Nature Communications
·
2018
·Vol. 9
·期 1
·1-11
·
IF 12.353
Liu Yucheng,Zhang Yunxia,Yang Zhou,Ye Haochen,Feng Jiangshan,Xu Zhuo,Zhang Xu,Munir Rahim,Liu Jia,Zuo Ping,Li Qingxian,Hu Mingxin,Meng Lina,Wang Kang,Smilgies Detlef-M.,Zhao Guangtao,Xu Hua,Yang Zupei,Amassian Aram,Li Jiawei,Zhao Kui,Liu Shengzhong(Frank)
Single crystalline perovskites exhibit high optical absorption, long carrier lifetime, large carrier mobility, low trap-state-density and high defect tolerance. Unfortunately, all single crystalline perovskites attained so far are limited to bulk single crystals and small area wafers. As such, it is impossible to design highly demanded flexible single-crystalline electronics and wearable devices including displays, touch sensing devices, transistors, etc. Herein we report a method of induced peripheral crystallization to prepare large area flexible single-crystalline membrane (SCM) of phenylethylamine lead iodide (C 6 H 5 C 2 H 4 NH 3 ) 2 PbI 4 with area exceeding 2500 mm 2 and thinness as little as 0.6 μm. The ultrathin flexible SCM exhibits ultralow defect density, superior uniformity and long-term stability. Using the superior ultrathin membrane, a series of flexible photosensors were designed and fabricated to exhibit very high external quantum efficiency of 26530%, responsivity of 98.17 A W −1 and detectivity as much as 1.62 × 10 15 cm Hz 1/2 W −1 (Jones).
研究领域:
材料科学
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光电子学
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纳米技术
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半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SENSORS
·
2025
·Vol. 25
·期 9
·2740
·
IF 3.5
Xuefeng Huangfu,Junyu Chen,Gaohui Ge,Jianyu Li,Jiazhen Zhang,Qinhao Lin,Hao Xu,Shu Min Wang
Due to high responsivity and wide spectral sensitivity, metal halide perovskite photodiodes have a wide range of applications in the fields of visible light and near-infrared photodetection. Specific detectivity is an important quality factor for high-performance perovskite-based photodiodes, while one of the keys to achieving high detectivity is to reduce dark current. Here, 3-fluoro phenethylammonium iodide (3F-PEAI) was used to passivate the perovskite surface and form the two-dimensional (2D) perovskite on the three-dimensional (3D) perovskite surface. The as-fabricated passivated perovskite photodiodes with 2D/3D hybrid-dimensional perovskite heterojunctions showed two orders of magnitude smaller dark current, larger open circuit voltage and faster photoresponse, when compared to the control perovskite photodiodes. Meanwhile, it maintained almost identical photocurrent, achieving a high specific detectivity up to 2.4 × 1012Jones and over the visible-near-infrared broadband photodetection. Notably, the champion photoresponsivity value of 0.45 A W−1was achieved at 760 nm. It was verified that the 2D capping layers were able to suppress trap states and accelerate photocarrier collection. This work demonstrates strategic passivation of surface iodine vacancies, offering a promising pathway for developing ultrasensitive and low-power consumption photodetectors based on metal halide perovskites.
