RSC Advances
·
2022
·Vol. 12
·期 5
·2729-2735
·
IF 4.036
Jie Zhang,Jiaojiao Liu
In this study, CsPbBr3 particles were prepared by a simple solvent evaporation method in ambient environment; the p–n heterojunction formed by CsPbBr3 particles on the surface of a single long Te wire was used to construct a high-performance Te/CsPbBr3 photodetector. Compared with CsPbBr3 PDs, the Te/CsPbBr3 photodetector showed improved photocurrent, and exhibited characteristics of excellent self-powered performance, broad-spectrum response (UV-visible), and ultra-fast response speed (trise = 0.09 ms). In addition, under zero bias and upon 540 nm light irradiation, the device had good responsivity (0.35 mA W−1), high photosensitivity (up to 100 on/off ratio), and a detectivity of 1.42 × 1010 Jones. This study provides insight into the possibility of manufacturing high-performance self-powered photodetectors through a simple in situ construction of heterojunctions.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
PubMed
高影响因子
Crystals
·
2024
·Vol. 14
·期 1
·79
·
IF 2.4
Xing Gao,Xin Song,Shan Zhang,Xinxiang Yang,Pei Han,Liwen Zhang,Chunxiao Lu,Xihong Hao,Yong Li
Self-powered photodetectors have the advantages of high sensitivity, sustainability, and small size and have become a research hotspot in advanced optoelectronic systems. However, the low output photocurrent density seriously hinders the practical application of ferroelectric self-powered photodetectors. Herein, the high-efficiency photoelectric detection performance of the Bi1-xHoxFeO3ferroelectric self-powered photodetector is realized by doping Ho. The responsivity (R) and detectivity (D*) can reach 0.0159 A/W and 1.94 × 1011Jones under monochromatic light with a wavelength of 900 nm. Meanwhile, the R andD*can reach 0.022 A/W and 2.65 × 1011Jones under sunlight. These excellent photodetection performances are attributed to the high short-circuit current density (Jsc). When the Ho content is 6%, the output photocurrent reaches up to 0.81 mA/cm2. The systematic structure and photo-electric characteristic analysis suggest that the decrease in the band gap leads to the generation of a larger photocurrent while the ferroelectric polarization is reduced slightly. This work provides a new way to obtain high-performance self-powered photodetectors.
研究领域:
材料科学
·
光学工程
✓ 已验证
产品关联
DOI
高影响因子
Small
·
2025
·
IF 12.1
Wei Wu,Wen He,Duoduo Ling,Lei Chen,Yinze Zhang,Xiangqian Fan,Yanghao Bi,Dongbo Wang,Jinzhong Wang
Self-powered broadband photodetectors (SPBDs) have received widespread attention due to their significant applications in optical communication, remote sensing, and imaging. Vertical heterojunctions are promising for SPBDs due to their efficient photogenerated carrier separation and high integration density. However, certain band alignments at the interface can drive carriers to recombine that undermines the former advantage. Here, a SPBD based on the Bi 2 Te 3 /Sb 2 O 3 /p-Si vertical heterojunction is developed that introduces the Sb 2 O 3 as a carrier blocking layer and achieves improved self-powered photoresponse than Bi 2 Te 3 /p-Si. A one-step electron beam evaporation approach is adopted to deposit a narrow-bandgap optical-active layer Bi 2 Te 3 and a blocking layer Sb 2 O 3 on p-type Si substrates. Such photodetector exhibits detection performance across a broad response band of UV–vis–NIR (254–1050 nm). Owing to the built-in electric field within the heterojunction, the blocking effect and the photovoltaic effect induced by the Sb 2 O 3 layer, the detector achieves high responsivity (316.5 mA·W −1 ), detectivity (6.19 × 10 11 Jones) and fast rise and decay times (24.6/25.1 ms). Furthermore, the device exhibits excellent imaging capabilities for UV, visible, and near-infrared light patterns. The work presents a SPBD using Bi 2 Te 3 -based vertical heterostructure and proposes a novel and instructive performance-enhancing approach using a metal oxide layer based on carrier blocking layer engineering.
