OPTICAL MATERIALS
·
2022
·
IF 3.754
Wentong Gao,Wenlu Wu,Shihai Cao,Bing Han,Nengquan Li
Solution-processable host materials play an important role in achieving highly efficient and cost-effective phosphorescent organic light-emitting diodes (PhOLEDs). This paper designed and prepared a simple solution-processable host material of TPA-PyF 2 based on triphenylamine and pyridine to fabricate efficient solution-processed PhOLEDs. TPA-PyF 2 featured an σ-linkage between the electron donor and acceptor units, which not only served to limit the conjugation length of the molecule and maintain a high triplet energy level, but also endowed the host molecule with a three-dimensional structure to enable high film morphological stability for solution processing. As a result, TPA-PyF 2 exhibited a high triplet energy level (2.82 eV), high thermal stability, bipolar charge transfer, and excellent film morphology. Blue solution-processed OLED with a simple double-layer structure based on TPA-PyF 2 host achieved a maximum current efficiency, power efficiency, and luminance of 17.2 cd/A, 7.1 lm/W, and 11519 cd/m 2 , respectively, with a small efficiency roll-off of only 9.1% at the practical luminance of 1000 cd/m 2 . This work reveals that the σ-linkage strategy is promising in designing efficient solution-processable host materials for high-efficiency PhOLEDs.
研究领域:
材料科学
·
有机电子学
✓ 已验证
产品关联
DOI
高影响因子
Device
·
2024
·
IF 0
Yujie Yang,Zhenghui Fan,Bohua He,Zhenglin Jia,Haoyu Zhao,Pan Xiong,Yong Liu,Wei Dang,Jianbo Wang,He Zheng,Xiaojia Zheng,Qianqian Lin
Solution-processed semiconductors have emerged as promising candidates for next-generation X-ray detectors, benefiting from their facile processing and tunable optoelectronic properties. However, the fabrication of thick junctions (>1 μm) is limited by poor stability and insufficient charge transport. To fill this gap, we report a sol-gel method to fabricate thick junctions based on Sb 2-x Bi x S 3 precursors. The charge carrier dynamics of antimony bismuth sulfide films were evaluated by multiple transient and steady-state techniques. It was found that Bi can modulate film morphology and thick film formation, and it also has an impact on boosting the charge transport properties. After optimization, low dark current, ultra-fast response, decent X-ray sensitivity, and high spatial resolution were achieved. The Sb 2-x Bi x S 3 -based thick junctions are stable under large bias voltage, high irradiance, and high temperature even underwater, indicating the potential for X-ray detection and imaging.
研究领域:
材料科学
·
凝聚态物理
·
核医学成像
✓ 已验证
DOI
Applied Sciences-Basel
·
2021
·Vol. 11
·期 10
·4393
·
IF 2.679
Yongbo Wu,Linfeng Lan,Penghui He,Yilong Lin,Caihao Deng,Siting Chen,Junbiao Peng
Over the past decade, there have been many reports on solution-processed oxide thin-film transistors (TFTs) with high mobility (even >100 cm2V−1s−1). However, the capacitance uncertainty of the solution-processed oxide gate dielectrics leads to serious overestimation of the mobility. Here, solution-processed AlOxdielectrics are investigated systematically, and the effect of mobile ions on the frequency-dependent capacitance of the solution-processed AlOxdielectrics is also studied. It was found that the capacitance of the AlOxdepends on the frequency seriously when the annealing temperature is lower than 300 °C, and the water treatment causes more seriously frequency-dependent capacitance. The strong frequency-dependent capacitance of the AlOxannealed at 250 or 300 °C is attributed to relaxation polarization of the weakly bound ions in the incompletely decomposed AlOxfilms. The water treatment introduces a large number of protons (H+) that would migrate to the ITO/AlOxinterface under a certain electric field and form an electric double layer (EDL) that has ultrahigh capacitance at low frequency.Keywords:Aluminum oxide;dielectric;thin-film transistor;solution-processed;oxide semiconductor
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
Small
·
2020
·Vol. 16
·期 40
·2003816
·
IF 11.459
Guolong Wang,Xiaoqian Cui,Jiamei Liu,Yaling Wang,Yide Qiao,Xiaowei Shi,Yan Zhang,Heguang Liu,Lei Li
Exploring new battery technologies will promote the advance of energy storage systems. Designing a symmetrical-structured rechargeable battery with the same electrode materials is a meaningful exploration for battery technology. Here, a solution-processed all-V 2 O 5 rechargeable battery with V 2 O 5 as both anode and cathode is presented, in which the anionic/cationic redox reactions are decoupled by precisely clamping its working potential windows. The battery shows good electrochemical performance with high capacity of 151 mAh g −1 at 0.10 C, good rate performance with 70% capacity retention when the current increases from 0.10 to 5 C, and promising cycling stability over 83% capacity retention after 900 cycles at 1 C. Moreover, the battery is highly profitable for simplified fabrication and scalable production, which benefits from its symmetrical configuration as well as the solution-processed strategy. This work offers a new paradigm to construct advanced symmetrical energy storage devices.
