ACS Applied Materials & Interfaces
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2023
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IF 9.5
Yanqing Wei,Yize Zhao,Yue Liu,Na Luo,Zunchang Gao,Pu Hou,Yang Liu,Yanhua Zhang,Pengfei Huo
Nanochannel ionic diodes require extremely complex and expensive fabrication processes. Polyelectrolyte ionic diodes attracted widespread attention among ionic rectification systems due to their simplicity of development and the ability to break the size limits of the nanochannel. However, enhancement of their rectification ratio is still in the exploratory stage. In this study, chitosan (CS) hydrogels and sodium polyacrylate (PAAs) hydrogels were prepared as the substrates for the heterostructured ionic diodes. 5,10,15,20-Tetrakis(4-aminophenyl)-21H,23H-porphyrin (TAPP) was selected to regulate the rectification ratio of ionic diodes. By adding 0.05 wt % TAPP to the CS hydrogel, the rectification ratio of the ionic diode can be increased to 10, which is 4 times larger than that of the undoped ionic diode. In contrast, the rectification ratio of the ionic diodes with TAPP added in the PAAs hydrogel decreases to 2. In addition, the ionic diode composed of the TAPP-doped CS hydrogel and PAAs hydrogel has the characteristics of a high open-circuit voltage. The open-circuit voltage of the 10 mm × 10 mm × 4 mm heterojunction hydrogel reached 370 mV. The ionic diodes can be used as a self-powered power supply device.
研究领域:
材料科学
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电化学
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纳米技术
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能源存储
✓ 已验证
产品关联
DOI
PubMed
高影响因子
APPLIED SURFACE SCIENCE
·
2025
·
IF 6.9
Binbin Ding,Lihan Wang,Denghui Yan,Fengyu Du,Chenyu Wang,Xiaoyan Tang,Yuming Zhang,Lianbi Li,Haoran Mu,Qingwen Song
Heterojunctions based on transition metal dichalcogenides (TMDs) and wide-bandgap semiconductors such as silicon carbide (SiC) offer significant opportunities for next-generation optoelectronic and power devices, leveraging the atomically thin, bandgap-tunable nature of TMDs and the thermal, electrical, and radiation robustness of SiC. However, achieving wafer-scale, orientation-controlled epitaxial growth of monolayer TMDs on SiC substrates remains challenging due to the large lattice mismatch and complex interface chemistry. Here, we demonstrate the epitaxial growth of 3 × 3 cm 2 monolayer (ML) –MoS 2 on 4H-SiC via chemical vapor deposition (CVD). Combined with structural characterizations and theoretical calculations, the Centimeter-scale ML-MoS 2 exhibits well-defined domain orientations of 0°, 30°, and 60° on the SiC surface. Owing to the low interfacial binding energy, the as-grown ML-MoS 2 can be readily transferred from the SiC substrate in a scalable, etch-free manner. While without any transfer process, the MoS 2 /SiC heterojunction exhibits a rectification ratio up to 10 7 and a pronounced photovoltaic effect under 340 nm and 532 nm laser illumination. These results offer insights into 2D/3D heteroepitaxy on wide-bandgap semiconductors and enable scalable integration of high-performance heterojunctions.
研究领域:
材料科学
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纳米技术
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半导体物理
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光电子学
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电子器件
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凝聚态物理
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry C
·
2021
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IF 4.126
Lixian Tian,Xianneng Song,Xi Yu,Wenping Hu
Facile modulation of the rectification behavior of a molecular junction device was achieved by humidity and alkali metal ions using a series of carboxylic acid-terminated self-assembled monolayers (COOH SAMs) on gold and eutectic gallium-indium alloy top contact (EGaIn). The rectification ratio (RR) increased significantly as the humidity (ranging from 1 to 39%) increases for an n-mercaptoalkanoic acid (HSCnO2H, n = 11, 12, 14, 16) SAM device. Meanwhile, K+/Na+, as the counterion of COO– in the same element group with H+, enhanced the RR of the SAM device as well. By the detailed study of the rectifying current–voltage (I–V) response using a theoretical model based on single-level tunneling, we found that the modulated rectification behavior of SAMs was attributed to the change in the coupling strength of the carboxylic group with the EGaIn electrode and the asymmetry factor of the junction in the presence of water and K+/Na+. Our study here suggested that the delicate electronic structure change at the molecule–(GaOx)GaIn interface played the most significant role in the modulation of the rectification performance of the SAM device. The molecule–(GaOx)GaIn interface thus offered a great research opportunity to achieve the desired function of SAM-GaIn-based molecular devices.
研究领域:
纳米技术
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材料科学
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电化学
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表面化学
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分子电子学
✓ 已验证
DOI
高影响因子
Nature Communications
·
2021
·Vol. 12
·期 1
·1-10
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IF 14.919
Zhang Xiankun,Liu Baishan,Gao Li,Yu Huihui,Liu Xiaozhi,Du Junli,Xiao Jiankun,Liu Yihe,Gu Lin,Liao Qingliang,Kang Zhuo,Zhang Zheng,Zhang Yue
The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in the all-2D Schottky junctions composed of the 2D metal 1 T′-MoTe 2 and the semiconducting monolayer MoS 2 . We show that the van der Waals integration of the two 2D materials can efficiently address the severe Fermi pinning effect generated by conventional metals, leading to increased Schottky barrier height. Furthermore, by healing original atom-vacancies and reducing the intrinsic defect doping in MoS 2 , the Schottky barrier width can be effectively enlarged by 59%. The 1 T′-MoTe 2 /healed-MoS 2 rectifier exhibits a near-unity ideality factor of ~1.6, a rectifying ratio of >5 × 10 5 , and high external quantum efficiency exceeding 20%. Finally, we generalize the barrier optimization strategy to other Schottky junctions, defining an alternative solution to enhance the performance of 2D-material-based electronic devices.
研究领域:
材料科学
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纳米技术
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半导体物理
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器件工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）