Nanomaterials
·
2021
·Vol. 11
·期 10
·2705
·
IF 5.076
He-Chun Zhou,Yan-Ping Jiang,Xin-Gui Tang,Qiu-Xiang Liu,Wen-Hua Li,Zhen-Hua Tang
Herein, Bi4Ti3O12(BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device annealed in air reached approximately 102at 0.1 and −0.1 V. The RS performance was not significantly degraded after 100 consecutive cycles of testing. We also explored the factors affecting the RS behavior of the device. By investigating the RS characteristics of the devices annealed in O2,and in combination with XPS analysis, we found that the RS properties were closely related to the presence of oxygen vacancies. The devices annealed in air exhibited a markedly improved RS effect over those annealed in O2. According to the slope fitting, the conduction mechanism of the device was the ohmic conduction and space charge limited current (SCLC). This study is the first to successfully apply BIT ferroelectric films to the RS layers of memristors. Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.Keywords:Bi4Ti3O12;resistive switching;oxygen vacancies;conductive filaments;thin film
研究领域:
材料科学
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电子学
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纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2020
·Vol. 8
·期 40
·14155-14163
·
IF 7.059
Haibo Ye,Bo Sun,Ziyi Wang,Zhiyong Liu,Xuning Zhang,Xianhua Tan,Tielin Shi,Zirong Tang,Guanglan Liao
Organic–inorganic halide perovskite materials exhibit excellent memristive properties, such as high ON/OFF ratio and low switching voltage. However, the toxicity of lead and poor stability strictly limit their further commercial applications. Herein, a high-quality nontoxic and stable AgBiI4 perovskite film is successfully synthesized via a low-temperature dynamic hot casting method, and resistive switching (RS) memory devices based on AgBiI4 are reported for the first time. The RS memory devices with the ITO substrate exhibit typical bipolar nonvolatile memory behaviors with an ultralow operating voltage (≈0.16 V), high ON/OFF ratio (≈104), reversible RS by pulse voltage operation (>700) and long data retention (>104 s), superior to those of most of the other perovskite-based memory devices. Furthermore, a high performance flexible nonvolatile resistive switching (RS) memory device based on a AgBiI4 perovskite with a PEN substrate is fabricated. The flexible device also displays good stability under repeated bending tests (>1000 cycles). By analyzing the current–voltage responses, and the transmission electron microscopy, energy dispersive spectroscopy and X-ray photoelectron spectroscopy results, we propose a mechanism involving conducting filaments formed by Ag cations to describe the RS behavior of the Ag/PMMA/AgBiI4/ITO device. Our work demonstrates that AgBiI4 is promising for nonvolatile memory devices and paves the way for realizing low-power consumption flexible nonvolatile memory devices.
研究领域:
材料科学
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电子工程
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Communications
·
2023
·
IF 3.8
Yusheng Yang,Bai Sun,Guangdong Zhou,Chuan Ke,Jie Zhang,Yongzan Zhou,Shuangsuo Mao,Jiajia Qin,Yong Zhao
Since memristors have shown great application prospects in non-volatile memory, neural synapse, brain-like chips, artificial intelligence (AI) and quantum computers, the research of memristors has received extensive attention. In this work, the resistive switching (RS) device with Ag/SrTiO 3 (STO)/Ti structure was fabricated, and it can significantly improve the RS performance of device by doping Mn ions into STO to replace part of Ti ions . That is to say, the Ag/Mn-doped SrTiO 3 (SMTO)/Ti device exhibits larger resistance window and better retention at room temperature. Finally, through in-depth mechanistic analysis, a physical model of the conducting filament and Schottky emission was established to understand the charge transport mechanism and RS behavior of the device. In particular, it provides favorable factors for the migration of ions and electrons through the Mn doping because the substitution of Mn for Ti ions reduces the volume of the STO crystal while distorting its crystal shape since the ionic radius of Mn is smaller than that of Ti. This work provides an important way to improve the RS properties of ABO 3 -type perovskite-based resistive random access memory (RRAM), and helps to explore the cutting-edge applications of high-performance RS devices in information processing and AI.
