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Nuclear Science and Techniques · 2022 ·Vol. 33 ·期 8 ·1-11 · IF 2.389

New flexible CsPbBr3-based scintillator for X-ray tomography

Lü Zhi-Wei,Wei Gong-Xiang,Wang Han-Qiu,Guan Yu,Jiang Ning,Liu Yun-Yan,Li Zhao,Qin Hua,Liu Hui-Qiang

The evolution of lead halide perovskites used for X-ray imaging scintillators has been facilitated by the development of solution-processable semiconductors characterized by large-area, flexible, fast photoresponse. The stability and durability of these new perovskites are insufficient to achieve extended computed tomography scanning times with hard X-rays. In this study, we fabricated a self-assembled CsPbBr 3 -based scintillator film with a flexible large-area uniform thickness using a new room-temperature solution-processable method. The sensitivity and responsivity of X-ray photon conversion were quantitatively measured and showed a good linear response relationship suitable for X-ray imaging. We also demonstrated, for the first time, that the self-assembled CsPbBr 3 -based scintillator has good stability for hard X-ray microtomography. Therefore, such an inexpensive solution-processed semiconductor easily prepared at room temperature can be used as a hard X-ray scintillator and equipped with flexible CsPbBr 3 -based X-ray detectors. It has great potential in three-dimensional high-resolution phase-contrast X-ray-imaging applications in biomedicine and material science because of its heavy Pb and Br atoms.

研究领域: 材料科学 · 医学影像 · 半导体技术
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Advanced Materials Interfaces · 2024 · IF 4.3

Morphological and Interfacial Engineering with a Surfactant Additive Toward High-Performance Blade-Coated Quantum Dot Light-Emitting Diodes

Wei-Zhi Liu,Hong-Wei Duan,Shu-Guang Meng,Dong-Ying Zhou,Liang-Sheng Liao

The development of scalable and cost-effective solution processes for large-area quantum light-emitting diodes (QLEDs) remains a pressing challenge. In this work, the blade-coating process is explored for fabricating bottom-emitting QLEDs using a poly(3,4- ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) layer modified with methanol (MeOH) and polyethylene glycol (PEG). By incorporating MeOH into the PEDOT:PSS solution, a significant reduction in surface tension is achieved, resulting in thinner and more uniform films. The addition of PEG further enhanced the film quality by suppressing PEDOT aggregation and improving phase separation, which is confirmed via atomic force microscopy (AFM). These modifications not only enhanced the conductivity of the PEDOT:PSS film due to the conformation changes, but also improved energy level alignment, leading to improved hole-injecting properties and reduced driving voltages in QLED devices. Small-area QLEDs with the optimized PEDOT:PSS/MeOH/PEG layer demonstrated peak current efficiencies (CE) and external quantum efficiencies (EQE) comparable to those of spin-coated devices. The best performance is observed at a PEG concentration of 0.1 mg mL −1 , yielding a CE of 33.1 cd A −1 and an EQE of 26.0%. Additionally, large-area QLEDs (25 × 25 mm) fabricated with this approach showed uniform emission and high efficiencies, underscoring the potential of the blade-coating method for scalable production of high-performance QLEDs.

研究领域: 材料科学 · 显示技术
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JOURNAL OF ALLOYS AND COMPOUNDS · 2021 · IF 5.316

Enhancement of the photovoltaic performance of Cd-alloyed Cu2ZnSn(S,Se)4 films based on a low-cost water-based solution process

