JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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2022
·Vol. 33
·期 19
·15894-15903
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IF 2.779
Hu Zeqing,Xu Huihong,Lin Yangjian,Liu Yu,Xu Junsheng,Li Zhou,Song Jiming
Currently, Cu 2 GeS 3 has been obtained through solid-state reaction. However, the pure phase Cu 2 GeS 3 synthesized still faces challenges due to the low boiling point of the sulfur element. Herein, we have prepared pristine Cu 2 GeS 3 by a two-step method. Firstly, the pure phase GeS 2 was synthesized by solvothermal method and then used the freshly as-synthesized GeS 2 as raw material to react with copper powder to fabricate pure phase Cu 2 GeS 3 . Further, the thermoelectric properties of Cu 2 GeS 3 crystal have been explored. At room temperature, the electric resistance value measured by multimeter was ~ 2634 Ω for intrinsic Cu 2 GeS 3 crystal, which exceeded the instrument (electrical conductivity/Seebeck coefficient) test range of 0–2000 Ω, so there is no relevant report in the thermoelectric field about Cu 2 GeS 3 crystal. In order to improve its conductivity, Cu 2 GeS 3 crystal is alloyed with a small amount of Te powder to obtainable Cu 2 GeS 3− x Te x samples, which have obvious thermoelectric properties. By adjusting the content of Te, finally, the electrical conductivity of the Cu 3 GeS 2.6 Te 0.4 sample reached 364.20 S m −1 and the figure-of-merit ZT max value of ~ 0.12 were obtained at 816 K.
研究领域:
材料科学
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能源科学
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DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2024
·
IF 9.4
Yousen Wu,Ying Wang,Guozhe Sui,Dongxuan Guo,Dawei Chu,Guang Xu,Jinlong Li,Yue Li,Dong-Feng Chai
Nowadays, the inherent re-stacking nature and weak d-p hybridization orbital interactions within MXene remains significant challenges in the field of electrocatalytic water splitting, leading to unsatisfactory electrocatalytic activity and cycling stability. Herein, this work aims to address these challenges and improve electrocatalytic performance by utilizing cobalt nanoparticles intercalation coupled with enhanced π-donation effect. Specifically, cobalt nanoparticles are integrated into V 2 C MXene nanosheets to mitigate the re-stacking issue. Meanwhile, a notable charge redistribution from cobalt to vanadium elevates orbital levels, reduces π*-antibonding orbital occupancy and alleviates Jahn-Teller distortion. Doping with tellurium induces localized electric field rearrangement resulting from the changes in electron cloud density. As a result, Co-V 2 C MXene-Te acquires desirable activity for hydrogen evolution reaction and oxygen evolution reaction with the overpotential of 80.8 mV and 287.7 mV, respectively, at the current density of −10 mA cm −2 and 10 mA cm −2 . The overall water splitting device achieves an impressive low cell voltage requirement of 1.51 V to obtain 10 mA cm −2 . Overall, this work could offer a promising solution when facing the re-stacking issue and weak d-p hybridization orbital interactions of MXene, furnishing a high-performance electrocatalyst with favorable electrocatalytic activity and cycling stability.
研究领域:
材料科学
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电化学
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DOI
PubMed
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2024
·
IF 9.4
Hao Wang,Xueya Deng,Alina Bari,Mingzheng Gu,Man Lin,An Gao,Xiaomin Huang,Xiaojun Zhang
In order to enhance the energy efficiency of water electrolysis, it is imperative to devise electrocatalysts for oxygen evolution reaction that are both non-precious metal-based and highly efficient. Efficient catalyst design is generally based on electronic structural engineering. Considering the electronegativity disparity between selenium (Se) and tellurium (Te), the tunable bandgaps, and the conductive metallic nature of Te . We designed a material wherein Te atoms are uniformly doped onto the surface of Cobalt tetra selenide (Co 3 Se 4 ) nanorods, leading to the synthesis of a defect-rich material. Experimental results demonstrate that Te doping in Co 3 Se 4 increases active sites and optimizes the electronic structure of Co cations, enhancing the design of multi-defect structures. This promotes the generation of the Co(oxy) hydroxide (CoOOH) active phase, enhancing catalytic activity by maximizing the binding strength between Co sites and oxygenated intermediates. Te-Co 3 Se 4 nanorods exhibit good catalytic activity for oxygen evolution reactions, with an overpotential of 269 mV at a driving current density of 50 mA cm −2 and excellent stability in alkaline media (over 100 h). This discovery indicates the feasibility of strategically combining various imperfect structures, thereby unlocking the latent potential of diverse catalysts in electrocatalytic reactions.
