Journal of Cleaner Production
·
2023
·
IF 11.1
Zhouyu Jiang,Yang Cong,Xiaoxuan Li,Jiale Xu,Mingliang Wang
The desmear of blind hole is a critical process in Printed Circuit Board (PCB) manufacturing. An environmental-friendly, non-destructive and efficient sodium bicarbonate abrasive jet desmearing method was proposed in this study. The desmearing process was to drive the abrasive particles into the blind hole by pressurized air, and realized the cleaning of drilling dirt through collision. By comparing the cleaning effect, the process parameters (jet pressure, jet time, jet angle and jet distance) of sodium bicarbonate abrasive jet desmearing method were optimized, and the optimal process parameters were determined as 0.3 MPa, 10 s, 90° and 1 cm. Under the optimal process conditions , by comparing with the permanganate swelling method that widely used in the industry, it was confirmed that the cleanliness of sodium bicarbonate abrasive jet desmearing method could reach the commercial cleaning level while ensuring no damage, and the improvement of surface roughness (Ra = 7.57220 μm) was also at the same level. Through the research on the abrasive recycling process, it was detected that the recovery rate of abrasive could reach 80.18% by a simple recrystallization operation, which could significantly reduce the cleaning cost. The trajectory of abrasive particle in the blind hole was simulated by the gas-solid coupling discrete phase model (DPM), and the vortex cutting erosion desmearing mechanism based on the analysis of velocity vector characteristics was proposed. Due to its advantages of high cleaning efficiency, low damage, less pollution and recyclability of abrasive, the sodium bicarbonate abrasive jet desmearing method was expected to be applied in PCB blind hole desmearing process in the future.
研究领域:
材料科学与工程
·
环境工程
·
电子制造技术
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2021
·
IF 4.527
Chen Zhou,Xiangyang Xu,Lei Dai,Haiming Gong,Shuntian Lin
Driven by electrostatic attraction, Ce 4+ ions or/and positively charged detonation nanodiamond (DND) particles can absorb onto negatively charged polystyrene (PS) spherical colloids. Three types of core-shell structured composite abrasives, PS@CeO 2 , PS@DND and PS@CeO 2 /DND, can thus be assembled. When PS@CeO 2 and PS@DND were used to polish sapphire wafer at pad rotating speed of 120–150 r/min and load pressure of ~3 kg, the material removing rate (MRR) exceeded 1.0 μm h −1 , 10–20 % higher than unitary abrasives. The surface profile roughness (Ra) for wafer polished by these two composite abrasives was respectively 1.25 and 0.63 nm, which is superior to CeO 2 (Ra = 1.38 nm) and DND (Ra = 1.29 nm). When using PS@CeO 2 /DND, the polishing interface area can be increased owing to the combined effect of elastic PS spheres and intensively coated CeO 2 and DND. Meanwhile, the synergistic mechanism of sapphire-CeO 2 chemical reaction and the strong mechanical abrasion of DND particles benefit the polishing efficiency. MRR for this ternary composite abrasive attained 1.4–1.7 μm h −1 while sapphire can be smoothed to a sub-nanoscale roughness.
研究领域:
材料科学
·
化学工程
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2018
·
IF 3.057
Jiali You,Tao Yang,Dandan Feng,Zhihong Li
Corundum abrasives with plate-like grains were fabricated by a two-step sintering technique using the solution-based process with the addition of the ternary compound additive Na 3 AlF 6 -CaO-SiO 2 . The two-step sintering method showed obvious advantages over conventional sintering methods in promoting sample densification, suppressing grain growth, and homogenizing the microstructure of the corundum abrasives. The sample doped with 2.5 wt% Na 3 AlF 6 and 4 wt% CaO + SiO 2 in the molar ratio of 1:1 possessed a relative density of 99.3%, average grain size of 0.54 µm, and single-particle compressive strength of 49 N. The introduction of seeds reduced the temperature of θ- to α-Al 2 O 3 phase transformation. The relationship between the microstructure and the mechanical properties of the abrasives was also discussed.