研究领域:
材料科学
·
能源技术
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2019
·
IF 8.355
Jingxiang Wang,Hongli Liu,Sen Wu,Yi Jia,Hang Yu,Xianggao Li,Shirong Wang
Recently, developing insoluble cross-linkable functional layers plays a vital role for solution-processed organic light emitting diodes (OLEDs). Here, two vinyl-based cross-linkable hole transporting materials V-TPAVTPD and V-TPAVCBP are designed and synthesized. Additionally, cationic photoinitiator 4-octyloxydiphenyliodonium hexafluoroantimonate (OPPI) is first introduced to chemically induce vinyl-based photo cross-linking process, aiming at lowering cross-linking temperature and enhancing hole mobility. As a result, cross-linking can occur at expressly low temperature of 120 °C with >95% solvent resistance. Moreover, hole mobility is markedly enhanced with the value higher than 10 −3 cm 2 V −1 s −1 . When applying hole transporting layers (HTLs) to solution-processed green and red phosphorescent OLEDs, devices exhibit excellent properties. Particularly, the maximum current efficiency of 54.0 cd A −1 (green), 9.8 cd A −1 (red) and external quantum efficiency of 15.5% (green), 15.0% (red) are obtained when OPPI doped V-TPAVCBP serves as HTL. This low temperature feasible cross-linking process to prepare HTLs with preferable hole mobility promotes the development of OLEDs.
研究领域:
材料科学
·
光电技术
✓ 已验证
DOI
高影响因子
NATURE
·
2014
·Vol. 515
·期 7525
·96-99
·
IF 42.351
Dai Xingliang,Zhang Zhenxing,Jin Yizheng,Niu Yuan,Cao Hujia,Liang Xiaoyong,Chen Liwei,Wang Jianpu,Peng Xiaogang
Solution-processed optoelectronic and electronic devices are attractive owing to the potential for low-cost fabrication of large-area devices and the compatibility with lightweight, flexible plastic substrates. Solution-processed light-emitting diodes (LEDs) using conjugated polymers or quantum dots as emitters have attracted great interest over the past two decades1,2. However, the overall performance of solution-processed LEDs2,3,4,5—including their efficiency, efficiency roll-off at high current densities, turn-on voltage and lifetime under operational conditions—remains inferior to that of the best vacuum-deposited organic LEDs6,7,8. Here we report a solution-processed, multilayer quantum-dot-based LED with excellent performance and reproducibility. It exhibits colour-saturated deep-red emission, sub-bandgap turn-on at 1.7 volts, high external quantum efficiencies of up to 20.5 per cent, low efficiency roll-off (up to 15.1 per cent of the external quantum efficiency at 100 mA cm−2), and a long operational lifetime of more than 100,000 hours at 100 cd m−2, making this device the best-performing solution-processed red LED so far, comparable to state-of-the-art vacuum-deposited organic LEDs2,3,4,5,6,7,8. This optoelectronic performance is achieved by inserting an insulating layer between the quantum dot layer and the oxide electron-transport layer to optimize charge balance in the device and preserve the superior emissive properties of the quantum dots. We anticipate that our results will be a starting point for further research, leading to high-performance, all-solution-processed quantum-dot-based LEDs ideal for next-generation display and solid-state lighting technologies.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry A
·
2021
·Vol. 9
·期 32
·17390-17399
·
IF 12.732
Tianshi Zhao,Chenguang Liu,Chun Zhao,Wangying Xu,Yina Liu,Ivona Z. Mitrovic,Eng Gee Lim,Li Yang,Ce Zhou Zhao
MXenes are a large class of two-dimensional (2D) materials widely studied recently since they have good water solubility and are able to tune the work function (WF) of materials without changing their electronic characteristics. Based on this, aqueous solution-processed indium-free zinc tin oxide (ZTO) thin-film transistors (TFTs) have been fabricated under an annealing temperature of 300 °C and successfully optimized. This optimization is achieved by fabricating a channel layer into a homojunction structure (MXene doped ZTO/ZTO) to form a two-dimensional electron gas (2DEG). Through doping the specific concentrations of Ti3C2Tx MXenes into the upper layer ZTO thin films, the TFTs exhibit enhanced field-effect