研究领域:
材料科学
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电化学
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DOI
PubMed
高影响因子
Advanced Optical Materials
·
2025
·Vol. 13
·期 17
·2500216
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IF 7.2
Xin Wang,Le-Yang Dang,Xu Zhang,Jia-Qi Zhu,Gui-Gen Wang
Doping can effectively adjust the energy band structure of a semiconductor, thereby influencing its electrical and optical properties. In this study, density functional theory is employed to calculate the crystal structure, electronic configurations, energy bands, and optical properties of tellurium-doped Bi 2 O 2 Se (Bi 2 O 2 Se 1-x Te x ), demonstrating that Te substitution lowers the conduction band, reducing the bandgap. Then 2D Bi 2 O 2 Se 1-x Te x nanosheets are synthesized via organic ion template-guided solution growth method, with Te doping controlled by the Te/Se molar ratio. Optical spectroscopy confirmed that tellurium doping significantly modulates the electronic properties of Bi 2 O 2 Se. When the doping molar concentration is 30%, its bandgap decreases to 0.57 eV. Therefore, Bi 2 O 2 Se 1-x Te x nanosheet-based photodetector demonstrates obvious enhancement of the photoelectric response in the near-infrared region. Notably, Bi 2 O 2 Se 0.7 Te 0.3 photodetector demonstrates broadband photosensitivity across 650–1550 nm, with high responsivity of 32.87 A W −1 and enhanced detectivity of 8.89 × 10 9 Jones at 1060 nm. The device also features a short response time of 16.8/11 µs at 1550 nm. Moreover, the photo-response of the detector shows reliable working stability. Finally, the photodetector is utilized for single-pixel imaging, showcasing its high-contrast infrared light detection capability. These results indicate that Bi 2 O 2 Se 1-x Te x is a promising material for high-sensitivity infrared light detection applications.
研究领域:
材料科学
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凝聚态物理
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光学工程
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DOI
高影响因子
SENSORS
·
2025
·Vol. 25
·期 8
·2530
·
IF 3.5
Junting Zhang,Jiexin Chen,Shuojia Zheng,Da Zhang,Shaojuan Luo,Huixia Luo
HighlightsWhat are the main findings?A facile chemical strategy was developed for the synthesis of two-dimensional Te-doped GeH nanostructures with atomic-level precision and structural integrity.The Te-GeH-based photoelectrochemical (PEC) photodetectors exhibit high responsivity (708.5 µA/W) and ultrafast response speeds (92 ms rise/526 ms decay) under zero-bias conditions, demonstrating excellent broadband photoresponse.What is the implication of the main finding?The introduction of Te atoms enables effective modulation of the electronic structure in the GeH system. Owing to the comparable atomic radius between Te and Ge, efficient doping is achieved without disrupting the host lattice. In addition, the high electronegativity of Te induces electron redistribution and facilitates the formation of a built-in electric field, thereby optimizing charge separation and transport behavior. This approach provides a novel pathway for the functional design of Zintl-phase-derived two-dimensional materials, with broad implications for advanced optoelectronic applications.This doping strategy significantly enhances the photoelectrochemical performance of GeH-based photodetectors and enables the scalable fabrication of 2D nanomaterials with tunable optoelectronic properties. The resulting Te-GeH nanostructures offer improved carrier dynamics and reduced recombination, serving as a promising material platform for next-generation self-powered broadband photodetectors.Two-dimensional (2D) Xenes, including graphene where X represents C, Si, Ge, and Te, represent a groundbreaking class of materials renowned for their extraordinary electrical transport properties, robust photoresponse, and Quantum Spin Hall effects. With the growing interest in 2D materials, research on germanene-based systems remains relatively underexplored despite their potential for