapping processes. The volatility of the hybrid memristor devices originates from the trapped electron relaxation/diffusion from shallow traps after the removal of the external bias. Notably, the device successfully emulated bio-pain sensation and synapse functions, indicating that these biomimetic hybrid films hold great potential for the development of artificial sensory systems.
研究领域:
材料科学
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神经形态工程
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生物医学工程
✓ 已验证
产品关联
DOI
高影响因子
Surfaces and Interfaces
·
2025
·
IF 6.3
Zebin Zheng,Xu Yang,Lin Lv,Zhaoqing Xia,Yukai He,Xunying Wang,Wenjing Dong,Hanbin Wang,Guokun Ma,Houzhao Wan,Hao Wang
Application of two-dimensional MXenes (Ti 3 C 2 T x )-based memristors in neuromorphic computing is restricted due to the unsatisfied power consumption, consistency and tolerance, and the indistinct resistive switching mechanism. Herein, an elaborately designed Al/Ti 3 C 2 T x /SnO 2 /ITO memristor to alleviate the above issues, and the device exhibits a boosted switching ratio of about 10 3 , excellent durability over 500 cycles, and a switching voltage of <0.6 V, and shows good retention characteristics. Theoretical analysis manifests that the insertion of the SnO 2 layer promotes the formation and rupture of conductive filaments as the optimized local electric field and the concentration gradient of oxyanions tremendously favors oriented ionic migration and reduces the transition voltage. This work not only provides a feasible and effective way to enhance the memristive performance of two-dimensional materials but also further demonstrates the advantages of two-dimensional materials in neural network computing architectures.
研究领域:
材料科学
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神经网络计算
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电子工程
✓ 已验证
产品关联
DOI
高影响因子
Science China-Materials
·
2024
·
IF 6.8
Gong Jiaqi,Ji Shilei,Li Jintian,Wei Hudie,Mao Weiwei,Hu Jing,Huang Wen,He Xuemin,Li Xing’ao,Chu Liang
Memristors have great potential in neural network computation. Perovskite memristors exhibit excellent resistive-switching (RS) properties between high resistance state (HRS) and low resistance state (LRS) state under applied voltage due to the extraordinary ion migration and superior charge transfer. However, the stability issue of traditional three-dimensional (3D) perovskites is still challenging. Here, one-dimensional (1D) (CH 3 ) 3 SPbI 3 perovskite passivation layer was in-situ formed on 3D perovskite film, which was further applied in stable synaptic memristor. The memristor was provided with three resistance states due to the heterojunction electric field coupled with ion migration. The on/off ratio of memristors was obviously improved from 10 to over 60. The RS characteristics of 3D/1D perovskite memristor remained unchanged after 10 3 s read and 300 switching cycles. The 3D/1D perovskite memristor effectively exhibited versatile synaptic plasticity behaviors including long-term potentiation, long-term depression and paired-pulse facilitation by controlling the input voltages. Notably, the novel device provides a new candidate for next-generation neuromorphic computing.
研究领域:
材料科学
·
电子工程
·
神经科学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Jian Liu,Ying Nie,Xiaolong Zhou,Juanjuan Qi,Dongke Li,Jianqiang Luo,Ke Wang
Lead-free Cs3Bi2Br9 perovskite has emerged as a promising candidate for memristor and artificial synapse devices due to its high environmental stability and low toxicity compared to lead-based alternatives. In this work, we successfully prepared a high-quality Cs3Bi2Br9 perovskite film via simple spin-coating method combined with low-pressure assisted treatment. Based on the obtained Cs3Bi2Br9 film, a memristor with the structure of W/Cs3Bi2Br9/ITO was fabricated. The memristor demonstrated excellent resistive switching performance, including analog-switching behavior, high environmental stability (> 11 months), low operating voltages (VFORMING ~ 0.65 V, VSET ~ 0.53 ± 0.08 V, and VRESET ~ −0.83 ± 0.11 V), fast switching speed (< 1 μs), and long switching endurance (> 1100 cycles). Furthermore, the synaptic plasticity such as short-term plasticity, long-term plasticity, and synaptic weight potentiation and depression were successfully simulated by pulse-train measurement. Finally, a Fully Connected Neural Network built with the W/Cs3Bi2Br9/ITO memristor can obtain an accuracy of about 90% in recognizing handwritten digits. The results indicate that the lead-free Cs3Bi2Br9-based memristor has great potential for high-stability, cost-effective, eco-friendly, and low-power consumption nonvolatile memory and neuromorphic computing applications.
研究领域:
材料科学
·
神经形态计算
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Guoheng Xu,Hangyuan Cui,Li Wang,Miliang Zhang,Wenchao Liu,Tingting Mei,Bin Wu,Changjin Wan,Kai Xiao
The signal transmission utilizing ions as carriers provides the brain with efficient and outstanding computational capability. The controllable ion transport in neurons relies on a multiplicity of ion channels, which have ångström (Å) dimensions. The interactions between ions and channel walls contribute to their nonlinear ion transport behavior, which can be manifested as natural memory resistors, i.e., memristors. However, it remains a great challenge to understand the relationship between the nonlinear ion transport behaviors of different solid-state ionic memristors and artificial ion channel properties. Here, we present two different unipolar and bipolar ionic memristors based on artificial Å-scale channels in polymeric membranes with varying surface charge densities. The resistive switching mechanism of ionic memristors is attributed to synergistic energy barriers arising from size exclusion and interactions between ions and channel walls. The synaptic functions were mimicked by configuring synaptic devices using ionic memristors, which can be used to stimulate artificial neural network algorithms for energy-efficient image recognition. Our results open a pathway for revealing the nonlinear dynamics of fluidic memristors based on artificial Å-scale channels and realizing neuromorphic computation in aqueous media.
研究领域:
生物物理学
·
材料科学
·
神经科学
✓ 已验证
DOI
PubMed
高影响因子
Applied Materials Today
·
2024
·
IF 7.2
Lu Wang,Jiazhuang Li,Qiang He,Zimeng Zhang,Dianzhong Wen
Photoelectric memristors have the advantages of highly parallel computing and large-scale interconnection, which provides a promising method for reconfigurable logic operations and greatly promotes the development of new memory computing technology. In this paper, a photoelectric memristor was fabricated using natural gelatin and water-soluble CdSe/ZnS quantum dots with a shell structure. Under light stimulation, the device undergoes photoelectric effects in the dielectric layer, generating electron–hole pairs and causing the device to transition from a high-resistance state to a low-resistance state. Seven nonvolatile logic functions are achieved using three wavelengths of light excitation devices. Compared with traditional electrically controlled memristors, emerging photoelectric memristors are more attractive because they can integrate the advantages of photons and electrons.
研究领域:
材料科学
·
电子工程
·
计算机科学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）