Xiaogong Lv,Chengjun Zhu,Yiming Wang,Lei Wang,Jianming Shi

Kesterite Cu 2 Zn 1- x Cd x Sn(S,Se) 4 (CZCTSSe) alloy thin films were fabricated by the water-based solution approach. The influence of Cd doping on the morphology, phase structure, element valence states, optical, electrical, and device performance were comprehensively examined. Cd was clearly alloyed into the Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber layer to form the CZCTSSe compound. By controlling the relative Cd content, band gap values ( E g ) of the CZCTSSe thin films were engineered between 1.10 eV and 1.21 eV. In addition, doping with Cd led to the enhancement of grain growth as well as improvement of the conductivity and photoelectric property of the absorber layer. In particular, the CZCTSSe ( x  = 0.4) absorber layer exhibited a pure phase, larger grain size, compact and uniform topography, suitable band gap, Cu-poor and (Cd+Zn)-rich composition, higher conductivity and better photoelectric response. Power conversion efficiency (PCE) is improved from 4.37% of the CZCTSSe ( x  = 0.0) device to 5.16% of CZCTSSe ( x  = 0.4) device, and the increases of short-circuit current ( J sc ) achieved to 8.94 mA/cm 2 . The encouraging results suggest that doping of Cd is an effective way to improve CZTSSe film properties and promote device efficiency.

研究领域: 材料科学 · 光伏技术
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NEW JOURNAL OF CHEMISTRY · 2015 ·Vol. 40 ·期 2 ·1878-1881 · IF 3.086

Solution process for fabricating CuIn0.9R0.1(S,Se)2 (R = Al, Ni, Co)/CdS p–n junctions and their applications in solar cells

Yong Cui,Zhe Zhang,Xu Du,Wei Liu,Yulin Deng,Shi Liu,Gang Wang

CuIn0.9R0.1(S,Se)2 (R = Al, Ni, Co) thin films were obtained via a solution process based on homogeneous precursor solutions and selenization. The as-prepared thin films were characterized by XRD, EDS and SEM. The CdS buffer layer was deposited by a solution process on the CuIn0.9R0.1(S,Se)2 (R = Al, Ni, Co) thin films, and Mo/CuIn0.9R0.1(S,Se)2 (R = Al, Ni, Co)/CdS/i-ZnO/ITO/Al thin-film solar cells were fabricated. The efficiencies of the as-fabricated CuIn0.9R0.1(S,Se)2 (R = Al, Ni, Co) thin-film solar cells were 4.33%, 2.38% and 1.98%, respectively.

CAS / MDL: 64-17-5 109-73-9 75-15-0
研究领域: 材料科学 · 太阳能 · 半导体物理
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ACS Applied Materials & Interfaces · 2018 · IF 8.097

Fabrication of a High-Quality Cu2ZnSn(S,Se)4 Absorber Layer via an Aqueous Solution Process and Application in Solar Cells

Wangen Zhao,Fengyang Yu,Shengzhong Frank Liu

The development of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells determines the prospect of thin-film photovoltaic devices because of some of their strengths. However, the usual solution fabrication processes of CZTSSe absorbing layers are either too tedious or highly toxic. Here, we have developed an alternative strategy to prepare kesterite CZTSSe absorber films with a simple and low-toxicity solution process by replacing the commonly employed thiol-based compounds using the glycolic acid aqueous solution, which significantly reduces the environment pollution and toxicity, providing a possibility toward the green solvent process. The power conversion efficiency of 6.81% has been acquired based the aqueous solution-processed CZTSSe thin film via optimizing the fabrication technology.

研究领域: 材料科学 · 能源技术
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ACS Applied Energy Materials · 2018 · IF 0

Tuning the Se Content in Cu2ZnSn(S, Se)4 Absorber to Achieve 9.7% Solar Cell Efficiency from a Thiol/Amine-Based Solution Process

Junjie Fu,Jie Fu,Qingwen Tian,Houlin Wang,Fengming Zhao,Jun Kong,Xiangyun Zhao,Sixin Wu

The Se content in a Cu2ZnSn(S, Se)4 absorber layer has a significant impact on the electronic properties, but it is rather challenging to control the Se/(S + Se) ratio due to a complicated selenization process. Here, a low-toxicity thiol/amine-based solution process was developed to tune the Se content in a Cu2ZnSn(S, Se)4 absorber layer to an optimal value by ingeniously controlling the SeO2 in the precursor solution. We demonstrated that the crystal growth and the band gap of Cu2ZnSn(S, Se)4 thin films are affected by the Se/(S + Se) ratio. By this approach, the open-circuit voltage deficit (Voc,def) of the device was effectively decreased, and the short-circuit density (Jsc) and fill factor (FF) were remarkably improved; thus, the power conversion efficiency of the Cu2ZnSn(S, Se)4 solar cells was successfully increased from 5.6% to 9.7% for the optimal band gap (Eg = 1.13 eV).