mobilities (μFE) of 10.77 cm2 V−1 s−1 and 13.06 cm2 V−1 s−1 as well as a large on/off current ratio of more than 108. Moreover, compared with the undoped double-layer ZTO TFTs, the homojunction devices show better stability, mainly resulting from the transformation in leading conduction mode. Finally, through applying the homojunction channel on the solution-processed aluminum oxide (AlOx) dielectric layer, the μFE exhibits a further enhanced value of 28.35 cm2 V−1 s−1. This is the first report to apply MXenes to the channel layer of TFTs and to fabricate solution-processed ZTO thin films via an aqueous solvent under 300 °C.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
Journal of Energy Chemistry
·
2019
·
IF 5.162
Biwen Duan,Linbao Guo,Qing Yu,Jiangjian Shi,Huijue Wu,Yanhong Luo,Dongmei Li,Sixin Wu,Zhi Zheng,Qingbo Meng
In CZTSSe solar cells, a simple sodium-incorporation post-treatment method toward solution-processed Cu 2 ZnSnS 4 precursor films is presented in this work. An ultrathin NaCl film is deposited on Cu 2 ZnSnS 4 precursor films by spin-coating NaCl solution. In subsequent selenization process, the introduction of NaCl is found to be benefacial for the formation of Cu 2- x Se, which can further facilitate the element transportation, leading to dense and smooth CZTSSe films with large grains and less impurity Cu 2 Sn(S,Se) 3 phase. SIMS depth profiles confirm the gradient distribution of the sodium element in Na-doped absorbers. Photoluminescence spectra show that the introduction of appropriate sodium into the absorber can inhibit the band tail states. As high as 11.18% of power conversion efficiency (PCE) is achieved for the device treated with 5 mg mL −1 NaCl solution, and an average efficiency of Na-doped devices is 10.71%, 13% higher than that of the control groups (9.45%). Besides, the depletion width and the charge recombination lifetime can also have regular variation with sodium treatment. This work offers an easy modification method for high-quality Na-doped CZTSSe films and high-performance devices, in the meantime, it can also help to further understand the effects of sodium in CZTSSe solar cells.
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2021
·
IF 13.273
Wusong Zha,Huimin Gu,Wei Pan,Xue Sun,Yunfei Han,Zhiyun Li,Xuefei Weng,Qun Luo,Shangfeng Yang,Chang-Qi Ma
Solution-processable hole transporting layer (HTL) is one basis for the full-solution-processable fabrication of the organic solar cells (OSCs). Molybdenum oxide (MoO x ) is a widely used HTL and has the possibility of solution processing. Controlling the valence state of molybdenum (Mo) in MoO x HTL is critical for OSCs performance. In this work, we developed a novel methode based on photochemical reduction to synthesize HMoO x nanoparticle ink for OSCs. HMoO 3 nanoparticle was firstly obtained through oxidaiton of metal molybdenum. Afterward, the HMoO 3 precursor nanoparticles were continuously illuminated to induce the reduction of Mo(VI) to Mo(V) to form HMoO x . Such a process could proceed under the illumination of different light sources, even sunlight. In addition, photoelectron spectroscopy (XPS) and absorption spectra demonstrated such a photoreduction process was well controllable by illumination intensity and illumination time. With this HMoO x HTL for the inverted OSCs, a high efficiency of 13.17% and 16.64% for the PM7:IT-4F and PM6:Y6 OSCs was obtained, which is comparable with the evaporated MoO 3 HTL-based OSCs. Furthermore, based on the Ag nanowires (AgNWs) electrode, the performances of all-solution-processed PM6:Y6 semitransparent device also reach 10.52%. This work provides a simple and feasible route to fabricate hole transporting layer for solution-processable OSCs.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
Energy Material Advances
·
2024
·
IF 14.8
Xin Wu,Peiyao Liu,Bingchen Huo,Yiyang Li,Shuang Liu,Yifan Lv,Cun-Yue Guo