研究领域:
材料科学
·
陶瓷工程
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2024
·
IF 6.3
Xiaoxiao Zhu,Juxuan Ding,Zhangchao Mo,Xuesong Jiang,Jifei Sun,Hao Fu,Yuziyu Gui,Boyuan Ban,Ling Wang,Jian Chen
Chemical mechanical polishing (CMP) is currently the most widely used method for material removal and surface planarization of glass. An environmentally friendly method of improving polishing performance by using a mixed abrasive slurry of ceria and diamond was proposed in this study. The results of polishing experiments showed that compared with single ceria abrasive, the materials removal rate (MRR) of the mixed abrasive slurry increased from 82.7 nm/min to 109.6 nm/min, while the surface roughness (Ra) decreased from 26.4 nm to 0.6 nm after polishing. An amorphous reaction layer formed during the CMP process was observed directly using transmission electron microscopy. Thermodynamic analysis was conducted to investigate the interfacial chemical reactions during the polishing process. A model was proposed to describe the mechanism of the materials removal.
研究领域:
材料科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Polymer Materials
·
2021
·
IF 4.089
Jiancheng Wang,Han Sun,Zhiyao Yang,Yudong Wang,Xiaopeng Zhao,Jianbo Yin
Electrorheological (ER) polishing is an electric field-assisted polishing technology, but its application is limited by the insufficient performance of ER polishing fluids. This insufficient performance is mainly because the present ER polishing fluids are prepared by simply mixing abrasive particles into ER fluids, and the phase separation is easy to occur under simultaneous action of the electric field and shear field due to the difference in the ER effect between ER particles and abrasive particles. To solve this problem, we here reported a kind of composite ER polishing particles composed of poly(ionic liquid) (PIL) ER active particles covalently attached with commercial Al2O3 nanoabrasives. The composite particles could be facilely prepared by the polymerization of a Pickering emulsion with vinyl ionic liquid as the oil phase and silane-modified Al2O3 nanoparticle abrasives as the solid surfactant. Under simultaneous action of the electric field and shear field, the PIL/Al2O3 composite particles well overcome the phase separation problem of abrasive and ER active particles and exhibit a significantly better ER effect and polishing property compared to the simple mixture of the Al2O3 abrasive and PIL ER particles. This paper provides a way to solve the phase separation problem of traditional ER polishing fluids by integrating the ER effect and polishing property into a particle system.
研究领域:
材料科学
·
机械工程
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2021
·
IF 6.707
Wantang Wang,Baoguo Zhang,Yunhui Shi,Jiakai Zhou,Ru Wang,Nengyuan Zeng
Silicon carbide (SiC) is challenging to process by chemical mechanical polishing (CMP) given its anomaly mechanical hardness and chemically inert. However, improving the SiC-CMP performance including machining efficiency and surface quality is critical for developing power semiconductor devices with low cost, high efficiency, and high stability. Here, this research aims at combining mixed abrasive slurry (MAS) with photocatalytic effect in the SiC-CMP process, thus enabling an efficient enhanced CMP technology with low-cost and high-performance. Specifically, this paper describes the fabrication process of MAS through a high-energy ball milling method and discusses the polishing performance of the slurry with or without the presence of UV irradiation. By using MAS consisting of Al 2 O 3 and ZrO 2 abrasives, a material removal rate of 694 nm/h and surface roughness (Ra) of 0.489 nm can be obtained under UV irradiation. Additionally, the abrasive morphology, element composition, particle size distribution, Zeta potential, and its chemical effect of the MAS are also analyzed. In particular, a two-step strategy, namely the preparation of MAS and polishing with UV irradiation, is proposed to enhance the SiC-CMP efficiency, and an in-depth analysis of the improvement mechanism for each step is discussed.