研究领域: 材料科学 · 太阳能电池技术
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Journal of Materials Chemistry A · 2016 ·Vol. 4 ·期 35 ·13476-13481 · IF 8.262

Eliminating fine-grained layers in Cu(In,Ga)(S,Se)2 thin films for solution-processed high efficiency solar cells

Dandan Zhao,Qingmiao Fan,Qingwen Tian,Zhengji Zhou,Yuena Meng,Dongxing Kou,Wenhui Zhou,Sixin Wu

A non-hydrazine solution process has been considered as a promising way for the deposition of Cu(In,Ga)(S,Se)2(CIGSSe) thin films. However, from our previous work, the presence of a fine-grained layer in the absorber layer was shown to be an obstacle to further improve the solar cell efficiency. Here, an improved fabrication route is proposed to solve this problem. A mixture of Cu2S, In2Se3, Ga and Se was simultaneously dissolved in 1,2-ethanedithiol and 1,2-ethylenediamine, forming a homogeneous precursor solution to deposit CIGSSe nanocrystal films. By optimizing the selenization method by using rapid thermal processing (RTP) combined with an improved graphite box, large grains throughout the whole absorber layer were successfully obtained. Based on such a high-quality CIGSSe absorber layer, an encouraging power conversion efficiency of 11.8% has been achieved with a Jsc of 28.25 mA cm−2, a Voc of 596 mV and a FF of 69.79% and without an antireflection coating.

研究领域: 材料科学 · 能源技术
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CURRENT APPLIED PHYSICS · 2021 · IF 2.48

Bright all-solution-processed CsPbBr3 perovskite light emitting diodes optimized by quaternary ammonium salt

Ning Liu,Fangtian You,Chao Ji,Hongkang Gong,Qi Song,Jiasen Li,Chunjun Liang,Zhiqun He

Perovskite light-emitting diodes (PeLEDs) prepared by the all-solution-process are gradually coming into view due to their low cost and flexible production process. However, the performance of CsPbBr 3 device is limited by the high non-radiative recombination losses due to incomplete surface coverage and grain defects. Here a quaternary ammonium salt, tetrabutylammonium hexafluorophosphate (TBA-PF 6 ) was simultaneously introduced into perovskite emission layers (CsPbBr 3 ) and electron transport layer (TPBi (1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl) benzene) dissolved in ethyl acetate). As a result, the morphology and luminescence of CsPbBr 3 films were improved, and the energy level of TPBi was more conducive to charge transport. Consequently, the maximum luminance and current efficiency of the modified green-emitting PeLEDs are improved. Furthermore, the optimized device had an operating life of more than 20 min at an initial luminance of 1230 cd/m 2 . This work provides a simple and easy method to be scaled up for the development of low-cost all-solution-processed PeLEDs.

研究领域: 材料科学 · 光电技术
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CRYSTENGCOMM · 2016 ·Vol. 18 ·期 25 ·4744-4748 · IF 3.849

Fabrication of a Cu2MnSn(S,Se)4 thin film based on a low-cost degradable solution process

Wangen Zhao,Daocheng Pan,Shengzhong (Frank) Liu

Achieving micro-sized and closely packed grains is an essential requirement for high-performance chalcogenide thin film solar cells. Here, I2–II–IV–VI4 (Cu2MnSn(S,Se)4) (CMTSSe) thin films were successfully deposited by carrying out a simple, degradable solution-based process. The structure, composition, and morphology were characterized by powder X-ray diffraction (XRD), energy dispersive spectrometry (EDS), and scanning electron microscopy (SEM), and the Hall effect was also measured. These characterizations indicated that CMTSSe thin films may find applications in photovoltaic absorbing materials. In addition, different substrates were found to affect the morphology and compactness of the grains of the thin film.

