Polymers
·
2024
·Vol. 17
·期 1
·50
·
IF 4.7
Jianyu Wu,Fangzhou Chen,Jiahao Liu,Rui Chen,Peijiang Liu,Hao Zhao,Zhenbo Zhao
During the thermal aging process of epoxy resin, microcracks, interfacial delamination, and warpage are the key factors leading to semiconductor device damage. Here, epoxy-resin specimens (EP-Ss) and epoxy-resin/silicon-wafer composites (EP-SWs) were prepared to analyze the distribution of residual stress (RS) in epoxy resin and its thermal aging process changes. The uniaxial tensile approach and Raman spectroscopy (RAS) showed that the peak shift of aliphatic C-O in EP-Ss was negatively correlated with the external stress, and that the stress correlation coefficient was −2.76 × 10−2cm−1/MPa. Then, RAS was used to evaluate the RS distribution of EP-SWs, obtaining a high-resolution stress-distribution image of 50 × 50 pixels and revealing a strong stress concentration at the interface between the epoxy resin and the silicon wafer. Additionally, Fourier transform infrared spectroscopy (FTIR), Differential scanning calorimetry (DSC), Field-emission scanning electron microscopy (FE-SEM), and RAS were used to analyze the chemical composition, molecular structure, interfacial microstructure, and RS of the epoxy resin during the thermal aging process. With the increase in the thermal aging time, the epoxy resin underwent secondary curing, the RS at the interface changed from tensile stress to compressive stress, and cracks were formed. The results illuminate the effect of the thermal aging process on the interface-failure mechanism of composite materials, aiding in the reliability evaluation and safety design of semiconductor devices.
研究领域:
材料科学
·
半导体工程
·
化学工程
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产品关联
DOI
PubMed
高影响因子
ACTA MECHANICA SOLIDA SINICA
·
2024
·
IF 2
Liu Qiuhong,Sun Shuo,Wu Xiang,Chen Zhiqiang,Guo Hongjie,Duan Chen,Wang Zhengjin
Brittle materials, such as silicon, glass, and ceramics, are widely used in engineering via adhesive bonding. The assessment of adhesive strength of brittle materials to other adherends is essential for their applications. Compared with metals and composites, for which standard testing methods have been established, the experimental method for brittle adherends has been much less explored. During the adhesive strength test, the brittleness of these materials makes them prone to failure, rather than the interface. It remains a challenge to measure the adhesive strength of brittle adherends. Here we develop an experimental method to address this issue by using a strap joint specimen with a backing layer. We use a single crystal silicon wafer and two PCB (printed circuit board) strips as adherends to make a strap joint specimen. A steel backing layer is glued to the silicon wafer to prevent the failure of silicon. This method enables the measurement of adhesive strength up to 35 MPa. In contrast, that without backing layer can only measure the adhesive strength below 10 MPa. It is found that the backing layer can reduce the stress in the silicon remarkably, while it has much less effect on the stress in the adhesive layer. We confirm that the backing layer has a negligible effect on the measured adhesive strength but expands the working space greatly. Combining finite element analysis and experiments, we establish the phase diagram for the failure modes. This work provides guidance for the measurement of adhesive strength of brittle materials.
研究领域:
工程学
·
材料科学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Energy Chemistry
·
2013
·
IF 0
Yi Lu,Xiao-Yu Yang,Bao-Lian Su
Monolayer chemically converted graphene (CCG) nanosheets can be homogeneously self-assembled onto silicon wafer modified by 3-aminopropyl triethoxysilane (APTES) to form very thin graphene film. The CCG film was characterized by FT-IR, XRD , SEM, TEM and AFM. Results show that CCG sheets formed monolayer film after assembled onto silicon wafer and there is a very tight chemical bond between sheets and wafer. Furthermore, the electrical measurements revealed that the monolayer graphene film has an excellent electrical conductivity .
研究领域:
材料科学
·
物理化学
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DOI
ADVANCED MATERIALS
·
2014
·Vol. 26
·期 16
·2501-2507
·
IF 15.409
Bin Su,Cong Zhang,Shuoran Chen,Xingye Zhang,Linfeng Chen,Yuchen Wu,Yiwen Nie,Xiaonan Kan,Yanlin Song,Lei Jiang
Graphical Alignment of 1D assemblies of a wide variety of nanoparticles (e.g., metal, metal oxide, semiconductor quantum dots, or organic microspheres) in one direction upon diverse substrates (including industrial silicon wafers and transparent glass plates) by a general strategy is demonstrated. This sandwich method provides an efficient way of rapidly and precisely assembling nanoparticles on a large scale (up to 10 cm × 10 cm) for device applications.
