MATERIALS LETTERS
·
2023
·
IF 3
Jiaxin Fu,Jin Hu,Yamin Lv,Lidan Miao,Kaizhao Wang,Jiale Wu,Kaijun Wang,Weijun Zhang
Gallium oxide (Ga 2 O 3 ), a promising semiconductor material, has attracted significant attention in recent years. This study focuses on a method for rapidly obtaining high-purity Ga 2 O 3 through the one-step hydrolysis of gallium in an alkaline environment to address the challenges of complex experimental equipment and the high-pressure condition of the traditional method. Uniformly dispersed rod-like GaOOH with a length of 2 µm is prepared using a 5 mM polyvinylpyrrolidone solution. Additionally, Ga 2 O 3 (500 °C α-Ga 2 O 3 and 800 °C β-Ga 2 O 3 ) with different crystal forms is prepared by calcinating GaOOH at different temperatures. Compared with conventional methods, this approach offers a fast, safe, and cheap process for preparing high-purity Ga 2 O 3 .
研究领域:
材料科学
·
无机化学
·
半导体材料
·
纳米材料
·
功能材料
✓ 已验证
DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2018
·
IF 2.732
Qiang Shi,Qingru Wang,Dong Zhang,Qinglin Wang,Shuhong Li,Wenjun Wang,Quli Fan,Junying Zhang
In this study, Gallium oxide (Ga 2 O 3 ) thin films were deposited by vacuum thermal evaporation technique. The effects of annealing temperature on the structural, optical and photoluminescence (PL) properties of Ga 2 O 3 thin films were investigated in detail. The Ga 2 O 3 thin films annealed at lower temperatures were amorphous , while those annealed at above 800 °C were nanocrystalline . The annealing temperature increasing from 400 to 1100 °C results in the band-gap increase from 4.70 to 5.13 eV due to the reduction in density of defect states. Under the excitation at 250 nm, the PL spectra of thin films consisted of a UV emission (300 nm) and two blue emissions (400 nm and 438 nm). The UV and blue luminescence intensities increased as the annealing temperature was increased from 400 to 1100 °C. The blue luminescence is suggested to originate from the recombination of trapped electrons in the donor with trapped holes in the acceptor, where the origin of the donor should be an double ionized oxygen vacancy ( V O ++ ) and the acceptor should be a gallium vacancy ( V Ga ) or gallium-oxygen vacancy pair ( V Ga - V O ++ ).
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Environmental Sciences
·
2012
·
IF 1.66
Baoxiu Zhao,Mou Lv,Li Zhou
Perfluorooctanoic acid (PFOA) is a new-found hazardous persistent organic pollutant, and it is resistant to decomposition by hydroxyl radical (HO) due to its stable chemical structure and the high electronegativity of fluorine. Photocatalytic reduction of PFOA with β-Ga 2 O 3 in anoxic aqueous solution was investigated for the first time, and the results showed that the photoinduced electron (e − cb ) coming from the β-Ga 2 O 3 conduction band was the major degradation substance for PFOA, and shorter-chain perfluorinated carboxylic acids (PFCAs, C n F 2n+1 COOH, 1 ≤ n ≤ 6) were the dominant products. Furthermore, the concentration of F − was measured by the IC technique and defluorination efficiency was calculated. After 3 hr, the photocatalytic degradation efficiency was 98.8% and defluorination efficiency was 31.6% in the presence of thiosulfate and bubbling N 2 . The degradation reaction followed first-order kinetics ( k = 0.0239 min −1 , t 1/2 = 0.48 hr). PFCAs (C n F 2n+1 COOH, 1 ≤ n ≤ 7) were detected and measured by LC-MS and LC-MS/MS methods. It was deduced that the probable photocatalytic degradation mechanism involves e − cb attacking the carboxyl of C n F 2n + 1 COOH, resulting in decarboxylation and the generation of C n F 2n + 1 . The produced C n F 2n + 1 reacted with H 2 O, forming C n F 2n + 1 OH, then C n F 2n + 1 OH underwent HF loss and hydrolysis to form C n F 2n+1 COOH.