研究领域:
材料科学
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光电技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ORGANIC ELECTRONICS
·
2016
·
IF 3.471
Yukun Wang,Dezhi Yang,Xiaokang Zhou,Saad M. Alshehri,Tansir Ahamad,Agafonov Vadim,Dongge Ma
CH 3 NH 3 PbI 3 /C 60 heterojunction photodetectors were here fabricated. The peak EQE achieves ∼80% in the visible-light range from 400 to 760 nm. Benefitting from eliminating the leakage current (PEDOT:PSS-free), extremely low dark current density (0.6 nA/cm 2 ) and high specific detectivity (2.7 × 10 13 Jones) are acquired.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Semiconductors
·
2024
·Vol. 45
·期 3
·032703
·
IF 4.8
Xinfa Zhu,Weishuai Duan,Xiancheng Meng,Xiyu Jia,Yonghui Zhang,Pengyu Zhou,Mengjun Wang,Hongxing Zheng,Chao Fan
The emergent two-dimensional (2D) material, tin diselenide (SnSe2), has garnered significant consideration for its potential in image capturing systems, optical communication, and optoelectronic memory. Nevertheless, SnSe2-based photodetection faces obstacles, including slow response speed and low normalized detectivity. In this work, photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures have been implemented through a polydimethylsiloxane (PDMS)−assisted transfer method. These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range. The photodetector based on the SnS/SnSe2 heterostructure exhibits a significant responsivity of 4.99 × 103 AW−1, normalized detectivity of 5.80 × 1012 cmHz1/2W−1, and fast response time of 3.13 ms, respectively, owing to the built-in electric field. Meanwhile, the highest values of responsivity, normalized detectivity, and response time for the photodetector based on the SnSe/SnSe2 heterostructure are 5.91 × 103 AW−1, 7.03 × 1012 cmHz1/2W−1, and 4.74 ms, respectively. And their photodetection performances transcend those of photodetectors based on individual SnSe2, SnS, SnSe, and other commonly used 2D materials. Our work has demonstrated an effective strategy to improve the performance of SnSe2-based photodetectors and paves the way for their future commercialization.
研究领域:
材料科学
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光电子学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2024
·
IF 5.8
Shareen Shafique,Akeel Qadir,Taimoor Iqbal,Muhammad Sulaman,Liu Yang,Yanna Hou,Yuchen Miao,Jun Wu,Yuheng Wang,Fei Zheng,Xu Wang,Ziyang Hu
Defect-induced charge carrier recombination at the interface of charge transport layers and perovskite layer is a major limiting factor in the performance of perovskite photodetectors. Buried interface defect passivation presents a distinctive approach to reducing dark current and improving responsivity and detectivity in photodetectors. Herein, we propose a novel strategy for passivating buried interface defects by incorporating Nb 2 CT x at the perovskite/hole transport layer (HTL) interface to enhance optoelectronic performance of self-powered perovskite photodetectors. These strategies effectively improve charge transfer within the HTLs and suppress charge carrier recombination. Without an external bias, utilizing the Nb 2 CT x buried interface layer enables the achievement of exceptionally high responsivity and detectivity values of 0.23 A/W and 1.27×10 11 Jones, respectively, significantly outperforming the reference device. Moreover, our findings reveal an impressively broad linear dynamic range of approximately 140 dB, accompanied by rapid rise and fall times of 14.4 μs and 2.10 μs, respectively. This study illustrates a straightforward yet efficient approach for passivating buried interface defects using Nb 2 CT x in photodetectors, making Nb 2 CT x a promising material for applications in photodetectors, light-emitting diodes, photovoltaics, sensors, and more.
研究领域:
材料科学
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光电子学
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半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale Research Letters
·
2022
·Vol. 17
·期 1
·1-9
·
IF 5.418
Zhou Zhuoli,Liao Guangmeng,Song Xinyu,Dai Qinyong,Sun Lei,Peng Yingquan,Wang Peng
As an important classification of photodetectors, broad spectral photodiodes are ubiquitous in the fields of industry and scientific research. Here, we reported a type of broad spectral organic–inorganic hybrid photodiodes (OIHPDs) based on planar-bulk heterojunction, which composed of 3,4,9,10-perylenetertracarboxylic dianhydride (PTCDA), copper phthalocyanine (CuPc) and fullerene (C 60 ). In our research, the dark current of the OIHPD with 10 nm C 60 film (10 nm-C 60 OIHPD) was as low as 25.6 μA, which is about 63 times smaller than the dark current of the OIHPD without C 60 film (C 60 -free OIHPD). It is considered that the significantly enhanced performance of 10 nm-C 60 OIHPD is attributed to the introduction of the C 60 film, which act as hole-blocking layer to reduce the dark current. And through the schematic energy level model combined with experimental measurements, the reason for the dark current change was well explained. Furthermore, the specific detectivity of 10 nm-C 60 OIHPD was almost one order of magnitude larger than it of C 60 -free OIHPD, and a notable enhancement of over 10 11 cm Hz 1/2 /W was obtained due to the fiercely reduced dark current. These results provide insights on how to improve the performance of organic photodiodes.