Organic thermoelectric materials are not only used in low-grade waste heat recovery but also have frontier applications in sensors, wearable self-powered devices, biomaterials, and smart materials with the development of flexible electronics. However, investigation on the thermoelectric performance of single-walled carbon nanotubes (SWCNTs) comparable to that of conducting polymers and their composites with SWCNTs has been rarely attempted, and there were few reports on SWCNTs alone as organic thermoelectric materials. Certainly, SWCNTs possess high Young’s modulus, high thermal stability, flexibility, lightweight, easily controllable doping level, and facile p–n transition, while the mechanism of molecular doping of SWCNTs remains to be well understood. Here, facile solution processing achieved the enhancement of p-type and n-type thermoelectric performance of SWCNTs. Small-molecular-weight polyethylene glycol treatment improved electrical conductivity and the Seebeck coefficient of SWCNTs (p-SWCNTs) simultaneously, with the power factor of 303.17 ± 46.25 μW·m−1·K−2. Small amount of polyethylenimine doping made the Seebeck coefficient of SWCNTs (n-SWCNTs) turn negative and rendered great air stability of n-SWCNTs. The electrical conductivity and power factor of n-SWCNTs reached 1,702.56 ± 164.13 S·cm−1 and 418.49 ± 46.30 μW·m−1·K−2 at 298 K, respectively. The power factor of n-SWCNTs got even higher at 319.5 K in vacuo, reaching a high value of 643.35 μW·m−1·K−2. Finally, mechanism study in this work provided inspiration and guidance for the application of these types of dopants in the performance improvement of SWCNTs.
研究领域:
材料科学
·
有机电子学
·
纳米技术
✓ 已验证
DOI
高影响因子
Nature Electronics
·
2025
·
IF 40.9
He Jing,Ge Jifeng,Xue Junying,Xia Tingyi,Dai Yongping,Wang Shengqi,Li Wenjie,Lin Zhaoyang
Solution-processed two-dimensional semiconductors could be used to create electronic devices on large scales and at low cost. However, the electronic performance of devices based on such materials is typically below that of devices based on materials grown via high-temperature chemical vapour deposition. Here we report the fabrication of indium selenide (InSe) semiconductor thin films using a colloidal solution of monolayer nanosheets (monolayer purity more than 98%). The InSe thin films are assembled on 4-inch wafers with conformal and intimate van der Waals contacts between the monolayer building blocks. We use the solution-processed films to fabricate InSe transistors that exhibit electron mobilities of 90–120 cm 2 V −1 s −1 , current on/off ratios of up to 10 7 and a small current hysteresis. We also show that InSe transistors with oxide encapsulation can remain stable in air for 3 months.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Electronic Materials
·
2025
·
IF 4.7
Jingwei Zhang,Hui Kang,Zetong Li,Siqing Yuan,Yihuan Wang,Dewen Zhao,Zhimin Chai,Xinchun Lu
Solution-based processes have emerged as a compelling alternative to the traditional vacuum-based physical vapor deposition to fabricate indium tin oxide (ITO) films owing to their advantages of cost-effectiveness, being vacuum-free, and simple equipment. Despite extensive research to improve the electrical properties of ITO films as transparent conductive oxides (TCOs), the influence of precursor solution composition on these properties remains unexplored. Here, we prepare precursor solutions that vary in anionic groups and metal cation valence states and investigate how the composition of these solutions influences the electrical properties of the solution-processed ITO films. The results reveal that incorporating nitrate anion-based precursors and Sn (II)-based precursors in the solutions leads to the ITO film with a low resistivity of 3.5 × 10–3 Ω cm. This performance is attributed to the abundant formation of M-O-M bonds and the appropriate concentration of oxygen vacancies in the polycrystalline ITO films. Thin film transistors utilizing ITO patterns with reduced resistivities demonstrate enhanced field-effect mobilities, which can be attributed to the decreased contact resistances between the ITO source/drain electrodes and indium oxide channels. The practical application of patterned ITO films in flexible electroluminescent devices is demonstrated, highlighting the immense potential of using our ITO films in optoelectronic and flexible technology.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）