ACS Applied Materials & Interfaces
·
2020
·
IF 8.758
Xiaoming Tang,Hai Zhou,Xiyan Pan,Ronghuan Liu,Dingjun Wu,Hao Wang
Organic–inorganic hybrid lead halide perovskites have attracted much attention in the photoelectric field due to their excellent characteristics, such as a tunable band gap, simple fabrication process, and high photoelectric conversion efficiency. However, the commercialization of the perovskite-based devices still faces many challenges, one of which is the inclusion of the toxic lead. Herein, we demonstrated a two-step solution method for synthesizing tin-based perovskite nanowires (NWs) with their application in photodetectors (PDs). By changing the halide exchange time and the Sn content in the precursor, the dark current of the CsPbxSn1–x(BryI1–y)3 perovskite NW PDs increased with increasing content of tin and decreased with increasing Br concentration, and the lowest dark current with a value of 0.672 nA at 1 V was achieved for the perovskite alloy NW PDs synthesized with 0.5 mg mL–1 SnI2. Our optimized perovskite alloy NW PDs showed high performance with a linear dynamic range of up to 120 dB, a rising/falling time of 4.25/4.82 ms, and a detectivity of 2 × 1010 Jones. In addition, our Sn-based perovskite NW devices could maintain good performance after storing in air for 30 days. These results demonstrated good practical application for the Sn-based perovskite NW devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2018
·Vol. 28
·期 43
·1804394
·
IF 13.325
Junpeng Zeng,Xiaoming Li,Ye Wu,Dandan Yang,Zhiguo Sun,Zehao Song,Hao Wang,Haibo Zeng
All-inorganic halide perovskite is considered as outstanding candidate of organic–inorganic hybrid perovskite due to its superior stability. However, the low solubility of precursor and uncontrollable film growth result in poor film quality and impede the application of polycrystalline films greatly. In this work it is reported on a space-confined growth strategy to overcome the low solubility and fast crystal growth disadvantages via freezing the precursor solution within the gaps of ordered polystyrene sphere templates. Then, the dense CsPbBr 3 polycrystalline films realize low trap density (3.07 × 10 12 cm −3 ) and high carrier mobility (9.27 cm 2 V −1 s −1 ) after stoichiometric modulation. Photodetectors based on these films exhibit high performance in all figures of merit. Specifically, high responsivity up to 216 A W −1 and ultrashort response time (<5 µs) are achieved, which are better than those of all the CsPbBr 3 based PDs. A record detectivity of 7.55 × 10 13 and 3.1 × 10 5 Hz −3 dB bandwidth are also achieved. This work opens the window of high quality all-inorganic halide perovskite polycrystalline films and can be extended to rational application of more optoelectronic devices including solar cells, photoelectrodes, and ray detectors.
研究领域:
材料科学
·
光电技术
·
纳米技术
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Wei Gong,Peng Wang,Wenjie Deng,Xiaobo Zhang,Boxing An,Jingjie Li,Zhaoqing Sun,Dichao Dai,Zekang Liu,Jingzhen Li,Yongzhe Zhang
Lead sulfide colloidal quantum dots (PbS CQDs) have shown great potential in photodetectors owing to their promising optical properties, especially their strong and tunable absorption. However, the limitation of the specific detectivity (D*) in CQD near-infrared (NIR) photodetectors remains unknown due to the ambiguous noise analysis. Therefore, a clear understanding of the noise current is critically demanded. Here, we elucidate that the noise current is the predominant factor limiting D*, and the noise is highly dependent on the trap densities in halide-passivated PbS films and the carriers injected from the Schottky contact (EDT-passivated PbS films/metal). It is found that the thickness of CQDs is proportional to their interface trap density, while it is inversely proportional to their minimal bulk trap density. A balance point can be reached at a certain thickness (136 nm) to minimize the trap density, giving rise to the improvement of D*. Utilizing thicker PbS-EDT films broadens the width of the tunneling barrier and thereby reduces the carrier injection, contributing to a further enhancement of D*. The limiting factors of D* determined in this work not only explain the physical mechanism of the influence on detection sensitivity but also give guidance to the design of high-performance CQD photodetectors.