研究领域:
材料科学
·
半导体技术
✓ 已验证
产品关联
DOI
高影响因子
OPTICS EXPRESS
·
2025
·Vol. 33
·期 3
·4252-4268
·
IF 3.3
Fukun Li,Fukun Li,Fukun Li,Fukun Li,Yang Bai,Yang Bai,Yang Bai,Yang Bai,HaiXiang Hu,HaiXiang Hu,HaiXiang Hu,HaiXiang Hu,Guanbo Qiao,Guanbo Qiao,Guanbo Qiao,Guanbo Qiao,Lingzhong Li,Lingzhong Li,Lingzhong Li,Lingzhong Li,Feng Zhang,Feng Zhang,Feng Zhang,Feng Zhang,Xuejun Zhang,Xuejun Zhang,Xuejun Zhang,Xuejun Zhang
To meet the stringent requirements for sub-nanometer surface roughness and full-spectrum spatial frequency error control in high-precision optical systems, this study systematically investigates the effects of varying Cerium oxide (CeO2) abrasive particle sizes and pitch pad hardness on the surface quality of fused silica glass during computer-controlled optical surfacing (CCOS). This study integrates experimental characterization with mathematical modeling to analyze the mechanisms by which abrasive particle size and polishing tool hardness influence material removal rates, contact pressure distribution, and surface roughness. The results indicate that smaller CeO2 particles effectively reduce high-spatial frequency roughness, making them suitable for precise micro-surface finishing, while larger particles exhibit higher material removal efficiency, making them more suitable for macro-surface machining. Hard pitch pads induce greater indentation depth and concentrated pressure, significantly improving mid-spatial frequency surface errors, while softer pitch pads are more suitable for overall surface smoothing. Experimental findings further validate the feasibility and effectiveness of the proposed optimization strategies in achieving ultra-precision processing at picometer scales across the full spectrum of frequency bands. This study provides a theoretical basis and practical guidance for selecting process parameters in the manufacturing of high-precision optical components.
研究领域:
光学工程
·
材料科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
APPLIED SURFACE SCIENCE
·
2025
·
IF 6.9
Hanqi Xu,Dexiang Li,Zhuojie Wang,Ping Song,Yujun Zhao,Hongjiu Su
To tackle the issue of the low mechanical effect of traditional abrasives in polishing silicon carbide wafers, we successfully prepared mullite-based composite abrasive particles with a dense structure and favorable mechanical properties through the deposition of polymeric hydroxy-aluminum on the silica particle surface and the adjustment of the aluminum-to-silicon ratio. In this study, a range of characterization techniques, including electron microscopy, nitrogen adsorption-desorption measurements, and X-ray diffractometer, were employed to thoroughly examine the micro-morphology, surface characteristics, and lattice structures of the calcined samples. By analyzing the microstructural evolution in the particles and the variation pattern of their polishing effect, it is evident that the amplified mechanical effect resulting from the increased hardness of the abrasive particles, as the aluminum-to-silica ratio rises, greatly heightens the polishing rate, but also exacerbates surface unevenness. We hereby deduced that the improvement in the mechanical action of the abrasives during polishing mainly stems from the strengthening action of grain boundaries and the synergistic effect of structural densification. Notably, the synthesized abrasives can achieve an average removal rate of 0.93 μm/h, while ensuring surface planarization (Ra = 0.28 nm). Our findings provide enlightening perspectives for the preparation and performance evaluation of mullite-based particles, guiding their development and application.
研究领域:
材料科学
·
表面工程
✓ 已验证
产品关联
DOI
高影响因子
WEAR
·
2025
·
IF 6.1
Guangen Zhao,Jianxiong Chen,Yongchao Xu,Cheng Peng,Qianting Wang
It is a great challenge to produce ultra-smooth surface of sapphire wafers at high material removal rate (MRR) using green slurry in semi-fixed abrasive polishing. A novel environmentally friendly polishing slurry was developed by preparing abrasives and complexing agents to improve surface quality and polishing efficiency. The SiO 2 and diamond/SiO 2 composite abrasives were successfully prepared by a simplified sol-gel strategy, exhibiting high purity, homogeneous particle size, and excellent dispersibility. Based on the semi-fixed polishing technology, the green polishing performance of sapphire wafers using different types of abrasives alone and in combination with complexing agents was investigated. The experimental results demonstrated that the novel slurry containing triisopropanolamine (TIPA) and diamond/SiO 2 composite abrasive had superior polishing performance. Compared with the traditional diamond slurry, the surface roughness of the novel slurry was reduced by 24.4 % to 6.2 nm (Ra), while the MRR was increased by 65.4 %. Through electrochemical experiments, molecular simulations, and infrared analysis, the improved polishing performance of the composite abrasives with TIPA may be attributed to the complexation of TIPA and the optimization of interfacial contact behavior. The analysis of wear debris and polished sapphire wafer surface further pointed out that the deformation reduced the indentation depth while enhancing the reactivity of the friction chemistry. The diamond/SiO 2 composite abrasives with TIPA slurry accelerated the generation and removal of the reaction layer consisting of AlOOH, Al-OH, and Al 2 Si 2 O 7 , realizing the optimal synergy between mechanical wear and tribochemistry, which significantly improved the polishing quality.
