Micromachines
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2021
·Vol. 12
·期 2
·121
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IF 2.891
Yue Su,Zhaoxin Geng,Weihao Fang,Xiaoqing Lv,Shicai Wang,Zhengtai Ma,Weihua Pei
Nanoimprint technology is powerful for fabricating nanostructures in a large area. However, expensive equipment, high cost, and complex process conditions hinder the application of nano-imprinting technology. Therefore, double-layer self-priming nanoimprint technology was proposed to fabricate ordered metal nanostructures uniformly on 4-inch soft and hard substrates without the aid of expensive instruments. Different nanostructure (gratings, nanoholes and nanoparticles) and different materials (metal and MoS2) were patterned, which shows wide application of double-layer self-priming nanoimprint technology. Moreover, by a double-layer system, the width and the height of metal can be adjusted through the photoresist thickness and developing condition, which provide a programmable way to fabricate different nanostructures using a single mold. The double-layer self-priming nanoimprint method can be applied in poor condition without equipment and be programmable in nanostructure parameters using a single mold, which reduces the cost of instruments and molds.Keywords:double-layer;nanoimprint;wafer-scale;nanostructure
研究领域:
材料科学
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纳米技术
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DOI
PubMed
高影响因子
Materials
·
2018
·Vol. 11
·期 2
·239
·
IF 2.467
Dandan Men,Yingyi Wu,Chu Wang,Junhuai Xiang,Ganlan Yang,Changjun Wan,Honghua Zhang
Two-dimensional (2D) periodic micro/nanostructured arrays as SERS substrates have attracted intense attention due to their excellent uniformity and good stability. In this work, periodic hierarchical SiO2nanopillar arrays decorated with Ag nanoparticles (NPs) with clean surface were prepared on a wafer-scale using monolayer Au NP arrays as masks, followed by reactive ion etching (RIE), depositing Ag layer and annealing. For the prepared SiO2nanopillar arrays decorated with Ag NPs, the size of Ag NPs was tuned from ca. 24 to 126 nanometers by controlling the deposition thickness of Ag film. Importantly, the SiO2nanopillar arrays decorated with Ag NPs could be used as highly sensitive SERS substrate for the detection of 4-aminothiophenol (4-ATP) and rhodamine 6G (R6G) due to the high loading of Ag NPs and a very uniform morphology. With a deposition thickness of Ag layer of 30 nm, the SiO2nanopillar arrays decorated with Ag NPs exhibited the best sensitive SERS activity. The excellent SERS performance of this substrate is mainly attributed to high-density “hotspots” derived from nanogaps between Ag NPs. Furthermore, this strategy might be extended to synthesize other nanostructured arrays with a large area, which are difficult to be prepared only via conventional wet-chemical or physical methods.Keywords:wafer-scale;hierarchical arrays;RIE;Ag NPs;SERS substrate
研究领域:
材料科学
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纳米技术
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DOI
PubMed
高影响因子
Materials Today Communications
·
2024
·
IF 3.7
Hangqian Wang,Jialin Zhang,Jinhui Li,Xialei Lv,Shuye Zhang,Guoping Zhang,Rong Sun
Advancement of wafer-level packaging (WLP) has heightened the requirements for photosensitive polyimide (PSPI) materials, where the low dielectric property is a key element to realize high frequency communication. Herein, a poly(amidate) (PAE) was prepared using Pyromellitic Dianhydride, 4,4’-diaminodiphenyl ether, and hydroxyethyl methacrylate as the photosensitive group. Specifically, the fluorinated graphene quantum dots (FGQD) was introduced into the PAE resin by in situ polymerization, and the prepared composite films of photosensitive polyimide-fluorinated graphene quantum dots (PSPI-FGQD) showed excellent dielectric constants and other comprehensive properties. Compared with pure PSPI, the dielectric constant of PSPI-FGQD decreases from 3.8 to 3.0 at 1 MHz; the tensile strength increases from 84.5 to 110.1 MPa, the elongation at break raises from 5.24 % to 17.3 %, and the Young's modulus increases from 2.68 GPa to 2.88 GPa. The glass transition temperature ( T g ) is also increased to 420 °C with the introduction of FGQD. Apart of these, the fine patterning ability was observed for the FGQD/PSPI composite film, achieving a high photolithography resolution of 10 μm (L/S). To conclude, the preparation method of low dielectric FGQD/PSPI materials has promising potential applications in advanced packaging.