研究领域:
材料科学
·
光电探测器研究
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Nanomaterials
·
2023
·Vol. 13
·期 13
·1996
·
IF 5.3
Mutan Luo,Run Chen,Zhaowei Zhu,Chuantong Cheng,Xin Ning,Beiju Huang
A high-efficiency photodetector consisting of colloidal PbS quantum dots (QDs) and single-layer graphene was prepared in this research. In the early stage, PbS QDs were synthesized and characterized, and the results showed that the product conformed with the characteristics of high-quality PbS QDs. Afterwards, the photodetector was derived through steps, including the photolithography and etching of indium tin oxide (ITO) electrodes and the graphene active region, as well as the spin coating and ligand substitution of the PbS QDs. After application testing, the photodetector, which was prepared in this research, exhibited outstanding properties. Under visible and near-infrared light, the highest responsivities were up to 202 A/W and 183 mA/W, respectively, and the highest detectivities were up to 2.24 × 1011Jones and 2.47 × 108Jones, respectively, with light densities of 0.56 mW/cm2and 1.22 W/cm2, respectively. In addition to these results, the response of the device and the rise and fall times for the on/off illumination cycles showed its superior performance, and the fastest response times were approximately 0.03 s and 1.0 s for the rise and fall times, respectively. All the results illustrated that the photodetector based on PbS and graphene, which was prepared in this research, possesses the potential to be applied in reality.Keywords:PbS quantum dots;graphene;indium tin oxide;photodetector;high responsivity and detectivity
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2019
·Vol. 54
·期 24
·14742-14751
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IF 3.442
Yang Tao,Li Xing,Wang Liming,Liu Yiming,Chen Kaijian,Yang Xun,Liao Lei,Dong Lin,Shan Chong-Xin
Due to their unique structure and photoelectrical properties, two-dimensional (2D) materials have attracted enormous attention on next-generation optoelectronic devices. Recently, the newly discovered 2D layered Bi 2 O 2 Se has exhibited outstanding sensitivity and optoelectronic properties. However, the performance of these 2D layered Bi 2 O 2 Se photodetectors can be limited by the high dark currents. The suitable band structure of 2D MoSe 2 can form a type-II heterojunction with Bi 2 O 2 Se, which can reduce the dark current, modulate the interlayer transition energy and induce the charge spatial separation. Herein, we demonstrated a photodetector based on the heterojunction fabricated by van der Waals assembly between Bi 2 O 2 Se and few-layer MoSe 2 , showing visible to near-infrared detection range. Moreover, our results showed that the dark current of this photodetector was significantly reduced and the I on /I off ratio was greatly improved. Importantly, it exhibited a broad detection range from 405 to 808 nm with a responsivity of 413.1 mA W −1 , a high detectivity of 3.7 × 10 11 Jones (at 780 nm) at room temperature. Compared with the 2D Bi 2 O 2 Se photodetector, the photocurrent response and recovery time in the heterojunction photodetector was greatly reduced from 1.92/1.31 to 0.79/0.49 s at room temperature. Our results showed that 2D Bi 2 O 2 Se/MoSe 2 heterojunction has a great potential for broadband and fast photodetection.
研究领域:
凝聚态物理
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纳米光电子学
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材料科学
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半导体器件
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低维材料
✓ 已验证
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2024
·
IF 4.8
Zhe Liu,Jiaqi Li,Shaojie Liu,Yao Yuan,Ainong Chen,Haolin Yu,Shouxiong Wang,Jie Ding,Huajing Fang
The organic–inorganic hybrid heterojunction is introduced for the first time to break through the performance bottleneck of BiVO4-based photodetectors. Through a facile solution process, a p-n heterojunction is established at the BiVO4/PEDOT:PSS interface, and the built-in electric field is designed to separate photogenerated charge carriers. The hybrid heterojunction outputs a significantly increased photocurrent, which is 24 000 times larger than that of the bare BiVO4 thin film. The photodetector shows a satisfactory performance with a responsivity (R) and specific detectivity (D*) of 107.8 mA/W and 4.13 × 1010 Jones at 482 nm illumination. In addition to the fast response speed (100 ms), the device also exhibits an impressive long-term stability with a negligible attenuation in photocurrent after more than 700 cycles. This work provides a novel strategy to suppress carrier recombination of BiVO4, and the coupling of metal oxides and organic semiconductors opens up a new avenue for fabricating high-performance photodetectors.