研究领域:
材料科学
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电子工程
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人工智能
✓ 已验证
产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2025
·
IF 13.2
Jihong Bian,Kangning Wang,Jinbo Zhang,Yanzhong Zhen,Jianwei Wang,Yaodong Yang,Feng Fu
Shortage of energy and computing power puts forward requirements for developing multifunctional devices. Inherent defects greatly limit the development of transition metal oxides as promising candidate for energy storage and memory applications. We propose a facile strategy to modify MnO 2 via controlling the doping amount of Co, effectively regulating the structural, magnetic and electrical properties. The 15.78 %Co-MnO 2 is nano-flower-like in δ phase with a specific surface area of 123.86 m 2 g −1 and rich oxygen vacancies. Its corresponding memristors exhibit stable and repeatable, sweep speed-dependent and voltage magnitude-dependent volatile bidirectional threshold switching behavior with high switching ratio of 10 4 over 1100 cycles, which is attributed to the formation and rupture of conductive filaments formed by a large number of oxygen vacancies and a small number of Co ions under the electric field. By controlling the applied voltage and compliance current, multilevel resistance states are shown. Besides, 15.78 %Co-MnO 2 also exhibits excellent zinc storage performance, due to its large specific surface area, nano-sized structure and abundant oxygen vacancies. This work lays a foundation for developing high-performance and low-dimensional memristor devices and capacitors, and paves a way for low-power multifunctional devices.
研究领域:
材料科学
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电子工程
✓ 已验证
产品关联
DOI
高影响因子
iScience
·
2022
·
IF 6.107
Guangdong Zhou,Xiaoyue Ji,Jie Li,Feichi Zhou,Zhekang Dong,Bingtao Yan,Bai Sun,Wenhua Wang,Xiaofang Hu,Qunliang Song,Lidan Wang,Shukai Duan
Memristor-based Pavlov associative memory circuit presented today only realizes the simple condition reflex process. The secondary condition reflex endows the simple condition reflex process with more bionic, but it is only demonstrated in design and involves the large number of redundant circuits. A FeO x -based memristor exhibits an evolution process from battery-like capacitance (BLC) state to resistive switching (RS) memory as the I-V sweeping increase. The BLC is triggered by the active metal ion and hydroxide ion originated from water molecule splitting at different interfaces, while the RS memory behavior is dominated by the diffusion and migration of ion in the FeO x switching function layer. The evolution processes share the nearly same biophysical mechanism with the second-order conditioning. It enables a hardware-implemented second-order associative memory circuit to be feasible and simple. This work provides a novel path to realize the associative memory circuit with the second-order conditioning at hardware level.
研究领域:
神经科学
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电子工程
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材料科学
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS CHEMISTRY
·
2011
·Vol. 22
·期 2
·520-526
·
IF 5.101
Benlin Hu,Fei Zhuge,Xiaojian Zhu,Shanshan Peng,Xinxin Chen,Liang Pan,Qing Yan,Run-Wei Li
A new polyimide bearing the functional pendant 9-phenyl-9H-carbazole moieties, poly[2,2-(4,4′-di(N-benzyloxycarbazole)-3,3′-biphenylene)propane-hexafluoroisopropylidenediphthalimide] (6F-BAHP-PC PI), has been designed as a functional material for resistance memory devices. The ITO/6F-BAHP-PC PI/Ag memory device exhibits nonvolatile resistive switching (RS) with a high ON/OFF ratio (>106), long retention time (>6 × 104 s), good endurance, and low power consumption (∼100 μW). In situconductive atomic force microscopy measurements show that the RS of 6F-BAHP-PC PI originates from the formation/rupture of nanoscale conducting filaments.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
Advanced Materials Interfaces
·
2022
·Vol. 10
·期 2
·2201513
·
IF 6.389
Zehen Liu,Pengpeng Cheng,Ruyan Kang,Jian Zhou,Xian Zhao,Jia Zhao,Zhiyuan Zuo