研究领域:
材料科学
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电子工程
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DOI
高影响因子
ACS Applied Electronic Materials
·
2025
·
IF 4.7
Rongxiang Ding,Ziyang Zhang,Hao Wu,Liwei Deng,Yuanjian Yuan,Yue Huang,Mengjian Zhu,Ziao Tian
Wafer-scale single-crystalline MoS2 epitaxially grown on sapphire by chemical vapor deposition (CVD) is expected to exhibit exceptional electrical and optoelectronic properties for the large-scale integration of two-dimensional (2D) semiconductor circuits. Prior studies proposed thermodynamic pathways for achieving unidirectional MoS2 domains. However, thermodynamic conditions are insufficient to achieve wafer-scale growth of unidirectional MoS2, while kinetic control during epitaxy remains unexplored. Here, we demonstrate the kinetics-driven adatoms diffusion and nuclei rotation by controlling the epitaxy temperature during the CVD process. We achieve the epitaxy of triangular MoS2 single-crystalline domains with a single orientation on sapphire. By carefully designing the Mo oxidation, dual-source delivery, and two-stage annealing, the nucleation density of MoS2 is reduced, and the domain size and uniformity are greatly enhanced. The fine control of the growth kinetics boosts the 2 in. wafer-scale continuous MoS2 single-crystalline film. The uniformity and single crystallinity were confirmed by Raman spectroscopy, photoluminescence, atomic force microscopy, low-energy electron diffraction, and second-harmonic generation. Furthermore, field-effect MoS2 transistors exhibited high room-temperature mobility up to 118 cm2·V–1·s–1, high on/off ratio over 1010, and steep subthreshold swing of ∼85 mV·dec–1. This work not only provides a feasible strategy for the manufacture of high-quality wafer-scale MoS2 films but also sheds light on the growth of other 2D semiconductor wafers.
研究领域:
材料科学
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凝聚态物理
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纳米科技
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半导体器件
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表面科学
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晶体生长
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电子显微学
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光电子学
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产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2018
·
IF 8.097
Zhengdong Liu,Mengya Song,Shang Ju,Xiao Huang,Xiangjing Wang,Xiaotong Shi,Ya Zhu,Zhan Wang,Jie Chen,Hai Li,Yingchun Cheng,Linghai Xie,Juqing Liu,Wei Huang
In this work, we report a universal surface-assisted oxidative polymerization strategy for wafer-scale fabrication of ultrathin two-dimensional conjugated microporous polymers (2D CMPs) on arbitrary substrates under ambient conditions. Three kinds of 2D CMPs with average thickness of 1.5–3.6 nm were prepared on SiO2/Si substrates by using carbazole based monomers. Moreover, 2D CMPs can be grown on reduced graphene oxide (rGO) substrate to construct large-area 2D CMP/rGO heterostructure. As a proof-of-concept demonstration, an organic vertical field-effect transistor based on 2D CMP/rGO heterostructures was fabricated, which exhibited typical p-type behavior with high reproducibility and on/off current ratio. Most importantly, the direct growth of large-area 2D CMPs on arbitrary substrates is compatible with the conventional processes in the semiconductor industry, and therefore is expected to expedite the development of 2D CMPs as building blocks for construction of practical electronic devices.
研究领域:
材料科学
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电子工程
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DOI
PubMed
高影响因子
NATURE MATERIALS
·
2025
·Vol. 24
·期 8
·1186-1194
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IF 38.5
Shi Zude,Qin Wen,Hu Zhili,Ma Mingyu,Liu Hong,Shu Zhiwen,Jiang Yubing,Xia Hang,Shi Wenyan,Zhang Chao Yue,Sang Xiaoru,Guo Cui,Li Yunxin,Liu Chengzhi,Gong Chengshi,Wang Hong,Liu Song,Tapasztó Levente,Gao Caitian,Liu Fucai,Tang Pengyi,Liu Yuan,Duan Huigao,Xie Erqing,Zhang Zhuhua,Liu Zheng,He Yongmin
Atom-thin amorphous materials (for example, amorphous monolayer carbon) offer a designable material platform for fundamental studies of the disorder system, as well as the development of various applications. However, their growth at a single layer remains challenging since their thermodynamically favourable grains are neither two dimensional nor layered. Here we demonstrate the growth of 1-nm-thick, amorphous metal chalcogenides at a wafer scale using a nanodroplet-driven nanoribbon-to-film strategy. Metal clusters are initially liquified into 1–2 nm droplets at 120 °C, and they then orchestrate the growth of amorphous single-layer nanoribbons, which eventually merge into a continuous centimetre-scale film. Phase-field simulations, combined with our characterizations, suggest a non-equilibrium kinetic growth mechanism, which can be applicable to various films, for example, PtSe x , IrSe x , PdSe x and RhSe x . The synthesized films exhibit a range of unique properties, including tunable conductivity through disorder modulation, high work functions and remarkable catalytic activity, making them promising candidates for hole-injection contacts in p-type transistors and hydrogen production applications. This work opens a pathway for the synthesis of non-layered materials approaching the single-layer limit.