研究领域:
光电子学
·
材料科学
·
半导体物理
·
纳米技术
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Zenghui Wu,Guoan Tai,Runsheng Liu,Chuang Hou,Wei Shao,Xinchao Liang,Zitong Wu
The emergence of borophene has triggered soaring interest in the investigation of its superior structural anisotropy, a novel photoelectronic property for diverse potential applications. However, the structural instability and need of a metal substrate for depositing borophene restrict its large-scale applications toward high-performance electronic and optoelectric devices. van der Waals epitaxy is regarded as an efficient technique for growing superb two-dimensional materials onto extensive functional substrates, but the preparation of stable and controllable borophene on nonmetallic substrates is still not reported. Here, we demonstrate that borophene films can be synthesized onto a mica substrate by van der Waals epitaxy, where hydrogen and NaBH4 are respectively used as the carrier gas and the boron source. The lattice structure of the as-synthesized borophene coincides with the predicted α′-boron sheet. The borophene-based photodetector shows an excellent photoresponsivity of 1.04 A W–1 and a specific detectivity of 1.27 × 1011 Jones at a reversed bias of 4 V under illumination of a 625 nm light-emitting diode, which are remarkably superior to those of reported boron nanosheets. This work facilitates further studies of borophene toward its attractive properties and applications in novel optoelectronic devices and integrated circuits.
研究领域:
材料科学
·
纳米技术
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Optical Materials
·
2025
·
IF 3.8
Xi Ran,Hang Xia,Jing Liu,Mohan Yuan,Xudong Hu,Ya Wang,Xinzheng Lan
Lead sulfide (PbS) colloidal quantum dot (CQD) photodetectors are promising devices for low-cost, high-performance, and large-area infrared imaging. For integration with readout integrated circuits (ROICs), top illumination is urgently required to ensure simultaneous light absorption and signal acquisition. However, the traditional best-performing p-on-n PbS CQD photodetectors rely on opaque top metal contacts, thus limiting the development of top-illuminated imagers. Herein, we addressed this issue by introducing a bifunctional ZnTe layer. The presence of the ZnTe layer─while allowing efficient hole collection─serves as a protective layer for the CQD layer during subsequent transparent electrode deposition. The resultant PbS CQD photodetectors based on the ZnTe layer show a specific detectivity of 2.09 × 1012 Jones at ≈1300 nm, representing approximately a 5-fold improvement over the control device (4.30 × 1011 Jones). This performance is comparable to that of the best PbS CQD photodetectors reported at similar wavelengths. The advantages of this architecture are further demonstrated by building a PbS CQD imager with a pixel array of 256 × 256, verifying the compatibility of photodetectors with ROICs.
研究领域:
光电子学
·
纳米技术
·
红外成像
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半导体器件
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材料科学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2022
·
IF 6.888
Xiao Zhao,Shimao Wang,Fuwei Zhuge,Yanan Song,Toru Aoki,Weiwei Dong,Mengyu Fu,Gang Meng,Zanhong Deng,Ruhua Tao,Xiaodong Fang
Considering the disadvantages of the common methods for CsPbBr3 single crystal growth including the high cost of the melt method and the low shape controllability of the solution method, a facile hot-pressed (HP) approach has been introduced to prepare CsPbBr3 wafers. The effects of HP temperature on the phase purity of HP-CsPbBr3 wafers and the performance of the corresponding photodetectors have been investigated. The HP temperature for preparing phase-pure, shape-regular, and dense CsPbBr3 wafers has been optimized to be 150 °C, and the HP-CsPbBr3 wafer based planar-type photodetectors exhibit an ultrasensitive weak light photoresponse. Under the illumination of a 530 nm LED with a light power density of 1.1 μW cm–2, the responsivity, external quantum efficiency, and detectivity of the devices reach 19.79 A W–1, 4634%, and 2.14 × 1013 Jones, respectively, and a fast response speed with a rise time of 40.5 μs and a fall time of 10.0 μs has been achieved.
研究领域:
材料科学
·
光电子学
·
纳米技术
·
固体物理
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）