tailored optoelectronic functionalities. Herein, we demonstrate a facile and rapid chemical synthesis of tellurium-doped germanene hydride (Te-GeH) nanostructures (NSs), achieving precise atomic-scale control. The 2D Te-GeH NSs exhibit a broadband optical absorption spanning ultraviolet (UV) to visible light (VIS), which is a critical feature for multifunctional photodetection. Leveraging this property, we engineer photoelectrochemical (PEC) photodetectors via a simple drop-casting technique. The devices deliver excellent performance, including a high responsivity of 708.5 µA/W, ultrafast response speeds (92 ms rise, 526 ms decay), and a wide operational bandwidth. Remarkably, the detectors operate efficiently at zero-bias voltage, outperforming most existing 2D-material-based PEC systems, and function as self-powered broadband photodetectors. This work not only advances the understanding of germanene derivatives but also unlocks their potential for next-generation optoelectronics, such as energy-efficient sensors and adaptive optical networks.
研究领域:
材料科学
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光学工程
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纳米技术
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DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Jiayou Xue,Xuke Yang,Xiaoqing Bao,Liuchong Fu,Sen Li,Menglin Huang,Jun Wang,Haisheng Song,Shiyou Chen,Chao Chen,Kanghua Li,Jiang Tang
Cadmium selenide (CdSe) solar cells have proven to be a remarkable potential top cell for a silicon-based tandem application. However, the defects and short carrier lifetimes of CdSe thin films greatly limit the solar cell performance. In this work, a Te-doped strategy is proposed to passivate the Se vacancy defects and increase the carrier lifetime of the CdSe thin film. The theoretical calculation helps to reveal the mechanism of nonradiative recombination of the CdSe thin film in depth. After Te-doping, the calculated capture coefficient of CdSe can be reduced from 4.61 × 10–8 cm3 s–1 to 2.32 × 10–9 cm3 s–1. Meanwhile, the carrier lifetime of CdSe thin film is increased nearly 3-fold from 0.53 to 1.43 ns. Finally, the efficiency of the Cd(Se,Te) solar cell is improved to 4.11%, about a relative 36.5% improvement compared to the pure CdSe solar cell. Both theoretical calculations and experiments prove that Te can effectively passivate bulk defects and improve the carrier lifetime of CdSe thin films, deserving further exploration to improve solar cell performance.
研究领域:
材料科学
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光伏技术
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DOI
PubMed
高影响因子
Advanced Optical Materials
·
2021
·Vol. 9
·期 19
·2100804
·
IF 9.926
Zhilin Li,Zhihui Rao,Qiaoqiao Li,Liujiang Zhou,Xiujian Zhao,Xiao Gong
Recently, lead-free materials with stable photoluminescence (PL) at room temperature, such as vacancy-ordered double perovskites have drawn wide attention. Herein, Te 4+ -doped all-inorganic lead-free Cs 2 Zr 1− x Te x Cl 6 perovskite microcrystals (MCs) are reported. The obtained pure Cs 2 ZrCl 6 perovskite MCs exhibit a blue emission, while Cs 2 Zr 1− x Te x Cl 6 perovskite MCs show a broad and strong yellow emission with ultrahigh photoluminescence quantum yield (PLQY) up to 79.46% at room temperature. The structure and optical properties of perovskite MCs are investigated in detail by experiments and theoretical calculations. The mechanism that 3 P 1 of Te can be partially frozen at the low temperature regarding Cs 2 Zr 1− x Te x Cl 6 perovskite MCs is proposed. White light emitting diodes (WLEDs) with a color coordinate of (0.344, 0.333), a correlated color temperature of 4959 K, a color rendering index (Ra) of 74.8, and a high light efficiency of 91.16 lm W −1 , are fabricated by the prepared Cs 2 Zr 1− x Te x Cl 6 perovskite MCs powder with a commercial near-UV LED (NUV-LED) chip (450 nm). The results suggest that Te 4+ -doped all-inorganic lead-free perovskite MCs show great potential in the next-generation solid-state lightings.