研究领域: 材料科学 · 太阳能技术
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JOURNAL OF ALLOYS AND COMPOUNDS · 2016 · IF 3.014

Efficient hybrid solution strategy to fabricate Cu(In,Ga)(S,Se)2 solar cells

Yong Cui,Zhe Zhang,Xu Du,Wei Liu,Shi Liu,Yulin Deng,Xiaogu Huang,Gang Wang

Hybrid solution process is a powerful liquid deposited strategy merging the advantage of molecular precursor solution and nanocrystals ink. A novel hybrid solution approach is presented to fabricate Cu(In,Ga)(S,Se) 2 (CIGSSe) absorber layer using fully dissolved CIGS precursor solution and the CIGS nanocrystals. Such attractive strategy could significantly improve the single deposited thickness and enhance the quality of as-prepared CIGS film compared with the pure CIGS molecular precursor solution and the CIGS nanocrystals ink. Photovoltaic absorber layers based on CIGSSe chalcopyrite structure show the high-quality microstructural performance and are incorporated into solar cells with power conversion efficiency of 10.19%. The high performance of resulted optoelectronic devices represents a chance to extend the hybrid solution process to other inorganic semiconductor thin film solar cells.

研究领域: 材料科学 · 能源技术
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Advanced Electronic Materials · 2023 ·Vol. 9 ·期 8 ·2300205 · IF 6.2

Organic Charge-Transfer Complex based Microstructure Interfaces for Solution-Processable Organic Thin-Film Transistors toward Multifunctional Sensing

Zhiqi Liu,Zhengkun Ju,Shuang Ma,Wenju Li,Jinqiu Chen,Bo Yang,Jing Zhang

The development of organic field-effect transistor (OFET) based sensors is in high demand for flexible electronics. Herein, a new and feasible procedure to grow donor-acceptor complex microstructures sandwiched between the semiconducting and insulating layers is reported. To realize a well-distributed, uniform-sized structure through coating on the gold patterned substrate, the dopping ratio of the organic donor-acceptor complex in the host polymer is optimized. This method leads to one-step fabrication of high-performance semiconductor thin-films and a microstructured binary system attached to it via successful phase separation. The OFET sensors prepared by this technique demonstrate ideal hole-transport properties and good pressure response. In addition, the thermal-sensitivity is also revealed, which enables the device architectures to be multifunctional. This work opens a new avenue to manufacture functional microstructure and flexible OFET based pressure sensors.

CAS / MDL: 123-86-4 194-59-2
研究领域: 材料科学 · 电子工程 · 传感器技术
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Advanced Fiber Materials · 2025 · IF 21.3

Flexible, Sweat-Resistant Electrophoretic Fibers for Next-Gen Wearable Displays

Peng Lisha,Sheng Hailiang,Wang Ting,Zeng Debo,Zhang Yue,Shi Jintao,Zhou Tao,Yang Jinglan,Gu Yifan,Qin Zong,Yang Bo-Ru,Deng Shaozhi

Textile displays have emerged as a promising technology for wearable electronics, yet maintaining excellent display performance and durability in daily use remains a challenge. We present a highly flexible yarn-based electrophoretic display fiber (EPDF) for wearable textile displays, fabricated using a low-temperature solution process. The EPDFs feature a coaxial structure with a diameter of less than 500 μm, enabling seamless integration into fabrics while maintaining textiles’ lightweight and breathable properties. The EPDFs exhibit stable black and white states under driving, with potential for thermal management applications. A dual encapsulation layer provides protection against sweat and sebum, enhancing durability for daily use. These features make EPDFs a promising candidate for next-generation wearable textile displays. Graphical

CAS / MDL: 67-56-1 67-63-0 67-68-5
研究领域: 可穿戴电子 · 显示技术 · 柔性电子 · 智能纺织品
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