The rapid development of artificial intelligence (AI) requires processing vast amounts of complex information, which has accelerated the exploration of neuromorphic computing systems. Artificial neuromorphic synapses based on memristors of organic–inorganic halide perovskites (OHPs) potentially exploit a niche area for brain-inspired neuromorphic computing, which can be operated as biological synapses to realize signal processing. Here, MAPbI 3 -based memristors with reliable resistance states triggered by electric fields or photons are reported. A model for resistive switching (RS) originated from conductive filaments (CFs) based on intrinsic defect migrations is proposed. Importantly, the unique photoresponsive characteristic provides the opportunity to enhance the RS through multifunctional photo-coupling. Enhanced by monochromatic illumination, memristors exhibit RS with remarkable characteristics such as ultralow operating voltage, high ON/OFF ratio (4.3 × 10 3 ), small HRS/LRS variation coefficient (29.91%/13.82%), stable endurance (10 4 cycles), long retention time (10 5 s), and ultralow power consumption. Moreover, photons can modulate the nonvolatile devices to maintain a great ON/OFF ratio over 9 days under ambient conditions without any encapsulation. The research presents plausible applications of memristors in coupling ions, electrons, and photons, thus contributing to applicability for multifunctional optoelectronics and optogenetics tunable neuromorphic systems.
研究领域:
材料科学
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电子工程
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神经科学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Zipan Jiao,Xinglan Zhou,Junjie Yu,Xiaoyan Lan,Yi Shi,Jitong Li,Bingxin Liu,Yongcheng Li,Guilin Chen,Riming Hu,Peng Zhang,Benhua Xu
This research investigates the resistive switching (RS) properties of resistive random-access memory (RRAM) devices incorporating MoS2 quantum dots (QDs) and MoS2 nanosheets. The analysis reveals that reducing the size of MoS2 nanosheets to the size of QDs enhances the bandgap, surface–volume ratio, and the number of edge states, thereby providing additional electron trapping sites for the formation and rupture of conductive filaments (CFs) in RRAM devices. The Al/MoS2 QDs–PVA/ITO/glass devices exhibit enhanced switching ratios and memory windows in comparison to RRAM devices based on MoS2 nanosheets. The enhanced RS performance of the MoS2 QDs can be attributed to their ultra-small size, which enables the concentration of the surrounding electric field and a higher density of sulfur vacancies that facilitate the formation of CFs. However, it is important to highlight that high-temperature RS performance tests indicate a decline in device performance as the temperature increases. The findings presented herein demonstrate that the utilization of MoS2 QDs provides a novel avenue for significantly enhancing the data storage capacity of MoS2-based RRAM devices.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale
·
2024
·Vol. 16
·期 8
·4148-4156
·
IF 5.8
Qing Dai,Zhenwang Luo,Guohua Ma,Yuchen Miao,Xu Wang,Zhenfu Zhao,Feiyu Zhao,Fei Zheng,Liqiang Zhu,Ziyang Hu
The escalating interest in low-dimensional perovskites stems from their tunable optoelectronic traits and robust stability. The pursuit of multifaceted optoelectronic devices holds substantial importance for energy-efficient and space-constrained systems. This investigation showcases the realization of multifunctional two-dimensional perovskite solar cells, incorporating transient light detection and resistive switching functions within a single device, achievable by facile external bias adjustments. Serving as a photodetector, the device exhibits commendable self-powered photodetection attributes, including an exceptionally low dark current density of 1 nA mm−2, a remarkable specific detectivity of 7.67 × 1012 Jones, a swift response time of 0.60 μs, and an expansive linear dynamic range of 72 dB. As a memristor, it showcases enduring performance across 4 × 102 cycles, a substantial on/off ratio of 106, and a rapid operation time of less than 1 μs. This endeavor unveils a pioneering avenue for advancing high-performance, air-stable multifunctional two-dimensional perovskite electronics.