研究领域:
材料科学
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
DALTON TRANSACTIONS
·
2025
·
IF 3.3
Xiaohai He,Bo Gao,Qingyuan Wu,Chengrui Xin,Junjie Xue,Fangwei Lu,Xin-Ping Qu,Simin Li,Fan Zhang,Hui Shen
Chemical mechanical polishing (CMP) represents one of the most important steps in the manufacturing of integrated circuits, and high surface quality is always required for the CMP processes of shallow trench isolation (STI) structures. Herein, a new series of polydopamine (PDA)-coated cerium oxide core–shell nanoparticles has been developed as efficient and non-damaging abrasives for CMP of SiO2 on the surface of silicon wafers. The composite abrasives with the structure of SiO2@CeO2@PDA have been fabricated in a simple manner and thoroughly characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The SiO2 core enhances the content of Ce3+ in the abrasives, while the water-soluble PDA layer facilitates the interaction between the abrasives and SiO2 dielectrics. As a result, the wafers polished with SiO2@CeO2@PDA not only achieved a high polishing rate, but also exhibited a high surface quality (Ra = 0.109). This study not only presents a new efficient and non-damaging type of cerium oxide abrasive for CMP, but also highlights the potential of the surface coordination strategy in the fabrication of advanced abrasives for the manufacturing of integrated circuits.
研究领域:
材料科学
·
半导体制造
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产品关联
DOI
PubMed
高影响因子
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
·
2023
·
IF 5.2
Wenxiang Xie,Zhenyu Zhang,Xin Chen,Shiqiang Yu,Chunjing Shi,Hongxiu Zhou,Wei Wen
For obtaining a sub-nanometer surface, the material removal rate (MRR) is usually very low. It is challenging to achieve sub-nanometer surface with high MRR. To overcome this challenge, in this work, different cations are considered to improve the MRR during CMP for silicon (Si) wafer. When the concentration of NH 4 + ions is 125 mmol/L, the MRR of Si wafer reaches 1687 Å/min, increasing 107.8 % compared with the controlled group. It is noted that nanometer silica abrasives remain at a good monodisperse state in CMP. The surface roughness Sa after CMP on a Si wafer is 0.744 nm under a measurement area of 868 × 868 µm 2 . COF data and X-ray photoelectron spectroscopy indicate that NH 4 + ions reduce the electrostatic repulsion between silica nanoparticles and Si, whilst accelerating chemical reactions between Si and developed slurry. This work suggests a novel approach to fabricating sub-nanometer surface of Si wafer with high MRR, which is beneficial for the potential use in semiconductor and microelectronics industries.
研究领域:
材料科学
·
半导体技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2020
·Vol. 31
·期 3
·2686-2690
·
IF 2.22
Cao Liqi,Yang Ning,Li Shizheng,Ye Xiaojun,Yuan Xiao,Li Hongbo,Tong Hua
In the present work, alumina gel was developed for passivating silicon wafers. The alumina gel was prepared by sol–gel method with aluminum sec-butoxide as precursor. After coating, rapid thermal process (RTP) was conducted to activate the passivation effect. X-ray photoelectron spectroscopy and C–V curve were executed to evaluate film properties. The peak at 74.35 eV confirmed the formation of Al 2 O 3 . Meanwhile, a small peak at low binding energy decreased with the growth of annealing temperature, which was ascribed to the escape of hydrogen, leading to the decline of effective lifetime after 700 °C. The highest fixed charge (Q f ) of − 1.16e12 cm −2 and superior interface defect density at mid gap (D it ) of 1.98e12 cm −2 eV −1 were obtained at the annealing temperature of 700 °C, contributing to the highest effective minority carrier lifetime of 292 µs. The present work will be helpful to provide a more cost-effective technique for Al 2 O 3 passivation.
研究领域:
材料科学
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半导体物理
✓ 已验证
产品关联
DOI
高影响因子
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
·
2016
·
IF 2.76
Lixia Zhang,Hongli Li,Guang Chu,Lan Luo,Jing Jin,Bing Zhao,Yuan Tian
The silver nanowires (AgNWs) were prepared through the method of polyol. The prepared AgNWs were characterized by TEM image, UV–vis spectroscopy and X-ray diffraction (XRD). AgNWs were assembled onto silicon wafer through entropy-driven self-assembly method. The 521 cm −1 band of silicon was used as internal standard band. The SERS performance of AgNWs-Si substrate was characterized by using R6G as the probe molecule, and the SERS substrate is employed to detect 6-MP. The linear concentration range of 6-MP is 0.05–3.8 μmolL −1 and the corresponding correlation coefficient is 0.994. The method is satisfactory for detecting 6-MP in two kinds of commercial tablets.