研究领域:
材料科学
·
光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2021
·Vol. 9
·期 43
·15654-15661
·
IF 7.393
Yong Zhang,Weilin Liu,Yushen Liu,Conghuan Wang,Guodong Zhu,Weidong Song
The anisotropic electrical properties of organic semiconductors are one of the research hotspots currently. However, there is a great challenge to construct optoelectronic devices by using anisotropic properties of organic semiconductors. Here, we developed anisotropic self-powered photodetectors based on organic polymer semiconducting DPP-DTT and SrTiO3 (DPT/STO) heterojunctions. Two PDs were fabricated where anisotropic DPP-DTT layers were written directly on SrTiO3 with parallel and perpendicular configurations (‖DPT/STO and ⊥DPT/STO). It is found that both devices exhibit anisotropic self-powered characteristics under 400 nm light illumination at zero bias; however, the ‖DPT/STO device shows larger open-circuit voltage (0.71 V) and higher photocurrent (1.0 nA) than the ⊥DPT/STO device (0.26 V and 0.4 nA). Moreover, the anisotropic self-powered feature is also verified on the DPT/GaN devices. The observed phenomenon can be attributed to the anisotropic electrical performance of the directly written DPP-DTT organic polymer. Our work provides a promising way to fabricate anisotropic self-powered devices by employing anisotropic organic semiconductors for broad applications.
研究领域:
材料科学
·
光电材料与器件
·
半导体物理
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2018
·Vol. 6
·期 21
·1800639
·
IF 7.43
Lufan Jin,Yating Zhang,Yu Yu,Zhiliang Chen,Yifan Li,Mingxuan Cao,Yongli Che,Jianquan Yao
Colloidal wurtzite-structure CdSe/ZnS quantum dots (CWQDs), with noncentral asymmetry structure and spontaneous polarization, have an extensive potential for applications based on the pyroelectric effect, such as energy harvestors, self-powered nanogenerators, and photosensors. Here, a low-cost, easy-fabrication, and high-speed self-powered photodetector is demonstrated, which performs independently without any external power source. The response of the device caused by the photoinduced-pyroelectric effect is experimentally investigated based on the Au/CWQDs/Au edge-electrodes structure, which exhibits an ultrafast photoresponse with a rising time of 20.6 µs and a falling time of 30.1 µs. Moreover, the frequency and temperature dependence of the device also is investigated under zero bias. This work provides a new approach to achieve self-powered photodetectors, which may show promise for extensive batch applications, such as wireless sensing, optothermal detection, optoelectronic communication, and energy harvesting.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2020
·
IF 7.489
Miaomiao Yu,Feng Gao,Yunxia Hu,Lifeng Wang,PingAn Hu,Wei Feng
Multilayer indium selenide (InSe) is a good candidate for high performance electronic and optoelectronic devices. The electrical performance of InSe is effectively regulated by dielectric layers, contact electrodes and surface doping. However, as a powerful tool to tune properties of materials, alloy engineering is absent for multilayer InSe. In this letter, for the first time, we investigate the electrical property of InSe 1-x Te x alloys and optoelectronic property of InSe-InSe 0.82 Te 0.18 p-n heterojunction. The electrical transport properties of InSe 1-x Te x alloys strongly depend on the content of Te composition. With the ratio of Te/Se increasing, the n -type electron transport behavior of InSe gradually transfers to the p-type hole transport behavior of InSe 0.82 Te 0.18 . The p-n InSe-InSe 0.82 Te 0.18 heterojunction shows a rectification effect and a self-powered photodetection. The self-powered photodetector (SPPD) has a broad photodetection range from visible light (400 nm) to near-infrared (NIR) light (1000 nm). The responsivity ( R ) of SPPD is 14.1 mA/W under illuminated by NIR light (900 nm) at zero bias, which is comparable to some of the 2D heterojunctions NIR photodetectors measured with an external bias. The SPPD also shows a stable and fast response to NIR light (900 nm). This work demonstrates that the electrical transport properties of InSe 1-x Te x alloys significantly rely on the ratio of Te/Se and suggests that InSe-InSe 1-x Te x p-n heterojunction has a excellent potential for application in the self-powered optoelectronic device.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Electronic Materials
·
2023
·Vol. 9
·期 3
·2201222
·
IF 6.2
Kewen Tao,Chenwei Xiong,Jiachun Lin,Decai Ma,Shaopeng Lin,Biao Wang,Huashan Li