研究领域:
环境科学
·
材料科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2018
·
IF 5.091
Jin Liu,Wei Lu,Qian Zhong,Hongzhang Wu,Yunlin Li,Lili Li,Zhenling Wang
Semiconductor photocatalysis has become the focus of recent research on antibiotic treatment because it is a green and efficient technology. In this study, α-GaOOH with several novel microstructures has been synthesized at a low temperature and its subsequent thermal transformation. The influence of pH on the synthesis of α-GaOOH is studied, and the results indicate that pH played an important role in the microstructures of α-GaOOH and β-Ga 2 O 3 . All Ga 2 O 3 samples possess macro-mesoporous network structures and exhibits a remarkable photocatalytic activity for antibiotic degradation. The photoelectron chemical tests show that the separation efficiency of photogenerated charge carriers of Ga 2 O 3 -7.0 is higher than that of other Ga 2 O 3 . The enhanced photocatalytic activity of Ga 2 O 3 -7.0 is mainly ascribed to its morphology and oxygen vacancy . The active species trapping and photoluminescence measurement experiments indicate that OH and O 2 − are the major active species contributing to the photocatalytic process. This study will bring about the potential application in treatment of the antibiotic pollutants.
研究领域:
材料科学
·
环境科学
·
半导体光催化
✓ 已验证
产品关联
DOI
PubMed
高影响因子
INORGANIC CHEMISTRY
·
2024
·
IF 4.3
Yuhao Li,Junhao Xu,Tengbo Hu,Guangli Shi,Yao Peng,Feng Qiao,Lietao Zhang,Chuanyu Zhao,Ye Kuang,Longhai Shen
Rare earth (RE) dopants can modulate the bandgap of oxides of indium and gallium and provide extra upconversion luminescence (UCL) abilities. However, relevant UCL fine-tuning strategies and energy mechanisms have been less studied. In this research, InGaO, Ho3+ monodoped and Yb3+/Ho3+ codoped In2O3, and Ho3+ monodoped Yb3Ga5O12 nanoparticles (NPs) were synthesized by a solvothermal method. The effects of Yb3+ and Ho3+ dopants on the crystal structures, UCL properties, and optical bandgaps of the oxides were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UCL spectroscopy, and measurements of decay times, pump power dependence, and transmittance spectra. The crystal structures of oxide products of indium and gallium were significantly modified with RE dopants. In2O3 and Yb3Ga5O12 were selected as the host materials. For Yb3+/Ho3+ codoped In2O3 NPs, there existed energy transfers from the defect states of In2O3 to Ho3+ and from Yb3+ to Ho3+. With a fixed Ho3+ concentration, In2O3:0%Yb3+,2%Ho3+ NPs showed the optimal UCL properties mainly due to In2O3–Ho3+ energy transfer and Ho3+–Yb3+ energy-back-transfer, while with a fixed Yb3+ concentration, In2O3:5%Yb3+,3%Ho3+ NPs with a slight Yb2O3 impurity and Yb3Ga5O12:2%Ho3+ NPs did mainly due to Ho3+–Ho3+ cross-relaxation. Besides, the optical bandgaps of In2O3 and Yb3Ga5O12 were noticeably broadened with RE dopants. These findings can offer feasible directions for the synthesis and UCL fine-tuning of RE-doped oxides of indium and gallium and improve their multifunction application prospects in the fields of semiconductor and UCL nanomaterials.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Qi You,Jun Zhu,Luomeng Chao,Hai Zhang,Sihua Ha
Controlling the crystallization of gallium oxide (Ga 2 O 3 ) crystal as well as intrinsic defects (oxygen vacancies) are crucial steps in obtaining high-quality material and elucidating how defects affect semiconductor properties . Gallium oxide hydroxide (GaOOH) was firstly synthesized via the reaction of gallium nitrate (Ga(NO 3 ) 3 ) with different alkalis (Urea, NH 3 ·H 2 O, Na 2 CO 3 and NaOH) using the precipitation technique. Then, Ga 2 O 3 powder was obtained by adding carbon powder as reducing agent at the calcination stage. The β-Ga 2 O 3 powder prepared by NH 3 ·H 2 O were found to have the best crystallization as analyzed by X-ray diffractometer (XRD) and scanning electron microscopy (SEM). Meanwhile, the photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) results combined with the first-principles calculation indicate that the Ga 2 O 3 powder made by NH 3 ·H 2 O also has the least intrinsic oxygen vacancies .