研究领域:
材料科学
·
光学工程
✓ 已验证
DOI
PubMed
高影响因子
Surfaces and Interfaces
·
2025
·
IF 6.3
Chunlin Wen,Zhenhua Tang,Tingsu Liu,Fan Qiu,Yan-Ping Jiang,Xin-Gui Tang,Yi-Chun Zhou,Xiangjun Xing,Ju Gao
Recently, Ga 2 O 3 -based devices with a wide bandgap have gained great attention in power semiconductor devices. However, Ga 2 O 3 -based devices with the substable crystalline phase and high performances need be further developed and discussed. In this work, the α-Ga 2 O 3 thin films and GQDs/α-Ga 2 O 3 heterojunctions were prepared by magnetron sputtering on the transparent FTO substrates with a buffer TiO 2 layer. And, the good self-powered deep-ultraviolet photodetection performance and mechanisms were discussed in the GQDs/α-Ga 2 O 3 /α-TiO 2 /FTO devices: its responsivity to 254 nm UV light can reach 1.72 mA/W at a bias voltage of 0 V, a normalized detection rate of 1.7 × 10 10 Jones and the light-to-dark current ratio (PDCR) of ∼1 were achieved due to the change of heterojunction energy band type from II to I. Moreover, the good self-powered deep UV photodetection for GQDs/α-Ga 2 O 3 /α-TiO 2 /FTO devices were demonstrated: a PDCR of 1.1 × 10 3 , a self-powered responsivity (R) improved by a factor of 5 to 8.7 mA/W, the rise time (τ r )/fall time (τ f ) of 86/39 ms, and a normalized detectivity (D*) with an improved magnitude of 1.3 to 2.3 × 10 11 Jones were achieved by constructing GQDs/α-Ga 2 O 3 heterojunctions on the outer surface of α-Ga 2 O 3 thin film. These results can provide a reference for the future development of Ga 2 O 3 thin film devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Optical Materials
·
2020
·Vol. 8
·期 8
·1901735
·
IF 8.286
Ronghuan Liu,Jianqiang Zhang,Hai Zhou,Zehao Song,Zhaoning Song,Corey R. Grice,Dingjun Wu,Liangping Shen,Hao Wang
Cesium lead bromide (CsPbBr 3 ) perovskite photodetectors (PDs) are attractive for applications in visible light communication (VLC) due to ultra-high detectivity and fast response speed. However, the fabrication of high-quality CsPbBr 3 polycrystalline films using solution-based process is very challenging. Due to the low solubility of CsBr in precursor solutions, solution-processed CsPbBr 3 films are typically discontinuous and porous, hindering the performance of resulting PDs. Herein, a facile and modified sequential spin-coating method is introduced to prepare high-crystallinity, pinhole-free CsPb 2 Br 5 -CsPbBr 3 perovskite films with an average grain size of ≈1 µm. The hole-transport-layer-free (HTL-free) PDs based on the CsPb 2 Br 5 -CsPbBr 3 perovskite films show high performance parameters, including the responsivity of 0.11 A W −1 , the detectivity of 1.4 × 10 12 Jones, a linear dynamic range of 128.6, and an on/off ratio of 1.5 × 10 6 . The PDs outperform other HTL-free perovskite PDs and are comparable to the p–i–n perovskite PDs reported in the literature. In addition, the high-performance CsPb 2 Br 5 -CsPbBr 3 PDs are applied in VLC by using the PD as a self-powered signal receiver of voice commands in a simulated room. This work uniquely combines the features of high-performance self-powered perovskite PDs with VLC techniques, paving the path to wide applications of all-inorganic perovskite PDs.
