Fu Jing,Chen Kaixiang,Chang Shannan,Zhi Kanru,Gao Xuejiao,Wei Hao,Dan Yaping
Self-assembled molecular monolayer doping is an emerging doping technique. In this work, we investigated the activation rate and photoresponses of boron doped silicon by self-assembled molecular monolayer doping. By using low temperature Hall effect measurements and by secondary ion mass spectroscopy, we find that the activation rate of boron in these samples is in the range of 91%–54%, depending on the doping concentration. Interestingly, the photoresponsivity of the boron doped samples is also significantly higher than that of the phosphorus doped samples even though the same doping technique is used. The intriguing photoresponses are closely related to the trapping of photogenerated minority carriers by the defects in the p -type silicon.
Kai Li,Jie-Yin Zhang,Shannan Chang,Hao Wei,Jian-Jun Zhang,Yaping Dan
Self-assembled molecular monolayer doping may find important applications in doping FinFET and nanowire transistors due to its nature of being conformal, nondestructive, and self-limiting. However, carbon contamination from the dopant carrier molecules is often introduced into silicon, which will affect the device performance. Herein, we use carbon-free phosphorus chloride (PCl3) molecules as dopant carrier molecules to avoid the introduction of carbon contamination. The Hall effect measurements and secondary ion mass spectrometry show that the dopant activation rate is close to full activation even for samples with a low doping concentration.
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