✓ 已验证
产品关联
DOI
高影响因子
FUEL PROCESSING TECHNOLOGY
·
2018
·
IF 3.956
Tian-qi Lei,Yan-hu Cheng,Chang-xi Miao,Wei-ming Hua,Ying-hong Yue,Zi Gao
Dehydrogenation of ethane to ethylene in the presence or absence of CO 2 over silica-doped TiO 2 supported Ga 2 O 3 catalysts was investigated. The silica doping of TiO 2 support greatly improved the dehydrogenation activity in the absence of CO 2 , which can be ascribed to the increased acid sites. The initial activity in the presence of CO 2 decreased after the silica doping, due to the reduction in reverse water-gas shift ability. However, the selectivity as well as the stability increased, resulting in higher steady ethylene yield. A dynamic process consisting of alternative oxidative dehydrogenation/regeneration cycles by gasifying the carbon deposit with air for 10 min after each cycle of 6 h reaction was also performed and relatively stable ethane conversion ~30% and ethylene yield ~25% can be achieved. The different catalytic behaviors are probably associated with the different state of gallium species, caused by the different interaction between the Ga 2 O 3 and support.
研究领域:
化学工程
·
催化科学
✓ 已验证
产品关联
DOI
高影响因子
RSC Advances
·
2019
·Vol. 9
·期 35
·19930-19939
·
IF 3.049
Panqi Huang,Jingfei Luan
The effects of Ba-doping on the structure and photocatalytic performance of GaOOH were investigated for the first time in this paper. XRD, SEM, TEM, XPS, UPS, FT-IR, UV-Vis DRS, PL, BET and EPR characterizations were carried out to analyze the properties of Ba-doped GaOOH. The results showed that GaOOH crystallized well with the orthorhombic crystal system with space group Pbnm. The lattice parameters of GaOOH were found to be a = 4.509526 Å, b = 9.771034 Å and c = 2.969284 Å. The transition in the structural morphology of GaOOH before and after Ba-doping was observed in SEM pictures in which the morphology of GaOOH varied from wood-like to rice husk-like. At the same time, the specific surface area of 4 wt% Ba-doped GaOOH (21.5854 m2 g−1) was 3.42 times that of pure GaOOH (6.3047 m2 g−1). Ba-doping caused a red shift of the band gap according to UV-Vis DRS results. The enhanced defect states caused by Ba-doping was confirmed by PL results, which decreased the recombination rate of photogenerated electrons and photogenerated holes. Compared with pure GaOOH, when GaOOH with different Ba content was used as photocatalyst, the removal rate of enrofloxacin was increased by more than 20% only by illumination for 60 min. In addition, Ba-doped GaOOH had excellent stability and could be reused, which could reduce costs and increase the potential of its practical application.
研究领域:
材料科学
·
环境科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION
·
2024
·Vol. 39
·期 4
·814-818
·
IF 1.3
Wang Peng,Zhang Binbin,Liu Xiaofei,Zhang Xin,Tu Rong,Zhang Song,Li Baowen
It remains a big challenge to synthesize two-dimensional (2D) GaN material for applications in power nanodevices. Traditional synthetic methods require complex equipment and processes and time consuming. Here, we reported a two-step route to prepare polycrystalline 2D GaN film. The amorphous ultrathin Ga 2 O 3 film was first exfoliated from the surface of liquid gallium. In a vapor phase reaction, 2D Ga 2 O 3 film was then converted into 2D GaN film while maintaining the 2D morphology. Raman and high-resolution transmission electron microscope (HRTEM) analysis implies the successful synthesis of wurtzite-type GaN ultrathin film. This simple strategy proposed in this work will provide more opportunities for applications of GaN ultrathin film in many devices.