研究领域:
材料科学
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纳米技术
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凝聚态物理
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催化
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半导体器件
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DOI
PubMed
高影响因子
Nature Nanotechnology
·
2021
·Vol. 16
·期 11
·1201-1207
·
IF 39.213
Li Taotao,Guo Wei,Ma Liang,Li Weisheng,Yu Zhihao,Han Zhen,Gao Si,Liu Lei,Fan Dongxu,Wang Zixuan,Yang Yang,Lin Weiyi,Luo Zhongzhong,Chen Xiaoqing,Dai Ningxuan,Tu Xuecou,Pan Danfeng,Yao Yagang,Wang Peng,Nie Yuefeng,Wang Jinlan,Shi Yi,Wang Xinran
Two-dimensional (2D) semiconductors, in particular transition metal dichalcogenides (TMDCs), have attracted great interest in extending Moore’s law beyond silicon 1 , 2 , 3 . However, despite extensive efforts 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , the growth of wafer-scale TMDC single crystals on scalable and industry-compatible substrates has not been well demonstrated. Here we demonstrate the epitaxial growth of 2 inch (~50 mm) monolayer molybdenum disulfide (MoS 2 ) single crystals on a C-plane sapphire. We designed the miscut orientation towards the A axis (C/A) of sapphire, which is perpendicular to the standard substrates. Although the change of miscut orientation does not affect the epitaxial relationship, the resulting step edges break the degeneracy of nucleation energy for the antiparallel MoS 2 domains and lead to more than a 99% unidirectional alignment. A set of microscopies, spectroscopies and electrical measurements consistently showed that the MoS 2 is single crystalline and has an excellent wafer-scale uniformity. We fabricated field-effect transistors and obtained a mobility of 102.6 cm 2 V −1 s −1 and a saturation current of 450 μA μm –1 , which are among the highest for monolayer MoS 2 . A statistical analysis of 160 field-effect transistors over a centimetre scale showed a >94% device yield and a 15% variation in mobility. We further demonstrated the single-crystalline MoSe 2 on C/A sapphire. Our method offers a general and scalable route to produce TMDC single crystals towards future electronics.
研究领域:
材料科学
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半导体物理
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纳米技术
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电子学
✓ 已验证
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2025
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IF 6.9
Binbin Ding,Lihan Wang,Denghui Yan,Fengyu Du,Chenyu Wang,Xiaoyan Tang,Yuming Zhang,Lianbi Li,Haoran Mu,Qingwen Song
Heterojunctions based on transition metal dichalcogenides (TMDs) and wide-bandgap semiconductors such as silicon carbide (SiC) offer significant opportunities for next-generation optoelectronic and power devices, leveraging the atomically thin, bandgap-tunable nature of TMDs and the thermal, electrical, and radiation robustness of SiC. However, achieving wafer-scale, orientation-controlled epitaxial growth of monolayer TMDs on SiC substrates remains challenging due to the large lattice mismatch and complex interface chemistry. Here, we demonstrate the epitaxial growth of 3 × 3 cm 2 monolayer (ML) –MoS 2 on 4H-SiC via chemical vapor deposition (CVD). Combined with structural characterizations and theoretical calculations, the Centimeter-scale ML-MoS 2 exhibits well-defined domain orientations of 0°, 30°, and 60° on the SiC surface. Owing to the low interfacial binding energy, the as-grown ML-MoS 2 can be readily transferred from the SiC substrate in a scalable, etch-free manner. While without any transfer process, the MoS 2 /SiC heterojunction exhibits a rectification ratio up to 10 7 and a pronounced photovoltaic effect under 340 nm and 532 nm laser illumination. These results offer insights into 2D/3D heteroepitaxy on wide-bandgap semiconductors and enable scalable integration of high-performance heterojunctions.
研究领域:
材料科学
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纳米技术
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半导体物理
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光电子学
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电子器件
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凝聚态物理
✓ 已验证
产品关联
DOI
高影响因子
POLYMER
·
2023
·
IF 4.6
Chunhui Qu,Liang Shan,Guoping Zhang,Rong Sun
Electronic crosstalk, signal propagation delay and loss on the redistribution layers (RDLs) have been increasingly serious along with the rapid development of wafer-level packing (WLP). Polyimide films with low dielectric permittivity (D k ) and low dielectric loss (D f ) at high frequency are in demand imminently as interlayer materials. In this work, a novel kind of intrinsic silane-containing polyimide was designed and prepared by the reactions of 1,3-Bis(3-aminopropyl)tetramethyldisiloxane (APDS) and 4,4′-Oxydianiline (ODA) with 2,2-Bis(3,4-anhydrodicarboxyphenyl) hexafluoropropane (6FDA). The chemical structure of polyimide was studied by FT-IR spectrum and NMR and their dielectric properties and other performances were systematically analyzed. Results showed that the lowest D k and D f of polyimide (6FDA/APDS) was 2.66 and 6 × 10 −4 at 10 GHz. Furthermore, the dielectric permittivity and loss of silane-containing polyimide decreased with increasing the content of silane . The excellent dielectric properties were attributed to decreasing polarization and increasing the free volume of molecular chains when the silane was introduced into the molecular structure of polyimide. This work provided guidance for the intrinsic silane-containing polyimide with low dielectric properties.
研究领域:
材料科学
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电气工程
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高分子化学
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产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）