研究领域:
材料科学
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光学
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DOI
高影响因子
JOURNAL OF CATALYSIS
·
2020
·
IF 7.888
Yaping Pan,Fawei Zheng,Xixi Wang,Hongye Qin,Enzuo Liu,Junwei Sha,Naiqin Zhao,Ping Zhang,Liying Ma
Hydrogen evolution reaction (HER) activities of WS 2 can be improved by doping exotic atom to increase active sites on base plane and narrow the bandgap. However, most of these catalysts of exotic atom doped WS 2 are composed of semiconductor and the electronegativity between atoms is similar, which do harm to tuning bandgap with a wide range and decreasing the value of free Gibbs energy (Δ G H ) for hydrogen adsorption. Given that Te can tune bandgap with a wide range and the electronegativity between S and Te differ greatly, a vertically arranged WS 2 nanoelectrode is prepared by doping Te on WS 2 . According to experimental studies and the density functional theory calculations (DFT), the bandgap of WS 2 nanosheets is successfully narrowed after doping Te. This lowers the Schottky barrier which benefits the transfer of charges and improves electrocatalytic performance in turn. Meanwhile, the presence of Te atoms with much lower electronegativity than S increases the electron density of the adjacent region, thereby the S edges of basal plane around Te atoms and hollow sites of WS 2 nanosheet become active to drive HER, which has been verified by the reduced Δ G H of S edges of basal plane from 2.27 to 2.08 eV and hollow sites from 2.28 to 1.85 eV after the doping in DFT. Te-doped WS 2 nanosheets used as excellent HER catalysts with an overpotential of 213 mV to drive a current density of 10 mA/cm 2 , a small Tafel slope of 94 mV/dec, along with a superior stability in acid media.
研究领域:
材料科学
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电化学
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产品关联
DOI
高影响因子
JOURNAL OF NON-CRYSTALLINE SOLIDS
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2025
·
IF 3.5
Yuxin Shao,Chengwei Gao,Yanqing Fu,Shiliang Kang,Linling Tan,Baoan Song,Shixun Dai,Changgui Lin
Superionic β -Ag 2 S demonstrates exceptional ionic conductivity and ductility, rendering highly promising for applications in electrochemical sensors, thermoelectric devices and solid-state electrolytes. However, it is still haunted by the limited thermodynamic stability, transitioning to the poorly conductive α -Ag 2 S phase upon cooling to room temperature (RT). Herein, a solid solution formed by partial isovalent substitution of sulfur with tellurium stabilizes the superionic phase via the substantial atomic-size mismatch between S and Te. Specifically, Ag 2 S 1-x Te x (0.2 ≤ x ≤ 0.8) maintain superionic phase at RT without observable phase transition upon cooling. This stabilized superionic phase originates from the substantial size mismatched between S and Te. Furthermore, the anion disorder caused by the local volume expansion introduced by large-radius Te reduces the activation energy the activation energy barrier and provides more vacancies for Ag + ion transportation. This work confirms the efficiency of crystal amorphization strategy for stabilizing high-temperature superionic phases at ambient conditions, enabling the development of superionic conductors.