研究领域:
材料科学
·
光电子学
·
通信技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
·
2023
·Vol. 41
·期 1
·55-61
·
IF 1.9
Feng Hua,Xin Du,Zhenyu Huang,Yiting Gu,Jianfeng Wen,Fuchi Liu,Junxue Chen,Tao Tang
Self-powered photodetectors (SPPDs) are attracting considerable publicity due to their superiority over conventional photodetectors (PDs) in terms of high sensitivity, fast response, and no need for an external power supply. Halide perovskites are much anticipated in SPPDs for their unusual photoelectronic properties. This work developed a Schottky junction ${{\rm CsPbBr}_3}/{\rm n} \text{-} {\rm Si}$ SPPD by growing stable all-inorganic ${{\rm CsPbBr}_3}$ microcrystals on an n-Si substrate using a solution method. At zero bias, such Schottky SPPD has a very weak dark current (0.3 pA), a wide linear dynamic range (LDR, 110 dB), a sizeable on–off ratio (${\gt}{{10}^3}$), and high detectivity (${1.05} \times {{10}^{11}}\;{\rm Jones}$). Through the research of this project, it is expected to obtain a way to prepare Schottky photodiodes with high stability and self-driving capability.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2024
·
IF 6.3
Chandrasekar Perumalveeramalai,Jie Zheng,Jagadeesh Babu Bellam,SVN Pammi,Xiaoming Zhang,Chuanbo Li
Multi-wall carbon nanotube (MWCNT) thin film has been identified as the ideal electrode material due to their inherent electronic and optoelectronic properties. We have successfully fabricated a vertical field-effect phototransistor (vFEpT) using MWCNT as a porous source electrode. The optimized MWCNT electrodes showed an electrical conductivity of 3.92 × 10 3 S/m and a sheet resistance of about 490 Ω/□, with a layer thickness of about 520 nm. The as-fabricated transistor has p-type conductivity because of the unintentional doping of the PbS layer and the intrinsic hole transport property of the MWCNT network. Additionally, the device shows excellent photoelectric performance at 30 mWcm −2 of illumination, with a high current density of 2.3 × 10 −3 Acm −2 . With a high conductivity network for carrier transfer and separation, the special characteristics of MWCNT nanoporous thin film enable improved photoelectric properties, such as a high photoresponsivity of 3.16 AW −1 and a specific detectivity of 2.33 × 10 12 Jones when illuminated at 808 nm light irradiance with an intensity of 0.6 µW/cm 2 . Furthermore, the device demonstrated a steady dynamic response to an optical signal, with rising and falling times of 31.8 ms and 32.9 ms, respectively. This work presents a new method for creating high-performance vertical phototransistors with MWCNT as the source electrode.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Optical Materials
·
2023
·Vol. 11
·期 20
·2300646
·
IF 9
Xinyi Zhang,Karim Khan,Ayesha Khan Tareen,Ye Zhang
Exploration of novel two–dimensional (2D) nanomaterials with desired properties using a controlled approach remains one of the major challenges ahead. Clusterphene, the newly emerged 2D formation of self-assembled clusters, exhibits a comparable structure to graphene with intriguing physicochemical features, which are applied in several scientific disciplines. Herein, it is demonstrated that polyoxometalate clusterphene (POMCene) is a promising 2D nanomaterial for photoelectrochemical (PEC) photodetection. The photodetection performance of POMCene can be subtly tuned by adjusting external conditions like bias voltage, electrolyte, and incident wavelength. A photocurrent of 1.88 µA cm ‒2 , a responsivity of 2.26 µA W ‒1 , a detectivity of 5.65 × 10 9 Jones, and a fast response speed of 0.02 s along with good long-term stability can be achieved. It is believed that this research can pave a new direction for the future development of 2D POMCene in high-performance optoelectronic devices.
研究领域:
材料科学
·
纳米技术
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Huihuang Huang,Yujie Yang,Hongyi Chen,Fanglu Qin,Bin Yu,Ruonan Wang,Qiang Cao,Ti Wang,Qianqian Lin
Antimony sulfide, as a binary chalcogenide, has attracted great attention in the field of optoelectronics in recent years, particularly in photovoltaics, because of its striking merits such as earth elements abundance, excellent stability, chemical versatility, and solution processability. With the rapid development of fabrication techniques and device engineering, the device performance of Sb2S3 solar cells has experienced an unprecedented success. However, photodetectors based on Sb2S3 were barely reported, especially based on the transistor configuration. In this work, we prepared high quality Sb2S3 thin films via a sol–gel method, and Sb2S3 thin films were deposited on zinc–tin oxide based field-effect transistors. Furthermore, an additional electron transport layer was inserted between the Sb2S3 layers and the zinc–tin oxide channels and archived high-performance phototransistors with proper interfacial engineering. The optimized devices exhibited extremely high photosensitivity (106), low dark current (∼10 pA) and noise (∼11 fA Hz–1/2), high detectivity (1 × 1013 Jones), and superior device stability, indicating great potential for next generation solution-processed photodetectors.