研究领域:
材料科学
·
电子工程
·
能源技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Electronic Materials
·
2020
·Vol. 6
·期 11
·2000799
·
IF 6.593
Hongjun Wang,Jiaquan Lin,Yuanyuan Zhu,Xiong Zeng,Hong Wei,Pengwei Cheng,Hongbing Lu,Yong Liu,Rui Xiong
Resistive switching (RS) devices have evolved as one of the most promising candidates in the memory filed due to their excellent endurance and retention, fast switching speed, and extra-high storage density capability. However, the coexistence of toxic lead cations and low RS performance have largely limited the application of halide perovskite in nonvolatile memory filed. Herein, the lead-free all-inorganic perovskite CsSnBr 3 films are synthesized on flexible polyimide (PI) substrates through a one-step chemical vapor deposition (CVD) method to construct environmentally friendly RS devices. The RS devices with Pt/CsSnBr 3 /Pt/PI structure exhibit reliable and reproducible bipolar RS characteristics with an ultralow set/reset voltage (≈0.2/−0.15 V) and a high on/off ratio (≈10 5 ). Additionally, the RS devices are further tested by robust current–voltage curves under consecutive flexing cycles, exhibiting high mechanical bendability and electrical reliability. This work demonstrates that lead-free all-inorganic perovskite CsSnBr 3 film is a good candidate as switching media for applications in the next-generation environmentally friendly RS devices and opens an avenue for future flexible electronics.
研究领域:
材料科学
·
电子工程
·
环境科学
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2023
·
IF 6.7
Fei Xue,Wei He,Jihui Wang,Wenbin Hu
Al x Zn 1- x O films were prepared on SS304 by using sol–gel method combined with spinning and heat treatment. The surface morphology, composition and structure of films were observed and characterized by scanning electron microscopy, X-ray diffractometer and Fourier transform infrared spectroscopy. The oxygen vacancy content and semiconductor type of Al x Zn 1- x O films were determined by X-ray photoelectron spectroscopy, electronic para -magnetic resonance spectroscopy, Mott-Schottky curve and density function theoretical calculation. The corrosion resistance and resistive switching performance of Al x Zn 1- x O films were measured by using electrochemical methods and immersion-polarisation experiments. The results show that the prepared Al x Zn 1- x O films are in n -type semiconductor material with a homogeneous and dense surface, the oxygen vacancy content is decreased with the increasing of Al dopping content. The corrosive resistance of Al x Zn 1- x O film was increased with the increasing of Al doping content with the best corrosion resistance at the doping content of 4% Al. During the immersion process, the corrosion resistance of Al x Zn 1- x O film was firstly increased and then decreased. The corrosion resistance of Al x Zn 1- x O films could be switched in the high and low resistance states under the immersion-polarization process by adjusting of the oxygen vacancy content in film.
研究领域:
材料科学
·
电化学
·
表面工程
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2022
·
IF 7.392
Fei Xue,Fengzhu Zhao,Jihui Wang,Wenbin Hu
Zn 1- x Cr x O resistive switching film with different Cr content was prepared on SS304 substrate by sol–gel method combined with spin plating and heat treatment. The surface morphology, composition, structure, semiconductor type and oxygen vacancy concentration of Zn 1- x Cr x O films were observed and analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Mott-Schottky curves, X-ray photoelectron spectroscopy (XPS) electron paramagnetic resonance spectroscopy (ESR) and density functional theory (DFT) calculation. And the corrosion resistance of Zn 1- x Cr x O film were investigated by polarization curves and electrochemical impedance spectroscopy (EIS). The results show that the prepared Zn 1- x Cr x O films have a uniform dense surface which belongs to n -type semiconductor type, and the oxygen vacancy concentration in the films increases with the increase of Cr content. With the increasing of Cr content, the corrosion resistance of films is decreased. During the immersion process, the corrosion resistance of Zn 1- x Cr x O film is firstly increased and then decreased with increasing immersion time. By applying immersion and polarization treatment the corrosion resistance of Zn 1- x Cr x O film could be regulated between the high and low resistance states (HRS and LRS) due to the creation and disappearance of oxygen vacancies in the film.
研究领域:
材料科学
·
电化学
·
表面科学
✓ 已验证
产品关联
DOI
高影响因子
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