Self-powered halide perovskite X-ray detectors have evoked busting interests because they present outstanding properties such as low power consumption, high sensitivity, and integrability without external power source. Nevertheless, existing self-powered X-ray detectors exhibit low sensitivity due to the insufficient charge separation and transport. Herein, a self-powered photodetector for sensitive X-ray and photodetection based on single-crystalline perovskite FAPbBr 3 /NiO x heterostructure is demonstrated. The built-in field of FAPbBr 3 /NiO x heterojunction provides a driving force for separation and transport of photoexcited carriers. Without an external power supply, the photodetector presents excellent photoresponse performance under 450 nm light illumination, including high photoresponsivity (123.6 mA W −1 ), good detectivity ( D = 7.1 × 10 11 Jones), and ultrafast response/recovery time (10/200 ns). Simultaneously, the device achieves photovoltaic effect of 0.80 V and a large mobility–lifetime product of 1.1 × 10 −3 cm 2 V −1 , which enable a superior X-ray sensitivity of 402 µC Gy air −1 cm −2 at zero bias voltage. These results imply that the simple combination of perovskite single crystal and a hole transporting layer provides a flexible platform for the realization of energy-saving self-powered photodetector in visible light and X-rays.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2023
·
IF 5.2
Yixing Cai,Yangyang Zhang,Shuaibing Gao,Jian Chen,Meilin Wan,Yongming Hu,Yunbin He,Qingfeng Zhang
Currently semiconductor-based near ultraviolet and ultraviolet self-powered photodetectors usually display low detectivity and responsivity due to weak photogenerated electron and hole separation ability and not suitable electrode. BaTiO 3 possesses a high depolarization electric field throughout the bulk and wide band gap (> 3 eV), and hence is a good candidate for fabricating near-ultraviolet and ultraviolet self-powered photodetectors. Cu nanowires (NWs) have been regarded as promising transparent electrode for photodetectors because they have not only equivalent optical transparency and electrical conductivity relative to Ag NWs currently in use, but also far lower cost. But, weak resistance to oxidation in the environment of light and electricity prevents large-scale use of Cu NWs in photodetectors. Herein, an organic corrosion inhibitor , benzotriazole (BTA), is used to passivate Cu NWs, and interestingly, the passivated NW networks exhibit significantly increased resistance to oxidation. At zero field, the BaTiO 3 photodetector coated with Cu@BTA NWs exhibits stable photocurrent, high responsibility of 6.45 × 10 −7 A/W, large detectivity of 1.97 × 10 8 Jones, and fast response rate (rise and decay time being 28.8 ms and 37.2 ms, respectively) at the wavelength of 405 nm, which is far better than indium-tin-oxide electrode-coated BaTiO 3 photodetector. This work provides a strong guideline for large-scale fabrication of low-cost and high-stability transparent electrodes applicable in near-ultraviolet and ultraviolet photoelectric devices.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
高影响因子
CRYSTENGCOMM
·
2016
·Vol. 18
·期 23
·4405-4411
·
IF 3.849
Jie Ding,Huajing Fang,Zhipeng Lian,Jiangwei Li,Qianrui Lv,Liduo Wang,Jia-Lin Sun,Qingfeng Yan
Methylammonium lead iodide perovskite (MAPbI3) has made a re-entry into the literature nowadays for its extraordinary characteristics, such as high absorption of light, long carrier diffusion length, high carrier mobility, low trap-state density, low surface recombination velocity and ease of attainment. Here, we report a self-powered photodetector based on a CH3NH3PbI3 single crystal by employing asymmetric Au–Al electrodes. The key issue of this photodetector was the metal–semiconductor contacts, owing to the Schottky junction between them. By setting the channel length between the Au–Al electrodes to 30 μm for sufficient electron–hole pair separation and transportation, the device showed good performance under 1 sun illumination. The short-circuit photocurrent density and open-circuit voltage were 6.86 mA cm−2 and 0.7 V, respectively. The photocurrent was almost 2 orders of magnitude larger than that based on a perovskite polycrystalline film with a similar device structure. More importantly, the device could detect the lowest noticeable incident power density down to 1 × 10−8 W cm−2. Under this weak light intensity, the responsivity was as high as 0.24 A W−1 without any bias. The photoresponse also had a broadband ranging from 375 nm to 808 nm accompanied by a fast response speed.