研究领域:
材料科学
·
表面工程
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale Advances
·
2023
·Vol. 6
·期 5
·1380-1391
·
IF 4.7
Yuanhang Fan,Zhenyu Zhang,Jiaxin Yu,Xingqiao Deng,Chunjing Shi,Hongxiu Zhou,Fanning Meng,Junyuan Feng
High-performance devices of quartz glass demand an atomic surface, which induces a challenge for chemical mechanical polishing (CMP) with a high material removal rate (MRR). Moreover, traditional CMP usually employs toxic and corrosive slurries, leading to the pollution of the environment. To overcome these challenges, a novel green photocatalytic CMP is proposed. In the CMP, SiO2@TiO2 core–shell abrasives were developed, and the CMP slurry included the developed abrasives, sodium carbonate, hydrogen peroxide and sorbitol. After photocatalytic CMP, the surface roughness Sa of quartz glass is 0.185 nm, with a scanning area of 50 × 50 μm2, and the MRR is 8.64 μm h−1. To the best of our knowledge, the MRR is the highest on such a big area of atomic surface for quartz glass. X-ray photoelectron spectroscopy reveals that SiO2@TiO2 core–shell abrasives were used as photocatalysts motivated by simulated solar light, generating electrons and holes and producing hydroxyl radicals through hydrogen peroxide. As a result, OH− could combine with Si atoms on the surface of quartz glass, forming Si–OH–Si bonds. Then the formed bonds were removed based on the balance between chemical and mechanical functions. The proposed CMP, developed SiO2@TiO2 abrasives and slurry provide new insights to achieve an atomic surface of quartz glass with a high MRR.
研究领域:
材料科学
·
环境科学
·
表面工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
MATERIALS CHEMISTRY AND PHYSICS
·
2019
·
IF 2.781
Hong Lei,Tingting Liu,Lei Xu
SiO 2 abrasive is one of the most effective abrasives used in chemical mechanical polishing (CMP) due to its uniform size, good dispersibility and good chemical reactivity. In this paper, a series of novel Sm-doped colloidal SiO 2 composite abrasives were synthesized by seed-induced growth method. The composite abrasives were characterized by using scanning electron microscopy, time-of-flight secondary ion mass spectrometry analysis (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS). The structure of the composite abrasive is core-shell type with silica as a core and a coated growth layer (including SiO 2 , Sm 2 Si 2 O 7 and Sm(OH) 3 as shell via chemical bonds and hydrogen bonds . The CMP properties of the composite abrasives on sapphire substrates were further studied and the results show that the Sm-doped colloidal SiO 2 composite abrasives give lower polished surface roughness (Ra) and higher MRR than that of the pure colloidal SiO 2 abrasive under the same polishing conditions. By TOF-SIMS and XPS analyses on the polished slurries, the acting mechanisms of Sm-doped colloidal SiO 2 composite abrasives on sapphire were explored also.
研究领域:
材料科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS CHEMISTRY AND PHYSICS
·
2025
·
IF 4.7
Jiale Zhang,Xiaohu Qu,Jianhang Yin,Ning Wang
With the development of advanced electronic packaging, a big challenge for the chemical mechanical polishing (CMP) is to achieve the global planarization of EMC (epoxy molding compound)- Si -Cu materials with the normal ceramic abrasives. In this paper, the SiO 2 @CeO 2 core-shell composite abrasive is developed for the CMP of EMC/Si/Cu materials for the first time, and a global planarization with low removal selectivity is expected owing to the synergistic effect of the core-shell abrasives. Two sol-gel synthetic strategies, i.e., oil bath and ultrasonication, are proposed for the controllable synthesis of the SiO 2 @CeO 2 abrasives, which exhibit a good dispersive stability with a large absolute zeta potential >30 mV. The slurry for the CMP of EMC-Si-Cu based on the SiO 2 @CeO 2 abrasives shows the advantage in controlling the surface roughness, material removal rate and the removal selectivity. Especially, the ultrasonic SiO 2 @CeO 2 abrasives give rise to the low surface roughness (Cu 2 nm, Si 0.3 nm, EMC 10 nm) and the low removal selectivity (Cu/EMC/Si = 1.58:1.56:1.00). Therefore, the proposed SiO 2 @CeO 2 core-shell abrasives and the developed CMP slurry opens an alternative way for the planarization of EMC/Si/Cu materials in the advanced electronic packaging.
研究领域:
材料科学
·
电子封装技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）