研究领域:
材料科学
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
Science China-Chemistry
·
2014
·Vol. 58
·期 3
·532-538
·
IF 1.516
Chai XiaoHui,Liu ZhiHong,Huang YingPing
Three different nanorod-like gallium oxides with mono/poly-crystalline nature (α, β, and α/β-Ga 2 O 3 ) were prepared by regulating the amount of polyethylene glycol (PEG) 6000 in the range of 0.2–0.8 g proportionally via a hydrothermal method combined with further calcination. The bandgap of the products, given by UV-Vis diffuse reflectance spectra (UV-Vis DRS), was in the order of α-Ga 2 O 3 > α/β-Ga 2 O 3 > β-Ga 2 O 3 . To further investigate the photocatalysis performance of the catalysts, the decomposition of rhodamine B (RhB) by Ga 2 O 3 under UV light illumination ( λ < 387 nm) was presented and complete degradation could be achieved within 30 min, a result that showed the highest efficiency. The photocatalytic oxidation mechanism is further discussed and prominently related to the active species: hydroxyl radical (·OH) and superoxide radical (O 2
· − ), which were confirmed by electron paramagnetic resonance (EPR).
研究领域:
材料科学
·
环境科学
✓ 已验证
产品关联
DOI
高影响因子
Nanomaterials
·
2025
·Vol. 15
·期 5
·402
·
IF 4.3
Lingfeng Mao,Xiaoxuan Wang,Chaoyang Huang,Yi Ma,Feifei Qin,Wendong Lu,Gangyi Zhu,Zengliang Shi,Qiannan Cui,Chunxiang Xu
Gallium oxide (Ga2O3), an ultrawide bandgap semiconductor, is an ideal material for solar-blind photodetectors, but challenges such as low responsivity and response speed persist. In this paper, one-dimensional (1D) Ga2O3nanorods were designed to achieve high photodetection performance due to their effective light absorption and light field confinement. Through modulating source concentration, pH value, temperature, and reaction time, 1D β-Ga2O3nanorods were controllably fabricated using a cost-effective hydrothermal method, followed by post-annealing. The nanorods had a diameter of ~500 nm, length from 0.5 to 3 μm, and structure from nanorods to spindles, indicating that different β-Ga2O3nanorods can be utilized controllably through tuning reaction parameters. The 1D β-Ga2O3nanorods with a high length-to-diameter ratio were chosen to construct metal-semiconductor-metal type photodetectors. These devices exhibited a high responsivity of 8.0 × 10−4A/W and detectivity of 4.58 × 109Jones under 254 nm light irradiation. The findings highlighted the potential of 1D Ga2O3nanostructures for high-performance solar-blind ultraviolet photodetectors, paving the way for future integrable deep ultraviolet optoelectronic devices.
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CATALYSIS LETTERS
·
2020
·Vol. 151
·期 7
·1894-1901
·
IF 2.482
Jiang Peng,Fu Haoyue,Ma Hongfang,Qian Weixin,Zhang Haitao,Ying Weiyong
Highly active Ga 2 O 3 nanoparticles catalysts were prepared by one-step oxidative decomposition of gallium nitrate with sucrose-derived carbon foams (SCF) template. The catalysts were investigated by XRD, Ar physisorption, SEM–EDS, HRTEM, TGA, NH 3 -TPD and 71 Ga MAS NMR. The addition of sucrose facilitated the higher surface area of Ga 2 O 3 nanoparticles and morphological transformation from bulk to flake due to the structure-directing role of the sucrose solution. Moreover, the weak-medium surface acid sites increased by adding sucrose properly, which was related to the larger number of tetrahedral Ga 3+ cations. The optimum catalytic activity was achieved over S X CF-Ga 2 O 3 catalysts at the sucrose/Ga 2 O 3 molar ratio of 6 with the propane conversion of 46.63% and propene selectivity of 88.18%. Graphic abstract
研究领域:
化学工程
·
催化材料科学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）