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Photonics Research · 2024 ·Vol. 12 ·期 9 ·1927-1936 · IF 6.6

Manipulating exciton confinement for stable and efficient flexible quantum dot light-emitting diodes

Xiaoyun Hu,Jianfang Yang,Yufei Tu,Yufei Tu,Zhen Su,Fei Zhu,Qingqing Guan,Zhiwei Ma

Flexible quantum dot light-emitting diodes (QLEDs) show great promise for the next generation of flexible, wearable, and artificial intelligence display applications. However, the performance of flexible QLEDs still lags behind that of rigid substrate devices, hindering their commercialization for display applications. Here we report the superior performance of flexible QLEDs based on efficient red ZnCdSe/ZnS/ZnSe QDs (A-QDs) with anti-type-I nanostructures. We reveal that using ZnS as an intermediate shell can effectively confine the exciton wavefunction to the inner core, reducing the surface sensitivity of the QDs and maintaining its excellent emission properties. These flexible QLEDs exhibit a peak external quantum efficiency of 23.0% and a long lifetime of 63,050 h, respectively. The anti-type-I nanostructure of A-QDs in the device simultaneously suppresses defect-induced nonradiative recombination and balances carrier injection, achieving the most excellent performance of flexible QLEDs ever reported. This study provides new insights into achieving superior performance in flexible QD-based electroluminescent devices.

研究领域: 材料科学 · 光电子学
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JOURNAL OF LUMINESCENCE · 2019 · IF 2.961

An efficient CsPbBr3 perovskite light-emitting diode by employing 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene as a hole and exciton blocking layer

Run Wang,Yue Zhang,Fu-Xing Yu,Yajie Dong,Ya-Lan Jia,Xing-Juan Ma,Qiang Xu,Yanhong Deng,Zu-Hong Xiong,Chun-Hong Gao

An efficient perovkite light-emitting diode (PeLED) is fabricated by incorporating 1,3,5-tri (m-pyrid-3-yl-phenyl)benzene (TmPyPB) between the emitting layer (EML) and the electron transporting layer (ETL), where TmPyPB plays an indispensable blocking effect on both excitons and holes. It shows a maximum current efficiency of 9.37 cd/A, and the corresponding external quantum efficiency (EQE) of 2.42% with a saturated green color Commission International de I'Eclairage (CIE1993) coordinated of (0.1279, 0.7951) under a driving voltage of 6 V. Meanwhile, the operational lifetime of the TmPyPB-based PeLED is improved to about 2.6-fold to that of the one with only the traditional ETL of aluminum 8-hydroxyquinolinate (Alq 3 ). The enhancements of electroluminescence (EL) performance are mainly attributed to better confinement of both the holes and the excitons in the EML, and more balanced carrier transportation in the TmPyPB-based PeLED. This work offers a feasible strategy to develop high performance optoelectronic devices.

研究领域: 材料科学 · 光电子学 · 纳米技术 · 半导体器件 · 功能材料
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ADVANCED FUNCTIONAL MATERIALS · 2025 · IF 19

Fully Thermal-Evaporated Perovskite Light-Emitting Diodes with Brightness Exceeding 240 000 Nits

Na Meng,Yajing Li,Xiaorong Shi,Ziqiang Wang,Junhao Liu,Yutian Xu,Yuanhao Cui,Xinwu Ke,Xueli Li,Boya Hu,Xue Min,Kui Xu,Zhelu Hu,Lingfeng Chao,Yingdong Xia,Qingxun Guo,Yonghua Chen

Thermally evaporated perovskite light-emitting diodes (PeLEDs) have emerged as a promising technology for next-generation display applications. However, achieving high luminance remains a critical challenge. In this study, a significant enhancement in the luminance of fully vacuum-evaporated PeLEDs is demonstrated by optimizing both the crystallinity of perovskite films and hole injection efficiency. A lateral 0D/3D Cs 4 PbBr 6 /MA x Cs 1-x PbBr 3 heterostructure is achieved via co-evaporation of MABr (MA + = CH 3 NH 3 + ), CsBr, and PbBr 2 . Theoretical calculations indicate that MAPbBr 3 , with its lower formation energy, preferentially forms and serves as a nucleation site for the growth of high-quality MA x Cs 1-x PbBr 3 , significantly improving crystallization. Excess CsBr and PbBr 2 react to form Cs 4 PbBr 6 , which passivates defects and confines excitons, thereby enhancing photoluminescence efficiency. The resulting perovskite films exhibit suppressed non-radiative recombination. Additionally, hole injection and transport efficiency are improved through p-type doping, ensuring sufficient carrier injection for high-luminance emission. As a result, the optimized PeLEDs achieve a maximum brightness of 246, 211 cd m − 2 , representing the highest level reported to date for thermally evaporated PeLEDs. These findings underscore the potential of thermally evaporated perovskites for high-brightness display and lighting applications.

研究领域: 材料科学 · 光电子学 · 显示技术 · 纳米技术
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