研究领域:
分析化学
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纳米技术
·
药学
✓ 已验证
产品关联
DOI
高影响因子
POLYMER COMPOSITES
·
2015
·Vol. 38
·期 8
·1616-1623
·
IF 1.632
Zhongkai Hu,Lei Zu,Yanhua Jiang,Huiqin Lian,Yang Liu,Xiaodong Wang,Xiuguo Cui
A novel high specific capacitance mesoporous polyaniline (PANI)/silica platelet nanocomposite electrode material for supercapacitors was prepared by an impregnation polymerization. The initiator was embedded firstly in the mesoporous silica pores and channels and then initiated the polymerization of aniline (AN). Compared with the other mesoporous silica materials, the mesoporous silica platelets possess a relative shorter mesoporous channels, leading an easier penetration process of initiator and AN to the inner of mesoporous silica platelets. The structures, morphologies, and electrochemical properties of the nanocomposites were thoroughly studied by a series of methods, such as X-ray diffractometry, scanning electron microscope, nitrogen adsorption-desorption tests, infrared spectroscopy, thermogravimetric analysis, and electrochemical measurements. The results revealed that the PANI existed both in the inner and surface of the mesoporous silica platelets, leading a continual conductive network and a large specific surface area. These features provide the nanocomposites an excellent electrochemical performance. The biggest specific capacitance is 1,598 F g −1 at a current density of 0.5 A g −1 . POLYM. COMPOS., 38:1616–1623, 2017. © 2015 Society of Plastics Engineers
研究领域:
材料科学
·
电化学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2014
·
IF 3.552
Xiang Liu,Heming Cheng,Tiantian Zhao,Changchang Zhang
Fluorescent silicon quantum dots (SiQDs) could be prepared by reduction of hydrogen silsesquioxane, etching of silicon powers with wetting chemistry techniques or electrolysis of a wafer catalyzed by polyoxometalates. Chemical modifications are indispensable for the stability of the SiQDs photoluminescence and wider applications of SiQDs. Facile routes of manufacturing SiQDs derived from a silicon wafer and its surface functionalization by N-hydroxysuccinimide (NHS) esters were described in this work in detail. Firstly, the porous silicon chip was prepared by nanosilver-assisted electroless chemical etching. Then the chip was etched successively with hydrofluoric acid/nitric acid solutions until it emitted dazzling red fluorescence which claimed the achieved SiQDs on silicon substrates (SiQDs/Si). Finally, surface NHS esters were fabricated on such an SiQDs/Si chipthrough stepwise modifications, which were tested by the amidation between the NHS esters and n-octylamine. The fluorescence emission of the SiQDs/Si chip almost remained unchanged during the successively chemical modifications, which indicated the SiQDs had capabilities of enduring the sustained high temperature and organic media. Meanwhile, the SiQDs did not leave from the silicon substrate during the surface tuning. The SiQDs obtained by ultrasonication of an SiQDs/Si chip in water were investigated by transmission electron and atomic force microscopies.
研究领域:
材料科学
·
化学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Manufacturing Processes
·
2023
·
IF 6.2
Wenxiang Xie,Zhenyu Zhang,Li Wang,Xiangxiang Cui,Shiqiang Yu,Hongjiu Su,Shudong Wang
It is a challenge to enhance the material removal rate (MRR) during the chemical mechanical polishing (CMP) of silicon wafers , with increasing the size of a wafer and reducing the feature size of integrated circuit. In this study, potassium ions were employed to improve the MRR of silicon wafers effectively in CMP, which was performed by developed slurry, consisting of monodisperse alkaline colloidal silica , organic/inorganic acids and inorganic salts. Experimental results show that the developed slurry has a good stability and dispersity for colloidal silica . The MRR of silicon wafers in CMP was increased by 53.42 % to 1778.71 Å/min, when the concentration of potassium ions was 125 mmol/L. In addition, the surface roughness Sa was also improved slightly to 0.887 nm. The CMP mechanism was investigated using X-ray photoelectron spectroscopy, friction coefficient meter and electrochemical analysis. It reveals that potassium ions could change the electrical characteristics of the formed soft layer on the silicon wafer surface, dissolving the soft layer and oxidizing the surface of silicon.
研究领域:
材料科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
LANGMUIR
·
2013
·
IF 4.187
Dongsheng Wang,Danyang Xie,Wenbin Shi,Shudong Sun,Changsheng Zhao
A photoresponsive molecularly imprinted system was prepared on a silicon wafer substrate surface via the host–guest complex of grafted 4-(3-triethoxysilylpropyiureido)azobenzene (TSUA) and mono-6-deoxy-6-((p-chlorosulfonyl)-benzoic acid)-β-cyclodextrin (CBA−β-CD), and the acid–base pair interactions/hydrogen bonds between CBA−β-CD and the template molecules, including theophylline (TPE) and 4-hydroxybenzoic acid (4-HA). A molecular imprinting cycle “imprinting → extracting → uptaking → shuffling” was also defined in the study, the processes of uptaking and shuffling were investigated in detail by equilibrium binding experiments, and the Langmuir adsorption isotherm and Scatchard equation were used to evaluate the binding affinity and the theoretical binding sites of the molecularly imprinted (MIS), nonimprinted (NIS), and pure (PS) silicon wafer substrates. Compared with the NISs and PSs, the MISs showed a significantly higher adsorption capacity for the template molecules. More importantly, the MISs showed a reimprinted ability; after the process of shuffling, the molecularly imprinted systems on the substrate surface were destroyed, and new imprinted systems could be fabricated for the recognition of other template molecules after washing the substrates under irradiation at 450 nm. Moreover, the selective adsorption for the MISs was investigated, which indicated that the MISs showed specific affinity to the template molecules (TPE or 4-HA).
研究领域:
材料科学
·
分子生物学
✓ 已验证
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）