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高影响因子
ACS Omega
·
2022
·
IF 4.132
Zhenyao Liang,Liang Ni,Yang Zhang,Chen Yuan,Le Huang,Yibin Yang,Ye Xiao
The effects of elemental tellurium doping and decorating on the photoluminescence quantum yield (PL QY) and the environmental stability of the CsPbBr3 quantum dots (QDs) have been systematically studied. The PL spectra blue-shifts from 520 to 464 nm gradually with the increase in the amount of Te, and the full width at half-maximum (FWHM) increases from 20 to 62 nm and decreases to 27 nm accordingly. The morphology of the untreated samples has a rectangular shape with distinct boundaries, whereas the Te-doped samples have a semi-core–shell structure with partially coated CsPb2Br5 after tellurium doping. Furthermore, the apparent size of the nanocomposites increases to 20 nm, but the crystal size of the core decreases slightly according to the broadened peaks of X-ray diffraction (XRD). Further investigation by X-ray photoelectron spectroscopy shows that the binding energy of Pb–Br increases and Pb–Te bonds are formed in Te-doped samples, which can enhance the stability of QDs from the view of strengthening the chemical bonds and inhibiting the detaching behavior of bromine under moisture. At the nominal content of Pb/Te = 1:0.4, the thermal decomposition temperature of the QDs increases from 300 to 500 °C; the maximum of PL QY increases to 70% for the 1:0.4 sample and the relative PL peak intensity maintains 50% of the initial value after a 60 h aging simulation. Finally, the nanocomposite materials are fabricated into a white light-emitting device (WLED). Under the illumination of a commercial GaN chip, the device shows a good Commission Internationale de lEclairage (CIE) color coordination of (0.3291,0.3318).
研究领域:
材料科学
·
光学
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DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Jia Song,Yunfei Ma,Qitao Zhang,Chaohua Zhang,Xuelian Wu
The photocatalytic oxygen evolution of bismuth oxybromide (BiOBr) is greatly hindered by its low visible-light response and high electron–hole recombination. Nonmetal doping can effectively alleviate these issues, leading to improvement in photocatalytic performance. Herein, Bi2Te3 was introduced as both the Te doping source and the morphology-control template to improve the photocatalytic performance of BiOBr. Appropriate amounts of Te are critical to maintain the ultrathin plate-like structure of BiOBr, whereas excessive Te results in the formation of a flower-like architecture. Oxygen evolution activity disclosed that a plate-like structure is essential for realizing higher performance owing to sufficient light utilization and efficient charge separation. An optimal oxygen evolution rate of 368.0 μmol h–1 g–1 was achieved for the Te-doped sample, which is 2.3-fold as that of the undoped BiOBr (158.9 μmol h–1 g–1). Theoretical calculations demonstrated that Te doping can induce impurity levels above the valence band of BiOBr, which slightly narrowed the band gap and strengthened the light absorption in the range of 400–800 nm. More importantly, Te dopants could act as shallow traps for confining the excited electrons, thus prolonging the carrier lifetime. This work provides a novel strategy to prepare highly efficient photocatalysts by simultaneously realizing morphology manipulation and nonmetal doping.
研究领域:
材料科学
·
化学
·
光催化
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纳米技术
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DOI
PubMed
高影响因子
Crystals
·
2017
·Vol. 7
·期 9
·257
·
IF 1.566
Rui Liu,Xing Tan,Guangkun Ren,Yaochun Liu,Zhifang Zhou,Chan Liu,Yuanhua Lin,Cewen Nan
Polycrystalline Bi2Se3−xTex(x = 0~1.5) samples were prepared by self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) and their thermoelectric properties were investigated. The SHS-SPS process can shorten the time with few energy consumptions, and obtain almost pure Bi2Se3-based phases. Consequently, the Se vacancies and anti-site defects contribute to the converged carrier concentration of ~2 × 1019cm−3while the increased carrier effective mass enhances the Seebeck coefficient to more than −158 μV K−1over the entire temperature range. The lattice thermal conductivity is suppressed from 1.07 Wm−1K−1for the pristine specimen to ~0.6 Wm−1K−1for Te-substitution samples at 300 K because of point defects caused by the difference of mass and size between Te and Se atoms. Coupled with the enhanced power factor and reduced lattice thermal conductivity, a highZTof 0.67 can be obtained at 473 K for the Bi2Se1.5Te1.5sample. Our results reveal that Te-substitution based on the SHS-SPS method is highly-efficient and can improve the thermoelectric properties of Bi2Se3-based materials largely.
研究领域:
材料科学
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凝聚态物理
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无机非金属材料
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能源材料
·
热电转换
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）