研究领域:
光电子学
·
材料科学
·
半导体器件
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Jingda Zhao,Xin Wang,Yubing Xu,Yuzhu Pan,Yuwei Li,Jing Chen,Qing Li,Xiaobing Zhang,Zhuoya Zhu,Zhiwei Zhao,Elias Emeka Elemike,Damian C. Onwudiwe,Byung Seong Bae,Suhaidi Bin Shafie,Wei Lei
Dual-mode photodetectors (PDs) have attracted increasing interest owing to their potential optoelectrical applications. However, the widespread use of PDs is still limited by the high cost of epitaxial semiconductors. In contrast, the solution processability and wide spectral tunability of perovskites have led to the development of various inexpensive and high-performance optoelectronic devices. In this study, we develop a high-performance electronically modulated dual-mode PD with near-infrared (NIR) narrowband and visible light broadband detection based on organic–inorganic hybrid methylammonium lead halide perovskite (MAPbX3; MA = CH3NH3 and X = Cl, Br, and I) single crystals with a pnp configuration. The operating mode of the dual-mode PD can be switched according to voltage bias polarity because the photon absorption region and carrier transport performance are tuned at different bias voltages. The dual-mode PD exhibits a NIR light responsivity of 0.244 A/W and a narrow full width at half-maximum of ∼12 nm at 820 nm at positive voltages and an average visible light responsivity of ∼0.13 A/W at negative voltages. The detectivities of both modes are high (∼1012 Jones), and the linear dynamic range is wide (>100 dB). Our study provides a new method for fabricating multifunctional PDs and can expand their application in integrated imaging systems.
研究领域:
光电技术
·
材料科学
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Hao Wang,Zhentao Du,Xue Jiang,Sheng Cao,Bingsuo Zou,Jinju Zheng,Jialong Zhao
Recently, photodetectors based on perovskite nanoplatelets (NPLs) have attracted considerable attention in the visible spectral region owing to their large absorption cross-section, high exciton binding energy, excellent charge transfer properties, and appropriate flexibility. However, their stability and performance are still challenging for perovskite NPL photodetectors. Here, a surface engineering strategy to enhance the optical stability of blue-light CsPbBr3 NPLs by acetylenedicarboxylic acid (ATDA) treatment has been developed. ATDA has strong binding capacity and a short chain length, which can effectively passivate defects and significantly improve the photoluminescence quantum efficiency, stability, and carrier mobility of NPLs. As a result, ATDA-treated CsPbBr3 NPLs exhibit improved optical properties in both solutions and films. The NPL solution maintains high PL performance even after being heated at 80 °C for 2 h, and the NPL film remains nondegradable after 4 h of exposure to ultraviolet irradiation. Especially, photodetectors based on the treated CsPbBr3 NPL films demonstrate exceptional performance, especially when the detectivity approaches up to 9.36 × 1012 Jones, which can be comparable to the best CsPbBr3 NPL photodetectors ever reported. More importantly, the assembled devices demonstrated high stability (stored in an air environment for more than 30 days), significantly exceeding that of untreated NPLs.
研究领域:
材料科学
·
光电子学
·
光子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Nano Materials
·
2023
·
IF 5.9
Zeren He,Yan Yang,Jiaxin Liu,Junyu Li,Xingyu Lu,Jikuang Zou,Shuai Yang,Yousheng Zou
Nowadays, halide perovskites have drawn extensive attention as active layers in the field of photodetectors (PDs) attributed to their optoelectric properties. However, the numerous defects in the prepared films and the lack of response in the near-infrared (NIR) range due to the intrinsic band gap limitation severely restrict the performances and applications of perovskite photodetectors. With this in mind, we introduced diethyl ether as a counter-solvent to improve the quality of the peroxide films. After comparison with chlorobenzene (CB), toluene (ToL), and ethyl acetate (EA), the mechanism by which diethyl ether (DE) as an antisolvent improves the quality of the films was explored. MAPbI3 films and lead sulfide (PbS) quantum dots (QDs) were then combined to achieve a visible (VIS)–near-infrared response. The resultant PD, with the structure of ITO/NiOx/PbS QDs/MAPbI3/PC61BM/Ag, exhibits an ultrabroad response from 300 to 1100 nm and presents high detectivity reaching 5.6 × 1011 and 6.5 × 1010 Jones in the VIS and NIR regions, respectively. The fast response time in the microsecond range and the response bandwidth of 10 kHz (f–3 dB) are comparable or even superior to counterparts. In addition, this approach provides ideas for the development of high-performance broadband perovskite-based optoelectronic devices.
研究领域:
材料科学
·
光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）