研究领域:
材料科学
·
光电技术
✓ 已验证
DOI
高影响因子
ACS Applied Nano Materials
·
2025
·
IF 5.5
Zejiang Gao,Li Chen,Shaohong Li,Xingyu Pan,Yu Liu,Ge Gao,Bingsuo Zou
Metal halide perovskites have emerged as promising functional materials for high-performance photodetectors owing to their exceptional properties, including high-absorption coefficient, low-exciton binding energy, and near-unity photoluminescence quantum yields. However, their practical applications in photodetection remain constrained by intrinsic carrier recombination losses. Herein, we report the rational design of type-II CsPbBr3/ZnS heterostructured nanocrystals (NCs) through interfacial band engineering to address this challenge. Advanced characterization combining transmission electron microscopy, ultraviolet photoelectron spectroscopy, and density functional theory calculations confirms the formation of a staggered band alignment at the heterointerface. This unique electronic structure facilitates fast charge separation and inhibits carrier recombination compared to pristine CsPbBr3 NCs. Benefiting from the advantages of CsPbBr3/ZnS heterostructured NCs, we demonstrate a self-powered photodetector with excellent detection capability under 365 nm illumination: photosensitivity of 1.38 × 104, responsivity of 37.5 mA/W, and specific detectivity of 1.21 × 1012 Jones at zero bias. The interfacial engineering strategy presented in this work establishes a universal approach for developing high-efficiency perovskite optoelectronics with tailored charge transport dynamics.
研究领域:
材料科学
·
光电材料
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
·
2023
·Vol. 41
·期 1
·55-61
·
IF 1.9
Feng Hua,Xin Du,Zhenyu Huang,Yiting Gu,Jianfeng Wen,Fuchi Liu,Junxue Chen,Tao Tang
Self-powered photodetectors (SPPDs) are attracting considerable publicity due to their superiority over conventional photodetectors (PDs) in terms of high sensitivity, fast response, and no need for an external power supply. Halide perovskites are much anticipated in SPPDs for their unusual photoelectronic properties. This work developed a Schottky junction ${{\rm CsPbBr}_3}/{\rm n} \text{-} {\rm Si}$ SPPD by growing stable all-inorganic ${{\rm CsPbBr}_3}$ microcrystals on an n-Si substrate using a solution method. At zero bias, such Schottky SPPD has a very weak dark current (0.3 pA), a wide linear dynamic range (LDR, 110 dB), a sizeable on–off ratio (${\gt}{{10}^3}$), and high detectivity (${1.05} \times {{10}^{11}}\;{\rm Jones}$). Through the research of this project, it is expected to obtain a way to prepare Schottky photodiodes with high stability and self-driving capability.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
EcoMat
·
2024
·Vol. 6
·期 7
·e12472
·
IF 10.7
Xin Song,Siwen Liu,Lizhi Ren,Yunxian Zuo,Shimin Wang,Erjing Wang,Jin Qian,Tao Ye,Kai Wang,Congcong Wu
In the rapidly advancing field of information technology, passive sensors with the exemption of external power input can serve as intelligent instruments for end-node data acquisition. 3D perovskites have been recognized as a superior optoelectronic material but suffering from notorious instability due to their “soft lattice” nature. Replacing by their 2D counterparts in these photo-sensing applications can boost the reliability level. However, traditional fabrication for 2D perovskite relay on wet chemistry methods, exhibiting complication, and inefficiency in making high-quality films for device integration. This study unveils a new solid–solid conversion routing toward a direct transformation from 3D orientated films into 2D highly crystalline configuration, based on a spontaneous lattice regulation mechanism through an amine steam treatment. The resultant 2D film exhibits greater orientational micromorphology and a distinct monochromatic narrowband light sensing behavior after integration into a self-powered photodetector. This method on perovskite conversion bears the promise of advanced future-manufacturing for high-performance photonic sensing.
研究领域:
材料科学
·
光电技术
·
纳米科技
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）